TWI548728B - 一種製造半導體裝置的方法，其包含在包含特定有機化合物之ＣＭＰ組成物的存在下化學機械拋光元素鍺及／或Ｓｉ1－ｘ Ｇｅｘ材料 - Google Patents

一種製造半導體裝置的方法，其包含在包含特定有機化合物之ＣＭＰ組成物的存在下化學機械拋光元素鍺及／或Ｓｉ1－ｘ Ｇｅｘ材料 Download PDF

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Publication number
TWI548728B
TWI548728B TW101127387A TW101127387A TWI548728B TW I548728 B TWI548728 B TW I548728B TW 101127387 A TW101127387 A TW 101127387A TW 101127387 A TW101127387 A TW 101127387A TW I548728 B TWI548728 B TW I548728B
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Taiwan
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alkyl
heterocyclic
amine
aryl
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TW101127387A
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Chinese (zh)
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TW201323590A (zh
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巴斯提昂 瑪登 諾勒
柏提娜 德列雪
克里斯多福 吉洛特
李玉琢
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巴斯夫歐洲公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW101127387A 2011-08-01 2012-07-30 一種製造半導體裝置的方法，其包含在包含特定有機化合物之ＣＭＰ組成物的存在下化學機械拋光元素鍺及／或Ｓｉ1－ｘ Ｇｅｘ材料 TWI548728B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201161513694P 2011-08-01 2011-08-01

Publications (2)

Publication Number Publication Date
TW201323590A TW201323590A (zh) 2013-06-16
TWI548728B true TWI548728B (zh) 2016-09-11

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TW101127387A TWI548728B (zh) 2011-08-01 2012-07-30 一種製造半導體裝置的方法，其包含在包含特定有機化合物之ＣＭＰ組成物的存在下化學機械拋光元素鍺及／或Ｓｉ1－ｘ Ｇｅｘ材料

Country Status (8)

Country Link
US (1) US9443739B2 (https=)
EP (1) EP2742103B1 (https=)
JP (1) JP2014529183A (https=)
KR (1) KR20140059216A (https=)
CN (1) CN103827235B (https=)
RU (1) RU2605941C2 (https=)
TW (1) TWI548728B (https=)
WO (1) WO2013018015A2 (https=)

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US9238755B2 (en) * 2011-11-25 2016-01-19 Fujima Incorporated Polishing composition
CN105229098B (zh) * 2013-05-15 2017-08-11 巴斯夫欧洲公司 包含n,n,n＇,n＇‑四(2‑羟基丙基)乙二胺或甲磺酸的化学机械抛光组合物
JP6139975B2 (ja) * 2013-05-15 2017-05-31 株式会社フジミインコーポレーテッド 研磨用組成物
EP2810997A1 (en) 2013-06-05 2014-12-10 Basf Se A chemical mechanical polishing (cmp) composition
KR101842033B1 (ko) * 2014-01-06 2018-03-26 한화테크윈 주식회사 그래핀 제조용 조성물 및 이를 이용한 그래핀의 제조 방법
JP6436638B2 (ja) * 2014-03-27 2018-12-12 株式会社フジミインコーポレーテッド 研磨用組成物
JP6094541B2 (ja) * 2014-07-28 2017-03-15 信越半導体株式会社 ゲルマニウムウェーハの研磨方法
US20160053381A1 (en) * 2014-08-22 2016-02-25 Cabot Microelectronics Corporation Germanium chemical mechanical polishing
US9530655B2 (en) * 2014-09-08 2016-12-27 Taiwan Semiconductor Manufacting Company, Ltd. Slurry composition for chemical mechanical polishing of Ge-based materials and devices
US9431261B2 (en) 2014-12-01 2016-08-30 The Boeing Company Removal of defects by in-situ etching during chemical-mechanical polishing processing
JP2018506176A (ja) * 2014-12-16 2018-03-01 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ ゲルマニウムを含む基板の高効率研磨のための化学機械研磨（ｃｍｐ）組成物
US9646841B1 (en) 2015-10-14 2017-05-09 International Business Machines Corporation Group III arsenide material smoothing and chemical mechanical planarization processes
US9916985B2 (en) 2015-10-14 2018-03-13 International Business Machines Corporation Indium phosphide smoothing and chemical mechanical planarization processes
US9646842B1 (en) 2015-10-14 2017-05-09 International Business Machines Corporation Germanium smoothing and chemical mechanical planarization processes
KR102640734B1 (ko) * 2015-12-24 2024-02-27 솔브레인 주식회사 유기막 연마용 슬러리 조성물 및 이를 이용한 반도체 기판 연마 방법
KR102462501B1 (ko) 2016-01-15 2022-11-02 삼성전자주식회사 슬러리 조성물을 이용하는 집적회로 소자의 제조 방법
SG11201900141UA (en) * 2016-08-26 2019-03-28 Ferro Corp Slurry composition and method of selective silica polishing
US10600655B2 (en) * 2017-08-10 2020-03-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten
JP2021089906A (ja) * 2018-03-22 2021-06-10 株式会社フジミインコーポレーテッド ゲルマニウム溶解抑制剤
US11697183B2 (en) 2018-07-26 2023-07-11 Taiwan Semiconductor Manufacturing Co., Ltd. Fabrication of a polishing pad for chemical mechanical polishing
US10920105B2 (en) 2018-07-27 2021-02-16 Taiwan Semiconductor Manufacturing Co., Ltd. Materials and methods for chemical mechanical polishing of ruthenium-containing materials
KR102886739B1 (ko) 2019-02-11 2025-11-17 삼성전자주식회사 연마 조성물 및 이를 사용한 반도체 소자 제조 방법
US12448568B2 (en) * 2022-03-10 2025-10-21 Fujifilm Electronic Materials U.S.A., Inc. Etching compositions
WO2026072400A1 (en) * 2024-09-24 2026-04-02 Entegris, Inc. Cmp composition including alcohol amine molybdenum etch inhibitor

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US3429080A (en) * 1966-05-02 1969-02-25 Tizon Chem Corp Composition for polishing crystalline silicon and germanium and process
CN1124504A (zh) * 1993-05-26 1996-06-12 罗德尔公司 改良的抛光组合物和抛光方法

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JP4759298B2 (ja) 2005-03-30 2011-08-31 株式会社フジミインコーポレーテッド 単結晶表面用の研磨剤及び研磨方法
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US7897061B2 (en) * 2006-02-01 2011-03-01 Cabot Microelectronics Corporation Compositions and methods for CMP of phase change alloys
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US20090001339A1 (en) 2007-06-29 2009-01-01 Tae Young Lee Chemical Mechanical Polishing Slurry Composition for Polishing Phase-Change Memory Device and Method for Polishing Phase-Change Memory Device Using the Same
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US3429080A (en) * 1966-05-02 1969-02-25 Tizon Chem Corp Composition for polishing crystalline silicon and germanium and process
CN1124504A (zh) * 1993-05-26 1996-06-12 罗德尔公司 改良的抛光组合物和抛光方法

Also Published As

Publication number Publication date
TW201323590A (zh) 2013-06-16
WO2013018015A3 (en) 2013-03-28
RU2605941C2 (ru) 2016-12-27
CN103827235A (zh) 2014-05-28
RU2014107763A (ru) 2015-09-10
KR20140059216A (ko) 2014-05-15
CN103827235B (zh) 2016-08-17
JP2014529183A (ja) 2014-10-30
EP2742103A4 (en) 2015-03-25
WO2013018015A2 (en) 2013-02-07
US9443739B2 (en) 2016-09-13
US20140170852A1 (en) 2014-06-19
EP2742103A2 (en) 2014-06-18
EP2742103B1 (en) 2016-09-21

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