JP6362312B2 - 露光装置、それを用いたデバイスの製造方法 - Google Patents

露光装置、それを用いたデバイスの製造方法 Download PDF

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Publication number
JP6362312B2
JP6362312B2 JP2013185914A JP2013185914A JP6362312B2 JP 6362312 B2 JP6362312 B2 JP 6362312B2 JP 2013185914 A JP2013185914 A JP 2013185914A JP 2013185914 A JP2013185914 A JP 2013185914A JP 6362312 B2 JP6362312 B2 JP 6362312B2
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Japan
Prior art keywords
stage
substrate
exposure
immersion liquid
exposure apparatus
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JP2013185914A
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English (en)
Japanese (ja)
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JP2015053409A5 (enExample
JP2015053409A (ja
Inventor
松本　英樹
英樹 松本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2013185914A priority Critical patent/JP6362312B2/ja
Priority to TW103130247A priority patent/TWI559096B/zh
Priority to US14/477,283 priority patent/US9442389B2/en
Priority to KR20140118512A priority patent/KR20150029576A/ko
Publication of JP2015053409A publication Critical patent/JP2015053409A/ja
Priority to US15/161,676 priority patent/US9885963B2/en
Publication of JP2015053409A5 publication Critical patent/JP2015053409A5/ja
Priority to US15/858,108 priority patent/US20180136572A1/en
Priority to KR1020180043866A priority patent/KR101947568B1/ko
Application granted granted Critical
Publication of JP6362312B2 publication Critical patent/JP6362312B2/ja
Priority to KR1020190013795A priority patent/KR102022823B1/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2013185914A 2013-09-09 2013-09-09 露光装置、それを用いたデバイスの製造方法 Active JP6362312B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2013185914A JP6362312B2 (ja) 2013-09-09 2013-09-09 露光装置、それを用いたデバイスの製造方法
TW103130247A TWI559096B (zh) 2013-09-09 2014-09-02 曝光設備及裝置製造方法
US14/477,283 US9442389B2 (en) 2013-09-09 2014-09-04 Exposure apparatus and device manufacturing method
KR20140118512A KR20150029576A (ko) 2013-09-09 2014-09-05 노광 장치 및 디바이스 제조 방법
US15/161,676 US9885963B2 (en) 2013-09-09 2016-05-23 Exposure apparatus and device manufacturing method
US15/858,108 US20180136572A1 (en) 2013-09-09 2017-12-29 Exposure apparatus and device manufacturing method
KR1020180043866A KR101947568B1 (ko) 2013-09-09 2018-04-16 노광 장치 및 디바이스 제조 방법
KR1020190013795A KR102022823B1 (ko) 2013-09-09 2019-02-01 노광 장치 및 디바이스 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013185914A JP6362312B2 (ja) 2013-09-09 2013-09-09 露光装置、それを用いたデバイスの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2018017801A Division JP6440878B2 (ja) 2018-02-05 2018-02-05 露光装置、およびそれを用いたデバイスの製造方法

Publications (3)

Publication Number Publication Date
JP2015053409A JP2015053409A (ja) 2015-03-19
JP2015053409A5 JP2015053409A5 (enExample) 2016-10-20
JP6362312B2 true JP6362312B2 (ja) 2018-07-25

Family

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JP2013185914A Active JP6362312B2 (ja) 2013-09-09 2013-09-09 露光装置、それを用いたデバイスの製造方法

Country Status (4)

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US (3) US9442389B2 (enExample)
JP (1) JP6362312B2 (enExample)
KR (3) KR20150029576A (enExample)
TW (1) TWI559096B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6362312B2 (ja) * 2013-09-09 2018-07-25 キヤノン株式会社 露光装置、それを用いたデバイスの製造方法
CN111610696A (zh) * 2015-02-23 2020-09-01 株式会社尼康 基板处理系统及基板处理方法、以及组件制造方法
CN111176084B (zh) 2015-02-23 2023-07-28 株式会社尼康 测量装置、曝光装置、光刻系统、测量方法及曝光方法
KR102688211B1 (ko) 2015-02-23 2024-07-24 가부시키가이샤 니콘 계측 장치, 리소그래피 시스템 및 노광 장치, 그리고 디바이스 제조 방법
KR20210023375A (ko) 2019-08-23 2021-03-04 삼성전자주식회사 레이저 전사 장치 및 이를 이용한 전사 방법
EP3859448A1 (en) * 2020-01-28 2021-08-04 ASML Netherlands B.V. Positioning device and method to use a positioning device

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
EP2613195B1 (en) * 2003-04-11 2015-12-16 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US7528931B2 (en) * 2004-12-20 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7161659B2 (en) * 2005-04-08 2007-01-09 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
EP1918983A4 (en) * 2005-08-05 2010-03-31 Nikon Corp STAGE EQUIPMENT AND EXPOSURE DEVICE
US7483120B2 (en) * 2006-05-09 2009-01-27 Asml Netherlands B.V. Displacement measurement system, lithographic apparatus, displacement measurement method and device manufacturing method
JP2008124219A (ja) 2006-11-10 2008-05-29 Canon Inc 液浸露光装置
JP5089143B2 (ja) * 2006-11-20 2012-12-05 キヤノン株式会社 液浸露光装置
US8279399B2 (en) 2007-10-22 2012-10-02 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
JP4986185B2 (ja) * 2007-11-07 2012-07-25 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
US8711327B2 (en) * 2007-12-14 2014-04-29 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
JP2009218564A (ja) * 2008-02-12 2009-09-24 Canon Inc 露光装置及びデバイス製造方法
JP2010016111A (ja) * 2008-07-02 2010-01-21 Nikon Corp 露光装置、及びデバイス製造方法
JP5795198B2 (ja) * 2011-06-10 2015-10-14 本田技研工業株式会社 アーク溶接方法
JP6362312B2 (ja) * 2013-09-09 2018-07-25 キヤノン株式会社 露光装置、それを用いたデバイスの製造方法

Also Published As

Publication number Publication date
TWI559096B (zh) 2016-11-21
US20150070667A1 (en) 2015-03-12
US20180136572A1 (en) 2018-05-17
US9442389B2 (en) 2016-09-13
US20160291483A1 (en) 2016-10-06
TW201512790A (zh) 2015-04-01
US9885963B2 (en) 2018-02-06
KR20190015451A (ko) 2019-02-13
KR101947568B1 (ko) 2019-02-14
KR20150029576A (ko) 2015-03-18
KR102022823B1 (ko) 2019-09-18
KR20180041649A (ko) 2018-04-24
JP2015053409A (ja) 2015-03-19

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