TWI561924B - Chemically-amplified negative resist composition and resist patterning process using the same - Google Patents

Chemically-amplified negative resist composition and resist patterning process using the same

Info

Publication number
TWI561924B
TWI561924B TW104109123A TW104109123A TWI561924B TW I561924 B TWI561924 B TW I561924B TW 104109123 A TW104109123 A TW 104109123A TW 104109123 A TW104109123 A TW 104109123A TW I561924 B TWI561924 B TW I561924B
Authority
TW
Taiwan
Prior art keywords
chemically
same
patterning process
amplified negative
resist
Prior art date
Application number
TW104109123A
Other languages
Chinese (zh)
Other versions
TW201541189A (en
Inventor
Daisuke Domon
Keiichi Masunaga
Satoshi Watanabe
Original Assignee
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co
Publication of TW201541189A publication Critical patent/TW201541189A/en
Application granted granted Critical
Publication of TWI561924B publication Critical patent/TWI561924B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
TW104109123A 2014-03-24 2015-03-23 Chemically-amplified negative resist composition and resist patterning process using the same TWI561924B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014060411A JP6059675B2 (en) 2014-03-24 2014-03-24 Chemically amplified negative resist composition and resist pattern forming method

Publications (2)

Publication Number Publication Date
TW201541189A TW201541189A (en) 2015-11-01
TWI561924B true TWI561924B (en) 2016-12-11

Family

ID=54141996

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104109123A TWI561924B (en) 2014-03-24 2015-03-23 Chemically-amplified negative resist composition and resist patterning process using the same

Country Status (4)

Country Link
US (1) US9436083B2 (en)
JP (1) JP6059675B2 (en)
KR (1) KR101858313B1 (en)
TW (1) TWI561924B (en)

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JP6062878B2 (en) * 2014-03-07 2017-01-18 信越化学工業株式会社 Chemically amplified positive resist composition and resist pattern forming method
WO2015194330A1 (en) * 2014-06-19 2015-12-23 富士フイルム株式会社 Radiation-sensitive or active-ray-light-sensitive resin composition, resist film in which same is used, mask blank, resist pattern formation method, method for manufacturing electronic device, and electronic device
US10345700B2 (en) * 2014-09-08 2019-07-09 International Business Machines Corporation Negative-tone resist compositions and multifunctional polymers therein
KR102554985B1 (en) 2015-01-16 2023-07-12 도오꾜오까고오교 가부시끼가이샤 Resist composition and method of forming resist pattern
JP6297992B2 (en) * 2015-02-05 2018-03-20 信越化学工業株式会社 Silicon-containing polymer, silicon-containing compound, resist underlayer film forming composition, and pattern forming method
US10324377B2 (en) * 2015-06-15 2019-06-18 Tokyo Ohka Kogyo Co., Ltd. Resist composition and method of forming resist pattern
JP6459989B2 (en) * 2016-01-20 2019-01-30 信越化学工業株式会社 Resist material and pattern forming method
JP6609193B2 (en) * 2016-01-25 2019-11-20 信越化学工業株式会社 Polymer compound, negative resist composition, laminate, pattern forming method, and compound
JP6729450B2 (en) * 2016-06-08 2020-07-22 信越化学工業株式会社 Polymer, negative resist material, and pattern forming method
JP6561937B2 (en) * 2016-08-05 2019-08-21 信越化学工業株式会社 Negative resist composition and resist pattern forming method
JP6922849B2 (en) * 2018-05-25 2021-08-18 信越化学工業株式会社 Monomer, polymer, negative resist composition, photomask blank, and resist pattern forming method
JP7099250B2 (en) 2018-10-25 2022-07-12 信越化学工業株式会社 Onium salt, negative resist composition and resist pattern forming method
JP7363742B2 (en) * 2019-11-20 2023-10-18 信越化学工業株式会社 Onium salt compound, chemically amplified resist composition and pattern forming method
JP2021091666A (en) * 2019-12-11 2021-06-17 信越化学工業株式会社 Onium salt compound, chemically amplified resist composition and patterning method

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TWI288298B (en) * 2000-08-08 2007-10-11 Fujifilm Corp Positive photosensitive composition
TW201142503A (en) * 2010-02-26 2011-12-01 Shinetsu Chemical Co Chemically amplified negative resist composition and patterning process

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JP5561192B2 (en) * 2010-02-26 2014-07-30 信越化学工業株式会社 High molecular compound, chemically amplified positive resist composition using the same, and pattern forming method
JP5858987B2 (en) * 2010-05-04 2016-02-10 エルジー・ケム・リミテッド Negative photoresist composition and device patterning method
TWI457318B (en) * 2010-10-05 2014-10-21 Shinetsu Chemical Co Fluorinated ester monomer, making method, and fluorinated ester polymer.
JP5365651B2 (en) * 2011-02-28 2013-12-11 信越化学工業株式会社 Chemically amplified negative resist composition and pattern forming method
JP5764480B2 (en) * 2011-11-25 2015-08-19 東京応化工業株式会社 Resist composition, resist pattern forming method, and polymer compound
JP6065862B2 (en) * 2013-04-10 2017-01-25 信越化学工業株式会社 Pattern forming method, resist composition, polymer compound and monomer
JP5904180B2 (en) * 2013-09-11 2016-04-13 信越化学工業株式会社 Sulfonium salt, chemically amplified resist composition, and pattern forming method
JP6062878B2 (en) * 2014-03-07 2017-01-18 信越化学工業株式会社 Chemically amplified positive resist composition and resist pattern forming method
JP6137046B2 (en) * 2014-05-09 2017-05-31 信越化学工業株式会社 Monomer, polymer compound, resist material and pattern forming method

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
TWI288298B (en) * 2000-08-08 2007-10-11 Fujifilm Corp Positive photosensitive composition
TW201142503A (en) * 2010-02-26 2011-12-01 Shinetsu Chemical Co Chemically amplified negative resist composition and patterning process

Also Published As

Publication number Publication date
JP6059675B2 (en) 2017-01-11
TW201541189A (en) 2015-11-01
US9436083B2 (en) 2016-09-06
KR20150110371A (en) 2015-10-02
US20150268556A1 (en) 2015-09-24
JP2015184456A (en) 2015-10-22
KR101858313B1 (en) 2018-06-28

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