TWI559818B - Substrate processing device - Google Patents

Substrate processing device Download PDF

Info

Publication number
TWI559818B
TWI559818B TW102101723A TW102101723A TWI559818B TW I559818 B TWI559818 B TW I559818B TW 102101723 A TW102101723 A TW 102101723A TW 102101723 A TW102101723 A TW 102101723A TW I559818 B TWI559818 B TW I559818B
Authority
TW
Taiwan
Prior art keywords
group
electromagnets
electromagnet
processing space
frequency power
Prior art date
Application number
TW102101723A
Other languages
English (en)
Chinese (zh)
Other versions
TW201352075A (zh
Inventor
橫田聰裕
伊藤悅治
檜森慎司
Original Assignee
東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京威力科創股份有限公司 filed Critical 東京威力科創股份有限公司
Publication of TW201352075A publication Critical patent/TW201352075A/zh
Application granted granted Critical
Publication of TWI559818B publication Critical patent/TWI559818B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3492—Variation of parameters during sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0242—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising etching via holes from the back sides of the chips, wafers or substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW102101723A 2012-01-18 2013-01-17 Substrate processing device TWI559818B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012008019A JP6018757B2 (ja) 2012-01-18 2012-01-18 基板処理装置

Publications (2)

Publication Number Publication Date
TW201352075A TW201352075A (zh) 2013-12-16
TWI559818B true TWI559818B (zh) 2016-11-21

Family

ID=48799346

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102101723A TWI559818B (zh) 2012-01-18 2013-01-17 Substrate processing device

Country Status (5)

Country Link
US (2) US20140346040A1 (https=)
JP (1) JP6018757B2 (https=)
KR (2) KR102148005B1 (https=)
TW (1) TWI559818B (https=)
WO (1) WO2013108930A1 (https=)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6009171B2 (ja) * 2012-02-14 2016-10-19 東京エレクトロン株式会社 基板処理装置
JP6317139B2 (ja) 2014-03-04 2018-04-25 東京エレクトロン株式会社 プラズマ処理装置のクリーニング方法及びプラズマ処理装置
JP6244518B2 (ja) 2014-04-09 2017-12-13 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US10091594B2 (en) 2014-07-29 2018-10-02 Cochlear Limited Bone conduction magnetic retention system
WO2016181919A1 (ja) 2015-05-11 2016-11-17 株式会社荏原製作所 電磁石装置、電磁石制御装置、電磁石制御方法、および電磁石システム
US10130807B2 (en) 2015-06-12 2018-11-20 Cochlear Limited Magnet management MRI compatibility
US20160381473A1 (en) 2015-06-26 2016-12-29 Johan Gustafsson Magnetic retention device
US10917730B2 (en) * 2015-09-14 2021-02-09 Cochlear Limited Retention magnet system for medical device
JP6516649B2 (ja) * 2015-10-09 2019-05-22 東京エレクトロン株式会社 プラズマエッチング方法
JP7055054B2 (ja) * 2018-04-11 2022-04-15 東京エレクトロン株式会社 プラズマ処理装置、プラズマ制御方法、及びプラズマ制御プログラム
JP6964039B2 (ja) 2018-04-20 2021-11-10 株式会社荏原製作所 電磁石制御装置および電磁石システム
JP7222848B2 (ja) 2019-08-26 2023-02-15 株式会社荏原製作所 電磁石制御装置および電磁石システム
WO2021059163A1 (en) 2019-09-27 2021-04-01 Cochlear Limited Multipole magnet for medical implant system
US11787008B2 (en) 2020-12-18 2023-10-17 Applied Materials, Inc. Chemical mechanical polishing with applied magnetic field
CN113699495B (zh) * 2021-06-21 2023-12-22 北京北方华创微电子装备有限公司 磁控溅射组件、磁控溅射设备及磁控溅射方法
USD1103948S1 (en) * 2021-08-21 2025-12-02 Applied Materials, Inc. Gas distribution plate
USD1104086S1 (en) * 2021-08-21 2025-12-02 Applied Materials, Inc. Gas distribution plate
USD1071103S1 (en) * 2022-04-11 2025-04-15 Applied Materials, Inc. Gas distribution plate
JP7685973B2 (ja) 2022-05-25 2025-05-30 東京エレクトロン株式会社 基板処理方法及び基板処理装置
USD1085029S1 (en) * 2022-07-19 2025-07-22 Applied Materials, Inc. Gas distribution plate
CN117894662B (zh) * 2024-01-15 2024-10-25 北京北方华创微电子装备有限公司 一种工艺腔室及半导体工艺设备
CN119764154B (zh) * 2025-03-07 2025-10-28 上海邦芯半导体科技有限公司 一种等离子体刻蚀设备以及刻蚀方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09115882A (ja) * 1995-10-19 1997-05-02 Hitachi Ltd プラズマ処理方法およびその装置
TW314685B (https=) * 1995-02-13 1997-09-01 Mitsubishi Electric Corp
TW511398B (en) * 2000-09-12 2002-11-21 Tokyo Electron Ltd Apparatus and method to control the uniformity of plasma by reducing radial loss
JP2011060885A (ja) * 2009-09-08 2011-03-24 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0165132U (https=) * 1987-10-21 1989-04-26
JP2969529B2 (ja) * 1990-07-20 1999-11-02 日本真空技術株式会社 プラズマエッチング装置
JPH0810288Y2 (ja) 1990-11-28 1996-03-29 日星電気株式会社 製茶機用底板
JP3238200B2 (ja) * 1992-07-17 2001-12-10 株式会社東芝 基体処理装置及び半導体素子製造方法
JP3037848B2 (ja) 1992-04-17 2000-05-08 東京エレクトロン株式会社 プラズマ発生装置およびプラズマ発生方法
US6022446A (en) 1995-08-21 2000-02-08 Shan; Hongching Shallow magnetic fields for generating circulating electrons to enhance plasma processing
JP4107518B2 (ja) 1996-07-03 2008-06-25 東京エレクトロン株式会社 プラズマ処理装置
JP3037848U (ja) 1996-08-26 1997-05-27 永田醸造機械株式会社 連続浸漬吸水装置
JP3375302B2 (ja) 1998-07-29 2003-02-10 東京エレクトロン株式会社 マグネトロンプラズマ処理装置および処理方法
JP2000200696A (ja) * 1999-01-07 2000-07-18 Matsushita Electric Ind Co Ltd プラズマ制御方法と半導体製造装置
DE10196963T1 (de) * 2000-12-05 2003-11-20 Trikon Holdings Ltd Magnetron-Sputtervorrichtung
JP4606637B2 (ja) * 2001-04-12 2011-01-05 キヤノンアネルバ株式会社 マグネトロン型平行平板表面処理装置
US20030024478A1 (en) * 2001-08-06 2003-02-06 Anelva Corporation Surface processing apparatus
JP4392852B2 (ja) * 2001-12-07 2010-01-06 東京エレクトロン株式会社 プラズマ処理装置に用いられる排気リング機構及びプラズマ処理装置
JP4251817B2 (ja) * 2002-04-26 2009-04-08 キヤノンアネルバ株式会社 プラズマ生成用ポイントカスプ磁界を作るマグネット配列およびプラズマ処理装置
JP4355157B2 (ja) * 2003-03-31 2009-10-28 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置及び磁場発生装置
JP2004335637A (ja) * 2003-05-06 2004-11-25 Anelva Corp エッチング方法及びエッチング装置
JP5031252B2 (ja) 2006-03-30 2012-09-19 東京エレクトロン株式会社 プラズマ処理装置
JP5514413B2 (ja) * 2007-08-17 2014-06-04 東京エレクトロン株式会社 プラズマエッチング方法
US7816945B2 (en) 2009-01-22 2010-10-19 International Business Machines Corporation 3D chip-stack with fuse-type through silicon via

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW314685B (https=) * 1995-02-13 1997-09-01 Mitsubishi Electric Corp
JPH09115882A (ja) * 1995-10-19 1997-05-02 Hitachi Ltd プラズマ処理方法およびその装置
TW511398B (en) * 2000-09-12 2002-11-21 Tokyo Electron Ltd Apparatus and method to control the uniformity of plasma by reducing radial loss
JP2011060885A (ja) * 2009-09-08 2011-03-24 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法

Also Published As

Publication number Publication date
JP2013149722A (ja) 2013-08-01
US10651012B2 (en) 2020-05-12
WO2013108930A1 (ja) 2013-07-25
KR20140114821A (ko) 2014-09-29
KR20190104436A (ko) 2019-09-09
JP6018757B2 (ja) 2016-11-02
US20170162367A1 (en) 2017-06-08
US20140346040A1 (en) 2014-11-27
TW201352075A (zh) 2013-12-16
KR102148005B1 (ko) 2020-08-25

Similar Documents

Publication Publication Date Title
TWI559818B (zh) Substrate processing device
KR102361240B1 (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법
KR100781030B1 (ko) 마그네트론 플라즈마용 자장 발생 장치
TWI576913B (zh) Substrate processing device
JP6244518B2 (ja) プラズマ処理方法及びプラズマ処理装置
JP6284825B2 (ja) プラズマ処理装置
US20170186591A1 (en) Cleaning method of plasma processing apparatus and plasma processing apparatus
JP5890609B2 (ja) プラズマ処理装置
JP6462072B2 (ja) プラズマ処理装置及びプラズマ処理方法
KR100739959B1 (ko) 반도체 장치 제조용 식각 챔버
JPS63241190A (ja) 枚葉式プラズマ処理装置
JP4123495B2 (ja) マグネトロンプラズマ用磁場発生装置
JP2007134428A (ja) ドライエッチング方法およびその装置