KR20140059216A - 특정 유기 화합물을 포함하는 CMP 조성물의 존재하에서 원소 게르마늄 및/또는 Si₁­ｘGeｘ 재료의 화학적 기계적 연마를 포함하는 반도체 디바이스의 제조 방법 - Google Patents

특정 유기 화합물을 포함하는 CMP 조성물의 존재하에서 원소 게르마늄 및/또는 Si₁­ｘGeｘ 재료의 화학적 기계적 연마를 포함하는 반도체 디바이스의 제조 방법 Download PDF

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Publication number
KR20140059216A
KR20140059216A KR1020147005585A KR20147005585A KR20140059216A KR 20140059216 A KR20140059216 A KR 20140059216A KR 1020147005585 A KR1020147005585 A KR 1020147005585A KR 20147005585 A KR20147005585 A KR 20147005585A KR 20140059216 A KR20140059216 A KR 20140059216A
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KR
South Korea
Prior art keywords
alkyl
amino
heterocyclic
aryl
chemical mechanical
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Ceased
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KR1020147005585A
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English (en)
Korean (ko)
Inventor
바슈티안 마르텐 놀러
베티나 드레슈어
크리스토쁘 길로
유주오 리
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바스프 에스이
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Application filed by 바스프 에스이 filed Critical 바스프 에스이
Publication of KR20140059216A publication Critical patent/KR20140059216A/ko
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020147005585A 2011-08-01 2012-07-30 특정 유기 화합물을 포함하는 CMP 조성물의 존재하에서 원소 게르마늄 및/또는 Si₁­ｘGeｘ 재료의 화학적 기계적 연마를 포함하는 반도체 디바이스의 제조 방법 Ceased KR20140059216A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161513694P 2011-08-01 2011-08-01
US61/513,694 2011-08-01
PCT/IB2012/053877 WO2013018015A2 (en) 2011-08-01 2012-07-30 A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING OF ELEMENTAL GERMANIUM AND/OR Si1-XGeX MATERIAL IN THE PRESENCE OF A CMP COMPOSITION COMPRISING A SPECIFIC ORGANIC COMPOUND

Publications (1)

Publication Number Publication Date
KR20140059216A true KR20140059216A (ko) 2014-05-15

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147005585A Ceased KR20140059216A (ko) 2011-08-01 2012-07-30 특정 유기 화합물을 포함하는 CMP 조성물의 존재하에서 원소 게르마늄 및/또는 Si₁­ｘGeｘ 재료의 화학적 기계적 연마를 포함하는 반도체 디바이스의 제조 방법

Country Status (8)

Country Link
US (1) US9443739B2 (https=)
EP (1) EP2742103B1 (https=)
JP (1) JP2014529183A (https=)
KR (1) KR20140059216A (https=)
CN (1) CN103827235B (https=)
RU (1) RU2605941C2 (https=)
TW (1) TWI548728B (https=)
WO (1) WO2013018015A2 (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170044156A (ko) * 2014-08-22 2017-04-24 캐보트 마이크로일렉트로닉스 코포레이션 게르마늄 화학적 기계적 연마
KR20170076251A (ko) * 2015-12-24 2017-07-04 솔브레인 주식회사 유기막 연마용 슬러리 조성물 및 이를 이용한 반도체 기판 연마 방법
US9991127B2 (en) 2016-01-15 2018-06-05 Samsung Electronics Co., Ltd. Method of fabricating integrated circuit device by using slurry composition
US11041097B2 (en) 2019-02-11 2021-06-22 Samsung Electronics Co., Ltd. Polishing composition and method of fabricating semiconductor device using the same
KR20240141863A (ko) * 2014-12-16 2024-09-27 바스프 에스이 게르마늄을 포함하는 기판의 높은 효과적 연마를 위한 화학 기계적 연마 (cmp) 조성물

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SG191877A1 (en) * 2011-01-25 2013-08-30 Hitachi Chemical Co Ltd Cmp polishing fluid, method for manufacturing same, method for manufacturing composite particle, and method for polishing base material
US9238755B2 (en) * 2011-11-25 2016-01-19 Fujima Incorporated Polishing composition
CN105229098B (zh) * 2013-05-15 2017-08-11 巴斯夫欧洲公司 包含n,n,n＇,n＇‑四(2‑羟基丙基)乙二胺或甲磺酸的化学机械抛光组合物
JP6139975B2 (ja) * 2013-05-15 2017-05-31 株式会社フジミインコーポレーテッド 研磨用組成物
EP2810997A1 (en) 2013-06-05 2014-12-10 Basf Se A chemical mechanical polishing (cmp) composition
KR101842033B1 (ko) * 2014-01-06 2018-03-26 한화테크윈 주식회사 그래핀 제조용 조성물 및 이를 이용한 그래핀의 제조 방법
JP6436638B2 (ja) * 2014-03-27 2018-12-12 株式会社フジミインコーポレーテッド 研磨用組成物
JP6094541B2 (ja) * 2014-07-28 2017-03-15 信越半導体株式会社 ゲルマニウムウェーハの研磨方法
US9530655B2 (en) * 2014-09-08 2016-12-27 Taiwan Semiconductor Manufacting Company, Ltd. Slurry composition for chemical mechanical polishing of Ge-based materials and devices
US9431261B2 (en) 2014-12-01 2016-08-30 The Boeing Company Removal of defects by in-situ etching during chemical-mechanical polishing processing
US9646841B1 (en) 2015-10-14 2017-05-09 International Business Machines Corporation Group III arsenide material smoothing and chemical mechanical planarization processes
US9916985B2 (en) 2015-10-14 2018-03-13 International Business Machines Corporation Indium phosphide smoothing and chemical mechanical planarization processes
US9646842B1 (en) 2015-10-14 2017-05-09 International Business Machines Corporation Germanium smoothing and chemical mechanical planarization processes
SG11201900141UA (en) * 2016-08-26 2019-03-28 Ferro Corp Slurry composition and method of selective silica polishing
US10600655B2 (en) * 2017-08-10 2020-03-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten
JP2021089906A (ja) * 2018-03-22 2021-06-10 株式会社フジミインコーポレーテッド ゲルマニウム溶解抑制剤
US11697183B2 (en) 2018-07-26 2023-07-11 Taiwan Semiconductor Manufacturing Co., Ltd. Fabrication of a polishing pad for chemical mechanical polishing
US10920105B2 (en) 2018-07-27 2021-02-16 Taiwan Semiconductor Manufacturing Co., Ltd. Materials and methods for chemical mechanical polishing of ruthenium-containing materials
US12448568B2 (en) * 2022-03-10 2025-10-21 Fujifilm Electronic Materials U.S.A., Inc. Etching compositions
WO2026072400A1 (en) * 2024-09-24 2026-04-02 Entegris, Inc. Cmp composition including alcohol amine molybdenum etch inhibitor

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US3429080A (en) * 1966-05-02 1969-02-25 Tizon Chem Corp Composition for polishing crystalline silicon and germanium and process
US5391258A (en) * 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
US5897375A (en) 1997-10-20 1999-04-27 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture
US20020197935A1 (en) * 2000-02-14 2002-12-26 Mueller Brian L. Method of polishing a substrate
KR100863159B1 (ko) * 2000-12-22 2008-10-13 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 산화 화합물 및 착물화 화합물을 함유하는 조성물
US20040175942A1 (en) 2003-01-03 2004-09-09 Chang Song Y. Composition and method used for chemical mechanical planarization of metals
TWI415926B (zh) * 2003-07-11 2013-11-21 Ｗ Ｒ 康格雷氏公司 化學機械研磨用磨粒
JP4759298B2 (ja) 2005-03-30 2011-08-31 株式会社フジミインコーポレーテッド 単結晶表面用の研磨剤及び研磨方法
JP4749775B2 (ja) * 2005-06-23 2011-08-17 山口精研工業株式会社 ウェーハ研磨液組成物及びウェーハ研磨方法
US7897061B2 (en) * 2006-02-01 2011-03-01 Cabot Microelectronics Corporation Compositions and methods for CMP of phase change alloys
DE102007019565A1 (de) 2007-04-25 2008-09-04 Siltronic Ag Verfahren zum einseitigen Polieren von Halbleiterscheiben und Halbleiterscheibe mit einer verspannt-relaxierten Si1-xGex-Schicht
US20090001339A1 (en) 2007-06-29 2009-01-01 Tae Young Lee Chemical Mechanical Polishing Slurry Composition for Polishing Phase-Change Memory Device and Method for Polishing Phase-Change Memory Device Using the Same
CN101765647B (zh) * 2007-07-26 2016-05-04 卡伯特微电子公司 用于相变材料的化学-机械抛光的组合物及方法
US7678605B2 (en) 2007-08-30 2010-03-16 Dupont Air Products Nanomaterials Llc Method for chemical mechanical planarization of chalcogenide materials
US7915071B2 (en) * 2007-08-30 2011-03-29 Dupont Air Products Nanomaterials, Llc Method for chemical mechanical planarization of chalcogenide materials
FR2932108B1 (fr) * 2008-06-10 2019-07-05 Soitec Polissage de couches de germanium
DE102008059044B4 (de) 2008-11-26 2013-08-22 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe mit einer verspannt-relaxierten Si1-xGex-Schicht
JP5481166B2 (ja) * 2009-11-11 2014-04-23 株式会社クラレ 化学的機械的研磨用スラリー

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170044156A (ko) * 2014-08-22 2017-04-24 캐보트 마이크로일렉트로닉스 코포레이션 게르마늄 화학적 기계적 연마
KR20240141863A (ko) * 2014-12-16 2024-09-27 바스프 에스이 게르마늄을 포함하는 기판의 높은 효과적 연마를 위한 화학 기계적 연마 (cmp) 조성물
KR20170076251A (ko) * 2015-12-24 2017-07-04 솔브레인 주식회사 유기막 연마용 슬러리 조성물 및 이를 이용한 반도체 기판 연마 방법
US9991127B2 (en) 2016-01-15 2018-06-05 Samsung Electronics Co., Ltd. Method of fabricating integrated circuit device by using slurry composition
US11041097B2 (en) 2019-02-11 2021-06-22 Samsung Electronics Co., Ltd. Polishing composition and method of fabricating semiconductor device using the same

Also Published As

Publication number Publication date
TW201323590A (zh) 2013-06-16
WO2013018015A3 (en) 2013-03-28
RU2605941C2 (ru) 2016-12-27
CN103827235A (zh) 2014-05-28
RU2014107763A (ru) 2015-09-10
CN103827235B (zh) 2016-08-17
TWI548728B (zh) 2016-09-11
JP2014529183A (ja) 2014-10-30
EP2742103A4 (en) 2015-03-25
WO2013018015A2 (en) 2013-02-07
US9443739B2 (en) 2016-09-13
US20140170852A1 (en) 2014-06-19
EP2742103A2 (en) 2014-06-18
EP2742103B1 (en) 2016-09-21

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