TWI561909B - - Google Patents

Info

Publication number
TWI561909B
TWI561909B TW102124965A TW102124965A TWI561909B TW I561909 B TWI561909 B TW I561909B TW 102124965 A TW102124965 A TW 102124965A TW 102124965 A TW102124965 A TW 102124965A TW I561909 B TWI561909 B TW I561909B
Authority
TW
Taiwan
Application number
TW102124965A
Other versions
TW201403214A (zh
Inventor
Yasushi Okubo
Ryo Ohkubo
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of TW201403214A publication Critical patent/TW201403214A/zh
Application granted granted Critical
Publication of TWI561909B publication Critical patent/TWI561909B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
    • C03C17/3429—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating
    • C03C17/3435—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising a nitride, oxynitride, boronitride or carbonitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/30—Aspects of methods for coating glass not covered above
    • C03C2218/32—After-treatment
    • C03C2218/328—Partly or completely removing a coating
    • C03C2218/33—Partly or completely removing a coating by etching
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/30—Aspects of methods for coating glass not covered above
    • C03C2218/34—Masking

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
TW102124965A 2012-07-13 2013-07-11 遮罩基底及相移遮罩之製造方法 TW201403214A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012157588 2012-07-13

Publications (2)

Publication Number Publication Date
TW201403214A TW201403214A (zh) 2014-01-16
TWI561909B true TWI561909B (zh) 2016-12-11

Family

ID=49915874

Family Applications (2)

Application Number Title Priority Date Filing Date
TW105132478A TWI620002B (zh) 2012-07-13 2013-07-11 遮罩基底及相移遮罩之製造方法
TW102124965A TW201403214A (zh) 2012-07-13 2013-07-11 遮罩基底及相移遮罩之製造方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW105132478A TWI620002B (zh) 2012-07-13 2013-07-11 遮罩基底及相移遮罩之製造方法

Country Status (5)

Country Link
US (2) US9494852B2 (zh)
JP (2) JP5690023B2 (zh)
KR (2) KR102056509B1 (zh)
TW (2) TWI620002B (zh)
WO (1) WO2014010408A1 (zh)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102046729B1 (ko) * 2013-09-24 2019-11-19 호야 가부시키가이샤 마스크 블랭크, 전사용 마스크, 및 반도체 디바이스의 제조방법
TW201537281A (zh) * 2014-03-18 2015-10-01 Hoya Corp 光罩基底、相偏移光罩及半導體裝置之製造方法
JP5668168B1 (ja) * 2014-06-17 2015-02-12 株式会社エスケーエレクトロニクス プロキシミティ露光用フォトマスク
US10481485B2 (en) * 2015-05-15 2019-11-19 Hoya Corporation Mask blank, transfer mask, method of manufacturing transfer mask and method of manufacturing semiconductor device
JP2016224289A (ja) * 2015-06-01 2016-12-28 Hoya株式会社 フォトマスクの製造方法、フォトマスク及び表示装置の製造方法
JP6565415B2 (ja) * 2015-07-22 2019-08-28 大日本印刷株式会社 インプリントモールド製造用の基板およびインプリントモールドの製造方法
WO2017038213A1 (ja) 2015-08-31 2017-03-09 Hoya株式会社 マスクブランク、位相シフトマスクおよびその製造方法、並びに半導体デバイスの製造方法
TWI684822B (zh) * 2015-09-30 2020-02-11 日商Ｈｏｙａ股份有限公司 空白遮罩、相位移轉遮罩及半導體元件之製造方法
SG11201807932XA (en) * 2016-03-29 2018-10-30 Hoya Corp Mask blank, method for manufacturing mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device
KR102624985B1 (ko) 2016-07-26 2024-01-16 삼성전자주식회사 마스크 블랭크, 위상 시프트 마스크 및 그 제조방법
KR20240025717A (ko) 2017-03-03 2024-02-27 호야 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법
JP6861095B2 (ja) * 2017-03-03 2021-04-21 Hoya株式会社 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
WO2018230233A1 (ja) * 2017-06-14 2018-12-20 Hoya株式会社 マスクブランク、位相シフトマスク及び半導体デバイスの製造方法
US11289328B2 (en) * 2018-06-30 2022-03-29 Applied Materials Inc. Deposition and etch processes of chromium-containing thin films for semiconductor manufacturing
TWI707195B (zh) * 2020-02-14 2020-10-11 力晶積成電子製造股份有限公司 相位轉移光罩的製造方法
US11111176B1 (en) * 2020-02-27 2021-09-07 Applied Materials, Inc. Methods and apparatus of processing transparent substrates
JP7331793B2 (ja) * 2020-06-30 2023-08-23 信越化学工業株式会社 フォトマスクの製造方法及びフォトマスクブランク
JP7296927B2 (ja) * 2020-09-17 2023-06-23 信越化学工業株式会社 位相シフトマスクブランク、位相シフトマスクの製造方法、及び位相シフトマスク

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002287330A (ja) * 2002-03-01 2002-10-03 Shin Etsu Chem Co Ltd フォトマスク用ブランクス及びフォトマスク
US20070248897A1 (en) * 2006-04-21 2007-10-25 Shin-Etsu Chemical Co., Ltd. & Toppan Printing Co. , Ltd. Photomask blank
TW201001059A (en) * 2008-03-31 2010-01-01 Hoya Corp Photomask blank, photomask, and methods of manufacturing the same

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3225074B2 (ja) 1992-02-21 2001-11-05 大日本印刷株式会社 位相シフトフォトマスクの製造方法
JPH05265181A (ja) * 1992-03-19 1993-10-15 Nec Corp 縮小投影露光用レティクル及びそれに用いるブランク
JPH07134389A (ja) * 1993-06-25 1995-05-23 Hoya Corp 位相シフトマスクブランクの製造方法及び位相シフトマスクの製造方法
JPH0934099A (ja) * 1995-07-25 1997-02-07 Hoya Corp 位相シフトマスク及びその製造方法
JP2005284216A (ja) 2004-03-31 2005-10-13 Shin Etsu Chem Co Ltd 成膜用ターゲット及び位相シフトマスクブランクの製造方法
JP4462423B2 (ja) * 2005-01-14 2010-05-12 信越化学工業株式会社 フォトマスクブランクの製造方法
JP5165833B2 (ja) 2005-02-04 2013-03-21 信越化学工業株式会社 フォトマスクブランク、フォトマスク、およびフォトマスクブランクの製造方法
JP4933754B2 (ja) * 2005-07-21 2012-05-16 信越化学工業株式会社 フォトマスクブランクおよびフォトマスクならびにこれらの製造方法
JP4834203B2 (ja) * 2005-09-30 2011-12-14 Ｈｏｙａ株式会社 フォトマスクブランクの製造方法及びフォトマスクの製造方法
JP4509050B2 (ja) 2006-03-10 2010-07-21 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
JP5044262B2 (ja) * 2007-04-10 2012-10-10 株式会社エスケーエレクトロニクス 多階調フォトマスク及びその製造方法
JP4989800B2 (ja) 2008-09-27 2012-08-01 Ｈｏｙａ株式会社 マスクブランク及び転写用マスクの製造方法
JP5182029B2 (ja) * 2008-11-18 2013-04-10 大日本印刷株式会社 階調マスク
JP5666218B2 (ja) * 2009-10-06 2015-02-12 Hoya株式会社 マスクブランク、転写用マスク、および転写用マスクセット
JP5221495B2 (ja) * 2009-11-30 2013-06-26 Ｈｏｙａ株式会社 マスクブランクの製造方法
JP4697495B2 (ja) * 2010-05-28 2011-06-08 信越化学工業株式会社 フォトマスクブランク及びフォトマスクの製造方法
JP2012027237A (ja) * 2010-07-23 2012-02-09 Fujitsu Semiconductor Ltd フォトマスクの製造方法及び半導体装置の製造方法
JP5644293B2 (ja) 2010-09-10 2014-12-24 信越化学工業株式会社 遷移金属ケイ素系材料膜の設計方法
JP5367913B2 (ja) * 2010-11-22 2013-12-11 信越化学工業株式会社 フォトマスクブランクおよびフォトマスクの製造方法ならびにクロム系材料膜
JP4930737B2 (ja) * 2011-09-21 2012-05-16 信越化学工業株式会社 フォトマスクブランク及びバイナリーマスクの製造方法
JP4930736B2 (ja) * 2011-09-21 2012-05-16 信越化学工業株式会社 フォトマスクの製造方法及びフォトマスク

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002287330A (ja) * 2002-03-01 2002-10-03 Shin Etsu Chem Co Ltd フォトマスク用ブランクス及びフォトマスク
US20070248897A1 (en) * 2006-04-21 2007-10-25 Shin-Etsu Chemical Co., Ltd. & Toppan Printing Co. , Ltd. Photomask blank
TW201001059A (en) * 2008-03-31 2010-01-01 Hoya Corp Photomask blank, photomask, and methods of manufacturing the same

Also Published As

Publication number Publication date
TWI620002B (zh) 2018-04-01
TW201403214A (zh) 2014-01-16
KR102068952B1 (ko) 2020-01-21
JP6053836B2 (ja) 2016-12-27
KR20190139337A (ko) 2019-12-17
JP5690023B2 (ja) 2015-03-25
TW201702729A (zh) 2017-01-16
JP2015121801A (ja) 2015-07-02
US20170023856A1 (en) 2017-01-26
US9494852B2 (en) 2016-11-15
WO2014010408A1 (ja) 2014-01-16
JPWO2014010408A1 (ja) 2016-06-23
US9952497B2 (en) 2018-04-24
US20150198873A1 (en) 2015-07-16
KR102056509B1 (ko) 2019-12-16
KR20150034766A (ko) 2015-04-03

Similar Documents

Publication Publication Date Title
BR112014018154A2 (zh)
BR112014017614A2 (zh)
BR112014023828A2 (zh)
BR112014017592A2 (zh)
BR112014017646A2 (zh)
AR092201A1 (zh)
BR112014017607A2 (zh)
TWI561909B (zh)
BR112014019762A2 (zh)
BR112013027865A2 (zh)
BR112014019564A2 (zh)
BR112014017609A2 (zh)
BR112014018485A2 (zh)
BR112014017588A2 (zh)
BR112014017618A2 (zh)
BR112014013184A8 (zh)
BR112014017825A2 (zh)
BR112014017621A2 (zh)
BR112014018049A2 (zh)
BR112014020386A2 (zh)
BR112014018450A2 (zh)
BR112014017667A2 (zh)
BR112014017600A2 (zh)
BR112014017671A2 (zh)
BR112014017596A2 (zh)