TWI561931B - Chemically-amplified positive resist composition and resist patterning process using the same - Google Patents
Chemically-amplified positive resist composition and resist patterning process using the sameInfo
- Publication number
- TWI561931B TWI561931B TW104106950A TW104106950A TWI561931B TW I561931 B TWI561931 B TW I561931B TW 104106950 A TW104106950 A TW 104106950A TW 104106950 A TW104106950 A TW 104106950A TW I561931 B TWI561931 B TW I561931B
- Authority
- TW
- Taiwan
- Prior art keywords
- chemically
- same
- patterning process
- amplified positive
- resist
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C61/00—Compounds having carboxyl groups bound to carbon atoms of rings other than six-membered aromatic rings
- C07C61/12—Saturated polycyclic compounds
- C07C61/125—Saturated polycyclic compounds having a carboxyl group bound to a condensed ring system
- C07C61/135—Saturated polycyclic compounds having a carboxyl group bound to a condensed ring system having three rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C61/00—Compounds having carboxyl groups bound to carbon atoms of rings other than six-membered aromatic rings
- C07C61/15—Saturated compounds containing halogen
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C61/00—Compounds having carboxyl groups bound to carbon atoms of rings other than six-membered aromatic rings
- C07C61/16—Unsaturated compounds
- C07C61/26—Unsaturated compounds having a carboxyl group bound to a seven-to-twelve-membered ring
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C61/00—Compounds having carboxyl groups bound to carbon atoms of rings other than six-membered aromatic rings
- C07C61/16—Unsaturated compounds
- C07C61/28—Unsaturated compounds polycyclic
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C61/00—Compounds having carboxyl groups bound to carbon atoms of rings other than six-membered aromatic rings
- C07C61/16—Unsaturated compounds
- C07C61/39—Unsaturated compounds containing six-membered aromatic rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C61/00—Compounds having carboxyl groups bound to carbon atoms of rings other than six-membered aromatic rings
- C07C61/16—Unsaturated compounds
- C07C61/40—Unsaturated compounds containing halogen
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C63/00—Compounds having carboxyl groups bound to a carbon atoms of six-membered aromatic rings
- C07C63/04—Monocyclic monocarboxylic acids
- C07C63/06—Benzoic acid
- C07C63/08—Salts thereof
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C63/00—Compounds having carboxyl groups bound to a carbon atoms of six-membered aromatic rings
- C07C63/68—Compounds having carboxyl groups bound to a carbon atoms of six-membered aromatic rings containing halogen
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
- C07C69/76—Esters of carboxylic acids having a carboxyl group bound to a carbon atom of a six-membered aromatic ring
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014044510A JP6062878B2 (ja) | 2014-03-07 | 2014-03-07 | 化学増幅型ポジ型レジスト組成物及びレジストパターン形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201539137A TW201539137A (zh) | 2015-10-16 |
TWI561931B true TWI561931B (en) | 2016-12-11 |
Family
ID=54017234
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW104106950A TWI561931B (en) | 2014-03-07 | 2015-03-05 | Chemically-amplified positive resist composition and resist patterning process using the same |
Country Status (4)
Country | Link |
---|---|
US (1) | US9500949B2 (zh) |
JP (1) | JP6062878B2 (zh) |
KR (1) | KR101742371B1 (zh) |
TW (1) | TWI561931B (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6059675B2 (ja) * | 2014-03-24 | 2017-01-11 | 信越化学工業株式会社 | 化学増幅型ネガ型レジスト組成物及びレジストパターン形成方法 |
JP6706530B2 (ja) * | 2016-03-31 | 2020-06-10 | 東京応化工業株式会社 | レジスト組成物及びレジストパターン形成方法 |
JP6631397B2 (ja) * | 2016-05-11 | 2020-01-15 | Jsr株式会社 | 感放射線性樹脂組成物、レジストパターン形成方法、酸拡散制御剤の製造方法及び感放射線性樹脂組成物の製造方法 |
US10416558B2 (en) * | 2016-08-05 | 2019-09-17 | Shin-Etsu Chemical Co., Ltd. | Positive resist composition, resist pattern forming process, and photomask blank |
TWI745445B (zh) * | 2016-10-05 | 2021-11-11 | 日商東京應化工業股份有限公司 | 光阻組成物及光阻圖型形成方法、高分子化合物,及共聚物 |
JP7363742B2 (ja) * | 2019-11-20 | 2023-10-18 | 信越化学工業株式会社 | オニウム塩化合物、化学増幅レジスト組成物及びパターン形成方法 |
JP6882703B2 (ja) * | 2019-11-27 | 2021-06-02 | Jsr株式会社 | 酸拡散制御剤及び化合物 |
JP7517106B2 (ja) * | 2019-12-11 | 2024-07-17 | 信越化学工業株式会社 | オニウム塩化合物、化学増幅レジスト組成物及びパターン形成方法 |
JP2021103236A (ja) * | 2019-12-25 | 2021-07-15 | 東京応化工業株式会社 | レジスト組成物及びレジストパターン形成方法 |
JP2022008152A (ja) * | 2020-06-25 | 2022-01-13 | 住友化学株式会社 | 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法 |
JP2022013736A (ja) * | 2020-07-01 | 2022-01-18 | 住友化学株式会社 | 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法 |
Citations (3)
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CN1832982A (zh) * | 2003-07-03 | 2006-09-13 | 道康宁公司 | 感光性倍半氧硅烷树脂 |
CN102321212A (zh) * | 2010-02-26 | 2012-01-18 | 信越化学工业株式会社 | 聚合物、化学放大正性抗蚀剂组合物和图案形成方法 |
US20130034813A1 (en) * | 2011-08-05 | 2013-02-07 | Shin-Etsu Chemical Co., Ltd. | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS |
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DE19533608A1 (de) * | 1995-09-11 | 1997-03-13 | Basf Ag | Positivarbeitendes strahlungsempfindliches Gemisch und Verfahren zur Herstellung von Reliefstrukturen |
JP3955384B2 (ja) | 1998-04-08 | 2007-08-08 | Azエレクトロニックマテリアルズ株式会社 | 化学増幅型レジスト組成物 |
JPH11327143A (ja) | 1998-05-13 | 1999-11-26 | Fujitsu Ltd | レジスト及びレジストパターンの形成方法 |
JP4231622B2 (ja) | 2000-01-27 | 2009-03-04 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
JP2002131898A (ja) * | 2000-10-26 | 2002-05-09 | Fuji Photo Film Co Ltd | ポジ型感放射線組成物 |
JP4025162B2 (ja) | 2002-09-25 | 2007-12-19 | 信越化学工業株式会社 | 高分子化合物及びポジ型レジスト材料並びにこれを用いたパターン形成方法 |
JP5083528B2 (ja) | 2006-09-28 | 2012-11-28 | 信越化学工業株式会社 | 新規光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法 |
KR101116963B1 (ko) | 2006-10-04 | 2012-03-14 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 고분자 화합물, 레지스트 재료, 및 패턴 형성 방법 |
JP4858714B2 (ja) | 2006-10-04 | 2012-01-18 | 信越化学工業株式会社 | 高分子化合物、レジスト材料、及びパターン形成方法 |
JP2009053518A (ja) | 2007-08-28 | 2009-03-12 | Fujifilm Corp | 電子線、x線またはeuv用レジスト組成物及び該レジスト組成物を用いたパターン形成方法 |
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JP5544098B2 (ja) | 2008-09-26 | 2014-07-09 | 富士フイルム株式会社 | 感活性光線性または感放射線性樹脂組成物、及び該感光性組成物を用いたパターン形成方法 |
US20100136477A1 (en) * | 2008-12-01 | 2010-06-03 | Ng Edward W | Photosensitive Composition |
JP5381905B2 (ja) | 2009-06-16 | 2014-01-08 | 信越化学工業株式会社 | 化学増幅ポジ型フォトレジスト材料及びレジストパターン形成方法 |
JP5580674B2 (ja) * | 2009-07-14 | 2014-08-27 | 住友化学株式会社 | 新規化合物、レジスト組成物及びパターン形成方法 |
JP5585123B2 (ja) * | 2010-02-26 | 2014-09-10 | セントラル硝子株式会社 | 含フッ素不飽和カルボン酸オニウム塩類 |
JP5401371B2 (ja) * | 2010-03-19 | 2014-01-29 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、並びに、該組成物を用いたレジスト膜及びパターン形成方法 |
TWI457318B (zh) | 2010-10-05 | 2014-10-21 | Shinetsu Chemical Co | 含氟酯單體及其製造方法、與含氟酯高分子化合物 |
JP5589019B2 (ja) * | 2011-06-14 | 2014-09-10 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、これを用いた感活性光線性又は感放射線性膜、及び、パターン形成方法 |
JP5793389B2 (ja) * | 2011-09-30 | 2015-10-14 | 富士フイルム株式会社 | パターン形成方法、及びこれを用いた電子デバイスの製造方法 |
JP5846889B2 (ja) * | 2011-12-14 | 2016-01-20 | 東京応化工業株式会社 | レジスト組成物、レジストパターン形成方法、化合物 |
JP5699943B2 (ja) * | 2012-01-13 | 2015-04-15 | 信越化学工業株式会社 | パターン形成方法及びレジスト材料 |
JP5904180B2 (ja) * | 2013-09-11 | 2016-04-13 | 信越化学工業株式会社 | スルホニウム塩、化学増幅型レジスト組成物、及びパターン形成方法 |
JP6059675B2 (ja) * | 2014-03-24 | 2017-01-11 | 信越化学工業株式会社 | 化学増幅型ネガ型レジスト組成物及びレジストパターン形成方法 |
JP6137046B2 (ja) * | 2014-05-09 | 2017-05-31 | 信越化学工業株式会社 | 単量体、高分子化合物、レジスト材料及びパターン形成方法 |
-
2014
- 2014-03-07 JP JP2014044510A patent/JP6062878B2/ja active Active
-
2015
- 2015-02-19 US US14/625,892 patent/US9500949B2/en active Active
- 2015-03-05 TW TW104106950A patent/TWI561931B/zh active
- 2015-03-06 KR KR1020150031675A patent/KR101742371B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1832982A (zh) * | 2003-07-03 | 2006-09-13 | 道康宁公司 | 感光性倍半氧硅烷树脂 |
CN102321212A (zh) * | 2010-02-26 | 2012-01-18 | 信越化学工业株式会社 | 聚合物、化学放大正性抗蚀剂组合物和图案形成方法 |
US20130034813A1 (en) * | 2011-08-05 | 2013-02-07 | Shin-Etsu Chemical Co., Ltd. | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS |
Also Published As
Publication number | Publication date |
---|---|
JP2015169790A (ja) | 2015-09-28 |
KR20150105251A (ko) | 2015-09-16 |
JP6062878B2 (ja) | 2017-01-18 |
US20150253664A1 (en) | 2015-09-10 |
KR101742371B1 (ko) | 2017-05-31 |
TW201539137A (zh) | 2015-10-16 |
US9500949B2 (en) | 2016-11-22 |
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