TWI532098B - A plasma processing method and a vacuum processing apparatus - Google Patents

A plasma processing method and a vacuum processing apparatus Download PDF

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Publication number
TWI532098B
TWI532098B TW102148437A TW102148437A TWI532098B TW I532098 B TWI532098 B TW I532098B TW 102148437 A TW102148437 A TW 102148437A TW 102148437 A TW102148437 A TW 102148437A TW I532098 B TWI532098 B TW I532098B
Authority
TW
Taiwan
Prior art keywords
plasma
treatment
sample
vacuum
chamber
Prior art date
Application number
TW102148437A
Other languages
English (en)
Chinese (zh)
Other versions
TW201501197A (zh
Inventor
田中一海
角屋誠浩
Original Assignee
日立全球先端科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日立全球先端科技股份有限公司 filed Critical 日立全球先端科技股份有限公司
Publication of TW201501197A publication Critical patent/TW201501197A/zh
Application granted granted Critical
Publication of TWI532098B publication Critical patent/TWI532098B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/273—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/095—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by irradiating with electromagnetic or particle radiation

Landscapes

  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
TW102148437A 2013-06-25 2013-12-26 A plasma processing method and a vacuum processing apparatus TWI532098B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013132210A JP6165518B2 (ja) 2013-06-25 2013-06-25 プラズマ処理方法および真空処理装置

Publications (2)

Publication Number Publication Date
TW201501197A TW201501197A (zh) 2015-01-01
TWI532098B true TWI532098B (zh) 2016-05-01

Family

ID=52111268

Family Applications (2)

Application Number Title Priority Date Filing Date
TW102148437A TWI532098B (zh) 2013-06-25 2013-12-26 A plasma processing method and a vacuum processing apparatus
TW105103764A TWI612580B (zh) 2013-06-25 2013-12-26 電漿處理方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW105103764A TWI612580B (zh) 2013-06-25 2013-12-26 電漿處理方法

Country Status (4)

Country Link
US (1) US20140377958A1 (https=)
JP (1) JP6165518B2 (https=)
KR (1) KR101572592B1 (https=)
TW (2) TWI532098B (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG10201708258XA (en) * 2013-02-28 2017-11-29 Univ Nanyang Tech A capacitively coupled electrodeless plasma apparatus and a method using capacitively coupled electrodeless plasma for processing a silicon substrate

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05129238A (ja) * 1991-10-31 1993-05-25 Fujitsu Ltd 半導体製造装置
JP3001639B2 (ja) * 1994-02-03 2000-01-24 アプライド マテリアルズ インコーポレイテッド 半導体基板のストリッピング、パッシベーション及び腐食の抑制
JPH11330046A (ja) * 1998-05-08 1999-11-30 Mitsubishi Electric Corp 半導体装置の製造方法及び半導体装置
WO2001097270A2 (en) * 2000-06-14 2001-12-20 Applied Materials, Inc. Substrate cleaning apparatus and method
KR100382725B1 (ko) * 2000-11-24 2003-05-09 삼성전자주식회사 클러스터화된 플라즈마 장치에서의 반도체소자의 제조방법
US7374696B2 (en) * 2003-02-14 2008-05-20 Applied Materials, Inc. Method and apparatus for removing a halogen-containing residue
JP2006270030A (ja) 2005-02-28 2006-10-05 Tokyo Electron Ltd プラズマ処理方法、および後処理方法
JP4884268B2 (ja) * 2007-03-22 2012-02-29 東京エレクトロン株式会社 アッシング方法
JP2010056574A (ja) * 2009-12-07 2010-03-11 Nec Electronics Corp 半導体装置の製造方法
US8562742B2 (en) * 2010-04-30 2013-10-22 Applied Materials, Inc. Apparatus for radial delivery of gas to a chamber and methods of use thereof
US20110304078A1 (en) * 2010-06-14 2011-12-15 Applied Materials, Inc. Methods for removing byproducts from load lock chambers
KR101895307B1 (ko) * 2011-03-01 2018-10-04 어플라이드 머티어리얼스, 인코포레이티드 듀얼 로드락 구성의 저감 및 스트립 프로세스 챔버
WO2014150234A1 (en) * 2013-03-15 2014-09-25 Applied Materials, Inc Processing systems, apparatus, and methods adapted to process substrates in electronic device manufacturing
US9355876B2 (en) * 2013-03-15 2016-05-31 Applied Materials, Inc. Process load lock apparatus, lift assemblies, electronic device processing systems, and methods of processing substrates in load lock locations
US20150064880A1 (en) * 2013-08-30 2015-03-05 Applied Materials, Inc. Post etch treatment technology for enhancing plasma-etched silicon surface stability in ambient

Also Published As

Publication number Publication date
KR101572592B1 (ko) 2015-11-27
TW201618183A (zh) 2016-05-16
JP2015008183A (ja) 2015-01-15
TW201501197A (zh) 2015-01-01
JP6165518B2 (ja) 2017-07-19
TWI612580B (zh) 2018-01-21
KR20150000814A (ko) 2015-01-05
US20140377958A1 (en) 2014-12-25

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