TWI536869B - 用於調整一位置的方法與裝置及計量系統 - Google Patents

用於調整一位置的方法與裝置及計量系統 Download PDF

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Publication number
TWI536869B
TWI536869B TW101127771A TW101127771A TWI536869B TW I536869 B TWI536869 B TW I536869B TW 101127771 A TW101127771 A TW 101127771A TW 101127771 A TW101127771 A TW 101127771A TW I536869 B TWI536869 B TW I536869B
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TW
Taiwan
Prior art keywords
target
energy
mixture
enhanced
sensors
Prior art date
Application number
TW101127771A
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English (en)
Chinese (zh)
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TW201311057A (zh
Inventor
馬修 葛拉漢
史蒂芬 陳
吉姆 克羅奇
伊格爾 佛蒙柯維
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Ａｓｍｌ荷蘭公司
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Application filed by Ａｓｍｌ荷蘭公司 filed Critical Ａｓｍｌ荷蘭公司
Publication of TW201311057A publication Critical patent/TW201311057A/zh
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Publication of TWI536869B publication Critical patent/TWI536869B/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
    • H05G2/0082—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam
    • H05G2/0086—Optical arrangements for conveying the laser beam to the plasma generation location

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • X-Ray Techniques (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lasers (AREA)
TW101127771A 2011-08-19 2012-08-01 用於調整一位置的方法與裝置及計量系統 TWI536869B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161525561P 2011-08-19 2011-08-19
US13/249,504 US8993976B2 (en) 2011-08-19 2011-09-30 Energy sensors for light beam alignment

Publications (2)

Publication Number Publication Date
TW201311057A TW201311057A (zh) 2013-03-01
TWI536869B true TWI536869B (zh) 2016-06-01

Family

ID=47711970

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101127771A TWI536869B (zh) 2011-08-19 2012-08-01 用於調整一位置的方法與裝置及計量系統

Country Status (7)

Country Link
US (1) US8993976B2 (cg-RX-API-DMAC10.html)
EP (1) EP2745650A4 (cg-RX-API-DMAC10.html)
JP (1) JP5977828B2 (cg-RX-API-DMAC10.html)
KR (1) KR101949839B1 (cg-RX-API-DMAC10.html)
CN (1) CN103748967B (cg-RX-API-DMAC10.html)
TW (1) TWI536869B (cg-RX-API-DMAC10.html)
WO (1) WO2013028272A1 (cg-RX-API-DMAC10.html)

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JP6649958B2 (ja) 2015-10-02 2020-02-19 ギガフォトン株式会社 極端紫外光生成システム
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JPWO2017090167A1 (ja) 2015-11-26 2018-09-13 ギガフォトン株式会社 極端紫外光生成装置
JP6661669B2 (ja) * 2016-01-28 2020-03-11 ギガフォトン株式会社 極端紫外光生成装置
WO2017154111A1 (ja) * 2016-03-08 2017-09-14 ギガフォトン株式会社 極端紫外光生成装置
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US10149375B2 (en) * 2016-09-14 2018-12-04 Asml Netherlands B.V. Target trajectory metrology in an extreme ultraviolet light source
JP6775606B2 (ja) 2017-01-12 2020-10-28 ギガフォトン株式会社 極端紫外光生成システム
WO2018131146A1 (ja) * 2017-01-13 2018-07-19 ギガフォトン株式会社 極端紫外光生成システム
NL2020474A (en) * 2017-03-20 2018-09-21 Asml Netherlands Bv Lithographic system, euv radiation source, lithographic scanning apparatus and control system
JP6866471B2 (ja) 2017-03-27 2021-04-28 ギガフォトン株式会社 Ｅｕｖ光生成装置
CN111566563A (zh) 2017-10-26 2020-08-21 Asml荷兰有限公司 用于监测等离子体的系统
KR102718115B1 (ko) * 2018-04-03 2024-10-15 에이에스엠엘 네델란즈 비.브이. 광빔의 공간적 변조
CN112703451B (zh) * 2018-09-12 2025-03-25 西默有限公司 用于气体放电台的本体的量测
NL2023633A (en) * 2018-09-25 2020-04-30 Asml Netherlands Bv Laser system for target metrology and alteration in an euv light source
EP3871473B1 (en) * 2018-10-26 2025-03-26 ASML Netherlands B.V. Monitoring light emissions
TWI886110B (zh) 2019-01-30 2025-06-11 荷蘭商Ａｓｍｌ荷蘭公司 估計移動目標之性質之方法及裝置
KR20210127948A (ko) * 2019-02-26 2021-10-25 에이에스엠엘 네델란즈 비.브이. 극자외 광원 내의 타겟 공급 제어 장치 및 방법
TWI853016B (zh) * 2019-04-29 2024-08-21 荷蘭商Ａｓｍｌ荷蘭公司 使用機械濾光器之度量衡裝置及方法
US11320744B2 (en) * 2020-05-22 2022-05-03 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for controlling extreme ultraviolet light
WO2021239357A1 (en) * 2020-05-28 2021-12-02 Asml Netherlands B.V. Alignment of extreme ultraviolet light source
KR20230031288A (ko) * 2020-07-06 2023-03-07 에이에스엠엘 네델란즈 비.브이. 레이저-대-액적 정렬을 위한 시스템 및 방법
CN112629654A (zh) * 2020-12-11 2021-04-09 苏州瑞派宁科技有限公司 检测装置、激光等离子光源及其调节方法
DE102020134109B3 (de) * 2020-12-18 2022-05-25 Primes GmbH Meßtechnik für die Produktion mit Laserstrahlung Vorrichtung und Verfahren zur Fokuslagen-Bestimmung

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Also Published As

Publication number Publication date
US20130043401A1 (en) 2013-02-21
EP2745650A4 (en) 2015-05-13
CN103748967B (zh) 2017-03-22
TW201311057A (zh) 2013-03-01
KR20140053347A (ko) 2014-05-07
WO2013028272A1 (en) 2013-02-28
JP5977828B2 (ja) 2016-08-24
CN103748967A (zh) 2014-04-23
JP2014531743A (ja) 2014-11-27
EP2745650A1 (en) 2014-06-25
KR101949839B1 (ko) 2019-02-19
US8993976B2 (en) 2015-03-31

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