TWI557959B - Manufacture method and manufacturing system of magnetoresistive effect element - Google Patents

Manufacture method and manufacturing system of magnetoresistive effect element Download PDF

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Publication number
TWI557959B
TWI557959B TW103129887A TW103129887A TWI557959B TW I557959 B TWI557959 B TW I557959B TW 103129887 A TW103129887 A TW 103129887A TW 103129887 A TW103129887 A TW 103129887A TW I557959 B TWI557959 B TW I557959B
Authority
TW
Taiwan
Prior art keywords
layer
etching
chamber
gas
ion beam
Prior art date
Application number
TW103129887A
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English (en)
Chinese (zh)
Other versions
TW201526321A (zh
Inventor
Marie Hayashi
Kiyotaka Sakamoto
Masayoshi Ikeda
Original Assignee
Canon Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp filed Critical Canon Anelva Corp
Publication of TW201526321A publication Critical patent/TW201526321A/zh
Application granted granted Critical
Publication of TWI557959B publication Critical patent/TWI557959B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW103129887A 2013-09-25 2014-08-29 Manufacture method and manufacturing system of magnetoresistive effect element TWI557959B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013197982 2013-09-25

Publications (2)

Publication Number Publication Date
TW201526321A TW201526321A (zh) 2015-07-01
TWI557959B true TWI557959B (zh) 2016-11-11

Family

ID=52742389

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103129887A TWI557959B (zh) 2013-09-25 2014-08-29 Manufacture method and manufacturing system of magnetoresistive effect element

Country Status (5)

Country Link
US (2) US20160204342A1 (OSRAM)
JP (2) JP5824189B2 (OSRAM)
KR (1) KR101862632B1 (OSRAM)
TW (1) TWI557959B (OSRAM)
WO (1) WO2015045205A1 (OSRAM)

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JP5824189B2 (ja) 2013-09-25 2015-11-25 キヤノンアネルバ株式会社 磁気抵抗効果素子の製造システム
US9779955B2 (en) 2016-02-25 2017-10-03 Lam Research Corporation Ion beam etching utilizing cryogenic wafer temperatures
JP2018147916A (ja) * 2017-03-01 2018-09-20 ソニーセミコンダクタソリューションズ株式会社 磁気記憶素子、磁気記憶装置、電子機器、および磁気記憶素子の製造方法
US10522749B2 (en) * 2017-05-15 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damage
US10043851B1 (en) * 2017-08-03 2018-08-07 Headway Technologies, Inc. Etch selectivity by introducing oxidants to noble gas during physical magnetic tunnel junction (MTJ) etching
EP3676884B1 (en) 2017-08-29 2021-11-10 Everspin Technologies, Inc. Method of etching magnetoresistive stack
US10573449B2 (en) * 2017-10-16 2020-02-25 Tdk Corporation Tunnel magnetoresistive effect element
US11195703B2 (en) 2018-12-07 2021-12-07 Applied Materials, Inc. Apparatus and techniques for angled etching using multielectrode extraction source
US11715621B2 (en) 2018-12-17 2023-08-01 Applied Materials, Inc. Scanned angled etching apparatus and techniques providing separate co-linear radicals and ions
CN113383435A (zh) * 2019-02-01 2021-09-10 朗姆研究公司 利用气体处理及脉冲化的离子束蚀刻
KR102755515B1 (ko) 2019-02-28 2025-01-14 램 리써치 코포레이션 측벽 세정을 사용한 이온 빔 에칭
US20210234091A1 (en) * 2020-01-24 2021-07-29 Applied Materials, Inc. Magnetic memory and method of fabrication

Citations (4)

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TW200717470A (en) * 2005-09-13 2007-05-01 Canon Anelva Corp Method and apparatus for manufacturing of magneto-resistance effect element
JP2010186869A (ja) * 2009-02-12 2010-08-26 Toshiba Corp 磁気抵抗効果素子及びその製造方法
TW201203351A (en) * 2010-03-10 2012-01-16 Applied Materials Inc Apparatus and methods for cyclical oxidation and etching
US8472149B2 (en) * 2007-10-01 2013-06-25 Tdk Corporation CPP type magneto-resistive effect device and magnetic disk system

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JPH04254328A (ja) * 1991-02-06 1992-09-09 Fujitsu Ltd 半導体装置の製造方法
JP3603062B2 (ja) * 2000-09-06 2004-12-15 松下電器産業株式会社 磁気抵抗効果素子とその製造方法、およびこれを用いた磁気デバイス
JP3558996B2 (ja) * 2001-03-30 2004-08-25 株式会社東芝 磁気抵抗効果素子、磁気ヘッド、磁気再生装置及び磁気記憶装置
JP3939519B2 (ja) * 2001-09-14 2007-07-04 アルプス電気株式会社 磁気検出素子及びその製造方法
TWI253478B (en) 2001-11-14 2006-04-21 Mitsubishi Heavy Ind Ltd Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus
US7659209B2 (en) 2001-11-14 2010-02-09 Canon Anelva Corporation Barrier metal film production method
FR2884916B1 (fr) * 2005-04-25 2007-06-22 Commissariat Energie Atomique Detecteur optique ultrasensible a grande resolution temporelle, utilisant un plasmon de surface
JP2008052840A (ja) * 2006-08-25 2008-03-06 Hitachi Global Storage Technologies Netherlands Bv 磁気ヘッドスライダの製造方法
JP4354519B2 (ja) * 2006-09-13 2009-10-28 キヤノンアネルバ株式会社 磁気抵抗効果素子の製造方法
US7863582B2 (en) * 2008-01-25 2011-01-04 Valery Godyak Ion-beam source
US8871645B2 (en) 2008-09-11 2014-10-28 Applied Materials, Inc. Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof
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US20110061810A1 (en) 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
JP5601181B2 (ja) * 2010-12-02 2014-10-08 富士通セミコンダクター株式会社 磁気抵抗効果素子及びその製造方法
US8970213B2 (en) 2011-06-24 2015-03-03 Canon Anelva Corporation Method for manufacturing magnetoresistance effect element
WO2013027406A1 (ja) 2011-08-25 2013-02-28 キヤノンアネルバ株式会社 磁気抵抗効果素子の製造方法及び磁気抵抗効果膜の加工方法
JP2013247198A (ja) * 2012-05-24 2013-12-09 Toshiba Corp 磁気抵抗素子及びその製造方法
JP5824189B2 (ja) 2013-09-25 2015-11-25 キヤノンアネルバ株式会社 磁気抵抗効果素子の製造システム

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Publication number Priority date Publication date Assignee Title
TW200717470A (en) * 2005-09-13 2007-05-01 Canon Anelva Corp Method and apparatus for manufacturing of magneto-resistance effect element
US8472149B2 (en) * 2007-10-01 2013-06-25 Tdk Corporation CPP type magneto-resistive effect device and magnetic disk system
JP2010186869A (ja) * 2009-02-12 2010-08-26 Toshiba Corp 磁気抵抗効果素子及びその製造方法
TW201203351A (en) * 2010-03-10 2012-01-16 Applied Materials Inc Apparatus and methods for cyclical oxidation and etching

Also Published As

Publication number Publication date
TW201526321A (zh) 2015-07-01
JP2016012738A (ja) 2016-01-21
US10157961B2 (en) 2018-12-18
JP5824189B2 (ja) 2015-11-25
US20160204342A1 (en) 2016-07-14
KR20160055187A (ko) 2016-05-17
JP6078610B2 (ja) 2017-02-08
US20170250221A1 (en) 2017-08-31
KR101862632B1 (ko) 2018-05-31
JPWO2015045205A1 (ja) 2017-03-09
WO2015045205A1 (ja) 2015-04-02

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