TWI559096B - 曝光設備及裝置製造方法 - Google Patents
曝光設備及裝置製造方法 Download PDFInfo
- Publication number
- TWI559096B TWI559096B TW103130247A TW103130247A TWI559096B TW I559096 B TWI559096 B TW I559096B TW 103130247 A TW103130247 A TW 103130247A TW 103130247 A TW103130247 A TW 103130247A TW I559096 B TWI559096 B TW I559096B
- Authority
- TW
- Taiwan
- Prior art keywords
- exposure
- substrate
- immersion liquid
- tables
- exposure apparatus
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000007654 immersion Methods 0.000 claims description 126
- 239000007788 liquid Substances 0.000 claims description 109
- 239000000758 substrate Substances 0.000 claims description 89
- 238000005259 measurement Methods 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 28
- 230000003287 optical effect Effects 0.000 claims description 27
- 238000012545 processing Methods 0.000 claims description 26
- 230000008569 process Effects 0.000 claims description 14
- 230000008859 change Effects 0.000 claims description 7
- 238000006073 displacement reaction Methods 0.000 claims description 7
- 238000012546 transfer Methods 0.000 claims description 4
- 238000012986 modification Methods 0.000 claims description 2
- 230000004048 modification Effects 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 claims 3
- 239000002131 composite material Substances 0.000 claims 3
- 239000013598 vector Substances 0.000 claims 2
- 238000001802 infusion Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 63
- 238000001514 detection method Methods 0.000 description 10
- 238000005286 illumination Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000003504 photosensitizing agent Substances 0.000 description 3
- 238000004064 recycling Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000012840 feeding operation Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
- G03F7/70725—Stages control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013185914A JP6362312B2 (ja) | 2013-09-09 | 2013-09-09 | 露光装置、それを用いたデバイスの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201512790A TW201512790A (zh) | 2015-04-01 |
| TWI559096B true TWI559096B (zh) | 2016-11-21 |
Family
ID=52625305
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103130247A TWI559096B (zh) | 2013-09-09 | 2014-09-02 | 曝光設備及裝置製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US9442389B2 (enExample) |
| JP (1) | JP6362312B2 (enExample) |
| KR (3) | KR20150029576A (enExample) |
| TW (1) | TWI559096B (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6362312B2 (ja) * | 2013-09-09 | 2018-07-25 | キヤノン株式会社 | 露光装置、それを用いたデバイスの製造方法 |
| CN111610696A (zh) * | 2015-02-23 | 2020-09-01 | 株式会社尼康 | 基板处理系统及基板处理方法、以及组件制造方法 |
| CN111176084B (zh) | 2015-02-23 | 2023-07-28 | 株式会社尼康 | 测量装置、曝光装置、光刻系统、测量方法及曝光方法 |
| KR102688211B1 (ko) | 2015-02-23 | 2024-07-24 | 가부시키가이샤 니콘 | 계측 장치, 리소그래피 시스템 및 노광 장치, 그리고 디바이스 제조 방법 |
| KR20210023375A (ko) | 2019-08-23 | 2021-03-04 | 삼성전자주식회사 | 레이저 전사 장치 및 이를 이용한 전사 방법 |
| EP3859448A1 (en) * | 2020-01-28 | 2021-08-04 | ASML Netherlands B.V. | Positioning device and method to use a positioning device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060132733A1 (en) * | 2004-12-20 | 2006-06-22 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US20060227308A1 (en) * | 2005-04-08 | 2006-10-12 | Asml Netherlands B.V. | Dual stage lithographic apparatus and device manufacturing method |
| US20090153822A1 (en) * | 2007-12-14 | 2009-06-18 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
| US20090225288A1 (en) * | 2007-11-07 | 2009-09-10 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2753930B2 (ja) * | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
| EP2613195B1 (en) * | 2003-04-11 | 2015-12-16 | Nikon Corporation | Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine |
| EP1918983A4 (en) * | 2005-08-05 | 2010-03-31 | Nikon Corp | STAGE EQUIPMENT AND EXPOSURE DEVICE |
| US7483120B2 (en) * | 2006-05-09 | 2009-01-27 | Asml Netherlands B.V. | Displacement measurement system, lithographic apparatus, displacement measurement method and device manufacturing method |
| JP2008124219A (ja) | 2006-11-10 | 2008-05-29 | Canon Inc | 液浸露光装置 |
| JP5089143B2 (ja) * | 2006-11-20 | 2012-12-05 | キヤノン株式会社 | 液浸露光装置 |
| US8279399B2 (en) | 2007-10-22 | 2012-10-02 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
| JP2009218564A (ja) * | 2008-02-12 | 2009-09-24 | Canon Inc | 露光装置及びデバイス製造方法 |
| JP2010016111A (ja) * | 2008-07-02 | 2010-01-21 | Nikon Corp | 露光装置、及びデバイス製造方法 |
| JP5795198B2 (ja) * | 2011-06-10 | 2015-10-14 | 本田技研工業株式会社 | アーク溶接方法 |
| JP6362312B2 (ja) * | 2013-09-09 | 2018-07-25 | キヤノン株式会社 | 露光装置、それを用いたデバイスの製造方法 |
-
2013
- 2013-09-09 JP JP2013185914A patent/JP6362312B2/ja active Active
-
2014
- 2014-09-02 TW TW103130247A patent/TWI559096B/zh active
- 2014-09-04 US US14/477,283 patent/US9442389B2/en active Active
- 2014-09-05 KR KR20140118512A patent/KR20150029576A/ko not_active Ceased
-
2016
- 2016-05-23 US US15/161,676 patent/US9885963B2/en active Active
-
2017
- 2017-12-29 US US15/858,108 patent/US20180136572A1/en not_active Abandoned
-
2018
- 2018-04-16 KR KR1020180043866A patent/KR101947568B1/ko active Active
-
2019
- 2019-02-01 KR KR1020190013795A patent/KR102022823B1/ko active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060132733A1 (en) * | 2004-12-20 | 2006-06-22 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US20060227308A1 (en) * | 2005-04-08 | 2006-10-12 | Asml Netherlands B.V. | Dual stage lithographic apparatus and device manufacturing method |
| US20090225288A1 (en) * | 2007-11-07 | 2009-09-10 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
| US20090153822A1 (en) * | 2007-12-14 | 2009-06-18 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| US20150070667A1 (en) | 2015-03-12 |
| US20180136572A1 (en) | 2018-05-17 |
| US9442389B2 (en) | 2016-09-13 |
| US20160291483A1 (en) | 2016-10-06 |
| TW201512790A (zh) | 2015-04-01 |
| US9885963B2 (en) | 2018-02-06 |
| KR20190015451A (ko) | 2019-02-13 |
| KR101947568B1 (ko) | 2019-02-14 |
| KR20150029576A (ko) | 2015-03-18 |
| KR102022823B1 (ko) | 2019-09-18 |
| JP6362312B2 (ja) | 2018-07-25 |
| KR20180041649A (ko) | 2018-04-24 |
| JP2015053409A (ja) | 2015-03-19 |
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