TWI549898B - 製造包含一微構造化或奈米構造化的構造元件的構件的方法 - Google Patents

製造包含一微構造化或奈米構造化的構造元件的構件的方法 Download PDF

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TWI549898B
TWI549898B TW099129573A TW99129573A TWI549898B TW I549898 B TWI549898 B TW I549898B TW 099129573 A TW099129573 A TW 099129573A TW 99129573 A TW99129573 A TW 99129573A TW I549898 B TWI549898 B TW I549898B
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Taiwan
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layer
structural element
microstructured
nanostructured
sensor
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TW099129573A
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English (en)
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TW201109269A (en
Inventor
Andreas Kugler
Ricardo Ehrenpfordt
Mathias Bruendel
Frieder Haag
Frieder Sundermeier
Ulrike Scholz
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Bosch Gmbh Robert
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Publication of TW201109269A publication Critical patent/TW201109269A/zh
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    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
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    • B81C1/00301—Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
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Description

製造包含一微構造化或奈米構造化的構造元件的構件的方法
本發明關於一種製造包含一微構造化(mikrostrukturiert，英：microstructured)或奈米構造化(nanostrukturiert，英：nano-structured)的構造元件(Bauelement)的構件(Bauteil)。此方法包含提供一載體(它包含一施在此載體上的連接層)的步驟。此外，此方法包含將另一個層(Schicht，英：layer)施在該連接層的上側，其中該另一層包含導電的範圍，其中該另一層包含至少二個上下設置的不同層次(Lage，英：stratum)，其中該住在一個層次中的導電範圍朝向該載體，此外本發明還關於依此方法所得的一種構件及其應用。
感測器一般封裝(Verpacken)在以冲壓格(Stanzgitter)或基材為基礎的「包封殼體」(模殼體)中。它們可為以一種銅-塑膠殼體[銅-導線架(Leadframe)]為基礎的基材的實施方式，該基材包含具端子腳的殼體(有導線殼體)或不具端子腳的殼體(無導線殼體)。在此，個別的感測器或ASIC(因應用而異的積體電路)相鄰地或上下重疊地封裝到該基材料上，然後接著作一道射出成形程序。但也有越來越多的新式無基材的殼材被開發。
晶片封裝的一種變更例稱為eWLB(Embedded Wafer Leve Ball-Grid-Aray，埋設之晶圓位準球格陣列)。在此，晶片以其活性側到一晶圓載體的一暫時性載體膜上，然後用一壓機物料(Pressmasse)作包封。在此程序產生所謂的「塑膠晶圓」[重組晶圓(reconstituted wafer)]，然後將它從載體膜拿掉，俾能在該活性側上形成配線(Umverdrahtung)。
要形成配線，係使用標準薄層技術與材料。那些為了作配線所製的貫穿接點(Durchkontakt)以及其相關的面隨後設以銲料阻擋漆(Ltstopplack)，並利用鋸切將構造元件從該塑膠晶圓切分(vereinzeln)出來。這種構想的缺點為：在鑄造(模製)之後，該敏感易損的晶片表面係露空者，因此須使用繁複的薄層技術，俾能作配線。這點在製造包含這種微構造化或奈米構造化的構造元件的構件時，需要除塵空內構造(Reinraum-Infrastruktur)。
舉例而言，在美專利US 2004/0169264提到一種積體電路用的設置(封裝)構造以及其製造方法。在此，該構造元件用一充填層包封，然後在另一步驟中將一有機層施覆，作貫穿接點(Durchkontaktierung，英：through-contact)穿過該層，並將它與一配線層連接。但這種作法有缺點，這是因為該構造元件的後側倚在基材上之故。因此其活性(aktiv)面不受保護。
人們希望有一種較佳的方法來製造微構造化或奈米構造化的構造元件，其中該構造元件在施加後呈受保護的狀態，且可利用一般的程序在進一步的過程中作接點接觸。
因此本發明的目的在提供一種製造包含一微構造化或奈米構造化的構造元件的構件的方法，包含以下步驟：--　提供一載體，該載體包含一個施在該載體上的連接層；--　將另一個層施在該連接層的上側，其中該另一層包含導電的範圍，其中該另一層包含至少二個上下設置的不同層次，且其中該位在一層次的導電的範圍朝向該載體；--　將至少一個微構造化或奈米構造化的構造元件施在該另一層；--　將該微構造化或奈米構造化的構造元件用一包封物料至少部分地包封；--　將所得到的複合物──包含該包封物料，該至少一微構造化或奈米構造化的構造元件以及該另一層──從該連接層撕離。
本發明的方法的一優點為：既有的eWLB方法可簡化。依此程序，在撕離程序步驟中使可該複合物分離，而不會使該微構造化或奈米構造化的構造元件之要設配線的那一側露空，其中在隨後的步驟中可將該構件切分。這點使得除塵室技術能不必使用。因此之故，可在一除塵室外製造此構件。同樣，處理格式(Verarbeitungsformat)可作自由造形，因為其造形不一定非和在晶圓成形作業綁在一起不可，而依先前技術這種晶圓成形作業只能在除塵室中作。同樣地，模製方法可自由選擇，這是因為處理格式可配合模製方法。
依本發明，微構造化或奈米構造化的構造元件的內部構造尺寸特別是在從1奈米到100微米的範圍。在此，「內部構造尺寸」一詞指在構造元件內的構造(例如桁樑、框條或導線路)的尺寸。
該微構造化或奈米構造化的構造元件可包含一範圍，它用於與另一微構造化或奈米構造化的構造元件作導電式接觸。這種範圍也稱「活性面」、端子墊片(Anschluβpad)或端子接點。這些微構造化或奈米構造化的構造元件還可包含積體電路、感測器元件、被動構造元件、陶瓷電容器、電阻或動作器，這些構造元件再造成一種系統，該系統在切分後具有一獨立的設置(封裝)。
本發明的方法的第一步驟包括提供一載體，其中該載體包含一個施在載體上的連接層，依本發明，舉例而言，載體的材料可由以下之物選出：陶瓷、金屬或高熔點塑膠。金屬可由不銹鋼1.4034及/或1.4310選出。載體可在此方法中當作批次技術(Batchtechologie)用的基礎使用。
利用連接層可將該微構造化或奈米構造化的構造元件以較佳的設置方式固定在載體上。
該連接層宜均勻地施在載體上側，所用的連接層可在高達200℃的溫度仍保持穩定而不會分解。在此，該連接層也可包含一粘著膜，特別是該連接層可用離心施在載體上或利用噴漆方式施覆。此外，該連接層可施在載體上，其方法係將它印刷、噴墨、流覆(dispensen)、層疊、作構造化或不作構造化及/或在施覆後作構造化。連接層的層厚度可在0.25微米到200微米的範圍，且宜在1微米到100微米的範圍，尤宜在2微米到10微米的範圍。
本發明另一步驟包括將另一個層施在連接層上側，其中該另一層包含導電的範圍，其中該另一層包括至少二個上下設置的不同層次，且其中在一層次中的導電範圍朝向該載體。為此，該連接層的至少一個部分範圍宜與該另一層接層。在此，依本發明，此層可包含一個由至少二種不同材料構造的層。在另一變更例中可將一種材料埋設到另一材料中。在此，至少一種材料包含一導電材料，而另一材料包含一絕緣材料，該另一層施在連接層上的上的方式宜使該導電層與連接層接觸。這種設置的一優點為，在撕離後一以後的程序步驟，該導電的範圍可作一道直接的構造化作業。
然後將至少一微構造化或奈米構造化的構造元件施在該另一層的上側。在此，該微構造化或奈米構造化構造元件與該另一層的上側接觸。此外特別是可使該微構造化或奈米構造化的構造元件的活性面與該上側接觸。微構造化或奈米構造化的構造元件的施加作業可利用一自動施加器實施。此外，該微構造化或奈米構造化的構造元件的施加作業可藉著將載體、構造元件及/或連接層加熱而變得更容易。
此另一層可作交聯及/或硬化。舉例而言，這點可利用一道溫度步驟或用UV照射達成。
本發明另一步驟係將該微構造化或奈米構造化的構造元件用一包封物料(Umhllmasse)至少部分地包封。此包封物料的其他名稱還有「鑄件物料(Vergussmasse，英：cast mass)」、「模複合成分(Moldcompound-Komponente)」、「鑄造物料(Vergieβmasse，英：casting mass)」、「射出壓機物料(Spritzpressmasse)」、「射出成形物料」、「模物料」及/或壓機物料(Pressmasse)。此外該包封物料可有填充料。這些填充料用於配合材料性質、包封物料特別可將一種微構造化或奈米構造化的構造元件包封，此包封物料可藉加熱而交聯及硬化。舉例而言，包封物料可由以下之物選出：環氧樹脂、聚丙烯酸酯、聚氧甲叉及/或矽力康。
所用的包封物料宜具有低潛變流(Kriechstrom，英：creep flow)性質、高均勻性、低折射指數、低收縮(Schrumpf)及/或低導熱係數。此外，所用的包封物料的熱膨脹係數可和矽的熱膨脹係數的值有十倍的差，同樣，所用的包封物料可特別具有高彈性模數及高玻璃過渡溫度。
在本發明的範疇中，「包封」一詞指射出成形、射出壓製(Spritzpressen)、鑄造、層疊、以及使用英文的行話molding(模製)、transfer molding(轉模製)、injection molding(射出成形)、potting[罐成形(罐燒)]、liquid molding(液體模製)、compression molding(壓模製)及sheetmolden(片模製)。
在用包封物料包封之後，舉例而言，接著可將所得的設置(Anordnung，英：arrangement)加熱，在此，「所得的設置」一詞指由前面方法步驟得到之包封的構造元件，此步驟也稱「後模固化」(Post-Mold-Cure,PMC)步驟，對於模料所需的PMC步驟在本發明中使用，以使模料硬化及終交聯。
本發明的方法的另一步驟係將所得的複合物──包含包封物料，該至少一微構造化或奈米構造化的構造元件，以及其他的層──從連接層撕離。「撕離」表示，該包封物料可連同該微構造化或奈米構造化的構造元件及其他的層一齊從連接層撕離。為此，特別是用於將其他層從連接層撕離所要施的力量，比將包封物料從其他層撕離所要施的力量更小。
然後可作習知之用於作貫穿接點、以及將另一層構造化、以及作配線的一般方法步驟。舉例而言，可利用雷射在另一層中製造貫穿接點，為此可使用一種具有一組合的雷射系統的雷射穿孔機。
接著，舉例而言，可利用一導電層將貫穿接點鍍上金屬，為此，特別可用金屬導及/或導電聚合物當作導電層。為此，特別是在雷射鑽孔後，將鑽孔清理並鍍金屬。然後可將表面用鈀活化，俾能用化學方式將銅(層厚度0.5-0.8微米)鍍上去。最後的步驟，可將電解銅施上去，其中可使用所謂的脈波電鍍(Puls-Plating)技術。
在本發明的方法的另一特點中，在該另一中該導電的範圍包含一鋁層、銅層、銀層、鎳層、鈀層、鉻層、氮化鈦層、導電的聚合物及/或一種金屬。這些材料除了有良好導電性及可構造化性外，還有高導熱係數，它們可使在操作時產生的熱順利導離。
在另一變更例中，該另一層可包含一種複合物，由銅、鎳或金構成，或包含由銅、鎳、鈀及/或金構成的複合物，此複合物可部分地作預構造化，同樣地，舉例而言，該複合物可在導電範圍上包含一光罩。此另一層宜可具特別的「調整標記」以將該微構造化或奈米構造化的構造元件作放置。在此，該調整標記可為貫穿者。在此，依本發明「貫穿」一詞表示該標記貫穿過該另一層，因此在朝向載體的那一側及相反側都是露空者。
在本發明的方法的另一實施例中，該另一個層為鍍銅的樹脂膜，舉例而言，此膜可為一個層疊在絕緣樹脂上的銅膜，它也可稱RCC膜(Resin-Coated-Copper)，樹脂可由環氧樹脂或聚丙烯酸酯選出。這種膜的優點為：它可呈複合材料方式用單一道方法步驟施覆。因此，可將程序簡化，這是因為可在既有的方法中將膜一齊施在一基材上之故。此處，在使用RCC膜時還有一優點，即該微構造化或微奈米化的構造元件的活性面可利用該RCC膜保護。
在本發明方法的另一實施例，該微構造化或奈米構造化的構造元件由以下之物選出：微電機械系統、依應用而異(Anwendungsspezifisch，英：application-specific)的積體電路、半導體構造元件及/或感測器元件。
該感測器元件宜可為加速度感測器、轉速感測器、磁感測器、霍爾感測器、質量流感測器、氣體感測器、光學感測器、濕度感測器、介質感測器及/或多晶片模組的構件。
舉例而言，半導體構造元件可從以下之物選出：主動像素感測器(Active Pixel Sensor)、電荷耦合裝置(CCD)感測器、接觸影像感測器DIA(交流電二極體)、數位像素感測器、電子乘法管(電子乘法)CCD、光閘流體、閘陣列(Gate Array)、閘關掉(Gate-Turn-Off)(GTO)閘流體、半導體繼電器、半導體儲存器、積分級、微處理機、神經圖(Neuromorpho)晶片、光耦合器、位置敏感裝置、太陽電池、電池回耦的操作放大器、閘流體、閘流體調整器、閘流體四極(Thyristortetrode)、閘流體塔(Thyristorturm)、飛越時間(Time-of-flight)感測器、壓力感測器、加速度感測器、濕度感測器、轉速感測器、質量流感測器、磁感測器、氣體感測器、霍爾感測器、濕度感測器、渠溝(Trench)技術及/或視訊RAM(讀寫記憶體)。利用本發明的方法有一優點，即：可很節省空間地將數個感測器相鄰設置，其中由於在程序中已施覆該含有導電範圍的另一層，故該構造元件的功能改善。
本發明方法的另一變更例包含一方法步驟：在至少二個微構造化或奈米構造化的構造元件的場合製造一貫穿接點，並將該二元件利用此鍍銅的樹脂膜互相接觸，其方法係將該樹脂膜作配線。舉例而言，此微構造化或奈米構造化的構造元件之朝向載體的那一側包含用於接觸的範圍，例如一端子墊片(Anschluβpad)或端子接點，其中這些範圍至少部分地和該鍍銅的樹脂膜接觸。
本發明的方法宜更包含製造一貫穿接點的步驟，該貫穿接點穿過該另一個層到該微構造化或奈米構造化的構造元件的一範圍，該範圍用於作接觸。
利用一道雷射鑽孔及鍍金屬層程序可製造該電接點。此外，貫穿接點可用化學方式及/或物理方式製造。特別是貫穿接點可用化學蝕刻製造。此時RCC膜可將相關的微構造化或微奈米化的構造元件互相連接，這種連接部還可利用電鍍補強。
該另一層可先用一種紫外線雷射光切開，然後該層可利用CO2雷射進一步除去直到該微構造化或奈米構造化的構造元件為止。這種組合的系統的優點為：該微構造化或奈米構造化的構造元件不會被CO2雷射損壞。
在本發明的方法的另一實施例，在將該微構造化或奈米構造化的構造元件用一包封物料包封時，一個壓模(Stempel)與該微構造化或奈米構造化的構造元件至少部分地接觸。在此，如果在用包封物料包封後，該包封物料尚未硬化，則該壓模可與該微構造化或奈米構造化的構造元件接觸。為此，該壓模可壓入該包封物料進去。同樣地，該壓模可與該微構造化或奈構造化的構造元件在用包封物料包封前接觸，然後在其上作包封。因此可在包封物料硬化後在一以後的程序步驟中將壓模再拿掉，如此可使介質(Medium)有通路能到達該微構造化或奈米構造化的構造元件。其一優點為：特別是可在配線以後才將壓模拿掉，因此該微構造化或奈米構造化中的構造元件不會受到先前的方法步驟損害。
此外本發明的一標的為一種由上述方法得到的構件，包含一個被一包封物料包圍的微構造化或奈米構造化的構造元件，其中該微構造化或奈米構造化的構造元件與一另一層至少部分地接觸。其中該另一層包含至少一貫穿接點以與該微構造化或奈米構造化的構造元件的範圍接觸，且其中該貫穿接點與一導電層作導電式接觸。特別是該微構造化或奈米構造化構造元件可由以下之物選出：MEMS、ASIC。此構件宜具有一鍍銅的樹脂膜，它在進一步的步驟中可作構造化。此構件(它具有此膜當作配線的基礎)的優點為：它特別具有感測器的小型化的封裝。
在一實施例中，依本發明的構件更包含一空腔，該空腔從外側穿過一種材料(該材料鄰界到該微構造化或奈米構造化的構造元件)，且一直貫穿到該微構造化或奈米構造化的構造元件為止。如果不用此方式(或者除了用此方式外同時另外)也可使該空腔貫穿過該包含導電範圍的膜過去。如此，舉例而言，可使介質有通路(Zugrif，英：access)可到達包裝過的構造元件(如感測器)。在此該感測器可為：壓力感測器、流體感測器及/或化學感測器。如此可有利地使中間空間與外介質相通，其中特別是利用一種流體相通而達成此點。
本發明另一標的為一種上述的構件的應用，其係用在壓力感測器、加速度感測器、溫度感測器、轉速感測器、質量流感測器、磁感測器、氣體感測器、霍爾感測器及/或濕度感測器。在此，「感測器」表示製成的系統，它們包含一分析電子電路。舉例而言，利用本發明的方法，可生產更廉價的分析系統，因為本發明的方法可一齊帶入一既有的方法中，同樣地可達到一種優點：可使用具有不同功能的數個構造元件而製造多功能感測器，且可利用批次程序產生這些構造元件。
本發明茲配合以下圖式進一步說明。
圖1顯示一提供的載體(1)，它具有位於載體(1)上的連接層(2)。在此，連接層(2)平平地倚在載體(1)上。載體(1)的材料宜為不銹鋼，在此處的情形特別是不銹鋼1.4034。在此處的情形，連接層(2)特別包含以聚合物為基礎的材料。
圖2顯示將另一層(3)施加到連接層(2)上以後的狀態。在此處的情形，該另一層須為一RCC膜(3)。在此，RCC膜(3)包含一環氧樹脂層(3a)及一銅層，如放大圖所示，在RCC膜(3)中所含的環氧樹脂層(3a)倚在銅層(3b)上且在此情形中形成用於施構造元件的那一側。
圖3中，將微構造化或奈米構造化的構造元件(4)及(4’)施加，在此例中，該微構造化或奈米構造化的構造元件(4)可為MEMS，而該微構造化或奈米構造化的構造元件(4’)可為ASIC。在此，構件(4)與(4’)的形狀與功能可以不同。該微構造化或奈米構造化的構造元件(4)(4’)進入RCC膜(3)的深度，使得其接點位置(5)(5’)完全被RCC膜(3)蓋住。在RCC膜(3)的環氧樹脂層(3a)上施加該微構造化或奈米構造化的構造元件(4)(4’)。構造元件(4)(4’)具有朝向載體(1)的接點位置(5)及(5’)。它們位在環氧樹脂層(3a)內。然後，使環氧樹脂層(3a)交聯。
在隨後步驟中，鑄造圖3中所示的設置。圖4顯示，該包封物料(6)如何與該微構造化或奈米構造化的構造元件接觸，然後可加熱到一溫度，在此溫度該包封物料(6)固化及硬化。
下一步驟係將該複合物[它包含包封物料(6)、微構造化或奈米構造化構造元件(4)(4’)、和RCC膜]從連接層(2)撕離。在圖5中，顯示該埋入包封物料(6)中的微構造化或奈米構造化的構造元件(4)(4’)和該RCC膜(3)呈單一之複合件形式，從連接層(2)撕離後，RCC膜的銅層可自由地探及。
在載體(1)和連接層(2)拿掉後，作構造化和配線的作業。在此在圖6中顯示雷射鑽孔過程後的構件。為此需作一道雷射鑽孔過程穿過RCC膜(3)的環氧樹脂層(3a)和RCC膜(3)的銅層(3b)，此雷射鑽孔過程產生一貫穿接點(7)(7’)通到微構造化或微奈米構造化的構造元件(4)(4’)的接點位置。
圖7顯示鍍金屬後，貫穿接點(7)(7’)的表面與一導線(8)接觸。舉例而言，在此將銅層(3b)作電鍍補強。此外，銅層(3b)可設有一銲料阻擋件(9)，其中該銲料阻擋件還可另外作構造化。作過配線後，可藉切鋸將構件切分，這點係用虛線表示。
圖8顯示具有各一空腔(10)及(10’)的單獨構件，在構件的左半部可看到一空腔(10)穿過包封物料(6)一直到該微構造化或奈米構造化的構件(4)(4’)為止，在其右邊可看到一空腔(10’)穿過RCC膜(3)。
(1)‧‧‧載體
(2)‧‧‧連接層
(3)‧‧‧另一層(RCC膜)
(3a)‧‧‧環氧樹脂層
(3b)‧‧‧銅層
(4)(4’)‧‧‧構造元件
(5)(5’)‧‧‧接點位置
(6)‧‧‧包封物料
(7)(7’)‧‧‧貫穿接點
(8)‧‧‧導線
(9)‧‧‧銲料阻擋件
(10)(10’)‧‧‧空腔
圖1係一提供的載體；
圖2係在施加RCC膜後的步驟的示圖；
圖3係該微構造化或奈米構造化的構造元件的施加步驟的示圖；
圖4係在施加包封物料後的步驟的示圖；圖5係在撕離後的步驟的示圖；圖6係在製造貫穿接點後的步驟的示圖；圖7係在貫穿接點鍍金屬後的步驟的示圖；圖8係具有二個空腔的構造的構件的示圖。
(3a)．．．環氧樹脂層
(3b)．．．銅層
(4)(4’)．．．構造元件
(5)(5’)．．．接點位置
(6)．．．包封物料
(8)．．．導線
(9)．．．銲料阻擋件

Claims (9)

  1. 一種製造包含一微構造化或奈米構造化的構造元件(4)(4’)的構件的方法，包含以下步驟：提供一載體(1)，該載體(1)包含一個施在該載體(1)上的連接層(2)；將另一個層(3)施在該連接層(2)的上側，其中該另一層(3)包含導電的範圍，其中該另一層(3)包含至少二個上下設置的不同層次，且其中該位在一層次的導電的範圍朝向該載體；將至少一個微構造化或奈米構造化的構造元件(4)(4’)施在該另一層(3)；將該微構造化或奈米構造化的構造元件(4)(4’)用一包封物料(6)至少部分地包封；在該將該微構造化或奈米構造化的構造元件(4)(4’)用一包封物料(6)包封時，有一個可拿掉的壓模(11)與該微構造化或奈米構造化的構造元件(4)(4’)至少部分地接觸；將所得到的複合物--包含該包封物料(6)，該至少一微構造化或奈米構造化的構造元件以及該另一層(3)--從該連接層(2)撕離。
  2. 如申請專利範圍第1項之方法，其中：在該另一層(3)中該導電的範圍包含一鋁層、銅層、銀層、鎳層、鈀層、鉻層、氮化鈦層、導電的聚合物及/或一金屬。
  3. 如申請專利範圍第1項之方法，其中：該另一個層(3)為鍍銅的樹脂膜。
  4. 如申請專利範圍第1項之方法，其中：該微構造化或奈米構造化的構造元件(4)(4’)由以下之物選出：微電機械系統、依應用而異的積體電路、半導體構造元件及/或感測器元件。
  5. 如申請專利範圍第1項之方法，其中：更包含製造一貫穿接點(7)(7’)的步驟，穿過該另一個層到該微構造化或奈米構造化的構造元件(4)(4’)的一範圍(5)(5’)，該範圍用於作接觸。
  6. 如申請專利範圍第1項之方法，其中：更包含將該構造元件切分的步驟。
  7. 一種由申請專利範圍第1項的方法得到的構件，包含一個被一包封物料(6)包圍的微構造化或奈米構造化的構造元件(4)(4’)，其中該微構造化或奈米構造化的構造元件(4)(4’)與一另一層至少部分地接觸，其中該另一層(3)包含至少一貫穿接點(7)(7’)，以與該微構造化或奈米構造化的構造元件(4)(4’)的範圍接觸，且其中該貫穿接點(7)(7’)與一導電層作導電式接觸。
  8. 如申請專利範圍第7項之構件，其中：更包含一空腔(10)，該空腔(10)從外側穿過一種材料該材料鄰界到該微構造化或奈米構造化的構造元件(4)(4’)，且該空腔(10)一直貫穿到該微構造化或奈米構造化的構造元件(4)(4’)為止。
  9. 一種如申請專利範圍第7項的構件的應用，其係用在壓力感測器、加速度感測器、溫度感測器、轉速感測器、質量流感測器、磁感測器、氣體感測器、霍爾感測器及/ 或濕度感測器。
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