TWI548012B - 接合半導體元件的系統及方法 - Google Patents

接合半導體元件的系統及方法 Download PDF

Info

Publication number
TWI548012B
TWI548012B TW103134942A TW103134942A TWI548012B TW I548012 B TWI548012 B TW I548012B TW 103134942 A TW103134942 A TW 103134942A TW 103134942 A TW103134942 A TW 103134942A TW I548012 B TWI548012 B TW I548012B
Authority
TW
Taiwan
Prior art keywords
semiconductor
conductor structures
bonding
semiconductor device
conductor
Prior art date
Application number
TW103134942A
Other languages
English (en)
Other versions
TW201519342A (zh
Inventor
羅伯特Ｎ 奇拉克
多明尼克Ａ 迪安傑利斯
Original Assignee
庫利克和索夫工業公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 庫利克和索夫工業公司 filed Critical 庫利克和索夫工業公司
Publication of TW201519342A publication Critical patent/TW201519342A/zh
Application granted granted Critical
Publication of TWI548012B publication Critical patent/TWI548012B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/105—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
    • H01L2224/1134—Stud bumping, i.e. using a wire-bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/114—Manufacturing methods by blanket deposition of the material of the bump connector
    • H01L2224/11444—Manufacturing methods by blanket deposition of the material of the bump connector in gaseous form
    • H01L2224/1145—Physical vapour deposition [PVD], e.g. evaporation, or sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/114—Manufacturing methods by blanket deposition of the material of the bump connector
    • H01L2224/1146—Plating
    • H01L2224/11462—Electroplating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13075—Plural core members
    • H01L2224/1308—Plural core members being stacked
    • H01L2224/13082—Two-layer arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13109—Indium [In] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/13124—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13139—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13144—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/1354—Coating
    • H01L2224/13599—Material
    • H01L2224/136—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/13624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H01L2224/16148—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked the bump connector connecting to a bonding area protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16238—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bonding area protruding from the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/75251—Means for applying energy, e.g. heating means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/75252—Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the bonding head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301—Bonding head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75343—Means for applying energy, e.g. heating means by means of pressure by ultrasonic vibrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75343—Means for applying energy, e.g. heating means by means of pressure by ultrasonic vibrations
    • H01L2224/75347—Piezoelectric transducers
    • H01L2224/75348—Piezoelectric transducers in the lower part of the bonding apparatus, e.g. in the apparatus chuck
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75343—Means for applying energy, e.g. heating means by means of pressure by ultrasonic vibrations
    • H01L2224/75347—Piezoelectric transducers
    • H01L2224/75349—Piezoelectric transducers in the upper part of the bonding apparatus, e.g. in the bonding head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/757—Means for aligning
    • H01L2224/75743—Suction holding means
    • H01L2224/75744—Suction holding means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/757—Means for aligning
    • H01L2224/75743—Suction holding means
    • H01L2224/75745—Suction holding means in the upper part of the bonding apparatus, e.g. in the bonding head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/759—Means for monitoring the connection process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8112—Aligning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8112—Aligning
    • H01L2224/81121—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812—Applying energy for connecting
    • H01L2224/81201—Compression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812—Applying energy for connecting
    • H01L2224/81201—Compression bonding
    • H01L2224/81203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812—Applying energy for connecting
    • H01L2224/81201—Compression bonding
    • H01L2224/81205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812—Applying energy for connecting
    • H01L2224/81201—Compression bonding
    • H01L2224/81205—Ultrasonic bonding
    • H01L2224/81207—Thermosonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/81399—Material
    • H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/81401—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/81409—Indium [In] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/81399—Material
    • H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/81417—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/81424—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/81399—Material
    • H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/81438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/81439—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/81399—Material
    • H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/81438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/81444—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/81399—Material
    • H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/81438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/81447—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81894—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
    • H01L2224/81895—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces between electrically conductive surfaces, e.g. copper-copper direct bonding, surface activated bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81905—Combinations of bonding methods provided for in at least two different groups from H01L2224/818 - H01L2224/81904
    • H01L2224/81906—Specific sequence of method steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1017—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support
    • H01L2225/1023—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support the support being an insulating substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1047—Details of electrical connections between containers
    • H01L2225/1058—Bump or bump-like electrical connections, e.g. balls, pillars, posts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/201—Temperature ranges
    • H01L2924/20102—Temperature range 0 C=<T<60 C, 273.15 K =<T< 333.15K
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/201—Temperature ranges
    • H01L2924/20103—Temperature range 60 C=<T<100 C, 333.15 K =< T< 373.15K
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/201—Temperature ranges
    • H01L2924/20104—Temperature range 100 C=<T<150 C, 373.15 K =< T < 423.15K
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/201—Temperature ranges
    • H01L2924/20105—Temperature range 150 C=<T<200 C, 423.15 K =< T < 473.15K
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/201—Temperature ranges
    • H01L2924/20106—Temperature range 200 C=<T<250 C, 473.15 K =<T < 523.15K
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/201—Temperature ranges
    • H01L2924/20107—Temperature range 250 C=<T<300 C, 523.15K =<T< 573.15K
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/203—Ultrasonic frequency ranges, i.e. KHz
    • H01L2924/20301—Ultrasonic frequency [f] f<25 kHz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/203—Ultrasonic frequency ranges, i.e. KHz
    • H01L2924/20302—Ultrasonic frequency [f] 25 Khz=<f< 50 KHz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/203—Ultrasonic frequency ranges, i.e. KHz
    • H01L2924/20303—Ultrasonic frequency [f] 50 Khz=<f< 75 KHz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/203—Ultrasonic frequency ranges, i.e. KHz
    • H01L2924/20304—Ultrasonic frequency [f] 75 Khz=<f< 100 KHz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/203—Ultrasonic frequency ranges, i.e. KHz
    • H01L2924/20305—Ultrasonic frequency [f] 100 Khz=<f< 125 KHz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/203—Ultrasonic frequency ranges, i.e. KHz
    • H01L2924/20306—Ultrasonic frequency [f] 125 Khz=<f< 150 KHz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/203—Ultrasonic frequency ranges, i.e. KHz
    • H01L2924/20307—Ultrasonic frequency [f] 150 Khz=<f< 175 KHz

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Wire Bonding (AREA)

Description

接合半導體元件的系統及方法
本發明涉及一種半導體封裝的形成方法，更精確來說，係有關於接合半導體元件之改良系統與方法。
傳統半導體封裝通常包含晶片固定過程以及引線接合過程。先進的半導體封裝技術(舉例而言，覆晶技術接合、熱壓接合等)在這個產業中越來越被廣泛地使用。舉例而言，在熱壓接合的技術中，熱能與壓力被用以在半導體元件中形成複數個互連。
雖然先進的半導體封裝技術越來越被廣泛地使用，但是在這些技術中存在著許多限制。舉例而言，包括有關一些先進封裝技術之相對初期的限制。因此，急需提供改良過的系統與方法用以接合半導體元件。
根據本發明之一示例性實施例，提供一種超音波接合半導體元件的方法。該方法包括步驟：(a)校準一第一半導體元件之複數個第一導體結構的表面相對應於一第二半導體元件之複數個第二導體結構的表面，其中該複數個第一導體結構之每一者的表面與該複數個第二導體結構之每一者的表面皆包含鋁；以及(b)超音波接合該複數個第一導體結構中的數個至相對應之該複數個第二導體結構中的數個。
根據本發明之另一示例性實施例，提供一種半導體裝置。該半導體裝置包括：(a)一第一半導體元件，包含複數個第一導體結構，該複數個第一導體結構之每一者的至少一接觸部分包含鋁；以及(b)一第二半導體 元件，包含複數個第二導體結構，該複數個第二導體結構之每一者的至少一接觸部分包含鋁。該複數個第一導體結構之數個中的該等接觸部與相對應之該複數個第二導體結構之該等接觸部中的數個接觸並超音波接合至相對應之該複數個第二導體結構之該等接觸部中的數個。
100、200、300、400、500、600‧‧‧超音波接合機器
102、202、302、402、502、602a、602b、602c、602d‧‧‧半導體晶片
104、204、304、404、504、604a、604b、604c、604d‧‧‧基板
106a、106b、206a、206b、306a、306b、406a、406b、506a、506b‧‧‧下導體結構
106a’、106b’、406a’、506a’‧‧‧變形下導體結構
108、208、308、408、508、660d‧‧‧上半導體元件
110、210、310、410、510、610‧‧‧吸持部分
112a、112b、222a、222b、322a、322b、412a、412b、522a、522b‧‧‧上導體結構
112a’、112b’、222a’、412a’、522a’‧‧‧變形上導體結構
114、414‧‧‧超音波能量
124、224、324、424、524、624‧‧‧接合工具
126‧‧‧箭頭
128a、128b、228、428a、428b、428a’、528a、528b、528a’、628a、628b、628a’、628b’‧‧‧超音波接合
150、250、350、450、550、650‧‧‧支撐結構
160、260、360、460、560‧‧‧下半導體元件
216、316a、316b‧‧‧上鋁接觸結構
216’‧‧‧變形上鋁接觸結構
230、330a、330b‧‧‧銅柱
320a、320b‧‧‧引線迴路
334‧‧‧塗佈/封裝
606a、606a’、606a”、606b、606b’、606b”、612a、612a’、612a”、612b、612b’、612b”‧‧‧導體結構
660a、660b、660c‧‧‧半導體元件
USG‧‧‧超音波產生器
S700~S710‧‧‧步驟
本發明實施例在以下的實施方式中，藉由圖式的配合能夠最清楚地為孰悉本領域所理解。此處需要強調的是，根據通常的實例，並不會將圖式中所有不同的特徵都加以放大縮小。相反地，不同特徵的尺度可任意地放大或縮小以便於清晰閱讀。下列為本發明之圖式：第1A圖至第1C圖係依據本發明一示例性實施例之超音波接合機器之一部份的示意圖，用以描述接合上半導體元件至下半導體元件的結構與方法；第2A圖係依據本發明一示例性實施例之超音波接合機器之一部份的示意圖，用以描述接合上半導體元件至下半導體元件的結構與方法；第2B圖係依據第2A圖中虛線部分的放大圖；第2C圖係依據第2B圖進行超音波接合後的示意圖；第3圖係依據本發明一示例性實施例之超音波接合機器之一部份的示意圖，用以描述接合上半導體元件至下半導體元件的結構與方法；第4A圖係依據本發明一示例性實施例之超音波接合機器之一部份的示意圖，用以描述接合上半導體元件至下半導體元件的結構與方法；第4B圖係依據第4A圖中虛線部分的放大圖；第4C圖係依據第4B圖進行超音波接合後的示意圖；第5A圖係依據本發明一示例性實施例之超音波接合機器之一部份的示意圖，用以描述接合上半導體元件至下半導體元件的結構與方法；第5B圖係依據第5A圖中虛線部分的放大圖；第5C圖係依據第5B圖進行超音波接合後的示意圖； 第6A圖係依據本發明一示例性實施例之超音波接合機器之一部份的示意圖，用以描述接合上半導體元件至下半導體元件的結構與方法；第6B圖係依據第6A圖中虛線部分的放大圖；第6C圖係依據第6A圖的一部份在導體結構間之接觸後的示意圖；以及第7圖係依據本發明一示例性實施例之超音波接合半導體元件的方法之流程圖。
在此處使用的名詞“半導體元件”，係用以表示具有半導體晶片或晶元的任何結構(或配置用以在以下步驟中包括半導體晶片或晶元的任何結構)。舉例而言，半導體元件包括裸露半導體晶片、在基板(舉例而言，引線架、PCB、載體等)上的半導體晶片、封裝半導體裝置、覆晶技術半導體裝置、基板中之內嵌式晶片、半導體晶片堆疊等。再者，半導體元件可包括將被接合的一元件或包含在半導體封裝中的一元件(舉例而言，在堆疊晶片配置中之將被接合的分隔物、基板等)。
根據本發明之某些示例性實施例，提供用以結合半導體結構之具新穎性的技術(與結構)，例如封裝(舉例而言，PoP)結構上的封裝。舉例而言，複數個半導體元件(可為封裝)被安裝在堆疊配置中。每一元件應包括鋁(或鋁合金，或部分為鋁)導體結構，該導體結構將藉由超音波被接合。該技術具有一些優點，舉例而言：相較於其他互連技術(舉例而言，以焊接為主的PoP技術)而言，為較低密度；相較於其他互連技術而言，不會產生錫膏回融；在使用鋁與鋁形成互連的應用時，可在常溫使用超音波進行接合。
第1A圖係顯示超音波接合機器100的部分示意圖，其中包括接合工具124與支撐結構150。如熟知此技術領域之技藝人士所能理解，熱壓接合機器(例如，超音波接合機器100，或其他在實施例中所描述的機器)可包括其他未顯示在圖式中的元件，用以使圖式簡潔。舉例而言，未顯示在圖式中的元件可包括：輸入元件，用以輸入將與外加半導體元件接合之加工物；輸出元件，用以接收包含外加半導體元件之經過處理的加工物；傳 輸系統，用以移動加工物；影像系統，用於加工物的成像以及校正；一接合頭組，用以承載接合工具；一移動系統，用以移動接合頭組；一電腦系統，包含軟體用以操作機器；以及其他元件。
參照第1A圖，上半導體元件108藉由接合工具124的吸持部110被固定住(舉例而言，藉由真空，透過吸持部110之吸持表面的真空埠)。上半導體元件108包括上導體結構112a與112b，其中上導體結構112a與112b配置在上半導體元件108下端的表面上。下半導體元件160包括接合在基板104上(或藉由基板104支撐)的半導體晶片102。下導體結構106a與106b被設置於半導體晶片102上端的表面上。基板104藉由支撐結構150(舉例而言，超音波接合機器100的熱能方塊，超音波接合機器100的壓砧，或其他所需的支撐結構)所支撐。在第1A圖的配置中(預作為接合)，一般而言，上導體結構112a與112b之每一者校準為對準相對應之下導體結構106a與106b。上半導體元件108透過接合工具124的移動往下移動(如第1A圖中所示的箭頭126)。在移動過後，即如第1B圖所示，第1B圖係顯示下導體結構106a與上導體結構112a接觸以及下導體結構106b與上導體結構112b接觸的示意圖。超音波能量114係藉由使用超音波轉換器(未顯示於圖中，但使用“USG”表示之，即超音波產生器(ultrasonic generator))經由接合工具124被施加至上半導體元件108與上導體結構112a與112b。舉例而言，裝載接合工具124的超音波轉換器亦可由超音波接合機器100的接合頭組所裝載。
在超音波接合期間，下導體結構106a與106b在藉由下半導體元件160的支撐下相較的穩定，其中下半導體元件160係藉由支撐結構150所支撐(舉例而言，支撐結構150的支撐表面可包括一或多個真空埠，用以在接合時穩固基板104於支撐結構150上)。超音波能量114(選擇性地外加熱及/或接合能量)可能導致導體結構的部分變形。舉例而言，如第1C圖所示。第1C圖係顯示下導體結構106a與106b以及上導體結構112a與112b部分變形的示意圖。超音波接合分別形成在相對應之導體結構之間。舉例而言，超音波接合128a形成在變形上導體結構112a’與變形下導體結構106a’之間，超音波接合128b形成在變形上導體結構112b’與變形下導體結構106b’之間。下導體結構106a與106b以及上導體結構112a與112b可由 鋁或鋁合金所組成，也可在其接合表面包含鋁。
相對應的下導體結構106a與上導體結構112a以及下導體結構106b與上導體結構112b可在常溫下(在接合過程中未加熱)被接合。舉例而言，額外的熱能可被選擇性地(1)經由接合工具124施加至上半導體元件108，進而在接合過程中加熱上導體結構112a與112b，及/或(2)經由支撐結構150(舉例而言，加熱方塊)施加至下半導體元件160，進而在接合過程中加熱下導體結構106a與106b。此選擇性加熱(舉例而言，透過接合工具及/或支撐結構等)可適用於本發明所描述的任一實施例中。
在第1A圖至第1C圖中所描述的半導體元件160與108的數量可為將被接合在一起之半導體元件的任一數量。在一特定的實例中(亦可應用在本發明所描述的其他實施例中)，下半導體元件160為一處理器(例如行動電話的處理器，即APU(Application processor unit))，而上半導體元件108為將與處理器接合的記憶體裝置，如第1A圖至第1C圖所示。
第1A圖至第1C圖中所示之導體結構(例如106a、112a、106b與112b)為通用結構。該些結構可為其他不同形式，例如，導體柱、立柱凸塊、電鍍導體結構、濺鍍導體結構、引線部分、接合墊、接觸墊等。本發明提供多個圖式描述該等結構的實例。根據本發明之某些實施例中，導體結構的接觸區域(例如，接合表面)包括鋁，其中該接觸區域將與其他導體結構接合。在該等實施例中，導體結構可由鋁或鋁合金(例如銅鋁合金、銅矽鋁合金等)所形成。在其他實例中，導體結構的接觸區域可包括非鋁的導電材質(例如，銅)與鋁(或鋁合金)所構成。在本發明實施例中，若導體結構為鋁，可得知該結構為鋁、鋁合金，或者可在導體結構的接觸區域包含鋁(或鋁合金)。
第2A圖係顯示超音波接合機器200的部分示意圖，其中包括接合工具224與支撐結構250。上半導體元件208藉由接合工具224的吸持部210被固定住(舉例而言，藉由真空)，且包括上導體結構222a與222b(舉例而言，導體鋁墊)，其中上導體結構222a與222b被設置在上半導體元件208下端的表面上。下半導體元件260包括接合在基板204上(或藉由基板204所支撐)的半導體晶片202。下導體結構206a與206b被設置於半導體晶片202上端的表面上。基板204藉由支撐結構250所支撐。在第2A圖中，上 導體結構222a與222b校準為對準(與配置為將藉由超音波接合)相對應之下導體結構206a與206b。下導體結構206a包括配置在半導體晶片202上端表面的銅(Cu)柱230，以及在銅柱230上端表面的上鋁接觸結構216。舉例而言，上鋁接觸結構216可為電鍍或濺鍍至銅柱230上端的表面上。第2B圖係顯示第2A圖之虛線部分的放大示意圖。第2B圖係顯示下導體結構206a的尖端部分與上導體結構222a接觸的示意圖。
超音波能量係藉由使用超音波轉換器(未顯示於圖式中)經由接合工具224被施加至上半導體元件208。第2C圖係顯示超音波能量可能導致導體結構之部分變形的示意圖。超音波接合228形成於變形上導體結構222a’與變形上鋁接觸結構216’之間(如第2C圖所示)。
如熟知此技術領域之技藝人士所能理解，銅柱230(包括藉由電鍍或濺鍍至銅柱上的上鋁接觸結構216)僅為包括鋁之導體結構的一實施例。第2A圖亦顯示另一實例，其為下導體結構206b。下導體結構206b為鋁結構(或鋁合金結構)，例如，鋁引線的一部份、鋁柱等。
第3圖係顯示超音波接合機器300的部分示意圖，其中包括接合工具324與支撐結構350。上半導體元件308藉由接合工具324的吸持部分310被固定住(舉例而言，藉由真空)，且包括上導體結構322a與322b(舉例而言，導體鋁墊)。第3圖係顯示連接至上半導體元件308的封裝半導體裝置(舉例而言，下半導體元件360)之接合。下半導體元件360包括接合至基板304(或由基板304支撐)的半導體晶片302。下導體結構306a與306b被設置於基板304之上端的表面上。基板304可由支撐結構350所支撐。引線迴路320a與320b被接合在半導體晶片302與基板304之間(未顯示於第3圖中，半導體晶片302可為接合至基板304的覆晶，相對於引線迴路互連)。塗佈/封裝334(例如環氧模造物)被覆蓋於半導體晶片302與引線迴圈320a與320b上。如第3圖所示，下導體結構306a與306b的上端部分曝露在塗佈/封裝334之上，以能夠電性連接至上半導體元件308。
在第3圖的配置中，上導體結構322a與322b校準為對準相對應之下導體結構306a與306b。如第3圖所示，下導體結構306a與306b各自在基板304上端的表面上包括相對應的銅柱330a與330b，且在銅柱330a與330b上端的表面上各自包括相對應的上鋁接觸結構316a與316b。上鋁 接觸結構316a與316b可為被電鍍或濺鍍至銅柱330a與330b上端的表面上。如第3圖所示，上半導體元件308透過接合工具324的移動往下移動(如第3圖中所示的箭頭)，使得下導體結構306a與上導體結構322a發生接觸以及使得下導體結構306b與上導體結構322b發生接觸。超音波能量(選擇性地外加熱及/或接合能量)藉由超音波轉換器被施加至上半導體元件308，以分別在上導體結構322a和相對應上鋁接觸結構316a以及上導體結構322b和相對應上鋁接觸結構316b之間形成超音波接合。
第4A圖係顯示超音波接合機器400的部分示意圖，其中包括接合工具424與支撐結構450。上半導體元件408藉由接合工具424的吸持部分410被固定住(舉例而言，藉由真空)，且包括上導體結構412a與412b(舉例而言，經由濺鍍之鋁凸塊、鋁立柱凸塊等)，其中上導體結構412a與412b配置在上半導體元件408下端的表面上。下半導體元件460包括接合在基板404(舉例而言，FR4支撐結構)上(或藉由基板404所支撐)的半導體晶片402。下導體結構406a與406b(舉例而言，經由濺鍍之鋁凸塊、鋁立柱凸塊等)被配置於半導體晶片402上端的表面上。基板404藉由支撐結構450所支撐。在第4A圖中，上導體結構412a與412b校準為對準(且被配置為將藉由超音波接合)相對應之下導體結構406a與406b。第4B圖係顯示上導體結構412a與下導體結構406a(在超音波接合前)之細部的示意圖。在第4A圖中，上半導體元件408透過接合工具424的移動往下移動(如第4A圖中的箭頭所示)，以使得下導體結構406a與上導體結構412a發生接觸以及下導體結構406b與上導體結構412b發生接觸。超音波能量414(選擇性地外加熱及/或接合能量)係藉由使用超音波轉換器被施加至上半導體元件408(舉例而言，經由接合工具424)，以分別在變形上鋁導體結構與相對應變形下鋁接觸結構之間形成超音波接合428a與428b(舉例而言，如第4C圖所示，超音波接合428a’形成於變形上導體結構412a’與變形下導體結構406a’之間)。
第5A圖係顯示超音波接合機器500的部分示意圖，其中包括接合工具524與支撐結構550。上半導體元件508藉由接合工具524的吸持部分510被固定住(舉例而言，藉由真空)，且包括上導體結構522a與522b(舉例而言，導體鋁墊)。下半導體元件560包括接合在基板504(舉例而言，FR4 支撐結構)上(或藉由基板504所支撐)的半導體晶片502。下導體結構506a與506b(舉例而言，經由濺鍍之鋁凸塊、鋁立柱凸塊等)被設置於半導體晶片502上端的表面上。基板504藉由支撐結構550所支撐。在第5A圖中，上導體結構522a與522b校準為對準(且被配置為將藉由超音波接合)相對應之下導體結構506a與506b。第5B圖係顯示上導體結構522a與下導體結構506a(在超音波接合前)之細部的示意圖。在第5A圖中，上半導體元件508透過接合工具524的移動往下移動(如第5A圖中的箭頭所示)以使得下導體結構506a與上導體結構522a發生接觸。超音波能量(選擇性地外加熱及/或接合能量)係藉由使用超音波轉換器被施加至上半導體元件508(舉例而言，經由接合工具524)，以分別在變形上鋁導體結構與相對應變形下鋁接觸結構之間形成超音波接合528a與528b(舉例而言，如第5C圖所示，超音波接合528a’形成於變形上導體結構522a’與變形下導體結構506a’之間)。
第6A圖係顯示超音波接合機器600的部分示意圖，其中包括接合工具624與支撐結構650。在第6A圖中，複數個半導體元件被接合在一起形成堆疊配置，其係依據本發明教導之技藝所完成。特別地，半導體元件660a包括接合在基板604a上(或藉由基板604a所支撐)的半導體晶片602a，其中導體結構606a與606b(舉例而言，經由濺鍍之鋁凸塊、鋁立柱凸塊等)被設置於半導體晶片602a上端的表面上。半導體元件660a藉由支撐結構650所支撐。
另一半導體元件660b(包括接合至基板604b或藉由基板604b支撐的相對應半導體晶片602b，以及包括基板604b上的導體結構612a與612b)被預先接合至半導體元件660a。具體而言，接合工具624預先接合(舉例而言，超音波接合)半導體元件660b至半導體元件660a，使得超音波接合628a與628b分別形成於導體結構612a與606a之間以及612b與606b之間。半導體元件660b也包括了導體結構606a’與606b’，其被以下所描述的步驟接合至半導體元件660c的導體結構。第6B圖係顯示包括變形導體結構612a與606a之超音波接合628a的示意圖。
同樣地，另一半導體元件660c(包括接合至基板604c或藉由基板604c支撐的相對應半導體晶片602c，以及包括基板604c上的導體結構612a與612b)被預先接合至半導體元件660b。具體而言，接合工具624預 先接合(舉例而言，超音波接合)半導體元件660c至半導體元件660b，使得超音波接合628a’與628b’分別形成於導體結構612a’與606a’之間以及612b’與606b’之間。半導體元件660c也包括了導體結構606a”與606b”，其被以下所描述的步驟接合至上半導體元件660d的導體結構。
如第6A圖所示，上半導體元件660d藉由接合工具624的吸持部分610被固定住，且包括接合在基板604d上(或藉由基板604d所支撐)的半導體晶片602d。導體結構612a”與612b”(舉例而言，經由濺鍍之鋁凸塊、鋁立柱凸塊等)被設置於基板604d下端的表面上。導體結構612a”與612b”校準為對準(且被配置為將藉由超音波接合)相對應之導體結構606a”與606b”。上半導體元件660d透過接合工具624的移動往下移動(如第6A圖中的箭頭所示)。隨著上半導體元件660d往下移動後，使得導體結構612a”與606a”之間以及612b”與606b”之間發生接觸(舉例而言，如第6C圖所示，在經由超音波接合之變形前，導體結構612a”與606a”之間接觸的詳細示意圖)。超音波能量係藉由使用超音波轉換器(未顯示於圖式中)經由接合工具624被施加至上半導體元件660d，以分別在導體結構612a”與606a”之間以及612b”與606b”之間形成超音波接合。
本發明已描述特定實施例之上與下鋁導體結構，熟知此技術領域之技藝人士應能理解到上與下鋁導體結構之多樣形狀與設計仍在本發明實施例之技藝的範疇內。
第7圖係顯示依據本發明實施例之接合半導體元件方法的流程圖。如同熟知此技術領域之技藝人士所能理解的，包含在流程圖中的一些步驟可以被省略，也能額外加入其他步驟至流程圖中，而在流程圖中的一些步驟可以調整成不同於本流程圖的順序。在步驟S700中，支撐第一半導體元件(舉例而言，包括在一基板上的半導體晶片)於接合機器的支撐結構上。第一半導體元件(舉例而言，半導體結構上端的表面)包括複數個第一導體結構，其中複數個第一導體結構中之每一者至少部分由鋁所構成(例如：第1A圖中下半導體元件160的下導體結構106a與106b；第2A圖中下半導體元件260的下導體結構206a與206b；第3圖中下半導體元件360的下導體結構306a與306b；第4A圖中下半導體元件460的下導體結構406a與406b；第5A圖中下半導體元件560的下導體結構506a與506b；以及第 6A圖中半導體元件660c的導體結構606a”與606b”)。在步驟S702中，藉由接合機器之接合工具的吸持部分固定第二半導體元件(例如，在相對應圖式中的上導體元件108、208、308、408、508以及660d)。第二半導體元件包括複數個第二導體結構(舉例而言，配置於第二半導體元件下端的表面)，其中複數個第二導體結構中之每一者至少部分由鋁所構成。在步驟S704中，校準複數個第一導體結構與複數個第二導體結構為互相對應(例如，如第1A圖與第6A圖)，且接著互相接觸。在步驟S706中，此步驟為選擇性的，藉由預設的接合力接觸擠壓已校準的複數個第一導體結構與第二導體結構。預設的接合力可為單一接合值，或可為根據接合力表而在接合過程中不斷改變的值。在步驟S708中，此步驟為選擇性的，施加熱能至已校準的複數個第一導體結構及/或第二導體結構。舉例而言，熱能可經由支撐第一半導體元件的支撐結構被施加至第一導體結構。同樣地，熱能可經由固定第二半導體元件的接合工具被施加至第二導體結構。在步驟S710中，藉由超音波能量接合複數個第一導體結構與第二導體結構，以在複數個第一導體結構與第二導體結構之間形成超音波接合。
如同熟知此技術領域之技藝人士將能理解的，本發明實施例在常溫或較低溫度下藉由超音波能量及/或接合力即能順利完成鋁與鋁的接合過程，通常不需要進行加熱。
雖然在本發明實施例中所描述的主要為兩對導體結構進行超音波接合，需了解到的是本發明並不限制於此。在實作中，根據本發明實施例以進行組合的半導體封裝(例如，先進的封裝)可具有任何數量的導體結構，也可具有數百對(或甚至數千對)藉由超音波接合的導體結構。再者，導體結構不需要以成對方式進行接合。舉例而言，一導體結構可以與相對之二者以上的導體結構進行接合。因此，一半導體元件之任一數量的導體結構可藉由超音波接合另一半導體元件之任一數量的導體結構。
雖然在本發明實施例中所描述的主要為透過接合工具(舉例而言，該接合工具結合超音波轉換器)進行傳送超音波能量，需了解到的是本發明並不限制於此。另一方面，超音波能量可藉由任一結構進行傳送，例如，支撐結構。
如同熟知此技術領域之技藝人士將能理解的，超音波接合的細 節可依照特定應用以進行不同變化。因而，此處將針對一些非限制細節進行描述。舉例而言，超音波轉換器的頻率可設計為與導體結構(例如，立柱結構等)的設計具有關聯性，使得超音波轉換器的共振頻率與半導體元件的共振頻率一致，在此情況下，導體結構可進行像懸臂樑一樣的方式動作。在另一實施例中，超音波轉換器可在與半導體元件非共振的方式下操作，其即為單純的“驅動”模式。
舉例而言，施加至超音波轉換器的能量(舉例而言，施加至超音波驅動裝置的壓電晶體/壓電陶瓷)的範圍可為0.1kHz-160kHz、10kHz-120kHz、20kHz-60kHz等。在接合過程中可施加單一頻率或複數個頻率至超音波轉換器(舉例而言，連續不斷、同步或兩者同時)。半導體元件的刷洗可在任一數量的方向上進行，且可透過吸持半導體元件的接合工具進行(如本發明中所描述)、支撐半導體元件的支撐結構進行、或其他種方式進行。特別考慮到此處所描述的實施例(超音波能量透過吸持半導體元件的接合工具被施加)，刷洗以平行或垂直於接合工具縱軸的方向進行(或其他任何方向)。
舉例而言，藉由超音波轉換器施加之震動能量的峰對峰振幅範圍可為0.1um至10um(例如，其具有定壓、定流、或包含但不限制於變流、變壓的回饋控制，或具有根據一或多輸入的比例回饋控制)。
如同本發明實施例中所述，可在超音波接合過程中之至少一部份施加接合力。舉例而言，接合力的大小範圍為0.1kg至100kg。在超音波接合過程中所施加的接合力可為一常數或可為根據接合力表而不斷改變的值。在一受控制之接合力的實施例中，接合力的回饋控制可為定值的、變動的或根據一或多輸入(例如，超音波振幅、時間、速度、變形、溫度等)而呈現比例的。
如同本發明實施例中所述，半導體元件之加熱動作可在超音波接合過程前及/或超音波接合過程中進行。舉例而言，半導體元件之加熱溫度的範圍為20度C至250度C。在超音波接合過程中所施加的熱能(例如，透過接合工具與支撐工具中之一者或同時，或其他元件)可為一常數或可為根據溫度表而不斷改變的值，且可藉由回饋控制以進行控制熱能。
雖然在本發明實施例中所描述的主要為在相對應半導體元件之 鋁導體之間形成超音波接合，需了解到的是本發明並不限制於此。換言之，本發明所教導之技藝亦可應用在不同組成成分之導體結構間形成超音波接合。舉例而言，可應用結合在導體結構上之材質的列表包括：鋁接合銅(舉例而言，在一半導體元件之鋁導體結構與另一半導體元件之銅導體結構間形成超音波接合)；無鉛銲料(例如，主要為錫所組成)接合銅；無鉛銲料接合鋁；銅接合銅；鋁接合銀；銅接合銀；鋁接合金；以及銅接合金。當然，導體結構構成物(舉例而言，銦)之其他種組合也在考慮的範疇之內。
上述實施例僅例示性說明本發明之功效，而非用於限制本發明，任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下，對上述該些實施例進行修飾與改變。此外，在上述該些實施例中之元件的數量僅為例示性說明，亦非用於限制本發明。因此本發明之權利保護範圍，應如以下之申請專利範圍所列。
本專利申請案係於2013年10月8日提出申請之美國臨時申請案序號61/888,203之申請案，於此將其併入至本專利申請案以為參考。
S700~S710‧‧‧步驟

Claims (24)

  1. 一種超音波接合半導體元件的方法，包括：(a)校準一第一半導體元件之複數個第一導體結構的表面相對應於一第二半導體元件之複數個第二導體結構的表面，其中該複數個第一導體結構之每一者的表面與該複數個第二導體結構之每一者的表面皆包含鋁；以及(b)超音波接合該複數個第一導體結構中的數個至相對應之該複數個第二導體結構中的數個；其中該複數個第一導體結構與該複數個第二導體結構中之至少一者具有複數個銅柱結構，該複數個銅柱結構電鍍或濺鍍有包含鋁的材質。
  2. 如申請專利範圍第1項所述之超音波接合半導體元件的方法，其中該第一半導體元件為一半導體晶片。
  3. 如申請專利範圍第1項所述之超音波接合半導體元件的方法，其中該第一半導體元件與該第二半導體元件中之每一者為一相對應的半導體晶片。
  4. 如申請專利範圍第1項所述之超音波接合半導體元件的方法，其中該第一半導體元件包含一半導體晶片。
  5. 如申請專利範圍第1項所述之超音波接合半導體元件的方法，其中該第一半導體元件與該第二半導體元件中之每一者具有一相對應的半導體晶片。
  6. 如申請專利範圍第1項所述之超音波接合半導體元件的方法，更包括移動該第一半導體元件往該第二半導體元件的方向，使得該複數個第一導體結構的下表面接觸相對應之該複數個第二導體結構的上表面。
  7. 如申請專利範圍第1項所述之超音波接合半導體元件的方法，更包括 在步驟(b)過程中之至少一部份施加壓力至該第一半導體元件與該第二半導體元件之間。
  8. 如申請專利範圍第1項所述之超音波接合半導體元件的方法，更包括在步驟(b)過程中使該複數個第一導體結構變形。
  9. 如申請專利範圍第1項所述之超音波接合半導體元件的方法，其中步驟(b)在常溫中實施。
  10. 如申請專利範圍第1項所述之超音波接合半導體元件的方法，更包括在步驟(b)過程中之至少一部份加熱該第一半導體元件與該第二半導體元件中之至少一者。
  11. 如申請專利範圍第1項所述之超音波接合半導體元件的方法，更包括在步驟(b)過程中之至少一部份藉由固定該第一半導體元件的一接合工具加熱該第一半導體元件。
  12. 如申請專利範圍第1項所述之超音波接合半導體元件的方法，更包括在步驟(b)過程中之至少一部份藉由在步驟(b)過程中支撐該第二半導體元件的一支撐結構加熱該第二半導體元件。
  13. 如申請專利範圍第1項所述之超音波接合半導體元件的方法，其中該複數個第一導體結構與該複數個第二導體結構中之至少一者包含複數個鋁引線部。
  14. 如申請專利範圍第1項所述之超音波接合半導體元件的方法，其中該複數個第一導體結構與該複數個第二導體結構中之至少一者包含複數個鋁凸塊。
  15. 如申請專利範圍第1項所述之超音波接合半導體元件的方法，其中步驟(b)包括在步驟(b)過程中使用固定該第一半導體元件的一接合工具以超音波接合該複數個第一導體結構中的數個至相對應之該複數個第二導體結構中的數個。
  16. 如申請專利範圍第15項所述之超音波接合半導體元件的方法，其中在步驟(b)過程中該接合工具結合一超音波轉換器用於提供超音波能量。
  17. 如申請專利範圍第15項所述之超音波接合半導體元件的方法，其中在步驟(b)過程中該接合工具利用真空保持該第一半導體元件。
  18. 一種半導體裝置，包括：(a)一第一半導體元件，包含複數個第一導體結構，該複數個第一導體結構之每一者的至少一接觸部皆包含鋁；(b)一第二半導體元件，包含複數個第二導體結構，該複數個第二導體結構之每一者的至少一接觸部皆包含鋁；其中，該複數個第一導體結構之數個中的該等接觸部與相對應之該複數個第二導體結構之該等接觸部中的數個接觸並超音波接合至相對應之該複數個第二導體結構之該等接觸部中的數個；其中該複數個第一導體結構與該複數個第二導體結構中之至少一者為複數個銅柱結構，該複數個銅柱結構至少一部份電鍍或濺鍍有包含鋁的材質。
  19. 如申請專利範圍第18項所述之半導體裝置，其中該第一半導體元件為一半導體晶片。
  20. 如申請專利範圍第18項所述之半導體裝置，其中該第一半導體元件之每一者與該第二半導體元件之每一者為一相對應的半導體晶片。
  21. 如申請專利範圍第18項所述之半導體裝置，其中該第一半導體元件包含一半導體晶片。
  22. 如申請專利範圍第18項所述之半導體裝置，其中該第一半導體元件之每一者與該第二半導體元件之每一者包含一相對應半導體晶片。
  23. 如申請專利範圍第18項所述之半導體裝置，其中該複數個第一導體結構與該複數個第二導體結構中之至少一者為複數個鋁引線部。
  24. 如申請專利範圍第18項所述之半導體裝置，其中該複數個第一導體結構與該複數個第二導體結構中之至少一者為複數個鋁凸塊。
TW103134942A 2013-10-08 2014-10-07 接合半導體元件的系統及方法 TWI548012B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201361888203P 2013-10-08 2013-10-08

Publications (2)

Publication Number Publication Date
TW201519342A TW201519342A (zh) 2015-05-16
TWI548012B true TWI548012B (zh) 2016-09-01

Family

ID=52776319

Family Applications (3)

Application Number Title Priority Date Filing Date
TW107111660A TWI658523B (zh) 2013-10-08 2014-10-07 接合半導體元件的系統及方法
TW103134942A TWI548012B (zh) 2013-10-08 2014-10-07 接合半導體元件的系統及方法
TW105120538A TWI629732B (zh) 2013-10-08 2014-10-07 接合半導體元件的系統及方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW107111660A TWI658523B (zh) 2013-10-08 2014-10-07 接合半導體元件的系統及方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW105120538A TWI629732B (zh) 2013-10-08 2014-10-07 接合半導體元件的系統及方法

Country Status (2)

Country Link
US (5) US9136240B2 (zh)
TW (3) TWI658523B (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9136240B2 (en) * 2013-10-08 2015-09-15 Kulicke And Soffa Industries, Inc. Systems and methods for bonding semiconductor elements
US9780065B2 (en) 2013-10-08 2017-10-03 Kulicke And Soffa Industries, Inc. Systems and methods for bonding semiconductor elements
US9437577B2 (en) * 2014-05-09 2016-09-06 Mediatek Inc. Package on package structure with pillar bump pins and related method thereof
US9980463B2 (en) * 2015-02-26 2018-05-29 Petzila Inc. Device for and method of dispensing variable shaped items
JP6602544B2 (ja) * 2015-03-06 2019-11-06 三菱重工業株式会社 接合方法
US10381321B2 (en) 2017-02-18 2019-08-13 Kulicke And Soffa Industries, Inc Ultrasonic transducer systems including tuned resonators, equipment including such systems, and methods of providing the same
TWI791013B (zh) * 2017-03-13 2023-02-01 美商庫利克和索夫工業公司 用於對半導體元件進行超音波接合的方法
US11784160B2 (en) 2020-09-23 2023-10-10 International Business Machines Corporation Asymmetric die bonding
US11937979B2 (en) 2021-04-27 2024-03-26 Kulicke And Soffa Industries, Inc. Ultrasonic transducers, wire bonding machines including ultrasonic transducers, and related methods

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040157407A1 (en) * 2003-02-07 2004-08-12 Ziptronix Room temperature metal direct bonding
US20040214406A1 (en) * 2002-07-25 2004-10-28 Nec Electronics Corporation Bonding method and bonding apparatus
TWI279887B (en) * 2001-08-24 2007-04-21 Chipbond Technology Corp Manufacturing method of flip chip electronic device
TW200746332A (en) * 2006-05-11 2007-12-16 Fujitsu Ltd Method of manufacturing a semiconductor device
TW201023305A (en) * 2008-12-02 2010-06-16 Great Team Backend Foundry Inc Flip-chip package structure and the die attach method thereof
CN202394859U (zh) * 2011-11-29 2012-08-22 日月光半导体（上海）股份有限公司 半导体封装构造

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5880010A (en) * 1994-07-12 1999-03-09 Sun Microsystems, Inc. Ultrathin electronics
JP2005260053A (ja) * 2004-03-12 2005-09-22 Nec Electronics Corp 半導体装置及び半導体装置の製造方法
JP4768343B2 (ja) 2005-07-27 2011-09-07 株式会社デンソー 半導体素子の実装方法
US7973310B2 (en) * 2008-07-11 2011-07-05 Chipmos Technologies Inc. Semiconductor package structure and method for manufacturing the same
US9136240B2 (en) * 2013-10-08 2015-09-15 Kulicke And Soffa Industries, Inc. Systems and methods for bonding semiconductor elements

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI279887B (en) * 2001-08-24 2007-04-21 Chipbond Technology Corp Manufacturing method of flip chip electronic device
US20040214406A1 (en) * 2002-07-25 2004-10-28 Nec Electronics Corporation Bonding method and bonding apparatus
US20040157407A1 (en) * 2003-02-07 2004-08-12 Ziptronix Room temperature metal direct bonding
TW200746332A (en) * 2006-05-11 2007-12-16 Fujitsu Ltd Method of manufacturing a semiconductor device
TW201023305A (en) * 2008-12-02 2010-06-16 Great Team Backend Foundry Inc Flip-chip package structure and the die attach method thereof
CN202394859U (zh) * 2011-11-29 2012-08-22 日月光半导体（上海）股份有限公司 半导体封装构造

Also Published As

Publication number Publication date
US20160254252A1 (en) 2016-09-01
TW201519342A (zh) 2015-05-16
US10312216B2 (en) 2019-06-04
TWI658523B (zh) 2019-05-01
US9905530B2 (en) 2018-02-27
US20150097285A1 (en) 2015-04-09
US20150348951A1 (en) 2015-12-03
US9136240B2 (en) 2015-09-15
TWI629732B (zh) 2018-07-11
US20170179072A1 (en) 2017-06-22
US20180182733A1 (en) 2018-06-28
US9633981B2 (en) 2017-04-25
TW201637107A (zh) 2016-10-16
US9362247B2 (en) 2016-06-07
TW201830542A (zh) 2018-08-16

Similar Documents

Publication Publication Date Title
TWI548012B (zh) 接合半導體元件的系統及方法
JP5334843B2 (ja) 電子部品装着装置および電子部品装着方法
US10297568B2 (en) Systems and methods for bonding semiconductor elements
US7963310B2 (en) Method for connecting electronic components, method for forming bump and conductive connection film and fabrication apparatus for electronic component mounted body, bump and conductive connection film
WO2006019670A2 (en) Vibratable die attachment tool
TWI791013B (zh) 用於對半導體元件進行超音波接合的方法
US9779965B2 (en) Systems and methods for bonding semiconductor elements
JP5476891B2 (ja) 超音波フリップチップ実装方法および超音波実装装置
TWI752187B (zh) 用於對半導體元件進行接合的系統及其方法
JP2010258302A (ja) 超音波フリップチップ実装方法およびそれに用いられる基板
JP2006332080A (ja) 超音波フリップチップ実装装置
JP5637249B2 (ja) 超音波接合方法
JP2004303952A (ja) 接合方法および接合装置
JP2005353672A (ja) フリップチップ実装方法
JP2002252252A (ja) 超音波フリップチップ接続用半導体実装装置および超音波フリップチップ接続方法
JP2008016668A (ja) 半導体装置の製造方法