TWI547574B - 殼體及其製備方法 - Google Patents

殼體及其製備方法 Download PDF

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TWI547574B
TWI547574B TW102122691A TW102122691A TWI547574B TW I547574 B TWI547574 B TW I547574B TW 102122691 A TW102122691 A TW 102122691A TW 102122691 A TW102122691 A TW 102122691A TW I547574 B TWI547574 B TW I547574B
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張春杰
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富智康（香港）有限公司
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Description

殼體及其製備方法
本發明涉及一種殼體及其製備方法，尤其涉及一種具有黃色釉膜外觀的殼體及其製備方法。
為了使電子裝置的殼體具有豐富色彩，目前主要藉由陽極氧化、烤漆、烤瓷等工藝製備裝飾性塗層。相比該等傳統工藝，PVD鍍膜技術更加綠色環保，且採用PVD鍍膜技術可於產品殼體表面形成具有金屬質感的裝飾性色彩層。
然而習知技術中，利用PVD鍍膜技術於殼體表面形成的膜層的色彩非常有限，目前能夠廣泛製備和使用的PVD膜層主要為金黃色、黑色、白色等色系，而且習知之黃色系PVD膜層硬度較低，容易被磨損。
有鑒於此，本發明提供一種具有黃色釉膜外觀且耐磨損的殼體。
另外，本發明還提供一種上述殼體的製備方法。
一種殼體，包括基體，該殼體還包括形成於該基體表面的打底層、形成於打底層表面的過渡層及形成於該過渡層表面的色彩層，該過渡層為氧化鋁層，該色彩層為碳氮化鈦鋯層，該色彩層呈現的色度區域於CIE LAB表色系統的L*座標介於70至80之間，a*座標介於10至15之間，b*座標介於22至30之間。
一種殼體的製備方法，包括如下步驟：
提供基體；
藉由磁控濺射方法於基體表面沉積打底層，該打底層為鈦鋯合金層；
藉由多弧離子鍍於所述打底層上沉積過渡層，該過渡層為氧化鋁層；
藉由磁控濺射方法於所述過渡層上沉積色彩層，該色彩層為碳氮化鈦鋯層，該色彩層呈現的色度區域於CIE LAB表色系統的L*座標介於70至80之間，a*座標介於10至15之間，b*座標介於22至30之間。
上述殼體的製備方法藉由磁控濺射方法形成所述由碳氮化鈦鋯組成的色彩層，使該色彩層呈現穩定的黃色並且具有很好的耐磨性能。該過渡層藉由多弧離子鍍形成，沉積速度快，且使過渡層與打底層具有較高的結合力，而色彩層採用磁控濺射方法形成，使色彩層比較細膩、光滑，具有仿陶瓷釉膜的外觀。
圖1係本發明較佳實施例殼體的剖面示意圖。
圖2係本發明較佳實施例鍍膜件的製備方法中所用真空鍍膜設備的結構示意圖。
請參閱圖1，本發明較佳實施例的殼體10包括基體11、形成於基體11上的打底層13、形成於打底層13上的過渡層15及形成於過渡層15上的色彩層17。該色彩層17肉眼直觀呈黃色。
基體11的材質可為不銹鋼或模具鋼。
該打底層13由鈦金屬與鋯金屬組成，其為一鈦鋯合金層。打底層13中，鈦的品質百分含量為55%-70%，較佳為60%。打底層13的厚度大約為0.2μm-0.4μm。打底層13可提高過渡層15與基體11的結合力。
該過渡層15為氧化鋁（Al2 O3 ）層。過渡層15具有較高的硬度，有利於提高殼體10表面膜層的整體硬度。過渡層15的厚度大約為0.4μm-0.8μm。過渡層15呈灰色，其不會幹擾色彩層17的顏色。
所述色彩層17為碳氮化鈦鋯（TiZrCN）層。該色彩層17肉眼直觀呈現黃色，其呈現的色度區域於CIE LAB表色系統的L*座標介於70至80之間，a*座標介於10至15之間，b*座標介於22至30之間。色彩層17包括碳氮化鈦（TiCN）相和碳氮化鋯（ZrCN）相，其中碳氮化鋯相具有較高的硬度，可提高色彩層17的耐磨性能。色彩層17的厚度可為1.2μm至2.0μm。
所述打底層13及色彩層17藉由磁控濺射方法形成，該過渡層15藉由多弧離子鍍方法形成。
本發明較佳實施例的上述殼體10的製作方法，包括以下步驟：
提供一基體11。基體11的材質可為金屬，如不銹鋼或模具鋼。
藉由磁控濺射於基體11的表面沉積該打底層13。
磁控濺射沉積該打底層13係於一真空鍍膜設備100（參圖2）中進行。該真空鍍膜設備100為多功能鍍膜設備，其可進行多弧離子鍍及磁控濺射。該真空鍍膜設備100包括真空室20、位於真空室20內的轉架30、用以對真空室20抽真空的真空抽氣系統40、以及若干個弧源裝置50。真空室20中還設置有若干磁控鈦靶61、若干磁控鋯靶62及置於弧源裝置50的陰極弧源位置上的若干鋁靶63。沉積該打底層13時，將基體11固定於所述轉架30上。真空室20被抽真空至3×10-3 Pa-8×10-3P a後，向真空室20內充入流量為100sccm（標準狀態毫升/分鐘）的氬氣。調節真空室內20溫度為160℃-200℃。對所述磁控鈦靶61及磁控鋯靶62施加250V的負偏壓，設置偏壓電源的佔空比為50%。開啟所述磁控鈦靶61及磁控鋯靶62的電源，並調節電源功率均為6kW-8kW，對基體11濺射8-15分鐘，以於該基體11表面形成所述由鈦鋯合金組成的打底層13。
藉由多弧離子鍍於所述打底層13上沉積該過渡層15。多弧離子鍍製備該過渡層15係於所述真空鍍膜設備100中進行。形成有所述打底層13的基體11固定於所述轉架30上。繼續對真空室20抽真空並向真空室20充入流量為100sccm的氬氣，同時，向真空室20通入流量為150sccm-200sccm的氧氣，對所述鋁靶63施加200V的負偏壓，設置偏壓電源的佔空比為50%。開啟鋁靶63的電源，並調節電源的電壓為15V-35V，電流為40A-70A，以於打底層13上沉積所述由氧化鋁形成的過渡層15，沉積時間為50-60分鐘。
然後，藉由磁控濺射於所述過渡層15上沉積該色彩層17。磁控濺射沉積該色彩層17係於所述真空鍍膜設備100中進行。形成有所述打底層13及過渡層15的基體11固定於所述轉架30上。繼續對真空室20抽真空並向真空室20充入流量為100sccm的氬氣，同時，向真空室20通入流量為200sccm-230sccm的氮氣，以及流量為200sccm-230sccm的乙炔（C2 H2 ）氣體，對所述磁控鈦靶61及磁控鋯靶62施加250V的負偏壓，設置偏壓電源的佔空比為40%。開啟磁控鈦靶61及磁控鋯靶62的電源，並調節電源功率均為5kW-10kW，以於過渡層15上沉積所述由TiCN陶瓷相及ZrCN陶瓷組成的色彩層17，沉積時間為35-40分鐘。沉積該色彩層17時，佔空比小於沉積打底層13及過渡層15的佔空比，佔空比變小，對應的沉積速率相對降低，有利於提高膜層的結合力。
下麵結合具體實施例，對本發明進行進一步詳細說明。
實施例
將不銹鋼材質的基體11放入真空鍍膜設備100中，磁控濺射打底層13。基體11固定於所述轉架30上。真空室20被抽真空至5×10-3 Pa後，向真空室20內充入流量為100sccm（標準狀態毫升/分鐘）的氬氣。調節真空室內20溫度為180℃。對所述磁控鈦靶61及磁控鋯靶62施加250V的負偏壓，設置偏壓電源的佔空比為50%。開啟所述磁控鈦靶61及磁控鋯靶62的電源，並調節電源功率均為8kW，對基體11濺射8分鐘，於該基體11表面形成由鈦鋯合金組成的打底層13。打底層13中鈦的品質含量為60%。
多弧離子鍍沉積該過渡層15。繼續對真空室20抽真空並向真空室20充入流量為100sccm的氬氣，同時，向真空室20通入流量為160sccm的氧氣，對所述鋁靶63施加200V的負偏壓，設置偏壓電源的佔空比為50%。開啟鋁靶63的電源，並調節電源的電壓為20V，對應電流為60A-70A，於打底層13上沉積所述由氧化鋁形成的過渡層15，沉積時間為50分鐘。
磁控濺射沉積該色彩層17。磁繼續對真空室20抽真空並向真空室20充入流量為100sccm的氬氣，同時，向真空室20通入流量為220sccm的氮氣，以及流量為220sccm的乙炔氣體，對所述磁控鈦靶61及磁控鋯靶62施加250V的負偏壓，設置偏壓電源的佔空比為40%。開啟磁控鈦靶61及磁控鋯靶62的電源，並調節電源功率均為6kW，以於過渡層15上沉積所述由TiCN陶瓷相及ZrCN陶瓷組成的色彩層17，沉積時間為40分鐘。
本發明殼體10可為筆記型電腦、移動通訊裝置、個人數位助理等電子裝置的殼體，或為其他裝飾類產品的殼體。
所述殼體10的製備方法藉由磁控濺射方法於形成所述色彩層17時，藉由對靶材的選取，同時對反應氣體氮氣和乙炔流量的設計和濺射時間的控制，從而使色彩層17呈現穩定的黃色並且具有很好的耐磨性能。該過渡層15藉由多弧離子鍍形成，沉積速度快，且使過渡層15與打底層13具有較高的結合力。而色彩層17採用磁控濺射方法形成，使色彩層17比較細膩、光滑，具有仿陶瓷的外觀。
可以理解，所述打底層13及過渡層15也可以省略，此時，該色彩層17可直接形成於基體11的表面上。
10‧‧‧殼體
11‧‧‧基體
13‧‧‧打底層
15‧‧‧過渡層
17‧‧‧色彩層
100‧‧‧真空鍍膜設備
20‧‧‧真空室
30‧‧‧轉架
40‧‧‧真空抽氣系統
50‧‧‧弧源裝置
61‧‧‧磁控鈦靶
62‧‧‧磁控鋯靶
63‧‧‧鋁靶
無
10‧‧‧殼體
11‧‧‧基體
13‧‧‧打底層
15‧‧‧過渡層
17‧‧‧色彩層

Claims (10)

  1. 一種殼體，包括基體，其特徵在於：該殼體還包括形成於該基體表面的打底層、形成於打底層表面的過渡層及形成於該過渡層表面的色彩層，該過渡層為氧化鋁層，該色彩層為碳氮化鈦鋯層，該色彩層呈現的色度區域於CIE LAB表色系統的L*座標介於70至80之間，a*座標介於10至15之間，b*座標介於22至30之間。
  2. 如申請專利範圍第1項所述之殼體，其中該打底層為鈦鋯合金層。
  3. 如申請專利範圍第1項所述之殼體，其中該過渡層藉由多弧離子鍍形成。
  4. 如申請專利範圍第1項所述之殼體，其中該色彩層藉由磁控濺射方法形成。
  5. 如申請專利範圍第1項所述之殼體，其中該基體為不銹鋼或模具鋼。
  6. 一種殼體，包括基體，其改良在於：該殼體還包括形成於該基體表面的色彩層，該色彩層為碳氮化鈦鋯層，該色彩層呈現的色度區域於CIE LAB表色系統的L*座標介於70至80之間，a*座標介於10至15之間，b*座標介於22至30之間。
  7. 一種殼體的製備方法，包括如下步驟：
    提供基體；
    藉由磁控濺射方法於基體表面沉積打底層，該打底層為鈦鋯合金層；
    藉由多弧離子鍍於所述打底層上沉積過渡層，該過渡層為氧化鋁層；
    藉由磁控濺射方法於所述過渡層上沉積色彩層，該色彩層為碳氮化鈦鋯層，該色彩層呈現的色度區域於CIE LAB表色系統的L*座標介於70至80之間，a*座標介於10至15之間，b*座標介於22至30之間。
  8. 如申請專利範圍第7項所述之殼體的製備方法，其中所述磁控濺射沉積該打底層採用鈦靶和鋯靶。
  9. 如申請專利範圍第7項所述之殼體的製備方法，其中所述多弧離子鍍沉積該過渡層採用鋁靶及採用氧氣為反應氣體，氧氣的流量為150sccm-200sccm。
  10. 如申請專利範圍第7項所述之殼體的製備方法，其中所述磁控濺射沉積該色彩層採用鈦靶和鋯靶，採用氮氣和乙炔為反應氣體，氮氣的流量為200sccm-230sccm，乙炔的流量為200sccm-230sccm。
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