CN103827235B - 一种制造半导体装置的方法，其包括在包含特定有机化合物的CMP组合物的存在下化学机械抛光元素锗及/或Si1-xGex材料 - Google Patents

一种制造半导体装置的方法，其包括在包含特定有机化合物的CMP组合物的存在下化学机械抛光元素锗及/或Si1-xGex材料 Download PDF

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Publication number
CN103827235B
CN103827235B CN201280038321.XA CN201280038321A CN103827235B CN 103827235 B CN103827235 B CN 103827235B CN 201280038321 A CN201280038321 A CN 201280038321A CN 103827235 B CN103827235 B CN 103827235B
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China
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alkyl
aryl
amino
germanium
alkylaryl
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Chinese (zh)
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CN103827235A (zh
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B·M·诺勒
B·德雷舍尔
C·吉洛特
Y·李
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BASF SE
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BASF SE
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN201280038321.XA 2011-08-01 2012-07-30 一种制造半导体装置的方法，其包括在包含特定有机化合物的CMP组合物的存在下化学机械抛光元素锗及/或Si1-xGex材料 Expired - Fee Related CN103827235B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161513694P 2011-08-01 2011-08-01
US61/513,694 2011-08-01
PCT/IB2012/053877 WO2013018015A2 (en) 2011-08-01 2012-07-30 A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING OF ELEMENTAL GERMANIUM AND/OR Si1-XGeX MATERIAL IN THE PRESENCE OF A CMP COMPOSITION COMPRISING A SPECIFIC ORGANIC COMPOUND

Publications (2)

Publication Number Publication Date
CN103827235A CN103827235A (zh) 2014-05-28
CN103827235B true CN103827235B (zh) 2016-08-17

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Country Status (8)

Country Link
US (1) US9443739B2 (https=)
EP (1) EP2742103B1 (https=)
JP (1) JP2014529183A (https=)
KR (1) KR20140059216A (https=)
CN (1) CN103827235B (https=)
RU (1) RU2605941C2 (https=)
TW (1) TWI548728B (https=)
WO (1) WO2013018015A2 (https=)

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US9238755B2 (en) * 2011-11-25 2016-01-19 Fujima Incorporated Polishing composition
CN105229098B (zh) * 2013-05-15 2017-08-11 巴斯夫欧洲公司 包含n,n,n＇,n＇‑四(2‑羟基丙基)乙二胺或甲磺酸的化学机械抛光组合物
JP6139975B2 (ja) * 2013-05-15 2017-05-31 株式会社フジミインコーポレーテッド 研磨用組成物
EP2810997A1 (en) 2013-06-05 2014-12-10 Basf Se A chemical mechanical polishing (cmp) composition
KR101842033B1 (ko) * 2014-01-06 2018-03-26 한화테크윈 주식회사 그래핀 제조용 조성물 및 이를 이용한 그래핀의 제조 방법
JP6436638B2 (ja) * 2014-03-27 2018-12-12 株式会社フジミインコーポレーテッド 研磨用組成物
JP6094541B2 (ja) * 2014-07-28 2017-03-15 信越半導体株式会社 ゲルマニウムウェーハの研磨方法
US20160053381A1 (en) * 2014-08-22 2016-02-25 Cabot Microelectronics Corporation Germanium chemical mechanical polishing
US9530655B2 (en) * 2014-09-08 2016-12-27 Taiwan Semiconductor Manufacting Company, Ltd. Slurry composition for chemical mechanical polishing of Ge-based materials and devices
US9431261B2 (en) 2014-12-01 2016-08-30 The Boeing Company Removal of defects by in-situ etching during chemical-mechanical polishing processing
JP2018506176A (ja) * 2014-12-16 2018-03-01 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ ゲルマニウムを含む基板の高効率研磨のための化学機械研磨（ｃｍｐ）組成物
US9646841B1 (en) 2015-10-14 2017-05-09 International Business Machines Corporation Group III arsenide material smoothing and chemical mechanical planarization processes
US9916985B2 (en) 2015-10-14 2018-03-13 International Business Machines Corporation Indium phosphide smoothing and chemical mechanical planarization processes
US9646842B1 (en) 2015-10-14 2017-05-09 International Business Machines Corporation Germanium smoothing and chemical mechanical planarization processes
KR102640734B1 (ko) * 2015-12-24 2024-02-27 솔브레인 주식회사 유기막 연마용 슬러리 조성물 및 이를 이용한 반도체 기판 연마 방법
KR102462501B1 (ko) 2016-01-15 2022-11-02 삼성전자주식회사 슬러리 조성물을 이용하는 집적회로 소자의 제조 방법
SG11201900141UA (en) * 2016-08-26 2019-03-28 Ferro Corp Slurry composition and method of selective silica polishing
US10600655B2 (en) * 2017-08-10 2020-03-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten
JP2021089906A (ja) * 2018-03-22 2021-06-10 株式会社フジミインコーポレーテッド ゲルマニウム溶解抑制剤
US11697183B2 (en) 2018-07-26 2023-07-11 Taiwan Semiconductor Manufacturing Co., Ltd. Fabrication of a polishing pad for chemical mechanical polishing
US10920105B2 (en) 2018-07-27 2021-02-16 Taiwan Semiconductor Manufacturing Co., Ltd. Materials and methods for chemical mechanical polishing of ruthenium-containing materials
KR102886739B1 (ko) 2019-02-11 2025-11-17 삼성전자주식회사 연마 조성물 및 이를 사용한 반도체 소자 제조 방법
US12448568B2 (en) * 2022-03-10 2025-10-21 Fujifilm Electronic Materials U.S.A., Inc. Etching compositions
WO2026072400A1 (en) * 2024-09-24 2026-04-02 Entegris, Inc. Cmp composition including alcohol amine molybdenum etch inhibitor

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Also Published As

Publication number Publication date
TW201323590A (zh) 2013-06-16
WO2013018015A3 (en) 2013-03-28
RU2605941C2 (ru) 2016-12-27
CN103827235A (zh) 2014-05-28
RU2014107763A (ru) 2015-09-10
KR20140059216A (ko) 2014-05-15
TWI548728B (zh) 2016-09-11
JP2014529183A (ja) 2014-10-30
EP2742103A4 (en) 2015-03-25
WO2013018015A2 (en) 2013-02-07
US9443739B2 (en) 2016-09-13
US20140170852A1 (en) 2014-06-19
EP2742103A2 (en) 2014-06-18
EP2742103B1 (en) 2016-09-21

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