TWI504717B - 用於晶片曝露覆晶封裝之模底部充填過程中的遮蔽膠帶 - Google Patents
用於晶片曝露覆晶封裝之模底部充填過程中的遮蔽膠帶 Download PDFInfo
- Publication number
- TWI504717B TWI504717B TW100121211A TW100121211A TWI504717B TW I504717 B TWI504717 B TW I504717B TW 100121211 A TW100121211 A TW 100121211A TW 100121211 A TW100121211 A TW 100121211A TW I504717 B TWI504717 B TW I504717B
- Authority
- TW
- Taiwan
- Prior art keywords
- resin
- weight
- flip chip
- energy beam
- parts
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 26
- 230000000873 masking effect Effects 0.000 title claims description 14
- 239000000853 adhesive Substances 0.000 title description 10
- 230000001070 adhesive effect Effects 0.000 title description 10
- 239000011347 resin Substances 0.000 claims description 33
- 229920005989 resin Polymers 0.000 claims description 33
- 239000012790 adhesive layer Substances 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 22
- 239000004925 Acrylic resin Substances 0.000 claims description 18
- 229920000178 Acrylic resin Polymers 0.000 claims description 18
- -1 methyl-[4-methylphenylthio]-2-morpholinone Chemical compound 0.000 claims description 14
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 13
- 238000005429 filling process Methods 0.000 claims description 11
- 239000003795 chemical substances by application Substances 0.000 claims description 10
- 238000013007 heat curing Methods 0.000 claims description 9
- 229920002803 thermoplastic polyurethane Polymers 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- OAKJQQAXSVQMHS-UHFFFAOYSA-N hydrazine Substances NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 5
- 238000004806 packaging method and process Methods 0.000 claims description 5
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical compound C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 claims description 4
- 229910052797 bismuth Inorganic materials 0.000 claims description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- WXPWZZHELZEVPO-UHFFFAOYSA-N (4-methylphenyl)-phenylmethanone Chemical compound C1=CC(C)=CC=C1C(=O)C1=CC=CC=C1 WXPWZZHELZEVPO-UHFFFAOYSA-N 0.000 claims description 2
- YIKSHDNOAYSSPX-UHFFFAOYSA-N 1-propan-2-ylthioxanthen-9-one Chemical compound S1C2=CC=CC=C2C(=O)C2=C1C=CC=C2C(C)C YIKSHDNOAYSSPX-UHFFFAOYSA-N 0.000 claims description 2
- ZCDADJXRUCOCJE-UHFFFAOYSA-N 2-chlorothioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(Cl)=CC=C3SC2=C1 ZCDADJXRUCOCJE-UHFFFAOYSA-N 0.000 claims description 2
- XMLYCEVDHLAQEL-UHFFFAOYSA-N 2-hydroxy-2-methyl-1-phenylpropan-1-one Chemical compound CC(C)(O)C(=O)C1=CC=CC=C1 XMLYCEVDHLAQEL-UHFFFAOYSA-N 0.000 claims description 2
- NOWKCMXCCJGMRR-UHFFFAOYSA-N Aziridine Chemical compound C1CN1 NOWKCMXCCJGMRR-UHFFFAOYSA-N 0.000 claims description 2
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 claims description 2
- 239000012965 benzophenone Substances 0.000 claims description 2
- UXWSUTBOOHDZIL-UHFFFAOYSA-N bis(1-hydroxycyclohexyl)methanone Chemical compound C1CCCCC1(O)C(=O)C1(O)CCCCC1 UXWSUTBOOHDZIL-UHFFFAOYSA-N 0.000 claims description 2
- 125000003700 epoxy group Chemical group 0.000 claims description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 2
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 claims description 2
- WPIULSIZRNJJDL-UHFFFAOYSA-N guanidine;isocyanic acid Chemical group N=C=O.NC(N)=N WPIULSIZRNJJDL-UHFFFAOYSA-N 0.000 claims description 2
- LYXOWKPVTCPORE-UHFFFAOYSA-N phenyl-(4-phenylphenyl)methanone Chemical compound C=1C=C(C=2C=CC=CC=2)C=CC=1C(=O)C1=CC=CC=C1 LYXOWKPVTCPORE-UHFFFAOYSA-N 0.000 claims description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims 1
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 claims 1
- ZTHRNKCFKWMGER-UHFFFAOYSA-N [Ba].COC(=O)C=C Chemical compound [Ba].COC(=O)C=C ZTHRNKCFKWMGER-UHFFFAOYSA-N 0.000 claims 1
- 239000013522 chelant Substances 0.000 claims 1
- 210000003298 dental enamel Anatomy 0.000 claims 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- KYTZHLUVELPASH-UHFFFAOYSA-N naphthalene-1,2-dicarboxylic acid Chemical compound C1=CC=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 KYTZHLUVELPASH-UHFFFAOYSA-N 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 36
- 230000000052 comparative effect Effects 0.000 description 15
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 9
- 229920001721 polyimide Polymers 0.000 description 9
- 229910000679 solder Inorganic materials 0.000 description 9
- 239000011112 polyethylene naphthalate Substances 0.000 description 8
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 8
- 239000004810 polytetrafluoroethylene Substances 0.000 description 8
- 238000000465 moulding Methods 0.000 description 7
- 238000011049 filling Methods 0.000 description 5
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 5
- 229920002799 BoPET Polymers 0.000 description 4
- 229920000297 Rayon Polymers 0.000 description 4
- 238000005336 cracking Methods 0.000 description 4
- 238000001723 curing Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 125000004494 ethyl ester group Chemical group 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 125000003396 thiol group Chemical group [H]S* 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- LNOLJFCCYQZFBQ-BUHFOSPRSA-N (ne)-n-[(4-nitrophenyl)-phenylmethylidene]hydroxylamine Chemical compound C=1C=C([N+]([O-])=O)C=CC=1C(=N/O)/C1=CC=CC=C1 LNOLJFCCYQZFBQ-BUHFOSPRSA-N 0.000 description 1
- CCHRVFZBKRIKIX-UHFFFAOYSA-N 1-nitro-3-(3-nitrophenyl)benzene Chemical compound [O-][N+](=O)C1=CC=CC(C=2C=C(C=CC=2)[N+]([O-])=O)=C1 CCHRVFZBKRIKIX-UHFFFAOYSA-N 0.000 description 1
- WBKHIFPQJKGEOJ-UHFFFAOYSA-N 2,4,6-trimethylbenzohydrazide Chemical compound CC1=CC(C)=C(C(=O)NN)C(C)=C1 WBKHIFPQJKGEOJ-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 229920002396 Polyurea Polymers 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 239000002216 antistatic agent Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 125000000717 hydrazino group Chemical group [H]N([*])N([H])[H] 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 125000001261 isocyanato group Chemical group *N=C=O 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- GGZSXNGEPOXZRP-UHFFFAOYSA-N sulfanyl dihydrogen phosphate Chemical compound OP(O)(=O)OS GGZSXNGEPOXZRP-UHFFFAOYSA-N 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
- H01L21/566—Release layers for moulds, e.g. release layers, layers against residue during moulding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
- H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
- H01L2924/18161—Exposing the passive side of the semiconductor or solid-state body of a flip chip
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
本發明有關於遮蔽膠帶,其用於晶片曝露覆晶封裝(DEFCP)之模底部充填(MUF)過程中。
在半導體工業中使用鉛框架之QFP(四邊平直封裝)、QFN(四邊平直無鉛)封裝等所用的模製用膜,其模樹脂之釋出性質或模的釋出性質是最重要的,氟基聚合物、像聚四氟乙烯(PTFE)、聚四氟乙烯乙酯(ETFE)及類似物,以及聚對苯二甲酸亞乙酯(PET)等已被利用為耐熱基材。
近來,PoP(封裝上封裝)形態之結構愈來愈多地使用於利用凸塊的覆晶封裝,凸塊係外部連接端,其取代了晶片與基材連接用的焊線。雖然底部充填過程被用來防止覆晶的破裂以及增加熱的消散,但這種底部充填過程會引生低的可靠性及生產力。因此,一種模底部充填過程之新的技術被發展出來以增加效率。該新技術係將複數個相同的晶片連接到基材上,隨之同時以EMC(環氧樹脂模化合物)模壓及覆晶底部充填過程來處理,最後,將其切成一個一個的晶片。為了利用PoP形態之結構,在MUF過程中,要使用到可以模塑之膠帶,其可避免晶片之表面碰到模樹脂,且可遮蔽晶片。
在MUF過程中,也可另外實施電漿處理以改善封裝的可靠
性。若在MUF過程之前實施電漿處理,則表面變活化,可加強對模樹脂之黏著或親和,藉此可改善封裝之可靠性。此外,電漿處理也會使晶片表面有物理化學上的活性,此活化的晶片表面會與模製用膜起反應,故在過程之後,在模釋出時,會有膜之片斷殘留在晶片表面上,而引起污染之問題。
像傳統的氟基PTFE或聚四氟乙烯乙酯(ETFE)這種簡單的模製用膜,在晶片曝露覆晶封裝之MUF過程中於高溫(180℃)下實施時,會有相當大的熱變形,因膜之張應力或模樹脂之傳送壓力的作用,膜之厚度會不均勻,進而使晶片表面產生壓力梯度,這些晶片係各自連接到焊球,故焊球可能會變形,而產生變形或破裂(參看第1圖)。換句話說,這種情形會對晶片曝露覆晶封裝的可靠性造成致命的反效果。由於PET膜具有耐熱性質,諸如在MUF過程之溫度下具有低的熱收縮及合適的彈性係數而沒有任何可靠性之問題,但尚未反應的低分子量寡聚體會流出而污染模製設備之元件。若以聚醯亞胺(PI)膜做為黏著層,在一般聚合體膜中,聚醯亞胺具有優良的耐熱性質,雖然此種膜表現較低的物理變形及較高的強度,但將其應用到模或設備時,由於其具有較低的撓曲性,故會有可加工性之問題。甚且,因為PI膜於MUF過程之溫度下具有高的彈性係數,模樹脂之傳輸壓力無法被PI膜吸收或鬆釋,而通過晶片與焊球間之界面並到達焊球與基材間之界面,因而導致焊球之破裂及其後之可靠性。
本發明提供遮蔽膠帶,用於晶片曝露覆晶封裝(DEFCP)技術中之模底部充填(MUF)之過程,其可克服上述之習知技藝之問題而能改善可靠度並能防止封裝之污染。
本發明所提供用於晶片曝露覆晶封裝(DEFCP)技術中之模底部充填(MUF)過程之遮蔽膠帶,其包括耐熱基材及塗覆在耐熱基材上之黏膠層。
依據本發明之用於晶片曝露覆晶封裝(DEFCP)技術中之模底部充填(MUF)之過程的遮蔽膠帶,其功效為改善覆晶封裝之可靠度並防止覆晶封裝之污染。
本發明之較佳實施例將參考附圖詳細說明於後。應瞭解到,本發明之較佳實施例的詳細說明僅用來說明而已,對本技藝領域之專業人員而言,對其做各種變化與修正,仍屬於本發明之精神與範圍。
本發明之晶片曝露覆晶封裝(DEFCP)之模底部充填(MUF)過程所用之遮蔽膠帶包括一耐熱基材及塗覆在耐熱基材上的黏膠層。
耐熱基材可以是可耐180℃左右的聚合物樹脂,該溫度係MUF過程中所需之溫度。例如,聚萘二酸乙二醇酯(polyethylene naphthalate,PEN)可用來當做耐熱基材。耐熱基材之厚度在25μm到50μm之間為較佳。若基材厚度小於25μm,則基材膜容易起皺
紋,而將使皺紋轉移到模製封裝之表面上;若基材厚度大於50μm,則基材膜之撓曲性變差而導致不好的可加工性。在PEN膜之一邊或二邊也可塗覆一層抗靜電劑,以防止在MUF過程或膠帶釋出過程時發生靜電現象而使封裝毀壞。
塗覆在耐熱基材上之黏膠層可包括壓克力樹脂、熱固化劑、能量束可固化寡聚樹脂、及光引發劑,其特性在於可被熱或能量束固化。
壓克力樹脂可以是烷基(甲基)丙烯酸塩,例如甲基(甲基)丙烯酸塩、乙基(甲基)丙烯酸塩、丁基(甲基)丙烯酸塩、異辛基(甲基)丙烯酸塩、異壬基(甲基)丙烯酸塩、癸基(甲基)丙烯酸塩、十二烷基(甲基)丙烯酸塩等等。可以使用單一的上述壓克力樹脂,或是使用二種或更多種的上述壓克力樹脂的混合物.較佳地,壓克力樹脂之平均分子量在100,000到1,500,000之間,更佳地,在500,000到1,000,000之間。若平均分子量小於100,000,則在膠帶釋出之後,因為塗覆後之黏膠層缺少內部凝聚力,故樹脂成份傾向殘留在電漿活化晶片之表面上.若平均分子量大於1,500,000,則因為溶解在溶劑之溶解度變小,故不易形成均勻的塗覆層,以致惡化熱固化及能量束固化之效率。
熱固化劑之例子可包括異氰酸塩基、環氧樹脂基、氮丙啶及螫合物基的交連劑。較佳地,每100份重量的壓克力樹脂中使用0.1到2份重量的熱固化劑。
能量束可固化寡聚樹脂可以是能量束可固化尿烷樹脂及能量
束可固化矽樹脂之混合物。較佳地,能量束可固化寡聚樹脂之活性官能基的數目係在2到6之間,而這種能量束可固化寡聚樹脂之平均分子量係在300到8,000之間。能量束可固化寡聚樹脂與光引發劑反應而形成具有壓克力樹脂的半IPN結構,其可增強黏膠層之內部的凝聚力,藉此可避免在高溫的MUF過程之後在晶片上形成任何的黏膠殘留物。能量束可固化樹脂可增強黏膠層之耐熱性及堅固性,而能量束可固化矽樹脂可改善模樹脂之釋出的性質並減少與電漿活化晶片之表面的反應。較佳地,在黏膠層中,每100份重量的壓克力樹脂中含有5到30份重量的能量束可固化脲烷樹脂,以及每100份重量的壓克力樹脂中有5到15份重量的能量束可固化矽樹脂。如果能量束可固化脲烷樹脂少於5份重量,則能量束可固化脲烷樹脂實際上無法增強黏膠層之堅實性,而若高於30份重量,則能量束固化之效率降低,而使部分尚未反應之寡聚體樹脂殘留在晶片表面成為黏膠殘渣。若能量束可固化矽樹脂少於5份重量,則無法達到釋出性質,而若高於15份量,則矽基樹脂會彼此凝聚在一起,而以外來物體存在黏膠層中,或是由於釋出性質之過多增強,黏膠層與晶片表面間會滲存模樹脂,而造成晶片表面之污染。
光引發劑可包括苯甲基二甲基酮縮醇、羥基環己基苯酮、羥基二甲基苯乙酮、甲基-[4-甲基苯硫基]-2-嗎啉丙酮、4-苯甲基-4’-甲基二苯基硫化物、異丙基噻噸酮、2-氯噻噸酮、乙基-4-二甲基氨基甲苯酸塩、2-乙基己基-4-二甲基氨基甲苯酸塩、二苯甲酮、
4-甲基 二苯甲酮、甲基-正-苯並-甲苯酸塩、甲基苯甲醯甲酸塩、4-苯基二苯甲酮、2,4,6-三甲基 苯甲醯基-二苯基磷化氫、2-羥基-1,2-二苯基乙酮等等。光引發劑之選擇可依黏膠層之塗層及乾燥溫度,以及所用能量束之照射條件來決定。光引發劑被使用較佳的量是在每100份重量的能量束可固化寡聚樹脂中填加1到10份的重量。
下面將詳細說明本發明之較佳實施例及比較性例子。然而,本發明不受限於這些實施例。
壓克力樹脂:(來自Samwon之AT5100);熱固化劑:異氰酸塩基(來自Dow Corning之CE138);能量束可固化脲烷樹脂:脂族聚脲丙烯酸塩(來自Nippon Synthetic Co.,Ltd之UV7600B80);能量束可固化矽樹脂:矽己丙烯酸塩(來自Cytec之EB1360)
光引發劑:醯基磷化氫基(來自Cytec之Darocur TPO)。
首先將100份重量的壓克力樹脂(其平均分子量約350,000)溶解入600份重量的乙酸乙酯中,再將0.5份重量的熱固化劑、25份重量的能量束可固化脲烷樹脂、10份重量的能量束可固化矽樹脂、及1份重量的光引發劑混合在一起,且攪拌1小時,以得到
黏膠成份。攪拌之後,將黏膠成份塗覆在38μm厚的聚萘二酸乙二醇酯(PEN)膜上,再將此具有黏膠成份的膜置入乾燥箱中於150℃烘約3分鐘。塗膜之厚度被確定為約6μm。通過乾燥箱後之膠帶以能量束固化,在本實施例中特別係以紫外線照射,藉此形成額外的交連結構。紫外線照射的量被設定為約500mJ/cm2
,其係適當地調整UV燈的強度,燈與照射表面之距離、照射時間等等來達成。為了達到黏膠層完全的固化,使用無電極之UV燈,其可輻射紫外線A波段(315nm to 400nm)之能量束,且在氮氣氣氛下照射紫外線,藉此防止在能量束固化時因氧氣而使功效降低。
將100份重量的壓克力樹脂溶解在600份重量的乙酸乙酯中,再將0.5份重量的固熱化劑及1份重量的光引發劑混合在一起並攪拌1小時,以得到黏膠成份。攪拌之後,將黏膠成份塗覆在38μm厚之PEN膜上,再將此塗有黏膠成份的膜置入乾燥箱中於150℃下乾燥約3分鐘。此塗膜之厚度被確定為約6μm。
將100份重量的壓克力樹脂溶解在600份重量的乙酸乙酯中,再將0.5份重的熱固化劑、25份重量的能量束可固化脲烷樹脂、50份重量的能量束可固化矽樹脂、及1份重量的光引發劑混合在一起,並攪拌1小時,以得到黏膠成份。攪拌之後,將黏膠
成份塗覆在厚約38μm之聚萘二酸乙二醇酯(PEN)膜上,再將塗有黏膠成份之膜置入乾燥箱中於150℃下乾燥約3分鐘。此塗膜之厚度被確定為約6μm。乾燥後之黏膠層再經紫外線照射加以能量束固化,如實施例1中之所為。
將實施例1中所用之相同的黏膠成份塗覆在38μm厚之PET膜上,且在相同的條件下製備黏膠層。
將實施例1中所用之相同的黏膠成份塗覆在35μm厚之PI(聚亞胺)膜上,且在相同的條件下製備黏膠層。
使用沒有黏膠層的50μm厚的聚四氟乙烯乙酯(ETFE)膜。
依據上述之實施例1及比較性例1到5之各遮蔽膠帶被使用於晶片曝露覆晶封裝技術之模底部充填之過程中並加以評估,其結果顯示於下面之表1中。評估表項目包括對於實施MUF過程之設備的可應用性及可加工性,以及遮蔽膠帶之可靠度。
可由表1看出,對於晶片曝露覆晶封裝技術之模底部充填過程所需之主要性質可在實施例1與比較性例1到5之間相互比較。
在實施例1中,其黏膠層係在具有壓克力樹脂及能量束可固化脲烷與矽烷之PEN膜上形成半IPN結構而形成,而在比較性例1到5中,使用不同種類的基膜及修正過的黏膠層。
依據本發明之實施例1,其主要的所需性質均在滿意的水準上。對於比較性例1而言,因為不使用能量束可固化寡聚樹脂而沒有半IPN結構,可以確定,在電漿活化晶片之表面上有殘留黏膠成份。在比較性例2中,為了增強釋出性質而填加額外量的能量束可固化寡聚矽樹脂,造成黏膠層有不規則的表面,而在有應變之晶片表面上有殘留的黏膠成份。此外,因過量的矽成份致使模樹脂在模製過程中滲透入黏膠層與晶片表面間之界面,而令黏膠層對晶片表面之黏著力不好,同時也污染了部分的晶片表面。在比較性例3中,其使用PET膜,雖然其滿足了其它主要的性質,但在MUF過程進行中,因其上膜直接接觸到PET膜,故嚴重污染了白色的外來物質。因為這種污染增加了清潔時間及停止時間,致使生產率嚴重的下降。在比較性例4中,其使用PI膜,雖然膜沒有污染,縱使膠帶可經由真空洞(如第1圖所示)黏附到上模,但由於PI膜的高強度會降低對上模之黏附力,而且由於撓曲性不佳,其可加工性也變差。甚且,亦可觀察到焊球的變形或破裂。在比較性例5中,其僅使用聚四氟乙烯乙酯(ETFE)膜,相對於PI膜,聚四氟乙烯乙酯(ETFE)膜之耐熱性很差,在高溫時會使膜有不規則的伸長,進而引起膜厚度的改變,因為無法平衡通到晶片之壓力,故可觀察到焊球的變形或破裂。甚者,因為缺少黏
附力,在表面平滑的矽晶片與表面粗糙的膜之間無法彼此黏附,故造成模樹脂污染了晶片。
本發明已藉由實施例與例子詳細地做了說明,這些實施例已經由本發明實施過,但應了解到,在不背離本發明之精神與範圍下,有關本技藝領域之專業人員仍可對這些實施例做各種不同的變化與修正。
A1‧‧‧上模
A2‧‧‧下模
A3‧‧‧耐熱基材(PEN膜)
A4‧‧‧黏膠層
A5‧‧‧晶片
A6‧‧‧焊球
A7‧‧‧PCB(印刷電路板)
A8‧‧‧模樹脂
第1圖是一示意圖,顯示晶片曝露覆晶封裝之模底部充填過程。
第2圖是一示意圖,顯示MUF過程完成後的產品。
A1‧‧‧上模
A2‧‧‧下模
A3‧‧‧耐熱基材(PEN膜)
A4‧‧‧黏膠層
A5‧‧‧晶片
A6‧‧‧焊球
A7‧‧‧PCB(印刷電路板)
Claims (6)
- 一種用於晶片曝露覆晶封裝(DEFCP)之模底部充填(MUF)過程中之遮蔽膠帶,其包括耐熱基材及塗覆在耐熱基材上的黏膠層,其特徵在於耐熱基材是聚萘二酸乙二醇酯(PEN)膜,且耐熱基材有25μm到50μm之厚度;該黏膠層係包括壓克力樹脂、熱固化劑、能量束可固化寡聚體樹脂及光引發劑,且該黏膠層為可被熱與能量束固化者,且該能量束可固化寡聚體樹脂之平均分子量係在300到8,000之間且為脲烷樹脂與矽樹脂之混合物。
- 如申請專利範圍第1項所述之用於晶片曝露覆晶封裝之模底部充填過程中的遮蔽膠帶,其特徵在於耐熱基材至少一個表面有抗靜電塗層。
- 如申請專利範圍第1項所述之用於晶片曝露覆晶封裝之模底部充填過程中的遮蔽膠帶,其特徵在於該壓克力樹脂係選自由甲基(甲基)丙烯酸塩、乙基(甲基)丙烯酸塩、丁基(甲基)丙烯酸塩、異辛基(甲基)丙烯酸塩、異壬基(甲基)丙烯酸塩、癸基(甲基)丙烯酸塩、十二烷基(甲基)丙烯酸塩以及前述物質之混合物所組成之群組,且該壓克力樹脂具有在100,000到1,500,000之間之平均分子量。
- 如申請專利範圍第1項所述之用於晶片曝露覆晶封裝之模底部充填過程中的遮蔽膠帶,其特徵在於該光引發劑係包括由苯甲 基二甲基酮縮醇、羥基環己基苯酮、羥基二甲基苯乙酮、甲基-[4-甲基苯硫基]-2-嗎啉丙酮、4-苯甲基-4’-甲基二苯基 硫化物、異丙基噻噸酮、2-氯噻噸酮、乙基-4-二甲基氨基甲苯酸塩、2-乙基己基-4-二甲基氨基甲苯酸塩、二苯甲酮、4-甲基 二苯甲酮、甲基-正-苯並-甲苯酸塩、甲基苯甲醯甲酸塩、4-苯基二苯甲酮、2,4,6-三甲基 苯甲醯基-二苯基磷化氫以及2-羥基-1,2-二苯基乙酮所組成之群組中至少一者。
- 如申請專利範圍第1項所述之用於晶片曝露覆晶封裝之模底部充填過程中的遮蔽膠帶,其特徵在於該熱固化劑係包括由異氰酸塩基、環氧樹脂基、氮丙啶及螫合物基所組成之群組中至少一者。
- 如申請專利範圍第1項所述之用於晶片曝露覆晶封裝之模底部充填過程中的遮蔽膠帶,其包括在每100重量份的壓克力樹脂中有0.1到2重量份的熱固化劑、5到30重量份的能量束可固化脲烷樹脂及5到15重量份的能量束可固化矽樹脂,且包括在每100重量份的能量束可固化寡聚體樹脂中有1到10重量份的光引發劑。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110005902A KR101194544B1 (ko) | 2011-01-20 | 2011-01-20 | 다이 익스포즈드 플립칩 패키지(defcp)의 몰드 언더필 공정용 점착 마스킹 테이프 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201245384A TW201245384A (en) | 2012-11-16 |
TWI504717B true TWI504717B (zh) | 2015-10-21 |
Family
ID=46715407
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW100121211A TWI504717B (zh) | 2011-01-20 | 2011-06-17 | 用於晶片曝露覆晶封裝之模底部充填過程中的遮蔽膠帶 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5659408B2 (zh) |
KR (1) | KR101194544B1 (zh) |
MY (1) | MY159063A (zh) |
TW (1) | TWI504717B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5942321B2 (ja) * | 2012-09-21 | 2016-06-29 | 東レ先端素材株式会社Toray Advanced Materials Korea, Inc. | モールドアンダーフィル工程のマスキングテープ用粘着剤組成物及びそれを利用したマスキングテープ |
JP6204051B2 (ja) * | 2013-04-19 | 2017-09-27 | 株式会社巴川製紙所 | モールド成形用離型シート |
JP5858347B2 (ja) * | 2014-02-05 | 2016-02-10 | 大日本印刷株式会社 | 粘着剤組成物およびそれを用いた粘着フィルム |
WO2019130539A1 (ja) * | 2017-12-28 | 2019-07-04 | リンテック株式会社 | 粘着シート及び半導体装置の製造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005280211A (ja) * | 2004-03-30 | 2005-10-13 | Gunze Ltd | ダイシング用基体フイルム |
CN100362035C (zh) * | 2003-01-31 | 2008-01-16 | 日本瑞翁株式会社 | 制备环烯树脂膜的方法和制备环烯聚合物片或膜的方法 |
CN101186792A (zh) * | 2006-11-24 | 2008-05-28 | 日东电工株式会社 | 半导体装置制造用耐热性胶粘带 |
KR20100073613A (ko) * | 2008-12-23 | 2010-07-01 | 도레이첨단소재 주식회사 | 반도체 장치용 내열 점착테잎 |
TW201026808A (en) * | 2008-08-27 | 2010-07-16 | Nitto Denko Corp | Adhesive tape or sheet |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2661950B2 (ja) * | 1988-03-31 | 1997-10-08 | 古河電気工業株式会社 | 半導体ウエハ固定用放射線硬化性粘着テープ |
JP4393934B2 (ja) * | 2004-06-23 | 2010-01-06 | リンテック株式会社 | 半導体加工用粘着シート |
JP4805765B2 (ja) * | 2006-09-12 | 2011-11-02 | 電気化学工業株式会社 | 電子部品固定用粘着シート及びそれを用いた電子部品の製造方法。 |
-
2011
- 2011-01-20 KR KR1020110005902A patent/KR101194544B1/ko active IP Right Grant
- 2011-06-08 JP JP2011128433A patent/JP5659408B2/ja not_active Expired - Fee Related
- 2011-06-13 MY MYPI2011002715A patent/MY159063A/en unknown
- 2011-06-17 TW TW100121211A patent/TWI504717B/zh not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100362035C (zh) * | 2003-01-31 | 2008-01-16 | 日本瑞翁株式会社 | 制备环烯树脂膜的方法和制备环烯聚合物片或膜的方法 |
JP2005280211A (ja) * | 2004-03-30 | 2005-10-13 | Gunze Ltd | ダイシング用基体フイルム |
CN101186792A (zh) * | 2006-11-24 | 2008-05-28 | 日东电工株式会社 | 半导体装置制造用耐热性胶粘带 |
TW201026808A (en) * | 2008-08-27 | 2010-07-16 | Nitto Denko Corp | Adhesive tape or sheet |
KR20100073613A (ko) * | 2008-12-23 | 2010-07-01 | 도레이첨단소재 주식회사 | 반도체 장치용 내열 점착테잎 |
Also Published As
Publication number | Publication date |
---|---|
JP5659408B2 (ja) | 2015-01-28 |
KR101194544B1 (ko) | 2012-10-25 |
MY159063A (en) | 2016-12-15 |
TW201245384A (en) | 2012-11-16 |
JP2012149210A (ja) | 2012-08-09 |
KR20120084501A (ko) | 2012-07-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9090800B2 (en) | Adhesive tape for manufacturing electronic components | |
TWI504717B (zh) | 用於晶片曝露覆晶封裝之模底部充填過程中的遮蔽膠帶 | |
TW201900801A (zh) | 半導體密封成形用暫時保護膜 | |
JP2006219589A (ja) | 半導体用接着フィルム及びこれを用いた半導体装置 | |
JP4059497B2 (ja) | ダイボンド用接着フィルム、ダイシング・ダイボンド用接着フィルム、及び半導体装置 | |
JP2007308694A (ja) | 半導体用接着部材、半導体装置及び半導体装置の製造方法 | |
TW201109406A (en) | Lamination method of adhesive tape and lead frame | |
JP2011165716A (ja) | 熱硬化型ダイボンドフィルム、ダイシング・ダイボンドフィルム、及び、半導体装置 | |
KR20170101603A (ko) | 내열성이 향상된 전자부품용 점착테이프 | |
JP6988923B2 (ja) | 半導体装置の製造方法、及びフィルム状接着剤 | |
TW202025315A (zh) | 半導體裝置製造用的臨時保護膜、捲軸體以及製造半導體裝置的方法 | |
JP4931125B2 (ja) | ダイシング・ダイボンドフィルム | |
KR101147841B1 (ko) | 전자부품 제조용 점착테이프 | |
JP2008277806A (ja) | 半導体用接着部材、半導体装置及び半導体装置の製造方法 | |
CN116391246A (zh) | 保护性胶带、由其制得的制品、以及其制造和使用方法 | |
JP5894035B2 (ja) | 半導体装置の製造方法 | |
KR101050562B1 (ko) | 반도체 패키지용 몰드공정필름 | |
JP6242679B2 (ja) | 半導体装置用樹脂フィルム、及び、半導体装置の製造方法 | |
KR20200045758A (ko) | 반도체 회로 접속용 접착제 조성물 및 이를 포함한 접착 필름 | |
JP2015103573A (ja) | 熱硬化型ダイボンドフィルム、ダイシングシート付きダイボンドフィルム、及び、半導体装置の製造方法 | |
JP5436524B2 (ja) | ダイシング・ダイボンドフィルムの製造方法 | |
TWI817585B (zh) | 光固化保護膠帶及加工方法 | |
KR101368967B1 (ko) | 반도체장치용 나노복합형 점착제 조성물 및 이를 이용한 고내열 점착시트 | |
JP2019062016A (ja) | 半導体装置の製造方法 | |
KR20140085714A (ko) | 전자부품용 점착테이프 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |