JP2013110426A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP2013110426A JP2013110426A JP2012286293A JP2012286293A JP2013110426A JP 2013110426 A JP2013110426 A JP 2013110426A JP 2012286293 A JP2012286293 A JP 2012286293A JP 2012286293 A JP2012286293 A JP 2012286293A JP 2013110426 A JP2013110426 A JP 2013110426A
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- substrate
- layer
- epitaxial layer
- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 55
- 238000004519 manufacturing process Methods 0.000 title description 5
- 239000000758 substrate Substances 0.000 claims abstract description 65
- 239000013078 crystal Substances 0.000 claims abstract description 30
- 230000007547 defect Effects 0.000 abstract description 19
- 239000011800 void material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 25
- 230000008569 process Effects 0.000 description 21
- 229910052594 sapphire Inorganic materials 0.000 description 10
- 239000010980 sapphire Substances 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 7
- 229910002601 GaN Inorganic materials 0.000 description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- 238000001000 micrograph Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- -1 AlGaInP for green Chemical class 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
【解決手段】 上面12Aおよび上面12Aに配置された複数のバンプ30を備えた基板1であって、バンプ30の各々が、上面12Aに対して実質的に平行な頂面32および頂面32と上面12Aとの間の複数の壁面34を有するものである基板12、および基板12上に配置されたエピタキシャル層であって、基板12の上面12Aおよびバンプ30の壁面34に実質的に同じ結晶方位を有するエピタキシャル層を備える。また、別の態様において、エピタキシャル層は、基板12上に配置され、実質的に単一の結晶方位を有し、実質的に空隙なく、基板12の上面12Aおよびバンプ30の壁面34を被覆するものであってよい。
【選択図】 図3
Description
12 基板
13 バッファ層
14 n型半導体層またはエピタキシャル層
16 発光構造
18 p型半導体層またはエピタキシャル層
20 接触層
22 透明導電層
24 第1の電極
26 第2の電極
30 バンプ
32 頂面
34 壁面
36 傾斜面
Claims (1)
- 半導体装置であって、当該半導体装置が、
上面および該上面に配置された複数のバンプを備えた基板であって、前記バンプの各々が、前記上面に対して実質的に平行な頂面および該頂面と前記上面との間の複数の壁面を有するものである基板、
前記基板上に配置されたエピタキシャル層であって、該基板の上面および前記バンプの壁面に実質的に同じ結晶方位を有するエピタキシャル層、および、
前記壁面と前記エピタキシャル層との間に位置する前記壁面のダングリング・ボンドであって、当該ダングリング・ボンドからは前記エピタキシャル層は成長していないもの、を有してなり、
前記バンプの各々が、前記頂面と前記壁面との間に挟まれた複数の傾斜面を含み、該傾斜面の各々が前記壁面の内の2つの間にあり、前記エピタキシャル層が、前記バンプの壁面と傾斜面に同じ結晶方位を有し、
前記傾斜面および前記壁面が異なる傾斜角を有することを特徴とする半導体装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/732,537 | 2010-03-26 | ||
US12/732,537 US8258531B2 (en) | 2010-03-26 | 2010-03-26 | Semiconductor devices |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010150905A Division JP5181370B2 (ja) | 2010-03-26 | 2010-07-01 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013110426A true JP2013110426A (ja) | 2013-06-06 |
JP2013110426A5 JP2013110426A5 (ja) | 2013-08-08 |
Family
ID=44655343
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010150905A Active JP5181370B2 (ja) | 2010-03-26 | 2010-07-01 | 半導体装置 |
JP2012286293A Pending JP2013110426A (ja) | 2010-03-26 | 2012-12-27 | 半導体装置の製造方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010150905A Active JP5181370B2 (ja) | 2010-03-26 | 2010-07-01 | 半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8258531B2 (ja) |
JP (2) | JP5181370B2 (ja) |
KR (1) | KR101208803B1 (ja) |
CN (2) | CN103346228B (ja) |
TW (2) | TWI450417B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100976819B1 (ko) * | 2010-02-10 | 2010-08-20 | (주)더리즈 | 반도체 기판 및 이를 이용한 발광소자 |
TWI430476B (zh) * | 2010-05-24 | 2014-03-11 | Huga Optotech Inc | 半導體發光元件 |
WO2013154485A1 (en) * | 2012-04-13 | 2013-10-17 | Sun Yanting | A method for manufacturing a semiconductor method device based on epitaxial growth. |
TWI515929B (zh) * | 2012-04-24 | 2016-01-01 | 新世紀光電股份有限公司 | 發光角度收斂之圖案化基材及發光二極體元件 |
TW201616674A (zh) * | 2014-10-17 | 2016-05-01 | 新世紀光電股份有限公司 | 發光二極體基板之圖形化微結構 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003318441A (ja) * | 2001-07-24 | 2003-11-07 | Nichia Chem Ind Ltd | 半導体発光素子 |
JP2005101566A (ja) * | 2003-08-19 | 2005-04-14 | Nichia Chem Ind Ltd | 半導体素子、発光素子及びその基板の製造方法 |
JP2006237254A (ja) * | 2005-02-24 | 2006-09-07 | Toyoda Gosei Co Ltd | 半導体素子及びその製造方法 |
WO2007007774A1 (ja) * | 2005-07-08 | 2007-01-18 | Sumitomo Chemical Company, Limited | 基板及び半導体発光素子 |
JP2007201379A (ja) * | 2006-01-30 | 2007-08-09 | Hamamatsu Photonics Kk | 化合物半導体基板、その製造方法及び半導体デバイス |
JP2008177528A (ja) * | 2006-12-21 | 2008-07-31 | Nichia Chem Ind Ltd | 半導体発光素子用基板の製造方法及びそれを用いた半導体発光素子 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3595277B2 (ja) * | 2001-03-21 | 2004-12-02 | 三菱電線工業株式会社 | GaN系半導体発光ダイオード |
JP3991823B2 (ja) | 2002-09-04 | 2007-10-17 | 昭和電工株式会社 | Iii族窒化物半導体結晶、その製造方法、iii族窒化物半導体エピタキシャルウェーハ |
KR100714639B1 (ko) * | 2003-10-21 | 2007-05-07 | 삼성전기주식회사 | 발광 소자 |
TWI236773B (en) | 2004-06-21 | 2005-07-21 | Nat Univ Chung Hsing | High-efficiency light-emitting device |
JP5082278B2 (ja) | 2005-05-16 | 2012-11-28 | ソニー株式会社 | 発光ダイオードの製造方法、集積型発光ダイオードの製造方法および窒化物系iii−v族化合物半導体の成長方法 |
CN101232067B (zh) * | 2005-05-16 | 2013-05-15 | 索尼株式会社 | 发光二极管及其制造方法、集成发光二极管、以及显示器 |
JP2007012809A (ja) * | 2005-06-29 | 2007-01-18 | Univ Of Tokushima | 窒化ガリウム系化合物半導体装置およびその製造方法 |
TWI253771B (en) | 2005-07-25 | 2006-04-21 | Formosa Epitaxy Inc | Light emitting diode structure |
JP4231088B2 (ja) * | 2007-12-27 | 2009-02-25 | 富士通株式会社 | 光磁気記録媒体 |
-
2010
- 2010-03-26 US US12/732,537 patent/US8258531B2/en active Active
- 2010-06-08 TW TW099118497A patent/TWI450417B/zh active
- 2010-06-08 TW TW103119660A patent/TWI533471B/zh active
- 2010-07-01 JP JP2010150905A patent/JP5181370B2/ja active Active
- 2010-07-09 CN CN201310253258.8A patent/CN103346228B/zh active Active
- 2010-07-09 CN CN201010221717.0A patent/CN102201510B/zh active Active
- 2010-08-16 KR KR1020100078702A patent/KR101208803B1/ko active IP Right Grant
-
2012
- 2012-12-27 JP JP2012286293A patent/JP2013110426A/ja active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003318441A (ja) * | 2001-07-24 | 2003-11-07 | Nichia Chem Ind Ltd | 半導体発光素子 |
JP2005101566A (ja) * | 2003-08-19 | 2005-04-14 | Nichia Chem Ind Ltd | 半導体素子、発光素子及びその基板の製造方法 |
JP2006237254A (ja) * | 2005-02-24 | 2006-09-07 | Toyoda Gosei Co Ltd | 半導体素子及びその製造方法 |
WO2007007774A1 (ja) * | 2005-07-08 | 2007-01-18 | Sumitomo Chemical Company, Limited | 基板及び半導体発光素子 |
JP2007201379A (ja) * | 2006-01-30 | 2007-08-09 | Hamamatsu Photonics Kk | 化合物半導体基板、その製造方法及び半導体デバイス |
JP2008177528A (ja) * | 2006-12-21 | 2008-07-31 | Nichia Chem Ind Ltd | 半導体発光素子用基板の製造方法及びそれを用いた半導体発光素子 |
Also Published As
Publication number | Publication date |
---|---|
TWI450417B (zh) | 2014-08-21 |
US20110233582A1 (en) | 2011-09-29 |
JP5181370B2 (ja) | 2013-04-10 |
CN102201510A (zh) | 2011-09-28 |
TWI533471B (zh) | 2016-05-11 |
CN103346228B (zh) | 2017-06-13 |
KR20110108224A (ko) | 2011-10-05 |
KR101208803B1 (ko) | 2012-12-06 |
CN102201510B (zh) | 2013-07-24 |
JP2011211145A (ja) | 2011-10-20 |
US8258531B2 (en) | 2012-09-04 |
CN103346228A (zh) | 2013-10-09 |
TW201448268A (zh) | 2014-12-16 |
TW201133935A (en) | 2011-10-01 |
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