TWI550082B - Preparation method of cleaning liquid and wiring for lithography process - Google Patents
Preparation method of cleaning liquid and wiring for lithography process Download PDFInfo
- Publication number
- TWI550082B TWI550082B TW100103442A TW100103442A TWI550082B TW I550082 B TWI550082 B TW I550082B TW 100103442 A TW100103442 A TW 100103442A TW 100103442 A TW100103442 A TW 100103442A TW I550082 B TWI550082 B TW I550082B
- Authority
- TW
- Taiwan
- Prior art keywords
- mass
- cleaning solution
- solvent
- water
- resist film
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 89
- 238000004140 cleaning Methods 0.000 title claims description 63
- 238000001459 lithography Methods 0.000 title claims description 43
- 239000007788 liquid Substances 0.000 title description 9
- 238000002360 preparation method Methods 0.000 title 1
- 238000005530 etching Methods 0.000 claims description 25
- 150000001875 compounds Chemical class 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 239000002904 solvent Substances 0.000 claims description 19
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 16
- 239000003960 organic solvent Substances 0.000 claims description 16
- 239000002798 polar solvent Substances 0.000 claims description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- -1 guanamines Chemical class 0.000 claims description 14
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 11
- 239000000908 ammonium hydroxide Substances 0.000 claims description 11
- 125000004432 carbon atom Chemical group C* 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 10
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 9
- 150000007529 inorganic bases Chemical class 0.000 claims description 8
- 229920005862 polyol Polymers 0.000 claims description 8
- 150000003077 polyols Chemical class 0.000 claims description 8
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- 125000002768 hydroxyalkyl group Chemical group 0.000 claims description 7
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- 230000015572 biosynthetic process Effects 0.000 claims description 3
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- IHWDSEPNZDYMNF-UHFFFAOYSA-N 1H-indol-2-amine Chemical class C1=CC=C2NC(N)=CC2=C1 IHWDSEPNZDYMNF-UHFFFAOYSA-N 0.000 claims 1
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- 239000010410 layer Substances 0.000 description 52
- 239000000463 material Substances 0.000 description 52
- 238000005260 corrosion Methods 0.000 description 21
- 230000007797 corrosion Effects 0.000 description 20
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
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- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 10
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 10
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- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
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- 238000004380 ashing Methods 0.000 description 3
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- 229910052782 aluminium Inorganic materials 0.000 description 2
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- 230000005764 inhibitory process Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- PJUIMOJAAPLTRJ-UHFFFAOYSA-N monothioglycerol Chemical compound OCC(O)CS PJUIMOJAAPLTRJ-UHFFFAOYSA-N 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 2
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- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- QVOFCQBZXGLNAA-UHFFFAOYSA-M tributyl(methyl)azanium;hydroxide Chemical compound [OH-].CCCC[N+](C)(CCCC)CCCC QVOFCQBZXGLNAA-UHFFFAOYSA-M 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- ZMANZCXQSJIPKH-UHFFFAOYSA-O triethylammonium ion Chemical compound CC[NH+](CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-O 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical group [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- PAPBSGBWRJIAAV-UHFFFAOYSA-N ε-Caprolactone Chemical compound O=C1CCCCCO1 PAPBSGBWRJIAAV-UHFFFAOYSA-N 0.000 description 1
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Description
本發明係關於微影製程用洗淨液,更詳而言之,為有關於不腐蝕低介電質材料等易腐蝕性材料,可有效地將抗蝕膜及下層反射防止膜除去之微影製程用洗淨液。進一步,本發明係關於使用上述微影製程用洗淨液之配線形成方法。
半導體裝置為將金屬配線層、低介電質層、絕緣層等層合於矽晶圓等基板上所形成者,如此般的半導體裝置,為將抗蝕圖型作為遮罩,藉由施以蝕刻處理之微影製程法,將上述各層加工所製造。
在上述微影製程法中所使用的抗蝕膜、暫時性地層合膜(亦稱為犧牲膜(sacrificial film)),進一步在蝕刻步驟中所生成的金屬配線層或來自於低介電質層之殘渣物,為了不對半導體裝置造成影響,或為了不妨礙到接下來的步驟,使用洗淨液予以除去。
又,近年,伴隨半導體裝置之高密度化、高積體化,使用鑲嵌法之配線形成方法已被採用著。在如此般的配線形成方法中,作為構成半導體裝置之金屬配線層之金屬配線材料為採用易產生腐蝕的銅,更,對於構成低介電質層之低介電質材料(亦稱為ILD材料),亦朝向越來越低介電常數化進展,而成為採用易產生腐蝕之ILD材料。因此,正要求著在基板洗淨時,對於此等易腐蝕性材料不會產生腐蝕之洗淨液之開發。
又,在使用鑲嵌法之配線形成方法中,利用來作為蝕刻處理時之犧牲膜之材料與ILD材料之構成酷似,對於如此般酷似之材料之一方(ILD材料),使其不產生腐蝕地殘留於裝置上,而能效率良好地將另一方(犧牲膜)除去之洗淨液,正被要求開發著。
進一步,在以往的鋁配線之形成方法中,經由氧電漿灰化處理步驟後,因為會以藥液進行洗淨處理,故對於洗淨液並未要求如此高的洗淨能力,但在具有ILD材料等易腐蝕性材料之基板之洗淨中,無法使用如此般的氧電漿灰化處理。因此,即便未經由如此般的氧電漿灰化處理步驟,亦具有能將前述各種殘渣物完全除去之高洗淨能力之洗淨液,正被要求開發著。
以往,作為在如此般的半導體裝置製造步驟中所使用之微影製程用洗淨液,已有提案含有4級氫氧化銨、水溶性有機溶劑、水及防蝕劑之洗淨液(例如參考專利文獻1、2)。如此的微影製程用洗淨液,相較於其之前的洗淨液,對於各種殘渣物之除去性能大幅改善,為對於易腐蝕性材料之抑制腐蝕機能為優異者。
又,亦有提案含有4級氫氧化銨、水溶性有機溶劑、水及防蝕劑,更相對於總量添加有1質量%以下之氫氧化鉀之微影製程用洗淨液(參考專利文獻3)。如此般添加有氫氧化鉀之微影製程用洗淨液,不會將ILD材料等易腐蝕性材料腐蝕,並可確保更高水準之除去性能。
[專利文獻1]特開2002-357908號公報
[專利文獻2]特開2004-103771號公報
[專利文獻3]特表2006-527783號公報
然而,在例如以抗蝕圖型作為遮罩對於低介電質層施以蝕刻處理時,在抗蝕膜之下層會形成有下層反射防止膜(BARC)。此情形時,為不妨礙到接下來的步驟,抗蝕膜及下層反射防止膜有必要在蝕刻步驟後使用洗淨液予以除去。但,除了難以將因蝕刻而變質的抗蝕膜或高交聯密度之下層反射防止膜予以除去外,另一方面,構成低介電質層之ILD材料為容易產生腐蝕者。因此,在上述各專利文獻中所記載的微影製程用洗淨液,難以一邊抑制ILD材料之腐蝕,一邊有效地將抗蝕膜及下層反射防止膜除去。
本發明有鑑於如此般以往之實情,目的為提供對於ILD材料之抑制腐蝕機能優異,且抗蝕膜及下層反射防止膜之除去性能亦優異之微影製程用洗淨液,以及使用此微影製程用洗淨液之配線形成方法。
本發明團隊為解決上述課題不斷地深入進行研究。其結果發現,藉由使微影製程用洗淨液中所含的水溶性有機溶劑以特定之組成時可解決上述課題,遂而完成本發明。本發明具體為提供如以下者。
本發明之第一樣態為一種微影製程用洗淨液,其係含有4級氫氧化銨、水溶性有機溶劑、水、無機鹼;上述水溶性有機溶劑為含有偶極矩為3.0D以上之高極性溶劑、乙二醇醚系溶劑、多元醇;上述高極性溶劑與上述乙二醇醚系溶劑之合計含有量,相對於總量為30質量%以上。
本發明之第二樣態為一種配線形成方法,其係在藉由將金屬埋入於使用抗蝕膜在半導體多層層合體之介電質層所形成之蝕刻空間以形成金屬配線層之配線形成方法中,在上述蝕刻空間形成後,使用本發明相關之微影製程用洗淨液至少將上述抗蝕膜除去。
依照本發明,可提供一對於ILD材料之抑制腐蝕機能為優異,且抗蝕膜及下層反射防止膜之除去性能亦優異之微影製程用洗淨液,以及使用此微影製程用洗淨液之配線形成方法。
<微影製程用洗淨液>
本發明相關之微影製程用洗淨液,係含有4級氫氧化銨、水溶性有機溶劑、水、無機鹼。以下,將本發明予以詳細地說明,惟,對於各材料而言只要是無特別之要求可使用市售者。
作為4級氫氧化銨,較佳為下述一般式(1)所示之化合物。
【化1】
上述一般式(1)中,R1~R4分別獨立示為碳數1~4之烷基或羥烷基。
上述一般式(1)所示之化合物中,又以由四甲基氫氧化銨、四乙基氫氧化銨、四丙基氫氧化銨、四丁基氫氧化銨、甲基三丙基氫氧化銨、甲基三丁基氫氧化銨、及(2-羥基乙基)三甲基氫氧化銨所成群所選出之至少1種,特別就容易取得這方面而言為宜。更,四甲基氫氧化銨及/或四乙基氫氧化銨,就對於犧牲膜之溶解性為高這方面為宜。
4級氫氧化銨之含有量,相對於微影製程用洗淨液總量,較佳為5~15質量%、更佳為5~10質量%。藉由成為如此的含有量,可一邊抑制ILD材料等之腐蝕,一邊將抗蝕膜、下層反射防止膜、犧牲膜,進而是在蝕刻步驟中所生成來自於金屬配線層或低介電質層之殘渣物予以有效地除去。
本發明相關之微影製程用洗淨液,作為水溶性有機溶劑,為含有偶極矩為3.0D以上之高極性溶劑、乙二醇醚系溶劑、多元醇。
作為偶極矩為3.0D以上之高極性溶劑,較佳為由二甲基亞碸(DMSO)(偶極矩:4.6D)等之亞碸類;二甲基碸(偶極矩:5.1D)、二乙基碸(偶極矩:4.7D)、四亞甲碸(偶極矩:5.0D)等之碸類;N,N-二甲基甲醯胺(DMF)(偶極矩:4.5D)、N-甲基甲醯胺(偶極矩:4.6D)、N,N-二甲基乙醯胺(DMAc)(偶極矩:4.6D)、N-甲基乙醯胺(偶極矩:4.3D)、N,N-二乙基乙醯胺(偶極矩:4.7D)等之醯胺類;N-甲基-2-吡咯啶酮(NMP)(偶極矩:4.6D)、N-乙基-2-吡咯啶酮(偶極矩:4.7D)、N-羥基甲基-2-吡咯啶酮(偶極矩:3.1D)、N-羥基乙基-2-吡咯啶酮(偶極矩:6.1D)等之內醯胺類;β-丙內酯(偶極矩:4.6D)、γ-丁內酯(BGL)(偶極矩:5.1D)、γ-戊內酯(偶極矩:5.3D)、δ-戊內酯(偶極矩:5.4D)、γ-己內酯(偶極矩:5.2D)、ε-己內酯(偶極矩:5.5D)等之內酯類;1,3-二甲基-2-咪唑啶酮(DMI)(偶極矩:4.5D)、1,3-二乙基-2-咪唑啶酮(偶極矩:4.5D)、1,3-二異丙基-2-咪唑啶酮(偶極矩:4.3D)等之咪唑啶酮類之中所選出之1種以上。
此等之中又以偶極矩為3.5~7.0D之高極性溶劑為宜,更宜為偶極矩為4.0~6.0D之高極性溶劑。特別就在鹼性藥液中之安定性等之觀點而言,較佳為二甲基亞碸(偶極矩:4.6D)及N-甲基-2-吡咯啶酮(偶極矩:4.6D)。
作為乙二醇醚系溶劑,可舉例如乙二醇單甲基醚、乙二醇單乙基醚、乙二醇單丙基醚、乙二醇單丁基醚、丙二醇單甲基醚(PGME)、丙二醇單乙基醚、丙二醇單丙基醚、丙二醇單丁基醚、二乙二醇單甲基醚(MDG)、二乙二醇單乙基醚(EDG)、二乙二醇單丙基醚、二乙二醇單丁基醚(BDG)等。
此等之中又以水溶性、抗蝕膜之除去性能、著火性等之觀點而言,較佳為二乙二醇單甲基醚(MDG)、二乙二醇單乙基醚(EDG)、二乙二醇單丙基醚及二乙二醇單丁基醚(BDG)。
作為多元醇,可舉例如乙二醇、丙二醇、丁二醇、甘油等。此等之中又以安全性、黏度等之觀點而言,較佳為丙二醇。
水溶性有機溶劑之含有量,相對於微影製程用洗淨液總量,較佳為35~80質量%、更佳為45~70質量%。
又,上述高極性溶劑之含有量,相對於微影製程用洗淨液總量,較佳為5~60質量%、更佳為10~50質量%、又更佳為20~30質量%。藉由使高極性溶劑之含有量為5質量%以上時,可使下層反射防止膜之除去性能提升。
上述乙二醇醚系溶劑之含有量,相對於微影製程用洗淨液總量,較佳為5~55質量%、更佳為10~30質量%、又更佳為10~20質量%。藉由使乙二醇醚系溶劑之含有量為5質量%以上時,可使抗蝕膜之除去性能提升。
上述多元醇之含有量,相對於微影製程用洗淨液總量,較佳為5~30質量%、更佳為10~25質量%、又更佳為15~25質量%。藉由使多元醇之含有量為5質量%以上時,可使對於ILD材料之抑制腐蝕機能提升。
特別是,在本發明相關之微影製程用洗淨液中,上述高極性溶劑與上述乙二醇醚系溶劑之合計含有量,相對於微影製程用洗淨液總量為30質量%以上、較佳為40質量%以上。
藉由使水溶性有機溶劑成為如前述之組成時,可一邊抑制ILD材料等之腐蝕一邊將抗蝕膜及下層反射防止膜有效地除去。
水之含有量,相對於微影製程用洗淨液總量,較佳為15~35質量%、更佳為25~32質量%。藉由使成為如此之含有量,可一邊抑制ILD材料等之腐蝕,一邊將抗蝕膜、下層反射防止膜、犧牲膜,進而是在蝕刻步驟中所生成來自於金屬配線層或低介電質層之殘渣物予以有效地除去。
作為無機鹼,較佳為氫氧化鉀、氫氧化鈉、氫氧化銣等之鹼金屬之氫氧化物,更佳為氫氧化鉀。無機鹼之含有量,相對於微影製程用洗淨液總量,較佳為0.1質量ppm~1質量%、更佳為1質量ppm~0.5質量%。藉由使成為如此的含有量,可一邊抑制ILD材料等之腐蝕,一邊提高對於犧牲膜之除去性能。
本發明相關之微影製程用洗淨液,可進一步含有由苯并三唑系化合物及含有巰基之化合物之中所選出之至少1種的防蝕劑。
作為上述苯并三唑系化合物,可舉例如下述一般式(2)所示之化合物。
【化2】
上述一般式(2)中,R5、R6分別獨立示為氫原子、亦可具有取代基之碳數1~10之烴基、羧基、胺基、羥基、氰基、甲醯基、磺醯基烷基、或磺基,Q示為氫原子、羥基、亦可具有取代基之碳數1~14之烴基(惟,該烴基亦可被醯胺鍵或酯鍵所中斷)、或下述一般式(3)所示之基。
【化3】
上述一般式(3)中,R7示為碳數1~6之伸烷基,R8、R9分別獨立示為氫原子、羥基、或碳數1~6之羥烷基或烷氧基烷基。
尚,在上述一般式(2)中,R5、R6、Q之各定義中,烴基可為芳香族烴基及脂肪族烴基之任一者,亦可具有不飽和鍵,亦可為直鏈狀、分支鏈狀及環狀之任一者。作為芳香族烴基,可舉例如苯基、p-甲苯基等。作為直鏈狀的脂肪族烴基,可舉例如甲基、n-丙基、乙烯基等。作為分支鏈狀的脂肪族烴基,可舉例如異丁基、tert-丁基等。作為環狀的脂肪族烴基,可舉例如環戊基、環己基等。作為具有取代基之烴基,可舉例如羥烷基、烷氧基烷基等。
又,在上述一般式(2)中,作為Q,較佳為上述一般式(3)所示之基。特別在上述一般式(3)所示之基當中,較佳為R3、R9分別獨立地選擇碳數為1~6之羥烷基或烷氧基烷基之基。
更,Q較佳為選擇在上述一般式(2)所示之化合物為顯示出水溶性者。具體較佳為氫原子、碳數1~3之烷基(即,甲基、乙基、丙基、異丙基)、碳數1~3之羥烷基、羥基等。
作為苯并三唑系化合物,具體可舉例如苯并三唑、5,6-二甲基苯并三唑、1-羥基苯并三唑、1-甲基苯并三唑、1-胺基苯并三唑、1-苯基苯并三唑、1-羥基甲基苯并三唑、1-苯并三唑羧酸甲酯、5-苯并三唑羧酸、1-甲氧基-苯并三唑、1-(2,2-二羥基乙基)-苯并三唑、1-(2,3-二羥基丙基)苯并三唑;「IRGAMET」系列由CIBASPECIALTY CHEMICALS公司市售,2,2’-{[(4-甲基-1H-苯并三唑-1-基)甲基]亞胺基}雙乙醇、2,2’-{[(5-甲基-1H-苯并三唑-1-基)甲基]亞胺基}雙乙醇、2,2’-{[(4-甲基-1H-苯并三唑-1-基)甲基]亞胺基}雙乙烷、2,2’-{[(4-甲基-1H-苯并三唑-1-基)甲基]亞胺基}雙丙烷等。此等之中又以使用1-(2,3-二羥基丙基)-苯并三唑、2,2’-{[(4-甲基-1H-苯并三唑-1-基)甲基]亞胺基}雙乙醇、2,2’-{[(5-甲基-1H-苯并三唑-1-基)甲基]亞胺基}雙乙醇等為佳。此等之苯并三唑化合物可單獨使用,或組合2種以上使用。
作為上述含有巰基之化合物,較佳為與巰基鍵結之碳原子之α位、β位之至少一方,為具有羥基及/或羧基之化合物。作為如此的化合物,具體可舉例如1-硫甘油、3-(2-胺基苯硫基)-2-羥基丙基硫醇、3-(2-羥基乙硫基)-2-羥基丙基硫醇、2-巰基丙酸、3-巰基丙酸等。此等之中又以使用1-硫甘油為特佳。
本發明相關之微影製程用洗淨液,視所需亦可含有界面活性劑。作為如此的界面活性劑,較佳可使用炔醇系界面活性劑等。界面活性劑之含有量,相對於微影製程用洗淨液總量,較佳為未滿0.5質量%。
<配線形成方法>
本發明相關之配線形成方法,在藉由將金屬埋入於使用抗蝕膜在半導體多層層合體之介電質層中所形成之蝕刻空間以形成金屬配線層之使用鑲嵌法之配線形成方法中,於上述蝕刻空間形成後,使用本發明相關之微影製程用洗淨液至少將上述抗蝕膜除去者。
使用鑲嵌法之配線形成方法,更具體為將在半導體多層層合體之低介電質層上所形成之抗蝕圖型作為遮罩,將上述低介電質層進行蝕刻處理而形成蝕刻空間,藉由將金屬埋入於此蝕刻空間中以形成金屬配線者。尚,在抗蝕膜之下層有時會形成下層反射防止膜(BARC)。又,於蝕刻空間中有時會暫時性地理入犧牲膜。
本發明相關之微影製程用洗淨液,為將上述蝕刻處理後之至少抗蝕膜,進而是將來自於於蝕刻步驟中所生成的金屬配線層或低介電質層之殘渣物予以除去之際所使用。特別是,因本發明相關之微影製程用洗淨液可一邊抑制ILD材料之腐蝕,一邊有效地將抗蝕膜及下層反射防止膜除去,適合在使用抗蝕膜及下層反射防止膜於低介電質層形成蝕刻空間後,將至少抗蝕膜及下層反射防止膜予以除去之際使用。
抗蝕膜、下層反射防止膜等之除去方法,只要是通常所進行之除去方法即可,並無特別之限定。具體例如使用浸漬法、攪漿法、淋洗法等,為藉由使本發明相關之微影製程用洗淨液以1~40分鐘接觸於基板來處理。為了提高除去效果,通常是以室溫,亦可使微影製程用洗淨液昇溫至85℃左右來進行除去處理。
在此,作為形成上述抗蝕膜之材料,可將在(KrF、ArF、F2、EUV)準分子雷射、或電子線用所慣用之抗蝕材料依常法予以使用。
又,作為形成上述下層反射防止膜之材料,可將所慣用之無機系或有機系下層反射防止膜材料依常法予以使用。
使用如此般慣用的抗蝕材料、下層反射防止膜材料,在層間絕緣層或該上層之障壁層上形成有抗蝕膜、下層反射防止膜,介由遮罩之圖型曝光後,予以顯影處理而形成抗蝕圖型。接著,將此抗蝕圖型作為遮罩予以蝕刻後之抗蝕圖型殘渣物,與其他來自於下層反射防止膜、來自於犧牲膜、來自於在蝕刻步驟中所生成的金屬配線層或低介電質層之殘渣物,同時利用本發明相關之微影製程用洗淨液予以除去。
作為上述低介電質層,具體為藉由例如碳掺雜氧化物(SiOC)系、甲基矽倍半氧烷(MSQ)系、Hydrogen Silsesquioxane(HSQ)系之材料所形成之層。為了不使金屬配線層之電氣特性受到影響,較佳為介電常數(k)為3.0以下之低介電質層。
此等之低介電質層,可形成於上述金屬配線層上,亦可形成於金屬配線層上為形成有障壁層之上方。低介電質層之鍛燒溫度,通常為以350℃以上之高溫來進行。
形成如此的低介電質層材料,即,作為低介電質材料(ILD材料),具體可舉例如上述碳掺雜氧化物系之黑金剛石(商品名:Apllied Materials公司製)、珊瑚(商品名:Novelus Systems公司製)、Aurora(商品名:日本ASM公司製)、上述甲基矽倍半氧烷系之OCL T-31、OCL T-37、OCL T-39(均為商品名:東京應化工業製)、Hydrogen Silsesquioxane系之OCD T-12、OCL T-32(均為商品名:東京應化工業公司製)等。
又,作為上述障壁層,可舉例如SiC、SiN、SiCN、Ta、TaN等。如此的障壁層,亦可形成於低介電質層與低介電質層之間。
又,作為形成在鑲嵌法所使用之金屬配線層之金屬材料,雖主要為Cu,但Cu以外之Al、Ti、W等導電體材料亦被層合於同一基板上。只要是藉由本發明相關之微影製程用洗淨液,即使洗淨液與此等金屬材料有接觸之情形,亦可有效地抑制腐蝕。
本發明相關之微影製程用洗淨液,在鑲嵌法當中,特別又以藉由在已形成的蝕刻空間內暫時性地設置犧牲膜之鑲嵌法之配線形成方法為有用者;作為形成如此的犧牲膜之材料(埋入材),具體以藉由縮合反應所得到的旋塗式玻璃法(SOG)材料為合適。
作為形成上述犧牲膜之旋塗式玻璃法材料,將由下述一般式(4)~(6)所示之化合物所選出之至少1種化合物在水的存在下藉由酸的作用使水解之化合物為合適。
【化4】
上述一般式(4)~(6)中,R10~R13、R15~R17、R20、R21分別獨立示為碳數1~4之烷基或苯基,R14、R18、R19示為氫原子或碳數1~4之烷基。
上述一般式(4)所示之化合物之中,又較佳以四甲氧矽烷或四乙氧矽烷、或此等之寡聚物。又,上述一般式(5)所示之化合物之中,又較佳以三甲氧矽烷或三乙氧矽烷、或此等之寡聚物。更,上述一般式(6)所示之化合物之中,又較佳以二甲氧矽烷、二乙氧矽烷、或甲基二甲氧矽烷、或此等之寡聚物。尚,此等之旋塗式玻璃法材料,可適當選擇1種或2種以上予以使用。
更,在上述一般式(4)~(6)所示之化合物中,亦可適當調合高吸收性物質。作為如此的高吸收性物質,該構造中為具有能與上述旋塗式玻璃法材料縮合之取代基,相對於上述抗蝕材料中感光性成分之感光特性波長區域之光具有高吸收能,只要是能阻礙因來自於基板之反射光所產生的駐波或因基板表面之斷差之亂反射者即可,無特別之限制。可舉例如羥基及/或羧基所取代之碸系化合物、二苯基酮系化合物、蒽系化合物、萘系化合物等。特別以至少具有2個羥基之雙苯碸系化合物及二苯基酮系化合物、至少具有1個羥基及/或羥烷基之蒽系化合物、具有羧基及/或羥基之蒽系化合物、以至少具有1個羧基及/或羥基所取代之萘系化合物為宜。
上述高吸收性物質之含有量,以旋塗式玻璃法材料中SiO2換算之固形分濃度,較佳為10~50重量%、更佳為15~40重量%。
以下為表示本發明之實施例,對於本發明更予以詳細地說明,但本發明並不限定於下述實施例。
(微影製程用洗淨液之調製)
依據下述表1、2所示組成及調合量,調製微影製程用洗淨液。尚,對於各試藥,若無特別之記載,為使用一般所市售之試藥。又,表中之數值,若無特別之告知,以質量%之單位所示。
上述表1、2中之簡稱如同下述。
TMAH:四甲基氫氧化銨
TEAH:四乙基氫氧化銨
DMSO:二甲基亞碸
NMP:N-甲基-2-吡咯啶酮
DMF:N,N-二甲基甲醯胺
GBL:γ-丁內酯
EDG:二乙二醇單乙基醚
MDG:二乙二醇單甲基醚
BDG:二乙二醇單丁基醚
PG:丙二醇
EG:乙二醇
(抗蝕膜之剝離性)
於20cm矽晶圓上塗佈ArF抗蝕材料「TArF-P6111」(東京應化工業公司製),以90℃、90秒及180℃、90秒進行加熱,形成膜厚350nm之抗蝕膜。將已形成抗蝕膜之晶圓在以表1、2所示之微影製程用洗淨液中,進行25℃、5分鐘之浸漬處理後,以純水進行淋洗處理。將此時的抗蝕膜之剝離狀態,以測定膜厚來進行評價。結果如表3所示。
(下層反射防止膜之剝離性)
於20cm矽晶圓,塗佈有機系下層反射防止膜材料「ARC-160」(日產化學工業公司製),以90℃、90秒及205℃、60秒進行加熱,形成膜厚90nm之下層反射防止膜。將已形成下層反射防止膜之晶圓在以表1、2所示之微影製程用洗淨液中,進行25℃、5分鐘之浸漬處理後,以純水進行淋洗處理。將此時的下層反射防止膜之剝離狀態,以測定膜厚來進行評價。結果如表3所示。
(埋入材剝離性)
將已成膜有由旋塗式玻璃法材料所構成之埋入材(Honeywell公司製)之基板,在以表1、2所示之微影製程用洗淨液中,進行50℃、1分鐘之浸漬處理後,以純水進行淋洗處理。將此時的埋入材之剝離狀態,以測定膜厚來進行評價。結果如表3所示。
(抑制Low-k材之腐蝕)
在已形成低介電質層(介電質為以2.7~2.8之介電常數進行CVD蒸鍍)之基板上,將藉由微影製程法所形成的溝槽抗蝕圖型作為遮罩,將低介電質層進行乾式蝕刻,形成溝槽圖型。將此基板在以表1、2所示之微影製程用洗淨液中,進行50℃、10分鐘之浸漬處理後,以純水進行淋洗處理。將此時的Low-k材之腐蝕狀態,藉由SEM(掃描型電子顯微鏡)進行觀察予以評價。結果如表3所示。
表3中,各評價結果之「◎」及「○」示為良好的剝離性或可看見抑制腐蝕,之中的「◎」特別示為良好的剝離性或可看見抑制腐蝕者。另一方面,「×」示為剝離性或抑制腐蝕不足者。
由表3可得知,使用含有作為水溶性有機溶劑之偶極矩為3.0D以上之高極性溶劑、乙二醇醚系溶劑、及多元醇之全數,且上述高極性溶劑及乙二醇醚系溶劑之合計含有量,相對於總量為30質量%以上之微影製程用洗淨液時,可一邊抑制ILD材料之腐蝕,一邊有效地將抗蝕膜及下層反射防止膜除去(實施例1~13)。
另一方面,未含有上述高極性溶劑、乙二醇醚系溶劑、多元醇之至少1種時,ILD材料之抑制腐蝕機能、或抗蝕膜或下層反射防止膜之除去效果差(比較例1~6)。又,作為水溶性有機溶劑,即使是含有上述高極性溶劑、乙二醇醚系溶劑及多元醇之全數,若上述高極性溶劑及乙二醇醚系溶劑之合計含有量少時,抗蝕膜及下層反射防止膜之除去效果差(比較例7)。
Claims (7)
- 一種微影製程用洗淨液,其係含有4級氫氧化銨、水溶性有機溶劑、水、無機鹼;前述水溶性有機溶劑為含有偶極矩為3.0D以上之高極性溶劑、乙二醇醚系溶劑、多元醇;前述高極性溶劑與上述乙二醇醚系溶劑之合計含有量,相對於總量為30質量%以上,前述4級氫氧化銨之含有量,相對於總量為超過5質量%~15質量%。
- 如申請專利範圍第1項之微影製程用洗淨液,其中,前述高極性溶劑係由亞碸類、碸類、醯胺類、內醯胺類、內酯類、及咪唑啶酮類之中所選出之1種以上。
- 如申請專利範圍第1項之微影製程用洗淨液,其中,在前述水溶性有機溶劑中前述高極性溶劑之比例為5~60質量%,前述乙二醇醚系溶劑之比例為5~55質量%,前述多元醇之比例為5~30質量%。
- 如申請專利範圍第1項之微影製程用洗淨液,其中,前述4級氫氧化銨係下述一般式(1)所示之化合物,
- 如申請專利範圍第1項之微影製程用洗淨液,其中,前述無機鹼之含有量,相對於總量為0.1質量ppm以 上、未滿0.1質量%。
- 一種配線形成方法,其係在藉由將金屬埋入於使用抗蝕膜在半導體多層層合體之介電質層中所形成之蝕刻空間以形成金屬配線層之配線形成方法中,在前述蝕刻空間形成後,使用含有4級氫氧化銨、水溶性有機溶劑、水、無機鹼之微影製程用洗淨液至少將前述抗蝕膜除去,前述水溶性有機溶劑為含有偶極矩為3.0D以上之高極性溶劑、乙二醇醚系溶劑、多元醇;前述高極性溶劑與上述乙二醇醚系溶劑之合計含有量,相對於總量為30質量%以上。
- 如申請專利範圍第6項之配線形成方法,其中,在前述抗蝕膜之下層設置有反射防止膜,在前述蝕刻空間形成後,使用前述微影製程用洗淨液至少將前述抗蝕膜及前述反射防止膜除去。
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Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130220159A1 (en) * | 2012-02-28 | 2013-08-29 | Sony Corporation | Offset printing blanket cleaning liquid, method of cleaning offset printing blanket, method of manufacturing display unit, method of manufacturing printed material, and ink composition and printing method using the same |
JPWO2014057860A1 (ja) * | 2012-10-11 | 2016-09-05 | セントラル硝子株式会社 | 基板の洗浄方法および洗浄液組成物 |
US20140120717A1 (en) * | 2012-11-01 | 2014-05-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of Semiconductor Integrated Circuit Fabrication |
KR102032321B1 (ko) * | 2012-11-13 | 2019-10-15 | 동우 화인켐 주식회사 | 얼룩 발생 방지용 레지스트 박리액 조성물 |
US9460934B2 (en) * | 2013-03-15 | 2016-10-04 | Globalfoundries Inc. | Wet strip process for an antireflective coating layer |
CN104427781B (zh) * | 2013-09-11 | 2019-05-17 | 花王株式会社 | 树脂掩模层用洗涤剂组合物及电路基板的制造方法 |
JP6233779B2 (ja) * | 2013-11-18 | 2017-11-22 | 富士フイルム株式会社 | 変性レジストの剥離方法、これに用いる変性レジストの剥離液および半導体基板製品の製造方法 |
CN103676504B (zh) * | 2013-12-13 | 2016-08-17 | 江阴润玛电子材料股份有限公司 | 一种水性光刻胶剥离液 |
WO2017126652A1 (ja) * | 2016-01-20 | 2017-07-27 | 日揮プラントイノベーション株式会社 | 重質炭化水素又は分子に極性を与える元素を含む系に生成したスラッジ及び硬質化皮膜除去用の洗浄液組成物、ならびにそれを用いた洗浄方法 |
WO2017150620A1 (ja) * | 2016-03-01 | 2017-09-08 | 東京応化工業株式会社 | 半導体基板又は装置の洗浄液及び洗浄方法 |
KR101893582B1 (ko) * | 2016-08-12 | 2018-10-05 | (주)엠티아이 | 웨이퍼 가공용 박리제 조성물 및 이를 포함하는 박리제 |
CN108424818A (zh) * | 2017-02-14 | 2018-08-21 | 东友精细化工有限公司 | 掩模清洗液组合物 |
JP7020905B2 (ja) * | 2017-12-27 | 2022-02-16 | 花王株式会社 | 樹脂マスク剥離用洗浄剤組成物 |
JP2021127351A (ja) * | 2018-05-16 | 2021-09-02 | Jsr株式会社 | 洗浄剤、洗浄剤の製造方法、および対象物の処理方法 |
JP7363078B2 (ja) * | 2019-04-09 | 2023-10-18 | 三菱瓦斯化学株式会社 | 底部反射防止膜の除去液、及び半導体素子の製造方法 |
KR102324927B1 (ko) * | 2019-10-01 | 2021-11-12 | 동우 화인켐 주식회사 | 얼룩 발생 방지용 레지스트 박리액 조성물 |
CN113430064B (zh) * | 2020-03-23 | 2024-04-26 | 上海新阳半导体材料股份有限公司 | 一种无羟胺水基清洗液、其制备方法及应用 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100056410A1 (en) * | 2006-09-25 | 2010-03-04 | Advanced Technology Materials, Inc. | Compositions and methods for the removal of photoresist for a wafer rework application |
Family Cites Families (11)
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JP3738996B2 (ja) * | 2002-10-10 | 2006-01-25 | 東京応化工業株式会社 | ホトリソグラフィー用洗浄液および基板の処理方法 |
JP2002357908A (ja) | 2001-05-31 | 2002-12-13 | Tokyo Ohka Kogyo Co Ltd | ホトレジスト用剥離液 |
US20030138737A1 (en) * | 2001-12-27 | 2003-07-24 | Kazumasa Wakiya | Photoresist stripping solution and a method of stripping photoresists using the same |
JP3516446B2 (ja) * | 2002-04-26 | 2004-04-05 | 東京応化工業株式会社 | ホトレジスト剥離方法 |
JP4282054B2 (ja) | 2002-09-09 | 2009-06-17 | 東京応化工業株式会社 | デュアルダマシン構造形成プロセスに用いられる洗浄液および基板の処理方法 |
US7442675B2 (en) * | 2003-06-18 | 2008-10-28 | Tokyo Ohka Kogyo Co., Ltd. | Cleaning composition and method of cleaning semiconductor substrate |
JP4440689B2 (ja) * | 2004-03-31 | 2010-03-24 | 東友ファインケム株式会社 | レジスト剥離剤組成物 |
JP4678673B2 (ja) * | 2005-05-12 | 2011-04-27 | 東京応化工業株式会社 | ホトレジスト用剥離液 |
JP2008003399A (ja) * | 2006-06-23 | 2008-01-10 | Tokyo Ohka Kogyo Co Ltd | フォトレジスト用剥離液およびこれを用いた基板の処理方法 |
JP2008058625A (ja) * | 2006-08-31 | 2008-03-13 | Tokyo Ohka Kogyo Co Ltd | フォトレジスト用剥離液及びこれを用いた基板の処理方法 |
JP2009075285A (ja) * | 2007-09-20 | 2009-04-09 | Fujifilm Corp | 半導体デバイスの剥離液、及び、剥離方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100056410A1 (en) * | 2006-09-25 | 2010-03-04 | Advanced Technology Materials, Inc. | Compositions and methods for the removal of photoresist for a wafer rework application |
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