TWI533471B - 半導體元件 - Google Patents
半導體元件Info
- Publication number
- TWI533471B TWI533471B TW103119660A TW103119660A TWI533471B TW I533471 B TWI533471 B TW I533471B TW 103119660 A TW103119660 A TW 103119660A TW 103119660 A TW103119660 A TW 103119660A TW I533471 B TWI533471 B TW I533471B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- epitaxial layer
- semiconductor device
- heat treatment
- treatment process
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 63
- 239000000758 substrate Substances 0.000 claims description 70
- 238000000034 method Methods 0.000 claims description 47
- 238000010438 heat treatment Methods 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 239000013078 crystal Substances 0.000 claims description 13
- 230000007547 defect Effects 0.000 description 15
- 229910002601 GaN Inorganic materials 0.000 description 10
- 229910052594 sapphire Inorganic materials 0.000 description 10
- 239000010980 sapphire Substances 0.000 description 10
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 8
- 238000012876 topography Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 5
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000004038 photonic crystal Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- -1 ZnBeTe Chemical compound 0.000 description 1
- YOGKSPHGINUAEO-UHFFFAOYSA-N [Bi+3].[S-2].[Zn+2] Chemical compound [Bi+3].[S-2].[Zn+2] YOGKSPHGINUAEO-UHFFFAOYSA-N 0.000 description 1
- ROCBQULSWDJKML-UHFFFAOYSA-N [Zn+2].[Zn+2].[Se-2].[Se-2] Chemical compound [Zn+2].[Zn+2].[Se-2].[Se-2] ROCBQULSWDJKML-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- QWUZMTJBRUASOW-UHFFFAOYSA-N cadmium tellanylidenezinc Chemical compound [Zn].[Cd].[Te] QWUZMTJBRUASOW-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- NWJUKFMMXJODIL-UHFFFAOYSA-N zinc cadmium(2+) selenium(2-) Chemical compound [Zn+2].[Se-2].[Se-2].[Cd+2] NWJUKFMMXJODIL-UHFFFAOYSA-N 0.000 description 1
- UQMZPFKLYHOJDL-UHFFFAOYSA-N zinc;cadmium(2+);disulfide Chemical compound [S-2].[S-2].[Zn+2].[Cd+2] UQMZPFKLYHOJDL-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
- H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
Landscapes
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/732,537 US8258531B2 (en) | 2010-03-26 | 2010-03-26 | Semiconductor devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201448268A TW201448268A (zh) | 2014-12-16 |
| TWI533471B true TWI533471B (zh) | 2016-05-11 |
Family
ID=44655343
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103119660A TWI533471B (zh) | 2010-03-26 | 2010-06-08 | 半導體元件 |
| TW099118497A TWI450417B (zh) | 2010-03-26 | 2010-06-08 | 半導體元件 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099118497A TWI450417B (zh) | 2010-03-26 | 2010-06-08 | 半導體元件 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8258531B2 (enExample) |
| JP (2) | JP5181370B2 (enExample) |
| KR (1) | KR101208803B1 (enExample) |
| CN (2) | CN103346228B (enExample) |
| TW (2) | TWI533471B (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100976819B1 (ko) * | 2010-02-10 | 2010-08-20 | (주)더리즈 | 반도체 기판 및 이를 이용한 발광소자 |
| TWI430476B (zh) * | 2010-05-24 | 2014-03-11 | Huga Optotech Inc | 半導體發光元件 |
| US9293625B2 (en) * | 2012-04-13 | 2016-03-22 | Tandem Sun Ab | Method for manufacturing a semiconductor device based on epitaxial growth |
| TWI515929B (zh) * | 2012-04-24 | 2016-01-01 | 新世紀光電股份有限公司 | 發光角度收斂之圖案化基材及發光二極體元件 |
| TW201616674A (zh) * | 2014-10-17 | 2016-05-01 | 新世紀光電股份有限公司 | 發光二極體基板之圖形化微結構 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3595277B2 (ja) * | 2001-03-21 | 2004-12-02 | 三菱電線工業株式会社 | ＧａＮ系半導体発光ダイオード |
| JP4055503B2 (ja) | 2001-07-24 | 2008-03-05 | 日亜化学工業株式会社 | 半導体発光素子 |
| JP3991823B2 (ja) | 2002-09-04 | 2007-10-17 | 昭和電工株式会社 | Ｉｉｉ族窒化物半導体結晶、その製造方法、ｉｉｉ族窒化物半導体エピタキシャルウェーハ |
| WO2005018008A1 (ja) | 2003-08-19 | 2005-02-24 | Nichia Corporation | 半導体素子 |
| KR100714639B1 (ko) * | 2003-10-21 | 2007-05-07 | 삼성전기주식회사 | 발광 소자 |
| TWI236773B (en) | 2004-06-21 | 2005-07-21 | Nat Univ Chung Hsing | High-efficiency light-emitting device |
| JP4645225B2 (ja) * | 2005-02-24 | 2011-03-09 | 豊田合成株式会社 | 半導体素子の製造方法 |
| JP5082278B2 (ja) * | 2005-05-16 | 2012-11-28 | ソニー株式会社 | 発光ダイオードの製造方法、集積型発光ダイオードの製造方法および窒化物系ｉｉｉ−ｖ族化合物半導体の成長方法 |
| CN101232067B (zh) * | 2005-05-16 | 2013-05-15 | 索尼株式会社 | 发光二极管及其制造方法、集成发光二极管、以及显示器 |
| JP2007012809A (ja) * | 2005-06-29 | 2007-01-18 | Univ Of Tokushima | 窒化ガリウム系化合物半導体装置およびその製造方法 |
| JP2007019318A (ja) * | 2005-07-08 | 2007-01-25 | Sumitomo Chemical Co Ltd | 半導体発光素子、半導体発光素子用基板の製造方法及び半導体発光素子の製造方法 |
| TWI253771B (en) | 2005-07-25 | 2006-04-21 | Formosa Epitaxy Inc | Light emitting diode structure |
| JP2007201379A (ja) * | 2006-01-30 | 2007-08-09 | Hamamatsu Photonics Kk | 化合物半導体基板、その製造方法及び半導体デバイス |
| JP5082752B2 (ja) * | 2006-12-21 | 2012-11-28 | 日亜化学工業株式会社 | 半導体発光素子用基板の製造方法及びそれを用いた半導体発光素子 |
| JP4231088B2 (ja) * | 2007-12-27 | 2009-02-25 | 富士通株式会社 | 光磁気記録媒体 |
-
2010
- 2010-03-26 US US12/732,537 patent/US8258531B2/en not_active Expired - Fee Related
- 2010-06-08 TW TW103119660A patent/TWI533471B/zh not_active IP Right Cessation
- 2010-06-08 TW TW099118497A patent/TWI450417B/zh not_active IP Right Cessation
- 2010-07-01 JP JP2010150905A patent/JP5181370B2/ja not_active Expired - Fee Related
- 2010-07-09 CN CN201310253258.8A patent/CN103346228B/zh not_active Expired - Fee Related
- 2010-07-09 CN CN201010221717.0A patent/CN102201510B/zh not_active Expired - Fee Related
- 2010-08-16 KR KR1020100078702A patent/KR101208803B1/ko not_active Expired - Fee Related
-
2012
- 2012-12-27 JP JP2012286293A patent/JP2013110426A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN102201510A (zh) | 2011-09-28 |
| TW201133935A (en) | 2011-10-01 |
| CN103346228A (zh) | 2013-10-09 |
| US8258531B2 (en) | 2012-09-04 |
| CN102201510B (zh) | 2013-07-24 |
| JP5181370B2 (ja) | 2013-04-10 |
| CN103346228B (zh) | 2017-06-13 |
| JP2011211145A (ja) | 2011-10-20 |
| JP2013110426A (ja) | 2013-06-06 |
| KR20110108224A (ko) | 2011-10-05 |
| KR101208803B1 (ko) | 2012-12-06 |
| TWI450417B (zh) | 2014-08-21 |
| US20110233582A1 (en) | 2011-09-29 |
| TW201448268A (zh) | 2014-12-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Lee et al. | Comparison of InGaN-based LEDs grown on conventional sapphire and cone-shape-patterned sapphire substrate | |
| JP5237570B2 (ja) | 垂直型発光素子製造方法 | |
| Chen et al. | Enhanced output power of GaN-based LEDs with nano-patterned sapphire substrates | |
| TWI420703B (zh) | 半導體發光元件 | |
| US8247822B2 (en) | Semiconductor light-emitting device | |
| JP5673581B2 (ja) | Ｉｉｉ族窒化物半導体発光素子の製造方法、ｉｉｉ族窒化物半導体発光素子、ランプ、並びに、レチクル | |
| TWI455304B (zh) | 圖案化基板及堆疊發光二極體結構 | |
| KR100649769B1 (ko) | 반도체 발광 다이오드 및 그 제조 방법 | |
| TWI491069B (zh) | 光電組件 | |
| JP5306779B2 (ja) | 発光素子及びその製造方法 | |
| CN110416377B (zh) | 发光元件 | |
| JP5112761B2 (ja) | 化合物半導体素子およびそれを用いる照明装置ならびに化合物半導体素子の製造方法 | |
| TWI533471B (zh) | 半導體元件 | |
| KR101097888B1 (ko) | 질화물계 반도체 발광 소자 및 기판 제조 방법 | |
| KR101360882B1 (ko) | 질화물 반도체 소자 및 그 제조방법 | |
| KR101241331B1 (ko) | 질화물계 발광 소자 및 그 제조방법 | |
| KR100774214B1 (ko) | 질화물계 발광 소자 및 그 제조방법 | |
| KR100857796B1 (ko) | 질화물계 발광 소자 | |
| KR101198760B1 (ko) | 수직형 발광 소자 및 그 제조방법 | |
| KR100679825B1 (ko) | 질화물 발광 다이오드 | |
| KR20110092525A (ko) | 반도체 발광소자 제조방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |