KR20150029576A - 노광 장치 및 디바이스 제조 방법 - Google Patents

노광 장치 및 디바이스 제조 방법 Download PDF

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Publication number
KR20150029576A
KR20150029576A KR20140118512A KR20140118512A KR20150029576A KR 20150029576 A KR20150029576 A KR 20150029576A KR 20140118512 A KR20140118512 A KR 20140118512A KR 20140118512 A KR20140118512 A KR 20140118512A KR 20150029576 A KR20150029576 A KR 20150029576A
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KR
South Korea
Prior art keywords
stage
exposure
stages
immersion liquid
substrate
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Ceased
Application number
KR20140118512A
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English (en)
Korean (ko)
Inventor
히데키 마츠모토
Original Assignee
캐논 가부시끼가이샤
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Publication date
Application filed by 캐논 가부시끼가이샤 filed Critical 캐논 가부시끼가이샤
Publication of KR20150029576A publication Critical patent/KR20150029576A/ko
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR20140118512A 2013-09-09 2014-09-05 노광 장치 및 디바이스 제조 방법 Ceased KR20150029576A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2013-185914 2013-09-09
JP2013185914A JP6362312B2 (ja) 2013-09-09 2013-09-09 露光装置、それを用いたデバイスの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020180043866A Division KR101947568B1 (ko) 2013-09-09 2018-04-16 노광 장치 및 디바이스 제조 방법

Publications (1)

Publication Number Publication Date
KR20150029576A true KR20150029576A (ko) 2015-03-18

Family

ID=52625305

Family Applications (3)

Application Number Title Priority Date Filing Date
KR20140118512A Ceased KR20150029576A (ko) 2013-09-09 2014-09-05 노광 장치 및 디바이스 제조 방법
KR1020180043866A Active KR101947568B1 (ko) 2013-09-09 2018-04-16 노광 장치 및 디바이스 제조 방법
KR1020190013795A Active KR102022823B1 (ko) 2013-09-09 2019-02-01 노광 장치 및 디바이스 제조 방법

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020180043866A Active KR101947568B1 (ko) 2013-09-09 2018-04-16 노광 장치 및 디바이스 제조 방법
KR1020190013795A Active KR102022823B1 (ko) 2013-09-09 2019-02-01 노광 장치 및 디바이스 제조 방법

Country Status (4)

Country Link
US (3) US9442389B2 (enExample)
JP (1) JP6362312B2 (enExample)
KR (3) KR20150029576A (enExample)
TW (1) TWI559096B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6362312B2 (ja) * 2013-09-09 2018-07-25 キヤノン株式会社 露光装置、それを用いたデバイスの製造方法
CN107278279B (zh) 2015-02-23 2020-07-03 株式会社尼康 基板处理系统及基板处理方法、以及组件制造方法
CN111158220A (zh) 2015-02-23 2020-05-15 株式会社尼康 测量装置及方法、光刻系统、曝光装置及方法
TWI693477B (zh) 2015-02-23 2020-05-11 日商尼康股份有限公司 測量裝置、微影系統及曝光裝置、以及元件製造方法
KR20210023375A (ko) 2019-08-23 2021-03-04 삼성전자주식회사 레이저 전사 장치 및 이를 이용한 전사 방법
EP3859448A1 (en) * 2020-01-28 2021-08-04 ASML Netherlands B.V. Positioning device and method to use a positioning device

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
SG139733A1 (en) * 2003-04-11 2008-02-29 Nikon Corp Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly
US7528931B2 (en) * 2004-12-20 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7161659B2 (en) * 2005-04-08 2007-01-09 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
WO2007018127A1 (ja) * 2005-08-05 2007-02-15 Nikon Corporation ステージ装置及び露光装置
US7483120B2 (en) * 2006-05-09 2009-01-27 Asml Netherlands B.V. Displacement measurement system, lithographic apparatus, displacement measurement method and device manufacturing method
JP2008124219A (ja) 2006-11-10 2008-05-29 Canon Inc 液浸露光装置
JP5089143B2 (ja) * 2006-11-20 2012-12-05 キヤノン株式会社 液浸露光装置
US8279399B2 (en) * 2007-10-22 2012-10-02 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
WO2009060585A1 (ja) * 2007-11-07 2009-05-14 Nikon Corporation 露光装置及び露光方法、並びにデバイス製造方法
US8711327B2 (en) * 2007-12-14 2014-04-29 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
JP2009218564A (ja) * 2008-02-12 2009-09-24 Canon Inc 露光装置及びデバイス製造方法
JP2010016111A (ja) * 2008-07-02 2010-01-21 Nikon Corp 露光装置、及びデバイス製造方法
JP5795198B2 (ja) * 2011-06-10 2015-10-14 本田技研工業株式会社 アーク溶接方法
JP6362312B2 (ja) * 2013-09-09 2018-07-25 キヤノン株式会社 露光装置、それを用いたデバイスの製造方法

Also Published As

Publication number Publication date
JP6362312B2 (ja) 2018-07-25
JP2015053409A (ja) 2015-03-19
US20150070667A1 (en) 2015-03-12
TWI559096B (zh) 2016-11-21
KR101947568B1 (ko) 2019-02-14
US9885963B2 (en) 2018-02-06
US9442389B2 (en) 2016-09-13
TW201512790A (zh) 2015-04-01
US20160291483A1 (en) 2016-10-06
KR20190015451A (ko) 2019-02-13
US20180136572A1 (en) 2018-05-17
KR20180041649A (ko) 2018-04-24
KR102022823B1 (ko) 2019-09-18

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