TWI518457B - 正型感放射線性組成物、顯示元件用層間絕緣膜及其形成方法 - Google Patents

正型感放射線性組成物、顯示元件用層間絕緣膜及其形成方法 Download PDF

Info

Publication number
TWI518457B
TWI518457B TW100111470A TW100111470A TWI518457B TW I518457 B TWI518457 B TW I518457B TW 100111470 A TW100111470 A TW 100111470A TW 100111470 A TW100111470 A TW 100111470A TW I518457 B TWI518457 B TW I518457B
Authority
TW
Taiwan
Prior art keywords
group
mass
compound
methyl
structural unit
Prior art date
Application number
TW100111470A
Other languages
English (en)
Chinese (zh)
Other versions
TW201142514A (en
Inventor
一戶大吾
Original Assignee
Jsr股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr股份有限公司 filed Critical Jsr股份有限公司
Publication of TW201142514A publication Critical patent/TW201142514A/zh
Application granted granted Critical
Publication of TWI518457B publication Critical patent/TWI518457B/zh

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/04Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of organic materials, e.g. plastics
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW100111470A 2010-04-01 2011-04-01 正型感放射線性組成物、顯示元件用層間絕緣膜及其形成方法 TWI518457B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010085564A JP4591625B1 (ja) 2010-04-01 2010-04-01 ポジ型感放射線性組成物、層間絶縁膜及びその形成方法

Publications (2)

Publication Number Publication Date
TW201142514A TW201142514A (en) 2011-12-01
TWI518457B true TWI518457B (zh) 2016-01-21

Family

ID=43425691

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100111470A TWI518457B (zh) 2010-04-01 2011-04-01 正型感放射線性組成物、顯示元件用層間絕緣膜及其形成方法

Country Status (4)

Country Link
JP (1) JP4591625B1 (ja)
KR (1) KR101757716B1 (ja)
CN (1) CN102213918B (ja)
TW (1) TWI518457B (ja)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5676222B2 (ja) * 2010-11-19 2015-02-25 富士フイルム株式会社 感光性樹脂組成物、硬化膜の形成方法、硬化膜、有機el表示装置、及び、液晶表示装置
JP5492755B2 (ja) * 2010-12-03 2014-05-14 富士フイルム株式会社 感光性樹脂組成物、硬化膜の形成方法、硬化膜、有機el表示装置、及び、液晶表示装置
JP5213944B2 (ja) * 2010-12-16 2013-06-19 富士フイルム株式会社 感光性樹脂組成物、硬化膜の形成方法、硬化膜、有機el表示装置、及び、液晶表示装置
JP5492760B2 (ja) * 2010-12-13 2014-05-14 富士フイルム株式会社 感光性樹脂組成物、硬化膜の形成方法、硬化膜、有機el表示装置、及び、液晶表示装置
JP5191567B2 (ja) * 2011-01-12 2013-05-08 富士フイルム株式会社 ポジ型感光性樹脂組成物、硬化膜の形成方法、硬化膜、有機el表示装置、及び、液晶表示装置
JP5358005B2 (ja) * 2011-09-22 2013-12-04 富士フイルム株式会社 ポジ型感光性アクリル樹脂およびポジ型感光性樹脂組成物
JP5734152B2 (ja) * 2011-09-30 2015-06-10 富士フイルム株式会社 感光性樹脂組成物、硬化膜並びにその製造方法
JP6109506B2 (ja) * 2011-10-05 2017-04-05 東京応化工業株式会社 樹脂組成物、感光性樹脂組成物、スペーサ、及び表示装置
JP5949094B2 (ja) * 2012-04-25 2016-07-06 Jsr株式会社 ポジ型感放射線性組成物、表示素子用層間絶縁膜及びその形成方法
JP6492444B2 (ja) * 2013-09-04 2019-04-03 Jsr株式会社 感放射線性樹脂組成物、硬化膜、その形成方法、及び電子デバイス
JP6318957B2 (ja) * 2014-07-31 2018-05-09 Jsr株式会社 感放射線性樹脂組成物、硬化膜及びその形成方法、並びに表示素子
KR102635564B1 (ko) * 2016-05-03 2024-02-08 동우 화인켐 주식회사 포지티브형 감광성 수지 조성물 및 이로부터 제조된 절연막
TWI799484B (zh) * 2018-12-25 2023-04-21 奇美實業股份有限公司 化學增幅型正型感光性樹脂組成物及其應用

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3562599B2 (ja) * 1995-08-18 2004-09-08 大日本インキ化学工業株式会社 フォトレジスト組成物
JPH11209787A (ja) * 1998-01-28 1999-08-03 Dainippon Ink & Chem Inc フッ素系界面活性剤及びその組成物
US6156860A (en) * 1997-02-18 2000-12-05 Dainippon Ink And Chemicals, Inc. Surface active agent containing fluorine and coating compositions using the same
JP3800513B2 (ja) * 2001-12-13 2006-07-26 富士写真フイルム株式会社 画像形成材料
JP2004002733A (ja) * 2002-03-28 2004-01-08 Dainippon Ink & Chem Inc コーティング用組成物
JP4403355B2 (ja) * 2002-09-13 2010-01-27 Dic株式会社 カラーレジスト組成物
JP4207604B2 (ja) * 2003-03-03 2009-01-14 Jsr株式会社 感放射線性樹脂組成物、層間絶縁膜およびマイクロレンズ、ならびにそれらの形成方法
TWI304917B (en) * 2003-05-20 2009-01-01 Tokyo Ohka Kogyo Co Ltd Positive photoresist composition for discharge nozzle type application and resist pattern formation method
JP4405293B2 (ja) 2003-05-20 2010-01-27 東京応化工業株式会社 吐出ノズル式塗布法用ポジ型ホトレジスト組成物及びレジストパターンの形成方法
JP4759483B2 (ja) * 2006-09-25 2011-08-31 Azエレクトロニックマテリアルズ株式会社 フォトレジスト組成物、フォトレジスト組成物の塗布方法およびレジストパターンの形成方法
JP4637209B2 (ja) * 2007-06-05 2011-02-23 富士フイルム株式会社 ポジ型感光性樹脂組成物及びそれを用いた硬化膜形成方法
JP4637221B2 (ja) * 2007-09-28 2011-02-23 富士フイルム株式会社 ポジ型感光性樹脂組成物及びそれを用いた硬化膜形成方法
JP2010026460A (ja) * 2008-07-24 2010-02-04 Fujifilm Corp ポジ型感光性樹脂組成物及びそれを用いた硬化膜形成方法
JP5371313B2 (ja) * 2008-07-28 2013-12-18 富士フイルム株式会社 カラーフィルタ用着色硬化性組成物、カラーフィルタ、カラーフィルタの製造方法、及び液晶表示素子

Also Published As

Publication number Publication date
CN102213918B (zh) 2014-07-16
JP4591625B1 (ja) 2010-12-01
KR101757716B1 (ko) 2017-07-14
TW201142514A (en) 2011-12-01
JP2011215503A (ja) 2011-10-27
KR20110110713A (ko) 2011-10-07
CN102213918A (zh) 2011-10-12

Similar Documents

Publication Publication Date Title
TWI518457B (zh) 正型感放射線性組成物、顯示元件用層間絕緣膜及其形成方法
TWI620025B (zh) 正型感放射線性組成物、層間絕緣膜及其形成方法
TWI475039B (zh) 正型感放射線性組成物、層間絕緣膜及其形成方法
KR101854683B1 (ko) 포지티브형 감방사선성 조성물, 층간 절연막 및 그 형성 방법
TWI534543B (zh) 正型感放射線性組成物、層間絶緣膜及其形成方法
JP5488176B2 (ja) ポジ型感放射線性組成物、層間絶縁膜及びその形成方法
JP5630068B2 (ja) ポジ型感放射線性組成物、層間絶縁膜及びその形成方法
JP6668888B2 (ja) ポジ型感放射線性樹脂組成物、層間絶縁膜、層間絶縁膜の形成方法、半導体素子及び表示素子
KR101295123B1 (ko) 포지티브형 감방사선성 조성물, 층간 절연막 및 그 형성 방법
JP7035889B2 (ja) 感放射線性樹脂組成物およびその用途
KR102285071B1 (ko) 감방사선성 수지 조성물, 경화막, 경화막의 형성 방법 및 전자 디바이스
JP2011191344A (ja) ポジ型感放射線性樹脂組成物、層間絶縁膜及びその形成方法
TWI464535B (zh) 感放射線性樹脂組成物、層間絕緣膜及其形成方法
TWI595319B (zh) 液晶顯示元件、正型感放射線性組成物、液晶顯示元件用層間絕緣膜及其形成方法
CN111381438B (zh) 化学增幅型正型感光性树脂组成物及其应用
TWI795489B (zh) 化學增幅型正型感光性樹脂組成物及其應用
TWI489203B (zh) 正型感放射線性組成物、層間絕緣膜及其形成方法
CN113126435A (zh) 化学增幅型正型感光性树脂组合物及其应用
CN112394618A (zh) 化学增幅型正型感光性树脂组成物及所制保护膜和组件
JP2017197655A (ja) 感放射線性樹脂組成物、硬化膜、硬化膜の形成方法及び表示素子