TWI526791B - 曝光設備及裝置製造方法 - Google Patents

曝光設備及裝置製造方法 Download PDF

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Publication number
TWI526791B
TWI526791B TW103113663A TW103113663A TWI526791B TW I526791 B TWI526791 B TW I526791B TW 103113663 A TW103113663 A TW 103113663A TW 103113663 A TW103113663 A TW 103113663A TW I526791 B TWI526791 B TW I526791B
Authority
TW
Taiwan
Prior art keywords
pattern
imaging
focal depth
substrate
optical system
Prior art date
Application number
TW103113663A
Other languages
English (en)
Chinese (zh)
Other versions
TW201430507A (zh
Inventor
岩井俊樹
佐佐木亮
Original Assignee
佳能股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 佳能股份有限公司 filed Critical 佳能股份有限公司
Publication of TW201430507A publication Critical patent/TW201430507A/zh
Application granted granted Critical
Publication of TWI526791B publication Critical patent/TWI526791B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/52—Details
    • G03B27/53—Automatic registration or positioning of originals with respect to each other or the photosensitive layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW103113663A 2010-07-08 2011-07-04 曝光設備及裝置製造方法 TWI526791B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010156185A JP5662717B2 (ja) 2010-07-08 2010-07-08 露光装置及びデバイスの製造方法

Publications (2)

Publication Number Publication Date
TW201430507A TW201430507A (zh) 2014-08-01
TWI526791B true TWI526791B (zh) 2016-03-21

Family

ID=45438357

Family Applications (2)

Application Number Title Priority Date Filing Date
TW103113663A TWI526791B (zh) 2010-07-08 2011-07-04 曝光設備及裝置製造方法
TW100123511A TWI447531B (zh) 2010-07-08 2011-07-04 曝光設備及裝置製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW100123511A TWI447531B (zh) 2010-07-08 2011-07-04 曝光設備及裝置製造方法

Country Status (4)

Country Link
US (2) US8810774B2 (cg-RX-API-DMAC7.html)
JP (1) JP5662717B2 (cg-RX-API-DMAC7.html)
KR (1) KR101530747B1 (cg-RX-API-DMAC7.html)
TW (2) TWI526791B (cg-RX-API-DMAC7.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5662717B2 (ja) 2010-07-08 2015-02-04 キヤノン株式会社 露光装置及びデバイスの製造方法
CN103969967B (zh) * 2013-02-01 2016-08-24 上海微电子装备有限公司 用于硅片对准级间串绕测试和拟合的信号处理方法
JP2018081224A (ja) * 2016-11-17 2018-05-24 キヤノン株式会社 撮像装置およびその制御方法
US10748821B2 (en) 2017-04-26 2020-08-18 Samsung Electronics Co., Ltd. Method and system for measuring pattern placement error on a wafer
JP7378265B2 (ja) * 2019-10-18 2023-11-13 キヤノン株式会社 露光装置、露光方法及び物品の製造方法
JP7566590B2 (ja) * 2020-11-05 2024-10-15 キヤノン株式会社 露光装置、露光方法、及び物品の製造方法

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JPH088204B2 (ja) * 1988-04-25 1996-01-29 株式会社ニコン 投影露光装置
JP3003990B2 (ja) * 1988-04-25 2000-01-31 株式会社ニコン 投影露光方法、投影露光装置及び回路製造方法
JPH03155112A (ja) * 1989-11-13 1991-07-03 Nikon Corp 露光条件測定方法
JP2803936B2 (ja) * 1992-01-21 1998-09-24 三菱電機株式会社 投影露光装置及びパターン露光方法
JP2766575B2 (ja) * 1992-01-23 1998-06-18 三菱電機株式会社 投影レンズの評価装置及び評価方法
JPH0817719A (ja) 1994-06-30 1996-01-19 Nikon Corp 投影露光装置
JPH0922868A (ja) * 1995-07-06 1997-01-21 Canon Inc 投影露光装置及びそれを用いた半導体デバイスの製造方法
JP3991241B2 (ja) * 1997-04-07 2007-10-17 株式会社ニコン 面位置調整装置及びその方法並びに露光装置及びその方法
JP2002110511A (ja) * 2000-09-27 2002-04-12 Nikon Corp 露光方法及び露光装置
JP2003197510A (ja) * 2001-12-27 2003-07-11 Nikon Corp 収差測定装置、収差測定方法、光学系、および、露光装置
JP4352458B2 (ja) * 2002-03-01 2009-10-28 株式会社ニコン 投影光学系の調整方法、予測方法、評価方法、調整方法、露光方法及び露光装置、露光装置の製造方法、プログラム並びにデバイス製造方法
JP2004047786A (ja) * 2002-07-12 2004-02-12 Nikon Corp 照明光学装置，露光装置および露光方法
JP2004319937A (ja) * 2003-04-21 2004-11-11 Nikon Corp 計測方法、光学特性計測方法、露光装置の調整方法及び露光方法、並びにデバイス製造方法
TWI396225B (zh) * 2004-07-23 2013-05-11 尼康股份有限公司 成像面測量方法、曝光方法、元件製造方法以及曝光裝置
JP2006344648A (ja) * 2005-06-07 2006-12-21 Matsushita Electric Ind Co Ltd 露光方法
US7619717B2 (en) 2006-10-12 2009-11-17 Asml Netherlands B.V. Method for performing a focus test and a device manufacturing method
WO2009018846A1 (en) * 2007-08-09 2009-02-12 Carl Zeiss Smt Ag Method of structuring a photosensitive material
JP2009272387A (ja) 2008-05-01 2009-11-19 Canon Inc 走査露光装置及びデバイス製造方法。
JP2010182718A (ja) * 2009-02-03 2010-08-19 Toshiba Corp 露光方法及び露光システム
JP2010251500A (ja) * 2009-04-15 2010-11-04 Toshiba Corp 半導体デバイスの製造方法及び露光条件決定プログラム
JP5662717B2 (ja) * 2010-07-08 2015-02-04 キヤノン株式会社 露光装置及びデバイスの製造方法

Also Published As

Publication number Publication date
TW201430507A (zh) 2014-08-01
US8810774B2 (en) 2014-08-19
TWI447531B (zh) 2014-08-01
US20140218712A1 (en) 2014-08-07
TW201202870A (en) 2012-01-16
KR20120005382A (ko) 2012-01-16
JP2012019110A (ja) 2012-01-26
US9152059B2 (en) 2015-10-06
US20120008122A1 (en) 2012-01-12
JP5662717B2 (ja) 2015-02-04
KR101530747B1 (ko) 2015-06-22

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