TWI556290B - 離子植入方法 - Google Patents

離子植入方法 Download PDF

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Publication number
TWI556290B
TWI556290B TW102149240A TW102149240A TWI556290B TW I556290 B TWI556290 B TW I556290B TW 102149240 A TW102149240 A TW 102149240A TW 102149240 A TW102149240 A TW 102149240A TW I556290 B TWI556290 B TW I556290B
Authority
TW
Taiwan
Prior art keywords
group
scum
composition
acid
photoresist
Prior art date
Application number
TW102149240A
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English (en)
Chinese (zh)
Other versions
TW201501183A (zh
Inventor
徐承柏
吳承翰
鄭東垣
山本芳裕
Original Assignee
羅門哈斯電子材料有限公司
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Publication date
Application filed by 羅門哈斯電子材料有限公司 filed Critical 羅門哈斯電子材料有限公司
Publication of TW201501183A publication Critical patent/TW201501183A/zh
Application granted granted Critical
Publication of TWI556290B publication Critical patent/TWI556290B/zh

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Classifications

    • H10P30/20—
    • H10P30/22—
    • H10P76/2041—
    • H10P14/683—
    • H10P70/23—
    • H10P76/204—
    • H10P95/08—

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
TW102149240A 2012-12-31 2013-12-31 離子植入方法 TWI556290B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201261748058P 2012-12-31 2012-12-31

Publications (2)

Publication Number Publication Date
TW201501183A TW201501183A (zh) 2015-01-01
TWI556290B true TWI556290B (zh) 2016-11-01

Family

ID=51017642

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102149240A TWI556290B (zh) 2012-12-31 2013-12-31 離子植入方法

Country Status (5)

Country Link
US (1) US9666436B2 (enExample)
JP (1) JP6448903B2 (enExample)
KR (1) KR102117296B1 (enExample)
CN (1) CN103943472B (enExample)
TW (1) TWI556290B (enExample)

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JP2014143415A (ja) 2012-12-31 2014-08-07 Rohm & Haas Electronic Materials Llc イオン注入法
JP6328931B2 (ja) 2012-12-31 2018-05-23 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ フォトレジストパターントリミング方法
US9263551B2 (en) * 2013-10-11 2016-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Simultaneous formation of source/drain openings with different profiles
CN104749888B (zh) 2013-12-30 2019-12-10 罗门哈斯电子材料有限公司 光致抗蚀剂图案修整组合物和方法
CN108604058A (zh) 2015-12-14 2018-09-28 Asml荷兰有限公司 隔膜组件
CN115202162A (zh) 2015-12-14 2022-10-18 Asml荷兰有限公司 用于制造隔膜组件的方法
US10056256B2 (en) * 2016-03-16 2018-08-21 Taiwan Semiconductor Manufacturing Co., Ltd. Method of priming photoresist before application of a shrink material in a lithography process
US10658180B1 (en) * 2018-11-01 2020-05-19 International Business Machines Corporation EUV pattern transfer with ion implantation and reduced impact of resist residue

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US20090236665A1 (en) * 2008-03-21 2009-09-24 Vanguard International Semiconductor Semiconductor device and fabrication method thereof
US7862982B2 (en) * 2008-06-12 2011-01-04 International Business Machines Corporation Chemical trim of photoresist lines by means of a tuned overcoat material
TW201137937A (en) * 2009-12-21 2011-11-01 Ibm Spin-on formulation and method for stripping an ion implanted photoresist

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JP3953822B2 (ja) 2002-01-25 2007-08-08 富士通株式会社 レジストパターン薄肉化材料、レジストパターン及びその製造方法、並びに、半導体装置及びその製造方法
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JP2009071049A (ja) * 2007-09-13 2009-04-02 Sanyo Electric Co Ltd 半導体基板への不純物注入方法
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JP4779028B2 (ja) 2009-02-27 2011-09-21 パナソニック株式会社 パターン形成方法
US8883407B2 (en) * 2009-06-12 2014-11-11 Rohm And Haas Electronic Materials Llc Coating compositions suitable for use with an overcoated photoresist
JP2011222834A (ja) * 2010-04-12 2011-11-04 Hoya Corp ベーク処理装置、レジストパターン形成方法、フォトマスクの製造方法、及び、ナノインプリント用モールドの製造方法
KR101675458B1 (ko) 2010-07-27 2016-11-14 삼성전자 주식회사 산 확산을 이용하는 반도체 소자의 제조 방법
JP5445430B2 (ja) * 2010-11-15 2014-03-19 信越化学工業株式会社 パターン形成方法
TWI510854B (zh) * 2011-12-31 2015-12-01 羅門哈斯電子材料有限公司 光阻劑圖案修整方法
JP2014143415A (ja) * 2012-12-31 2014-08-07 Rohm & Haas Electronic Materials Llc イオン注入法
JP6328931B2 (ja) 2012-12-31 2018-05-23 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ フォトレジストパターントリミング方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090236665A1 (en) * 2008-03-21 2009-09-24 Vanguard International Semiconductor Semiconductor device and fabrication method thereof
US7862982B2 (en) * 2008-06-12 2011-01-04 International Business Machines Corporation Chemical trim of photoresist lines by means of a tuned overcoat material
TW201137937A (en) * 2009-12-21 2011-11-01 Ibm Spin-on formulation and method for stripping an ion implanted photoresist

Also Published As

Publication number Publication date
KR20140088031A (ko) 2014-07-09
US20140187027A1 (en) 2014-07-03
TW201501183A (zh) 2015-01-01
JP2014170922A (ja) 2014-09-18
JP6448903B2 (ja) 2019-01-09
KR102117296B1 (ko) 2020-06-01
CN103943472B (zh) 2017-06-09
CN103943472A (zh) 2014-07-23
US9666436B2 (en) 2017-05-30

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