TWI539022B - Sputtering apparatus and sputtering film forming method - Google Patents

Sputtering apparatus and sputtering film forming method Download PDF

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Publication number
TWI539022B
TWI539022B TW102119920A TW102119920A TWI539022B TW I539022 B TWI539022 B TW I539022B TW 102119920 A TW102119920 A TW 102119920A TW 102119920 A TW102119920 A TW 102119920A TW I539022 B TWI539022 B TW I539022B
Authority
TW
Taiwan
Prior art keywords
substrate
magnet
movement
film
target
Prior art date
Application number
TW102119920A
Other languages
English (en)
Chinese (zh)
Other versions
TW201410901A (zh
Inventor
Masao Sasaki
Original Assignee
Canon Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp filed Critical Canon Anelva Corp
Publication of TW201410901A publication Critical patent/TW201410901A/zh
Application granted granted Critical
Publication of TWI539022B publication Critical patent/TWI539022B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
TW102119920A 2012-06-08 2013-06-05 Sputtering apparatus and sputtering film forming method TWI539022B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012131132 2012-06-08
PCT/JP2013/001595 WO2013183202A1 (ja) 2012-06-08 2013-03-12 スパッタリング装置およびスパッタリング成膜方法

Publications (2)

Publication Number Publication Date
TW201410901A TW201410901A (zh) 2014-03-16
TWI539022B true TWI539022B (zh) 2016-06-21

Family

ID=49711613

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102119920A TWI539022B (zh) 2012-06-08 2013-06-05 Sputtering apparatus and sputtering film forming method

Country Status (5)

Country Link
JP (1) JP6058656B2 (ko)
KR (2) KR101986920B1 (ko)
CN (1) CN104364418B (ko)
TW (1) TWI539022B (ko)
WO (1) WO2013183202A1 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106498353A (zh) * 2015-09-08 2017-03-15 深圳莱宝高科技股份有限公司 一种磁控溅射方法及装置
WO2017187500A1 (ja) 2016-04-26 2017-11-02 東芝三菱電機産業システム株式会社 成膜装置
JP7242293B2 (ja) * 2018-12-27 2023-03-20 キヤノントッキ株式会社 成膜装置、成膜方法、および電子デバイスの製造方法
JPWO2020137145A1 (ja) * 2018-12-28 2021-09-09 株式会社アルバック 成膜装置及び成膜方法
CN113451190B (zh) * 2020-04-21 2022-05-03 重庆康佳光电技术研究院有限公司 一种半导体的转移装置及转移方法
US11862502B2 (en) 2020-04-21 2024-01-02 Chongqing Konka Photoelectric Technology Research Institute Co., Ltd. Device, apparatus, and method for semiconductor transfer
CN112708866B (zh) * 2020-12-23 2023-03-28 青岛大学 基于磁控溅射技术的柔性基材连续镀膜机及其镀膜方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4202459B2 (ja) * 1998-03-02 2008-12-24 キヤノンアネルバ株式会社 スパッタ成膜装置およびスパッタ成膜方法
JP2967191B2 (ja) * 1998-03-05 1999-10-25 工業技術院長 超音波クラスター発生方法及び装置
JP4290323B2 (ja) * 2000-11-01 2009-07-01 キヤノンアネルバ株式会社 スパッタ成膜方法
JP4246547B2 (ja) * 2003-05-23 2009-04-02 株式会社アルバック スパッタリング装置、及びスパッタリング方法
JP4657183B2 (ja) * 2006-09-28 2011-03-23 株式会社アルバック スパッタリング装置、スパッタリング方法
US20100294649A1 (en) * 2008-01-21 2010-11-25 Ulvac, Inc. Sputtering film forming method and sputtering film forming apparatus
CN103348038B (zh) * 2011-02-08 2015-05-20 夏普株式会社 磁控溅射装置、磁控溅射装置的控制方法和成膜方法

Also Published As

Publication number Publication date
CN104364418A (zh) 2015-02-18
CN104364418B (zh) 2016-06-15
KR101944149B1 (ko) 2019-04-17
KR20150023629A (ko) 2015-03-05
KR20170010070A (ko) 2017-01-25
KR101986920B1 (ko) 2019-06-07
WO2013183202A1 (ja) 2013-12-12
JP6058656B2 (ja) 2017-01-11
JPWO2013183202A1 (ja) 2016-01-28
TW201410901A (zh) 2014-03-16

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