KR101208803B1 - 반도체 부재 - Google Patents

반도체 부재 Download PDF

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Publication number
KR101208803B1
KR101208803B1 KR1020100078702A KR20100078702A KR101208803B1 KR 101208803 B1 KR101208803 B1 KR 101208803B1 KR 1020100078702 A KR1020100078702 A KR 1020100078702A KR 20100078702 A KR20100078702 A KR 20100078702A KR 101208803 B1 KR101208803 B1 KR 101208803B1
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KR
South Korea
Prior art keywords
semiconductor member
substrate
bump
wall
bumps
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020100078702A
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English (en)
Korean (ko)
Other versions
KR20110108224A (ko
Inventor
치 칭 쳉
칭 웬 퉁
Original Assignee
후가 옵토테크 인크.
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Application filed by 후가 옵토테크 인크. filed Critical 후가 옵토테크 인크.
Publication of KR20110108224A publication Critical patent/KR20110108224A/ko
Application granted granted Critical
Publication of KR101208803B1 publication Critical patent/KR101208803B1/ko
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous

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  • Led Devices (AREA)
KR1020100078702A 2010-03-26 2010-08-16 반도체 부재 Expired - Fee Related KR101208803B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/732,537 2010-03-26
US12/732,537 US8258531B2 (en) 2010-03-26 2010-03-26 Semiconductor devices

Publications (2)

Publication Number Publication Date
KR20110108224A KR20110108224A (ko) 2011-10-05
KR101208803B1 true KR101208803B1 (ko) 2012-12-06

Family

ID=44655343

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100078702A Expired - Fee Related KR101208803B1 (ko) 2010-03-26 2010-08-16 반도체 부재

Country Status (5)

Country Link
US (1) US8258531B2 (enExample)
JP (2) JP5181370B2 (enExample)
KR (1) KR101208803B1 (enExample)
CN (2) CN103346228B (enExample)
TW (2) TWI533471B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100976819B1 (ko) * 2010-02-10 2010-08-20 (주)더리즈 반도체 기판 및 이를 이용한 발광소자
TWI430476B (zh) * 2010-05-24 2014-03-11 Huga Optotech Inc 半導體發光元件
US9293625B2 (en) * 2012-04-13 2016-03-22 Tandem Sun Ab Method for manufacturing a semiconductor device based on epitaxial growth
TWI515929B (zh) * 2012-04-24 2016-01-01 新世紀光電股份有限公司 發光角度收斂之圖案化基材及發光二極體元件
TW201616674A (zh) * 2014-10-17 2016-05-01 新世紀光電股份有限公司 發光二極體基板之圖形化微結構

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004096021A (ja) 2002-09-04 2004-03-25 Showa Denko Kk Ｉｉｉ族窒化物半導体結晶、その製造方法、ｉｉｉ族窒化物半導体エピタキシャルウェーハ
JP2005101566A (ja) * 2003-08-19 2005-04-14 Nichia Chem Ind Ltd 半導体素子、発光素子及びその基板の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3595277B2 (ja) * 2001-03-21 2004-12-02 三菱電線工業株式会社 ＧａＮ系半導体発光ダイオード
JP4055503B2 (ja) 2001-07-24 2008-03-05 日亜化学工業株式会社 半導体発光素子
KR100714639B1 (ko) * 2003-10-21 2007-05-07 삼성전기주식회사 발광 소자
TWI236773B (en) 2004-06-21 2005-07-21 Nat Univ Chung Hsing High-efficiency light-emitting device
JP4645225B2 (ja) * 2005-02-24 2011-03-09 豊田合成株式会社 半導体素子の製造方法
JP5082278B2 (ja) * 2005-05-16 2012-11-28 ソニー株式会社 発光ダイオードの製造方法、集積型発光ダイオードの製造方法および窒化物系ｉｉｉ−ｖ族化合物半導体の成長方法
CN101232067B (zh) * 2005-05-16 2013-05-15 索尼株式会社 发光二极管及其制造方法、集成发光二极管、以及显示器
JP2007012809A (ja) * 2005-06-29 2007-01-18 Univ Of Tokushima 窒化ガリウム系化合物半導体装置およびその製造方法
JP2007019318A (ja) * 2005-07-08 2007-01-25 Sumitomo Chemical Co Ltd 半導体発光素子、半導体発光素子用基板の製造方法及び半導体発光素子の製造方法
TWI253771B (en) 2005-07-25 2006-04-21 Formosa Epitaxy Inc Light emitting diode structure
JP2007201379A (ja) * 2006-01-30 2007-08-09 Hamamatsu Photonics Kk 化合物半導体基板、その製造方法及び半導体デバイス
JP5082752B2 (ja) * 2006-12-21 2012-11-28 日亜化学工業株式会社 半導体発光素子用基板の製造方法及びそれを用いた半導体発光素子
JP4231088B2 (ja) * 2007-12-27 2009-02-25 富士通株式会社 光磁気記録媒体

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004096021A (ja) 2002-09-04 2004-03-25 Showa Denko Kk Ｉｉｉ族窒化物半導体結晶、その製造方法、ｉｉｉ族窒化物半導体エピタキシャルウェーハ
JP2005101566A (ja) * 2003-08-19 2005-04-14 Nichia Chem Ind Ltd 半導体素子、発光素子及びその基板の製造方法

Also Published As

Publication number Publication date
TWI533471B (zh) 2016-05-11
CN102201510A (zh) 2011-09-28
TW201133935A (en) 2011-10-01
CN103346228A (zh) 2013-10-09
US8258531B2 (en) 2012-09-04
CN102201510B (zh) 2013-07-24
JP5181370B2 (ja) 2013-04-10
CN103346228B (zh) 2017-06-13
JP2011211145A (ja) 2011-10-20
JP2013110426A (ja) 2013-06-06
KR20110108224A (ko) 2011-10-05
TWI450417B (zh) 2014-08-21
US20110233582A1 (en) 2011-09-29
TW201448268A (zh) 2014-12-16

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