TWI554354B - 接合頭 - Google Patents

接合頭 Download PDF

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TWI554354B
TWI554354B TW102123001A TW102123001A TWI554354B TW I554354 B TWI554354 B TW I554354B TW 102123001 A TW102123001 A TW 102123001A TW 102123001 A TW102123001 A TW 102123001A TW I554354 B TWI554354 B TW I554354B
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tool
bonding
tool base
laser light
electronic component
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TW102123001A
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TW201400224A (zh
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田中榮次
安吉裕之
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澁谷工業股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/75252—Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the bonding head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301—Bonding head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/755—Cooling means
    • H01L2224/75502—Cooling means in the upper part of the bonding apparatus, e.g. in the bonding head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/757—Means for aligning
    • H01L2224/75702—Means for aligning in the upper part of the bonding apparatus, e.g. in the bonding head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/757—Means for aligning
    • H01L2224/75743—Suction holding means
    • H01L2224/75745—Suction holding means in the upper part of the bonding apparatus, e.g. in the bonding head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/758—Means for moving parts
    • H01L2224/75821—Upper part of the bonding apparatus, i.e. bonding head
    • H01L2224/75824—Translational mechanism
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/759—Means for monitoring the connection process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
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Description

接合頭
本發明係關於一種接合頭，更詳而言之，係關於一種具備設置於殼體且可由雷射光穿透的工具基座，並利用穿透過該工具基座的雷射光將電子零件加熱並接合於基板上的接合頭。
以往，關於該種類的接合頭，係利用穿透過工具基座的雷射光直接將電子零件加熱，已為人所習知(專利文獻1)。該接合頭，係使用於電子零件具有雷射光吸收性與耐久性的情況，電子零件直接被保持在工具基座的底面，並利用穿透過工具基座的雷射光加熱。
另外，以往，利用穿透過工具基座的雷射光將接合工具加熱，並透過該接合工具將吸附保持於其上的電子零件加熱的接合頭，亦已為人所習知(專利文獻2)。該接合頭，係使用於電子零件不具備雷射光吸收性與耐久性的情況，此時係將具有光吸收性的接合工具裝設於工具基座的底面，並在接合工具的底面保持電子零件。
上述專利文獻1、2的接合頭的工具基座均為石英所製造。石英具有透光性，不會因為雷射光而升溫，而且熱傳導係數很小，熱不易從雷射光所加熱的電子零件或是接合工具傳導過來，故其本身不易升溫。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本特開2009-182162號公報
[專利文獻2]日本特開2010-129890號公報
然而，若進行將電子零件接合於基板的接合處理，熱仍會從受到加熱的電子零件或接合工具傳導至工具基座，使溫度上升。
在將電子零件接合於基板之後，在拾起下一電子零件時，工具基座必須在既定溫度以下，然而如上所述的，構成工具基座的石英的熱傳導係數很小，故當其升溫後冷卻反而變得很花時間。尤其是在使用接合工具的接合頭中，即使將接合工具冷卻，隨之熱也會從工具基座回到接合工具，故欲縮短冷卻時間有其困難。
然後特別是在接著劑使用了熱硬化性樹脂的接合當中，在將電子零件拾起時，由於必須使工具基座的溫度下降到熱硬化性樹脂不會硬化的室溫附近，為了縮短接合裝置的產距，縮短冷卻時間為必須解決的技術問題。
有鑑於該等問題，本發明提供一種可更迅速地將工具基座冷卻的接合頭。
亦即，本發明係一種接合頭，其具備設置於殼體且可由雷射光穿透的工具基座，並利用穿透過該工具基座的雷射光將電子零件加熱並接合於基板上，其特徵為： 使散熱構件的表面接觸於該工具基座的該雷射光入射的表面上而設置，該散熱構件具有可由該雷射光穿透的透光性，同時具有比該工具基座的熱傳導係數更大的熱傳導係數。
如上所述的工具基座在將電子零件接合於基板時會受到加熱而溫度上升。然而在本發明中，由於使散熱構件接觸於工具基座的雷射光入射的表面上而設置，且該散熱構件具有比上述工具基座的熱傳導係數更大的熱傳 導係數，故從電子零件散逸到工具基座且原本將會在其當中累積的熱，會迅速地散逸到上述具有較大之熱傳導係數的散熱構件中。
因此可經常良好地防止工具基座升溫，故可達到使接合裝置的產距縮短之目的。
1‧‧‧接合裝置
2‧‧‧基板
3‧‧‧電子零件
4‧‧‧基板台
6‧‧‧接合頭
6A‧‧‧殼體
6B‧‧‧安裝構件
7‧‧‧升降加壓機構
8‧‧‧工具基座
9‧‧‧接合工具
11‧‧‧光纖
12‧‧‧雷射振盪器
13‧‧‧聚光透鏡
14‧‧‧反射鏡子
15‧‧‧散熱構件
16‧‧‧冷卻構件
21‧‧‧負壓供給機構
22‧‧‧工具吸附用負壓埠
23‧‧‧負壓供給機構
24‧‧‧晶片吸附用負壓埠
26‧‧‧連通孔
27‧‧‧連通孔
29‧‧‧連通溝
30‧‧‧工具吸附孔
31‧‧‧工具吸附孔
33‧‧‧連通溝
35‧‧‧晶片吸附孔
36‧‧‧晶片吸附孔
37‧‧‧凸塊
L‧‧‧雷射光
圖1係表示本發明的一個實施例的構造圖。
以下，根據圖式的實施例說明本發明，在圖1中，1為將電子零件3接合於基板2上的接合裝置，該接合裝置1具備支持上述基板2並在水平面內沿X-Y方向移動的基板台4。在上述基板台4的上方側配置接合頭6，該接合頭6可藉由升降加壓機構7上升或下降。
上述接合頭6具備形成筒狀的殼體6A，在該殼體6A的下端部透過環狀的安裝構件6B將工具基座8水平固定，如文後詳述的在該工具基座8的底面以隨意裝卸的方式吸附保持接合工具9，同時可在該接合工具9的底面以隨意裝卸的方式吸附保持上述電子零件3。
具有可撓性的光纖11的一端部以沿著水平方向的方式連接於上述殼體6A的側面上部，該光纖11的另一端與雷射振盪器12連接。
從上述雷射振盪器12所振盪發出的雷射光L，經由光纖11從上述一端部向殼體6A的中心水平照射，同時被聚光透鏡13聚集成所需要的大小。
然後向水平方向照射的雷射光L，被設置於殼體6A的內部上方中央部位的反射鏡子14反射而射向垂直下方，穿透過以堆疊密合的方式設置於工具基座8的上述雷射光L入射側的表面上且具有透光性的散熱構件15以及上述工具基座8，照射到接合工具9，進而將該接合工具9加熱。
上述散熱構件15具有比工具基座8的熱傳導係數更大的熱傳導係數， 在該散熱構件15的頂面，接觸於具有比該散熱構件15的熱傳導係數更大的熱傳導係數的冷卻構件16而設置。該冷卻構件16，以上述雷射光可通過其中心部的方式形成筒狀，因此配置在散熱構件15的周圍並與其頂面接觸。另外該散熱構件15的外周圍面與殼體6A的內周圍面密合。
在本實施例中將上述工具基座8的厚度設定成很薄，同時將上述散熱構件15的厚度設定成比工具基座8的厚度更厚。藉此便可儘量減少工具基座8所累積的熱量，另外即使將工具基座8的厚度設定成很薄亦可利用散熱構件15補強其強度。
上述工具基座8由例如強度高且熱傳導係數小的石英形成薄板狀。石英的熱傳導係數為1.5W/m‧K。上述散熱構件15由例如熱傳導係數較大的藍寶石形成薄板狀。藍寶石的熱傳導係數為40W/m‧K。另外冷卻構件16或殼體6A由鋁製造，鋁的熱傳導係數比藍寶石更大，為236W/m‧K。另外，接合工具9係由碳化矽製的薄片構件所構成，碳化矽的熱傳導係數為80W/m‧K。
上述散熱構件15的材料除了藍寶石之外，亦可使用具有雷射透光性，且熱傳導係數較大的鑽石或紅寶石。另外冷卻構件16或殼體6A除了鋁之外，亦可使用熱傳導係數較大的金屬材料。尤其宜在該冷卻構件16或殼體6A的內部，設置例如使冷卻水流通的冷卻通路，將冷卻構件16與殼體6A的至少其中任一方冷卻。
上述基板台4、雷射振盪器12以及升降加壓機構7的運作被圖中未顯示的控制裝置所控制，可利用該控制裝置使雷射振盪器12運作，使雷射光L照射接合工具9以將其加熱。
上述雷射振盪器12，可使用半導體雷射、YAG(yttrium aluminum garnet，釔鋁石榴石)雷射等的固體雷射，或是其他種類的雷射。
在上述殼體6A設置了與負壓供給機構21連接的工具吸附用負壓埠22，以及與負壓供給機構23連接的晶片吸附用負壓埠24，可利用從工具吸附用負壓埠22導入的負壓將接合工具9吸附保持於工具基座8的底面，並 利用從晶片吸附用負壓埠24導入的負壓將電子零件3吸附保持於接合工具9的底面。
上述工具吸附用負壓埠22，透過形成在冷卻構件16的半徑方向上的連通孔26、形成在上下方向上的連通孔27以及形成在冷卻構件16的底面上的連通溝29，與分別貫通散熱構件15與工具基座8二者所形成的工具吸附孔30、31連通。
該等工具吸附孔30、31形成於與接合工具9重疊的位置，因此藉由在工具吸附孔30、31中導入負壓，便可將接合工具9吸附保持於工具基座8的底面。
另一方面，上述晶片吸附用負壓埠24，透過形成在工具基座8的頂面上的水平方向的連通溝33，與分別貫通工具基座8與接合工具9二者所形成的晶片吸附孔35、36連通。
然後藉由在上述晶片吸附孔35、36中導入負壓，便可將電子零件3吸附保持於接合工具9的底面。
若一直對上述工具吸附用負壓埠22供給負壓，接合工具9便不會從上述工具基座8脫落，另一方面，則是在欲吸附保持電子零件3時才對晶片吸附用負壓埠24供給負壓。
在以上的構造中，在將電子零件3吸附保持於接合工具9的底面的狀態下，當雷射光L穿透過散熱構件15以及工具基座8照射到接合工具9時，該接合工具9會被雷射光L加熱，電子零件3以及配置於其底面的複數個位置上的凸塊37也會被加熱。
控制裝置，使基板台4運作，在將保持於接合工具9的電子零件3與基板2二者的位置對準的狀態下，上述升降加壓機構7使接合頭6開始下降。令接合頭6下降到既定的高度，在使電子零件與基板抵接並施加了所需要的接合負載的狀態下，從雷射盪器12振盪發出雷射光L照射接合工具9，被吸附保持於接合工具9上的電子零件3，一邊受到加熱一邊被推向基板2，而接合於該基板2上。
像這樣接合作業結束之後，根據控制裝置的指令停止晶片吸附孔35、 36的吸引，接合工具9對電子零件3的保持狀態被解除，之後，升降加壓機構7使接合頭6上升，進入到下一輪的接合動作。
當上述接合工具9被雷射光L加熱時，熱雖然會從受到加熱的接合工具9散逸到與其接觸的工具基座8，然而由於工具基座8的熱傳導係數設定成很小，故可抑制熱量從接合工具9散逸到工具基座8。因而藉此，便可使接合工具9迅速地升高到所需要的溫度。
另外在進行接合作業時，由於熱仍會從接合工具9傳導至工具基座8，故工具基座8的溫度仍會因此上升。然而由於工具基座8與具有比該工具基座8的熱傳導係數更大的熱傳導係數的散熱構件15接觸，故本來將會累積在工具基座8的熱會迅速地散逸到散熱構件15。藉此，便可經常將工具基座8的溫度保持在低溫。
然後散逸到散熱構件15的熱，會進一步經由冷卻構件16或殼體6A散逸到外部去。
在對上述接合工具9照射雷射光L結束時，雖然該接合工具9會開始冷卻，然而在此時，熱會從之前因為從接合工具9散逸到工具基座8的熱而升溫的工具基座8再回到接合工具9。
但是如上所述的，由於散逸到工具基座8的熱會散逸到散熱構件15側，故比起以往的情況而言，更可大幅地減少從工具基座8回到接合工具9的熱量。
因而藉此，便可使接合工具9迅速地冷卻。如是根據本實施例，由於比起以往的情況而言，可更進一步提高接合工具9的冷卻效率，故可達到使接合裝置1的產距縮短之目的。
另外，在上述實施例中，係利用雷射光L將接合工具9加熱，並利用該受到加熱的接合工具9將電子零件3加熱，惟亦可省略接合工具9而將電子零件3吸附保持於工具基座8，並利用雷射光L直接將該電子零件3加熱。
此時，只要停止從上述工具吸附用負壓埠22對工具吸附孔30、31導 入負壓，使吸附保持於工具基座8的底面的接合工具9脫離，同時從晶片吸附用負壓埠24對晶片吸附孔35導入負壓，利用該晶片吸附孔35直接將電子零件3吸附保持於工具基座8的底面即可。亦即此時，工具基座8被當作接合工具9使用。
像這樣，上述實施例的接合裝置1，可利用穿透過工具基座8的雷射光L隔著接合工具9將電子零件3加熱，或是將吸附保持於工具基座8的電子零件3直接加熱，而分別構成專用的機構，自不待言。
1‧‧‧接合裝置
2‧‧‧基板
3‧‧‧電子零件
4‧‧‧基板台
6‧‧‧接合頭
6A‧‧‧殼體
6B‧‧‧安裝構件
7‧‧‧升降加壓機構
8‧‧‧工具基座
9‧‧‧接合工具
11‧‧‧光纖
12‧‧‧雷射振盪器
13‧‧‧聚光透鏡
14‧‧‧反射鏡子
15‧‧‧散熱構件
16‧‧‧冷卻構件
21‧‧‧負壓供給機構
22‧‧‧工具吸附用負壓埠
23‧‧‧負壓供給機構
24‧‧‧晶片吸附用負壓埠
26‧‧‧連通孔
27‧‧‧連通孔
29‧‧‧連通溝
30‧‧‧工具吸附孔
31‧‧‧工具吸附孔
33‧‧‧連通溝
35‧‧‧晶片吸附孔
36‧‧‧晶片吸附孔
37‧‧‧凸塊
L‧‧‧雷射光

Claims (4)

  1. 一種接合頭，其具備設置於殼體且可由雷射光穿透的工具基座，並利用穿透過該工具基座的雷射光將電子零件加熱並接合於基板上，其特徵為：使散熱構件的表面接觸於該工具基座的該雷射光入射的表面上而設置，該散熱構件具有可由該雷射光穿透的透光性，同時具有比該工具基座的熱傳導係數更大的熱傳導係數。
  2. 如申請專利範圍第1項之接合頭，其中，該散熱構件的厚度設定成比該工具基座的厚度更大。
  3. 如申請專利範圍第1或2項之接合頭，其中，使具有比該散熱構件的熱傳導係數更大的熱傳導係數的冷卻構件接觸於該散熱構件上而設置，該冷卻構件以該雷射光可通過其中心部的方式配置於該散熱構件的周圍。
  4. 如申請專利範圍第1或2項之接合頭，其中，在該工具基座與該電子零件之間配置接合工具，該接合工具分別與該工具基座以及該電子零件接觸，穿透過該工具基座的雷射光將接合工具加熱，而受到加熱的接合工具將該電子零件加熱。
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