TWI534955B - 半導體裝置 - Google Patents
半導體裝置 Download PDFInfo
- Publication number
- TWI534955B TWI534955B TW100121636A TW100121636A TWI534955B TW I534955 B TWI534955 B TW I534955B TW 100121636 A TW100121636 A TW 100121636A TW 100121636 A TW100121636 A TW 100121636A TW I534955 B TWI534955 B TW I534955B
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- TW
- Taiwan
- Prior art keywords
- storage unit
- transistor
- terminal
- kth
- semiconductor device
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims description 347
- 238000003860 storage Methods 0.000 claims description 210
- 239000000463 material Substances 0.000 claims description 97
- 239000003990 capacitor Substances 0.000 claims description 24
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- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
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- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
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- 229910052708 sodium Inorganic materials 0.000 description 1
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- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
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- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
- Non-Volatile Memory (AREA)
- Dram (AREA)
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| KR101884031B1 (ko) * | 2010-04-07 | 2018-07-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 기억 장치 |
| WO2012014790A1 (en) * | 2010-07-27 | 2012-02-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8467232B2 (en) * | 2010-08-06 | 2013-06-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
-
2011
- 2011-06-09 WO PCT/JP2011/063754 patent/WO2011162147A1/en not_active Ceased
- 2011-06-16 US US13/161,616 patent/US8619470B2/en active Active
- 2011-06-17 JP JP2011135205A patent/JP5825742B2/ja not_active Expired - Fee Related
- 2011-06-21 TW TW100121636A patent/TWI534955B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US8619470B2 (en) | 2013-12-31 |
| JP5825742B2 (ja) | 2015-12-02 |
| WO2011162147A1 (en) | 2011-12-29 |
| TW201220434A (en) | 2012-05-16 |
| US20110317474A1 (en) | 2011-12-29 |
| JP2012028000A (ja) | 2012-02-09 |
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