TWI559096B - 曝光設備及裝置製造方法 - Google Patents

曝光設備及裝置製造方法 Download PDF

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Publication number
TWI559096B
TWI559096B TW103130247A TW103130247A TWI559096B TW I559096 B TWI559096 B TW I559096B TW 103130247 A TW103130247 A TW 103130247A TW 103130247 A TW103130247 A TW 103130247A TW I559096 B TWI559096 B TW I559096B
Authority
TW
Taiwan
Prior art keywords
exposure
substrate
immersion liquid
tables
exposure apparatus
Prior art date
Application number
TW103130247A
Other languages
English (en)
Chinese (zh)
Other versions
TW201512790A (zh
Inventor
松本英樹
Original Assignee
佳能股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 佳能股份有限公司 filed Critical 佳能股份有限公司
Publication of TW201512790A publication Critical patent/TW201512790A/zh
Application granted granted Critical
Publication of TWI559096B publication Critical patent/TWI559096B/zh

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Classifications

    • H10P76/2041—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW103130247A 2013-09-09 2014-09-02 曝光設備及裝置製造方法 TWI559096B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013185914A JP6362312B2 (ja) 2013-09-09 2013-09-09 露光装置、それを用いたデバイスの製造方法

Publications (2)

Publication Number Publication Date
TW201512790A TW201512790A (zh) 2015-04-01
TWI559096B true TWI559096B (zh) 2016-11-21

Family

ID=52625305

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103130247A TWI559096B (zh) 2013-09-09 2014-09-02 曝光設備及裝置製造方法

Country Status (4)

Country Link
US (3) US9442389B2 (enExample)
JP (1) JP6362312B2 (enExample)
KR (3) KR20150029576A (enExample)
TW (1) TWI559096B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6362312B2 (ja) * 2013-09-09 2018-07-25 キヤノン株式会社 露光装置、それを用いたデバイスの製造方法
CN111290221B (zh) 2015-02-23 2023-07-28 株式会社尼康 测量装置、光刻系统、曝光装置、测量方法、曝光方法以及元件制造方法
HK1246849A1 (en) 2015-02-23 2018-09-14 Nikon Corporation Measurement device, lithography system and exposure device, and device manufacturing method
CN111948913B (zh) 2015-02-23 2023-09-01 株式会社尼康 基板处理系统及基板处理方法
KR20210023375A (ko) 2019-08-23 2021-03-04 삼성전자주식회사 레이저 전사 장치 및 이를 이용한 전사 방법
EP3859448A1 (en) * 2020-01-28 2021-08-04 ASML Netherlands B.V. Positioning device and method to use a positioning device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060132733A1 (en) * 2004-12-20 2006-06-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060227308A1 (en) * 2005-04-08 2006-10-12 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
US20090153822A1 (en) * 2007-12-14 2009-06-18 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US20090225288A1 (en) * 2007-11-07 2009-09-10 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
KR101178756B1 (ko) * 2003-04-11 2012-08-31 가부시키가이샤 니콘 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침액체를 유지하는 장치 및 방법
CN101138070B (zh) * 2005-08-05 2011-03-23 株式会社尼康 载台装置及曝光装置
US7483120B2 (en) * 2006-05-09 2009-01-27 Asml Netherlands B.V. Displacement measurement system, lithographic apparatus, displacement measurement method and device manufacturing method
JP2008124219A (ja) 2006-11-10 2008-05-29 Canon Inc 液浸露光装置
JP5089143B2 (ja) 2006-11-20 2012-12-05 キヤノン株式会社 液浸露光装置
US8279399B2 (en) * 2007-10-22 2012-10-02 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
JP2009218564A (ja) * 2008-02-12 2009-09-24 Canon Inc 露光装置及びデバイス製造方法
JP2010016111A (ja) * 2008-07-02 2010-01-21 Nikon Corp 露光装置、及びデバイス製造方法
JP5795198B2 (ja) * 2011-06-10 2015-10-14 本田技研工業株式会社 アーク溶接方法
JP6362312B2 (ja) * 2013-09-09 2018-07-25 キヤノン株式会社 露光装置、それを用いたデバイスの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060132733A1 (en) * 2004-12-20 2006-06-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060227308A1 (en) * 2005-04-08 2006-10-12 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
US20090225288A1 (en) * 2007-11-07 2009-09-10 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US20090153822A1 (en) * 2007-12-14 2009-06-18 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method

Also Published As

Publication number Publication date
KR20180041649A (ko) 2018-04-24
KR101947568B1 (ko) 2019-02-14
US20150070667A1 (en) 2015-03-12
KR20150029576A (ko) 2015-03-18
US20180136572A1 (en) 2018-05-17
US20160291483A1 (en) 2016-10-06
US9885963B2 (en) 2018-02-06
US9442389B2 (en) 2016-09-13
JP6362312B2 (ja) 2018-07-25
TW201512790A (zh) 2015-04-01
JP2015053409A (ja) 2015-03-19
KR20190015451A (ko) 2019-02-13
KR102022823B1 (ko) 2019-09-18

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