TWI562386B - Resistance change device and manufacturing method of resistance change device - Google Patents

Resistance change device and manufacturing method of resistance change device

Info

Publication number
TWI562386B
TWI562386B TW101120744A TW101120744A TWI562386B TW I562386 B TWI562386 B TW I562386B TW 101120744 A TW101120744 A TW 101120744A TW 101120744 A TW101120744 A TW 101120744A TW I562386 B TWI562386 B TW I562386B
Authority
TW
Taiwan
Prior art keywords
resistance change
change device
manufacturing
resistance
change
Prior art date
Application number
TW101120744A
Other languages
English (en)
Other versions
TW201310659A (zh
Inventor
Yutaka Nishioka
Kazumasa Horita
Natsuki Fukuda
Shin Kikuchi
Koukou Suu
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of TW201310659A publication Critical patent/TW201310659A/zh
Application granted granted Critical
Publication of TWI562386B publication Critical patent/TWI562386B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5614—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using conductive bridging RAM [CBRAM] or programming metallization cells [PMC]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/023—Formation of switching materials, e.g. deposition of layers by chemical vapor deposition, e.g. MOCVD, ALD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8416—Electrodes adapted for supplying ionic species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/15—Current-voltage curve
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/56—Structure including two electrodes, a memory active layer and a so called passive or source or reservoir layer which is NOT an electrode, wherein the passive or source or reservoir layer is a source of ions which migrate afterwards in the memory active layer to be only trapped there, to form conductive filaments there or to react with the material of the memory active layer in redox way

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
TW101120744A 2011-06-10 2012-06-08 Resistance change device and manufacturing method of resistance change device TWI562386B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011130011 2011-06-10

Publications (2)

Publication Number Publication Date
TW201310659A TW201310659A (zh) 2013-03-01
TWI562386B true TWI562386B (en) 2016-12-11

Family

ID=47295778

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101120744A TWI562386B (en) 2011-06-10 2012-06-08 Resistance change device and manufacturing method of resistance change device

Country Status (6)

Country Link
US (1) US9281477B2 (zh)
JP (1) JP5648126B2 (zh)
KR (1) KR101528094B1 (zh)
CN (1) CN103597597B (zh)
TW (1) TWI562386B (zh)
WO (1) WO2012169195A1 (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9343207B2 (en) 2012-09-05 2016-05-17 Ulvac, Inc. Resistance change device, and method for producing same
US9059391B2 (en) * 2012-12-10 2015-06-16 Winbond Electronics Corp. Self-rectifying RRAM cell structure and 3D crossbar array architecture thereof
JP6230090B2 (ja) * 2013-01-28 2017-11-15 国立研究開発法人物質・材料研究機構 多機能電気伝導素子
TWI556245B (zh) 2015-02-16 2016-11-01 國立中山大學 電阻式記憶體
US9741930B2 (en) * 2015-03-27 2017-08-22 Intel Corporation Materials and components in phase change memory devices
JP2018006696A (ja) * 2016-07-08 2018-01-11 東芝メモリ株式会社 記憶装置
CN109643660B (zh) * 2016-08-31 2024-03-05 株式会社Flosfia p-型氧化物半导体及其制造方法
CN111341909A (zh) * 2020-02-07 2020-06-26 中国科学院微电子研究所 一种存储器件及其制作方法、存储器及电子设备

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006075574A1 (ja) * 2005-01-14 2006-07-20 Matsushita Electric Industrial Co., Ltd. 抵抗変化素子とその製造方法
CN101064359A (zh) * 2006-04-28 2007-10-31 三星电子株式会社 包括可变电阻材料的非易失存储器件
WO2007138646A1 (ja) * 2006-05-25 2007-12-06 Hitachi, Ltd. 不揮発性メモリ素子およびその製造方法ならびに不揮発性メモリ素子を用いた半導体装置
WO2008149484A1 (ja) * 2007-06-05 2008-12-11 Panasonic Corporation 不揮発性記憶素子およびその製造方法、並びにその不揮発性記憶素子を用いた不揮発性半導体装置
US20100190313A1 (en) * 2008-05-08 2010-07-29 Yoshio Kawashima Method for manufacturing nonvolatile storage element and method for manufacturing nonvolatile storage device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101054321B1 (ko) 2007-03-01 2011-08-05 후지쯔 가부시끼가이샤 반도체 장치 및 그 제조 방법
US8173989B2 (en) * 2007-05-30 2012-05-08 Samsung Electronics Co., Ltd. Resistive random access memory device and methods of manufacturing and operating the same
WO2010067585A1 (ja) * 2008-12-10 2010-06-17 パナソニック株式会社 抵抗変化素子およびそれを用いた不揮発性半導体記憶装置
WO2010073897A1 (ja) 2008-12-26 2010-07-01 日本電気株式会社 抵抗変化素子
JP4792097B2 (ja) * 2009-03-25 2011-10-12 株式会社東芝 不揮発性記憶装置及びその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006075574A1 (ja) * 2005-01-14 2006-07-20 Matsushita Electric Industrial Co., Ltd. 抵抗変化素子とその製造方法
CN101064359A (zh) * 2006-04-28 2007-10-31 三星电子株式会社 包括可变电阻材料的非易失存储器件
WO2007138646A1 (ja) * 2006-05-25 2007-12-06 Hitachi, Ltd. 不揮発性メモリ素子およびその製造方法ならびに不揮発性メモリ素子を用いた半導体装置
WO2008149484A1 (ja) * 2007-06-05 2008-12-11 Panasonic Corporation 不揮発性記憶素子およびその製造方法、並びにその不揮発性記憶素子を用いた不揮発性半導体装置
US20100190313A1 (en) * 2008-05-08 2010-07-29 Yoshio Kawashima Method for manufacturing nonvolatile storage element and method for manufacturing nonvolatile storage device

Also Published As

Publication number Publication date
KR101528094B1 (ko) 2015-06-10
CN103597597A (zh) 2014-02-19
JPWO2012169195A1 (ja) 2015-02-23
US9281477B2 (en) 2016-03-08
KR20140014274A (ko) 2014-02-05
US20140166966A1 (en) 2014-06-19
TW201310659A (zh) 2013-03-01
WO2012169195A1 (ja) 2012-12-13
JP5648126B2 (ja) 2015-01-07
CN103597597B (zh) 2016-09-14

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