TWI534912B - 剝離裝置及剝離方法 - Google Patents
剝離裝置及剝離方法 Download PDFInfo
- Publication number
- TWI534912B TWI534912B TW102124896A TW102124896A TWI534912B TW I534912 B TWI534912 B TW I534912B TW 102124896 A TW102124896 A TW 102124896A TW 102124896 A TW102124896 A TW 102124896A TW I534912 B TWI534912 B TW I534912B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- mixed fluid
- metal layer
- resist layer
- sprayed
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 57
- 239000000758 substrate Substances 0.000 claims description 128
- 239000012530 fluid Substances 0.000 claims description 117
- 239000002184 metal Substances 0.000 claims description 70
- 239000007788 liquid Substances 0.000 claims description 65
- 230000008569 process Effects 0.000 claims description 22
- 239000003960 organic solvent Substances 0.000 claims description 18
- 238000012545 processing Methods 0.000 claims description 14
- 238000005507 spraying Methods 0.000 claims description 8
- 230000006378 damage Effects 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 2
- 238000004891 communication Methods 0.000 claims description 2
- 206010040844 Skin exfoliation Diseases 0.000 description 64
- 239000000126 substance Substances 0.000 description 42
- 239000007789 gas Substances 0.000 description 33
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 19
- 238000012546 transfer Methods 0.000 description 8
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 238000000059 patterning Methods 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 239000007921 spray Substances 0.000 description 7
- 230000002522 swelling effect Effects 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 230000032258 transport Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 210000000481 breast Anatomy 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 230000001141 propulsive effect Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012156470A JP6347572B2 (ja) | 2012-07-12 | 2012-07-12 | リフトオフ装置およびリフトオフ方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201413830A TW201413830A (zh) | 2014-04-01 |
TWI534912B true TWI534912B (zh) | 2016-05-21 |
Family
ID=49916041
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW102124896A TWI534912B (zh) | 2012-07-12 | 2013-07-11 | 剝離裝置及剝離方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP6347572B2 (ja) |
TW (1) | TWI534912B (ja) |
WO (1) | WO2014010589A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI595332B (zh) * | 2014-08-05 | 2017-08-11 | 頎邦科技股份有限公司 | 光阻剝離方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62239536A (ja) * | 1986-04-11 | 1987-10-20 | Toshiba Corp | レジスト剥離処理装置 |
JPH01264227A (ja) * | 1988-04-14 | 1989-10-20 | Mitsubishi Electric Corp | レジスト除去方法 |
JP3800291B2 (ja) * | 1999-08-30 | 2006-07-26 | 大日本スクリーン製造株式会社 | 塗布方法及び塗布装置 |
JP2005045156A (ja) * | 2003-07-25 | 2005-02-17 | Matsushita Electric Ind Co Ltd | リフトオフ方法 |
JP4502854B2 (ja) * | 2005-03-22 | 2010-07-14 | 株式会社高田工業所 | 基板の処理装置及び処理方法 |
JP4523498B2 (ja) * | 2005-06-27 | 2010-08-11 | 東京エレクトロン株式会社 | 現像処理装置及び現像処理方法 |
JP2009069190A (ja) * | 2007-09-10 | 2009-04-02 | Fujifilm Corp | 金属パターン材料の製造方法及び金属パターン材料 |
JP2009295734A (ja) * | 2008-06-04 | 2009-12-17 | Sharp Corp | 半導体装置の製造装置及びその製造方法 |
JP2011061034A (ja) * | 2009-09-10 | 2011-03-24 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2011192779A (ja) * | 2010-03-15 | 2011-09-29 | Kurita Water Ind Ltd | 電子材料の洗浄方法および洗浄システム |
JP2011198933A (ja) * | 2010-03-18 | 2011-10-06 | Tokyo Electron Ltd | レジスト除去装置及びレジスト除去方法 |
JP5623104B2 (ja) * | 2010-03-18 | 2014-11-12 | 東京エレクトロン株式会社 | 基板洗浄装置及び基板洗浄方法 |
JP2011205015A (ja) * | 2010-03-26 | 2011-10-13 | Kurita Water Ind Ltd | 電子材料の洗浄方法 |
JP2012015180A (ja) * | 2010-06-29 | 2012-01-19 | Tokyo Electron Ltd | 二流体ノズル、基板処理装置、液体の液滴の生成方法、および基板処理方法 |
-
2012
- 2012-07-12 JP JP2012156470A patent/JP6347572B2/ja active Active
-
2013
- 2013-07-09 WO PCT/JP2013/068745 patent/WO2014010589A1/ja active Application Filing
- 2013-07-11 TW TW102124896A patent/TWI534912B/zh active
Also Published As
Publication number | Publication date |
---|---|
TW201413830A (zh) | 2014-04-01 |
JP6347572B2 (ja) | 2018-06-27 |
WO2014010589A1 (ja) | 2014-01-16 |
JP2014022389A (ja) | 2014-02-03 |
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