TWI560314B - Film deposition apparatus and substrate processing apparatus - Google Patents

Film deposition apparatus and substrate processing apparatus

Info

Publication number
TWI560314B
TWI560314B TW101134608A TW101134608A TWI560314B TW I560314 B TWI560314 B TW I560314B TW 101134608 A TW101134608 A TW 101134608A TW 101134608 A TW101134608 A TW 101134608A TW I560314 B TWI560314 B TW I560314B
Authority
TW
Taiwan
Prior art keywords
substrate processing
film deposition
processing apparatus
deposition apparatus
film
Prior art date
Application number
TW101134608A
Other languages
English (en)
Other versions
TW201329283A (zh
Inventor
Manabu Honma
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW201329283A publication Critical patent/TW201329283A/zh
Application granted granted Critical
Publication of TWI560314B publication Critical patent/TWI560314B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
TW101134608A 2011-09-22 2012-09-21 Film deposition apparatus and substrate processing apparatus TWI560314B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011207990A JP5712879B2 (ja) 2011-09-22 2011-09-22 成膜装置及び基板処理装置

Publications (2)

Publication Number Publication Date
TW201329283A TW201329283A (zh) 2013-07-16
TWI560314B true TWI560314B (en) 2016-12-01

Family

ID=47909829

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101134608A TWI560314B (en) 2011-09-22 2012-09-21 Film deposition apparatus and substrate processing apparatus

Country Status (5)

Country Link
US (1) US20130074770A1 (zh)
JP (1) JP5712879B2 (zh)
KR (1) KR101532122B1 (zh)
CN (1) CN103014671B (zh)
TW (1) TWI560314B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102349846A (zh) * 2011-09-14 2012-02-15 迈柯唯医疗设备(苏州)有限公司 一种医用小车转动把手的角度锁紧调节机构及其应用公式

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5445044B2 (ja) * 2008-11-14 2014-03-19 東京エレクトロン株式会社 成膜装置
JP5131240B2 (ja) * 2009-04-09 2013-01-30 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
TWI627305B (zh) * 2013-03-15 2018-06-21 應用材料股份有限公司 用於轉盤處理室之具有剛性板的大氣蓋
JP6115244B2 (ja) * 2013-03-28 2017-04-19 東京エレクトロン株式会社 成膜装置
KR101466816B1 (ko) * 2013-09-23 2014-12-10 국제엘렉트릭코리아 주식회사 히터 부재 및 그것을 갖는 기판 처리 장치
JP6287240B2 (ja) * 2014-01-17 2018-03-07 東京エレクトロン株式会社 真空処理装置及び真空処理方法
JP6221932B2 (ja) * 2014-05-16 2017-11-01 東京エレクトロン株式会社 成膜装置
US9920427B2 (en) 2015-02-02 2018-03-20 Toshiba Memory Corporation Semiconductor manufacturing apparatus and manufacturing method of semiconductor device
JP6319158B2 (ja) * 2015-04-03 2018-05-09 トヨタ自動車株式会社 成膜方法および成膜装置
WO2017139483A1 (en) * 2016-02-12 2017-08-17 Tokyo Electron Limited Method and apparatus for multi-film deposition and etching in a batch processing system
JP6767844B2 (ja) * 2016-11-11 2020-10-14 東京エレクトロン株式会社 成膜装置及び成膜方法
JP6739370B2 (ja) * 2017-02-01 2020-08-12 東京エレクトロン株式会社 基板処理装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100055314A1 (en) * 2008-08-29 2010-03-04 Tokyo Electron Limited Film deposition apparatus, film deposition method, and storage medium

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4233348B2 (ja) * 2003-02-24 2009-03-04 シャープ株式会社 プラズマプロセス装置
JP2009224366A (ja) * 2008-03-13 2009-10-01 Sekisui Chem Co Ltd エッチング装置
US8465592B2 (en) * 2008-08-25 2013-06-18 Tokyo Electron Limited Film deposition apparatus
US8808456B2 (en) * 2008-08-29 2014-08-19 Tokyo Electron Limited Film deposition apparatus and substrate process apparatus
JP5253932B2 (ja) * 2008-09-04 2013-07-31 東京エレクトロン株式会社 成膜装置、基板処理装置、成膜方法及び記憶媒体
JP5276388B2 (ja) * 2008-09-04 2013-08-28 東京エレクトロン株式会社 成膜装置及び基板処理装置
JP5131240B2 (ja) * 2009-04-09 2013-01-30 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
JP5553588B2 (ja) * 2009-12-10 2014-07-16 東京エレクトロン株式会社 成膜装置
JP5396264B2 (ja) * 2009-12-25 2014-01-22 東京エレクトロン株式会社 成膜装置
JP5765154B2 (ja) * 2011-09-12 2015-08-19 東京エレクトロン株式会社 基板処理装置及び成膜装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100055314A1 (en) * 2008-08-29 2010-03-04 Tokyo Electron Limited Film deposition apparatus, film deposition method, and storage medium

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102349846A (zh) * 2011-09-14 2012-02-15 迈柯唯医疗设备(苏州)有限公司 一种医用小车转动把手的角度锁紧调节机构及其应用公式

Also Published As

Publication number Publication date
KR101532122B1 (ko) 2015-06-26
CN103014671B (zh) 2016-07-13
JP2013069909A (ja) 2013-04-18
CN103014671A (zh) 2013-04-03
US20130074770A1 (en) 2013-03-28
KR20130032273A (ko) 2013-04-01
JP5712879B2 (ja) 2015-05-07
TW201329283A (zh) 2013-07-16

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