TW201900801A - 半導體密封成形用暫時保護膜 - Google Patents

半導體密封成形用暫時保護膜 Download PDF

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Publication number
TW201900801A
TW201900801A TW107103074A TW107103074A TW201900801A TW 201900801 A TW201900801 A TW 201900801A TW 107103074 A TW107103074 A TW 107103074A TW 107103074 A TW107103074 A TW 107103074A TW 201900801 A TW201900801 A TW 201900801A
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Taiwan
Prior art keywords
protective film
temporary protective
semiconductor
lead frame
sealing
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TW107103074A
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English (en)
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TWI793101B (zh
Inventor
友利直己
名児耶友宏
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日商日立化成股份有限公司
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Publication of TW201900801A publication Critical patent/TW201900801A/zh
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Publication of TWI793101B publication Critical patent/TWI793101B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
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    • H01L21/568—Temporary substrate used as encapsulation process aid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B25/00—Layered products comprising a layer of natural or synthetic rubber
    • B32B25/04—Layered products comprising a layer of natural or synthetic rubber comprising rubber as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B25/08—Layered products comprising a layer of natural or synthetic rubber comprising rubber as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
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Abstract

本發明揭示一種半導體密封成形用暫時保護膜10，其包括：支撐膜1；以及接著層2，設置於支撐膜1上，含有丙烯酸橡膠。半導體密封成形用暫時保護膜10在200℃下的固體剪切彈性模數可為5.0 MPa以上。

Description

半導體密封成形用暫時保護膜
本發明有關於一種半導體密封成形用暫時保護膜。本發明亦有關於一種帶暫時保護膜的引線框架、帶暫時保護膜的密封成形體及半導體裝置的製造方法。
先前，一直使用如下結構的半導體封裝：藉由銀糊劑等接著劑而將半導體元件接著於模墊上，利用金屬線將其與引線框架接合後，留出外部連接用的外引線而將整體密封。但是，伴隨近年來的半導體封裝的高密度化、小面積化、薄型化等要求的提高，提出有各種各樣結構的半導體封裝。作為此種半導體封裝，開發有如下結構的半導體封裝：僅將封裝的單面（半導體元件側）密封，並將背面露出的引線框架用於外部連接用途（例如，方形扁平無引線（Quad Flat Non-leaded，QFN）封裝）。該結構的半導體封裝中，引線框架未自密封樹脂突出，因此可實現小面積化及薄型化。但是，在密封成形時，有時產生密封樹脂繞入至引線框架背面等不良情況。
作為防止此種不良情況的方法，已知有如下方法：將半導體用接著膜貼附於引線框架背面而作為暫時保護膜來保護引線框架背面，將搭載於引線框架表面側的半導體元件密封成形後，剝離暫時保護膜（例如，專利文獻1）。 [現有技術文獻] [專利文獻]
[專利文獻1]國際公開第2001/035460號
[發明所欲解決之課題] 半導體密封成形中所使用的暫時保護膜理想為相對於引線框架而可在常溫條件之類的低溫下進行貼附，且在密封後容易剝離。但是，例如，專利文獻1的半導體用接著膜貼附於引線框架的背面，因此需要高溫×高壓條件（例如，200℃～250℃，3 MPa～8 MPa），難以進行常溫條件（不會有意地施加溫度的條件，例如24℃）下的貼附。 另外，專利文獻1的半導體用接著膜為了進行密封後的剝離，較佳為進行加熱處理。另一方面，於為常溫下的貼附性相對良好的膜的情況下，在進行密封後的自引線框架及密封材的剝離時，有時在引線框架側產生糊殘留等，在密封成形後的剝離性方面有改善的餘地。
因此，本發明的目的在於提供一種半導體密封成形用暫時保護膜，其可在常溫下貼附於引線框架，並且在密封成形後，可一邊抑制糊殘留，一邊容易自引線框架及密封層剝離。 [解決課題之手段]
本發明者等人為了解決所述課題而進行了銳意研究，結果發現藉由使用特定的接著層可解決所述課題，從而完成了本發明。
本發明的一方面有關於一種半導體密封成形用暫時保護膜，所述半導體密封成形用暫時保護膜包括：支撐膜；以及接著層，設置於所述支撐膜上，含有丙烯酸橡膠；並且所述半導體密封成形用暫時保護膜在200℃下的固體剪切彈性模數為5.0 MPa以上。
所述接著層亦可進而含有剝離性賦予劑。相對於所述丙烯酸橡膠100質量份，所述剝離性賦予劑的含量可為10質量份以上且未滿60質量份。
所述接著層的厚度可為1 μm以上且5 μm以下。
所述支撐膜可為聚醯亞胺膜。
所述丙烯酸橡膠可為包含選自由(甲基)丙烯酸丁酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸甲酯、(甲基)丙烯酸、丙烯腈、(甲基)丙烯酸-2-羥基乙酯及(甲基)丙烯酸縮水甘油酯所組成的群組中的至少一種的單體單元的共聚物。所述丙烯酸橡膠的重量平均分子量可為450000以上且900000以下。
所述接著層亦可在24℃下具有感壓接著性。所述半導體密封成形用暫時保護膜的5%重量減少溫度可為350℃以上。
所述半導體密封成形用暫時保護膜亦可進而包括覆蓋膜（cover film），所述覆蓋膜設置於所述接著層的與設置有所述支撐膜的面相反的一側的面上。
另外，本發明的一方面有關於一種帶暫時保護膜的引線框架，其包括：引線框架，具有模墊（die pad）及內引線（inner lead）；以及所述半導體密封成形用暫時保護膜；並且暫時保護膜以其接著層與引線框架的單面相接的方式貼附於引線框架。
另外，本發明的一方面有關於一種帶暫時保護膜的密封成形體，其包括：引線框架，具有模墊及內引線；半導體元件，搭載於模墊；金屬線，將半導體元件與內引線連接；密封層，將半導體元件及金屬線密封；以及所述半導體密封成形用暫時保護膜；並且暫時保護膜的接著層貼附於引線框架的與搭載有半導體元件的面相反的一側的面。
另外，本發明的一方面有關於一種製造半導體裝置的方法，其依序包括：將所述半導體密封成形用暫時保護膜於其接著層與引線框架相接的方向上貼附於引線框架的單面的步驟，所述引線框架具有模墊及內引線；將半導體元件搭載於模墊的與暫時保護膜相反的一側的面上的步驟；設置金屬線的步驟，所述金屬線將半導體元件與內引線連接；形成將半導體元件及金屬線密封的密封層，從而獲得具有引線框架、半導體元件及密封層的密封成形體的步驟；以及自密封成形體剝離暫時保護膜的步驟。
於引線框架具有多個模墊且在多個模墊上分別搭載半導體元件的情況下，所述製造半導體裝置的方法亦可進而包括如下步驟：在將暫時保護膜自密封成形體剝離之前或之後，將密封成形體分割而獲得具有一個模墊及半導體元件的半導體裝置。 [發明的效果]
根據本發明，可提供一種半導體密封成形用暫時保護膜，其可在常溫下貼附於引線框架，並且在自密封成形後的引線框架及密封材剝離時，可一邊抑制糊殘留，一邊容易剝離。
以下，對本發明的較佳實施形態進行詳細說明。但是，本發明並不限定於以下的實施形態。本說明書中所記載的數值範圍的上限值及下限值可任意地組合。實施例中所記載的數值亦可用作數值範圍的上限值或下限值。
於本說明書中，所謂「(甲基)丙烯酸」是指「丙烯酸」及「甲基丙烯酸」。
＜暫時保護膜＞ 圖1是表示一實施形態的暫時保護膜的剖面圖。圖1所示的暫時保護膜10包括：支撐膜1；以及接著層2，設置於支撐膜1的單面上。亦可於支撐膜1的兩面上形成接著層。圖2亦是表示一實施形態的暫時保護膜的剖面圖。圖2的暫時保護膜10’包括：支撐膜1；接著層2，設置於支撐膜1的一主面上；以及樹脂層（非接著層3），設置於支撐膜1的另一主面上，實質上不具有接著性。該些暫時保護膜藉由在形成將搭載於引線框架的半導體元件密封的密封層的密封成形的步驟中，貼附於引線框架的背面（與搭載半導體元件的面相反的一側的面），可用作用以在密封成形期間對引線框架進行暫時保護的半導體密封成形用暫時保護膜。
＜接著層＞ 接著層含有丙烯酸橡膠。丙烯酸橡膠通常為包含(甲基)丙烯酸酯作為單體單元的共聚物。丙烯酸橡膠例如為藉由包含(甲基)丙烯酸酯與(甲基)丙烯酸、芳香族乙烯基化合物、氰乙烯基化合物等其他單體的單體混合物的聚合反應而獲得的共聚物。
作為構成丙烯酸橡膠的(甲基)丙烯酸酯，例如可列舉：(甲基)丙烯酸丁酯（例如，(甲基)丙烯酸正丁酯）、(甲基)丙烯酸乙酯及(甲基)丙烯酸甲酯。(甲基)丙烯酸酯例如可為(甲基)丙烯酸-2-羥基乙酯及(甲基)丙烯酸縮水甘油酯之類的具有反應性官能基的化合物。但是，丙烯酸橡膠可為包含選自由(甲基)丙烯酸丁酯、(甲基)丙烯酸乙酯及(甲基)丙烯酸甲酯所組成的群組中的至少一種的(甲基)丙烯酸酯作為單體單元的主成分的共聚物。該情況下，在丙烯酸橡膠的側鏈中官能基少，因此可抑制由熱處理所引起的與被黏著體表面的反應，接著層自被黏著體的剝離性更良好。另外，若使用包含具有直鏈的烴基的單體作為單體單元的丙烯酸橡膠，則有接著層對於被黏著體的潤濕擴展性變得良好的傾向。此處，所謂「主成分」是指相對於共聚物的整體質量而佔50質量%以上的單體單元。
作為構成丙烯酸橡膠的其他單體，例如可列舉(甲基)丙烯酸及丙烯腈。
於丙烯酸橡膠包含選自由(甲基)丙烯酸及(甲基)丙烯酸-2-羥基乙酯所組成的群組中的至少一種作為單體單元的情況下，丙烯酸橡膠亦可具有羧基及/或羥基。可將該羧基及/或羥基用於與後述的剝離性賦予劑的反應。
就維持接著層在常溫下的貼附性的觀點而言，丙烯酸橡膠的玻璃轉移溫度（Tg）可為-50℃～40℃、-40℃～30℃或-30℃～20℃。於丙烯酸橡膠的玻璃轉移溫度為-50℃以上的情況下，藉由熱處理而潤濕性變小，因此有相對地抑制剝離性的降低的傾向。於丙烯酸橡膠的玻璃轉移溫度為20℃以下的情況下，有相對地抑制常溫下的貼附性的減低的傾向。此處，丙烯酸橡膠的玻璃轉移溫度並無特別限定，但通常是指藉由示差掃描熱量測定、示差熱測定、動態黏彈性測定或熱機械分析而測定的值。
丙烯酸橡膠為將選自由(甲基)丙烯酸丁酯、(甲基)丙烯酸乙酯及(甲基)丙烯酸甲酯所組成的群組中的至少一種的單體單元設為主成分的共聚物，且丙烯酸橡膠的玻璃轉移溫度可為-30℃～20℃。該情況下，對於被黏著體的潤濕擴展性變得良好，並且可以特別高的水準兼顧接著性及剝離性。
就保持低逸氣性及凝聚力的觀點而言，丙烯酸橡膠的重量平均分子量可為400000以上、450000以上或700000以上。丙烯酸橡膠的重量平均分子量並無特別限制，可為900000以下。此處的丙烯酸橡膠的重量平均分子量是指藉由凝膠滲透層析法而測定的值（利用標準聚苯乙烯的換算值）。
丙烯酸橡膠亦可使用以市售品的形式而獲取者。作為丙烯酸橡膠的市售品，例如可列舉HTR-280 DR（長瀨化成（Nagase ChemteX）股份有限公司製造，重量平均分子量80萬～90萬）、WS-023 EK30（長瀨化成（Nagase ChemteX）股份有限公司製造，重量平均分子量45萬～50萬）。該些丙烯酸橡膠可單獨使用一種，亦可組合使用兩種以上。
接著層中的丙烯酸橡膠的含量以接著層的質量為基準而可為50質量%以上、60質量%以上、70質量%以上或80質量%以上，可為100質量%以下。
含有丙烯酸橡膠的接著層可具有常溫下的良好的貼附性。換言之，接著層可在不會有意施加溫度、例如24℃下具有感壓接著性。所謂「在24℃下具有感壓接著性」是指如下情況：於在不會有意施加溫度、例如溫度24℃的條件下，以20 N的負重對接著層（40 mm×160 mm尺寸）與引線框架（50 mm×157 mm尺寸）進行壓接的情況下，接著層相對於引線框架的接著力為5 N/m以上。再者，該接著力可依據後述的實施例中記載的方法來測定。
暫時保護膜在200℃下的固體剪切彈性模數（以下，亦簡稱為「固體剪切彈性模數」）為5.0 MPa以上。暫時保護膜在200℃下的固體剪切彈性模數可為6 MPa以上、8 MPa以上或10 MPa以上，可為25 MPa以下或20 MPa以下。藉由暫時保護膜的固體剪切彈性模數為該些範圍內，可更進一步抑制密封成形後的相對於引線框架及密封層的糊殘留。
此處的固體剪切彈性模數是指如下值：將具有5 mm×8 mm尺寸的暫時保護膜的試驗片放置於固體剪切測定夾具上，使用動態黏彈性測定裝置（例如，UBM股份有限公司製造，Rheogel-E4000），在正弦波、30℃～250℃、升溫速度5℃/min、頻率400 Hz的條件下測定而得的值。作為試驗片，可使用包含支撐膜及接著層的積層體。
此處，於半導體裝置的製造中，打線接合步驟例如在如下條件下進行：在200℃～270℃下加熱3分鐘～60分鐘，同時利用超音波與按壓壓力。於此種條件的打線接合步驟中，接著層變軟，因此有時產生無法正確地配置金屬線的不良情況。另外，亦有時產生由接著層的熱分解所產生的逸氣污染半導體元件及內引線面的不良情況。於暫時保護膜的固體剪切彈性模數為所述範圍內的情況下，亦可更進一步抑制打線接合步驟中的該些不良情況。
有接著層的厚度（膜厚）越薄，固體剪切彈性模數越高的傾向。例如，關於含有丙烯酸橡膠的接著層，藉由以1 μm～5 μm的範圍調節厚度，可容易將暫時保護膜在200℃下的固體剪切彈性模數設為5.0 MPa以上。
就抑制或防止打線接合時的不良情況（例如，金屬線的未接著、金屬線斷裂、金屬線的接著強度不足）的觀點而言，接著層的厚度可為5 μm以下或3 μm以下。就相同的觀點而言，接著層的厚度（膜厚）可為1 μm以上，亦可為2 μm以上。
接著層亦可進而含有剝離性賦予劑。所謂剝離性賦予劑是與接著層不含有剝離性賦予劑的情況相比而使密封成形後的接著層相對於引線框架及/或密封層的接著力降低的成分。
作為剝離性賦予劑，可使用脂肪族化合物。所謂脂肪族化合物是具有直鏈狀、分支狀或脂環式的烴基的化合物。脂肪族化合物可具有選自由環氧基及羥基所組成的群組中的至少一種官能基，亦可具有環氧基。換言之，剝離賦予劑可為脂肪族環氧樹脂。另外，脂肪族化合物可為水溶性。就以上的觀點而言，剝離性賦予劑亦可包含具有烴基與環氧基的脂肪族環氧樹脂，所述烴基包含可具有側鏈（經分支）的碳數2以上的主鏈，所述環氧基結合於主鏈的末端。具體而言，剝離性賦予劑亦可包含選自由(聚)乙二醇二縮水甘油醚、山梨糖醇聚縮水甘油醚及甘油聚縮水甘油醚所組成的群組中的至少一種的脂肪族化合物（或脂肪族環氧樹脂）。該些脂肪族化合物可單獨使用一種，亦可併用兩種以上，就進一步抑制糊殘留的觀點而言，較佳為併用兩種以上。
於丙烯酸橡膠包含選自由(甲基)丙烯酸及丙烯酸-2-羥基乙酯所組成的群組中的至少一種作為單體單元，且使用具有環氧基的脂肪族化合物作為剝離性賦予劑的情況下，自引線框架及密封層的剝離性更進一步良好，並且更進一步有效地進行接著層殘留於引線框架及密封層上時的清洗處理。推測其原因在於：藉由剝離性賦予劑的環氧基與丙烯酸橡膠的側鏈的羥基及/或羧基的反應，與丙烯酸橡膠相比，以原本為低分子量體且具有溶解性的剝離性賦予劑為契機而清洗性提高。
相對於丙烯酸橡膠100質量份，剝離性賦予劑的含量可為6質量份以上或10質量份以上，可為未滿60質量份、50質量份以下或30質量份以下。於剝離性賦予劑的含量未滿60質量份的情況下，可抑制接著層與支撐膜的密接性的降低，有接著層變得難以剝離的傾向。於剝離性賦予劑的含量為6質量份以上的情況下，有更容易確保充分的剝離性及清洗性的傾向。
接著層視需要亦可進而含有其他成分。作為其他成分，例如可列舉胺基醇酸樹脂、脂肪酸。
接著層相對於引線框架及密封層的接著力在密封成形後可為450 N/m以下，亦可為300 N/m以下。密封成形後的相對於引線框架及密封層的接著力可依據後述實施例的記載的方法來測定。
暫時保護膜的5%重量減少溫度可為350℃以上。藉此，逸氣量減少，打線接合性更進一步良好。暫時保護膜的5%重量減少溫度可為500℃以下，亦可為450℃以下。5%重量減少溫度可使用示差熱天秤（例如，精工儀器（Seiko Instruments）股份有限公司製造，SSC5200型），在升溫速度10℃/min、空氣環境下的條件下進行測定。
＜支撐膜＞ 支撐膜並無特別限制，可為耐熱性樹脂膜。於使用耐熱性樹脂膜作為支撐膜的情況下，即便為高溫條件（例如，200℃以上），支撐膜亦不軟化而作業性更進一步優異。具體而言，就提高耐熱性的觀點而言，支撐膜的玻璃轉化溫度（Tg）可為200℃以上或250℃以上。
作為構成支撐膜的耐熱性樹脂，可列舉：芳香族聚醯亞胺、芳香族聚醯胺、芳香族聚醯胺醯亞胺、芳香族聚碸、芳香族聚醚碸、聚苯硫醚、芳香族聚醚酮、聚芳酯、芳香族聚醚醚酮、聚萘二甲酸乙二酯、聚對苯二甲酸乙二酯等。
就具有耐熱性且可進一步提高相對於接著層的密接性的方面而言，支撐膜可為聚醯亞胺膜。於使用聚醯亞胺膜作為支撐膜的情況下，聚醯亞胺膜亦可進行電漿處理、電暈處理、底漆處理等高密接處理。於支撐膜相對於接著層的密接性低的情況下，在自引線框架及密封層剝離暫時保護膜時，在接著層與支撐膜的界面產生剝離，在引線框架及密封層側容易殘留接著層。因此，支撐膜較佳為相對於接著層的密接性充分高。
支撐膜的厚度（膜厚）並無特別限制，但就使與將暫時保護膜貼附於引線框架後的引線框架的翹曲等相關的殘存應力減低的觀點而言，可為100 μm以下、50 μm以下或25 μm以下。支撐膜的厚度可為5 μm以上或10 μm以上。
於一實施形態的暫時保護膜中，支撐膜的厚度可為5 μm以上且50 μm以下，接著層的厚度可為1 μm以上且5 μm以下。
＜覆蓋膜＞ 所述半導體密封成形用暫時保護膜亦可包括覆蓋膜，所述覆蓋膜設置於所述接著層的與設置有所述支撐膜的面相反的一側的面上。即，所述半導體密封成形用暫時保護膜亦可為帶覆蓋膜的半導體密封成形用暫時保護膜的形態。所述覆蓋膜並無特別限制，可為聚對苯二甲酸乙二酯膜，亦可為設置有剝離層的聚對苯二甲酸乙二酯膜。
所述覆蓋膜的厚度可為10 μm以上且100 μm以下或20 μm以上且100 μm以下。
圖2的實施形態的暫時保護膜10’所具有的非接著層3為在0℃～270℃下實質上不具有相對於引線框架的接著性（或感壓接著性）的樹脂層。例如，具有高的玻璃轉移溫度的樹脂層可作為非接著層發揮功能。具體而言，非接著層例如可為包含聚醯胺醯亞胺的樹脂層。非接著層的厚度並無特別限制，例如可為1 μm～10 μm。
＜暫時保護膜的製造方法＞ 一實施形態的暫時保護膜例如可藉由以下的方法來製造。首先，將丙烯酸橡膠；環己酮、甲基乙基酮等溶劑；及視需要的剝離性賦予劑等其他成分加以混合來製作清漆。將所製作的清漆塗佈於支撐膜的單面後，藉由加熱處理而自塗膜去除溶劑，從而於支撐膜上形成接著層。藉此，可獲得兩層結構的暫時保護膜。
作為將清漆塗佈於支撐膜的單面的方法，並無特別限制，例如可使用輥塗佈、逆輥塗佈、凹版塗佈、棒塗佈、缺角輪塗佈、模塗佈、減壓模塗佈。
＜半導體裝置的製造方法＞ 可藉由包括使用一實施形態的暫時保護膜的半導體元件的密封成形步驟的方法來製造半導體裝置。所製造的半導體裝置例如可為如下無引線型封裝（Non Lead Type Package），所述無引線型封裝具有引線框架及搭載於其的半導體元件以及在引線框架的半導體元件側將半導體元件密封的密封層，並且引線框架的背面露出，以便用以外部連接。作為其具體例，可列舉方形扁平無引線封裝（Quad Flat Non-leaded Package，QFN）、小外形無引線封裝（Small Outline Non-leaded Package，SON）。
圖3是表示一實施形態的半導體裝置的製造方法的剖面圖。圖4是表示藉由圖3的製造方法而獲得的半導體裝置的一實施形態的剖面圖。以下，視需要，參照各圖式來說明各步驟。
圖3的實施形態的半導體裝置的製造方法依序包括：將暫時保護膜10於其接著層與引線框架相接的方向上貼附於引線框架11的單面（背面）的步驟，所述引線框架11具有模墊11a及內引線11b；將半導體元件14搭載（接著）於模墊11a的與暫時保護膜10相反的一側的面上的步驟；設置金屬線12的步驟，所述金屬線12將半導體元件14與內引線11b連接；形成將半導體元件14及金屬線12密封的密封層13，從而獲得具有引線框架11、半導體元件14及密封層13的密封成形體20的步驟；以及自密封成形體20剝離暫時保護膜10的步驟。
暫時保護膜10對於引線框架11的貼附可在常溫（例如，5℃～35℃）下進行。貼附的方法並無特別限制，例如可為輥層壓法。
一實施形態的帶暫時保護膜的引線框架包括：引線框架11，具有模墊11a及內引線11b；以及暫時保護膜10；並且暫時保護膜10以其接著層2與引線框架11的單面相接的方式貼附於引線框架11。
引線框架11的材質並無特別限制，例如可為42合金等鐵系合金、銅或銅系合金。於使用銅及銅系合金的引線框架的情況下，亦可對引線框架的表面實施鈀、金、銀等被覆處理。為了提高與密封材的密接力，亦可對引線框架表面進行物理性粗化處理。亦可對引線框架表面實施防止銀糊劑的滲出的環氧滲出（Epoxy Bleed Out，EBO）防止處理等化學性處理。
半導體元件14通常介隔接著劑（例如，銀糊劑）而搭載（接著）於模墊11a。亦可藉由加熱處理（例如，140℃～200℃，30分鐘～2小時）而使接著劑硬化。
金屬線12並無特別限制，例如可為金線、銅線或鈀被覆銅線。例如，亦可在200℃～270℃下進行3分鐘～60分鐘加熱，並利用超音波與按壓壓力而將半導體元件及內引線與金屬線12接合。
在利用金屬線12的打線接合之後且獲得密封成形體20（形成密封層13）的密封成形的步驟之前，亦可對引線框架11實施電漿處理。藉由電漿處理而可進一步提高密封層與引線框架的密接性，且進一步提高半導體裝置的可靠性。作為電漿處理，例如可列舉在減壓條件（例如，9.33 Pa以下）下，以規定的氣體流量注入氬氣、氮氣、氧氣等氣體來進行電漿照射的方法。電漿處理中的電漿的照射輸出例如可為10 W～500 W。另外，電漿處理的時間例如可為5秒～50秒。電漿處理中的氣體流量可為5 sccm～50 sccm。
密封成形的步驟中，使用密封材來形成密封層13。藉由密封成形，可獲得具有多個半導體元件14及一次性將該些半導體元件密封的密封層13的密封成形體20。在密封成形期間，由於設置有暫時保護膜10，因此可抑制密封材繞入至引線框架11的背面側。
一實施形態的帶暫時保護膜的密封成形體包括：引線框架11，具有模墊11a及內引線11b；半導體元件14，搭載於模墊11a；金屬線12，將半導體元件14與內引線11b連接；密封層13，將半導體元件14及金屬線12密封；以及暫時保護膜10；並且暫時保護膜10的接著層2貼附於引線框架11的與搭載有半導體元件14的面相反的一側的面。
形成密封層期間的溫度（密封溫度）可為140℃～200℃，亦可為160℃～180℃。形成密封層期間的壓力（密封壓力）可為6 MPa～15 MPa，亦可為7 MPa～10 MPa。密封成形中的加熱時間（密封時間）可為1分鐘～5分鐘，亦可為2分鐘～3分鐘。
視需要亦可使所形成的密封層13加熱硬化。用以使密封層硬化的加熱溫度（密封硬化溫度）可為150℃～200℃，亦可為160℃～180℃。用以使密封層硬化的加熱時間（密封硬化時間）可為4小時～7小時，亦可為5小時～6小時。
密封材的材質並無特別限制，例如可列舉：甲酚酚醛清漆環氧樹脂、苯酚酚醛清漆環氧樹脂、聯苯二環氧樹脂、萘酚酚醛清漆環氧樹脂等環氧樹脂。在密封材中，例如亦可添加填料、溴化合物等阻燃性物質，蠟成分等添加材。
在形成密封層13（密封成形）後，自所獲得的密封成形體20的引線框架11及密封層13剝離暫時保護膜10。於使密封層硬化的情況下，亦可於使密封層硬化之前或之後的任意時刻點剝離暫時保護膜10。
剝離暫時保護膜時的溫度並無特別限制，可為常溫（例如，5℃～35℃）。該溫度亦可為接著層的玻璃轉移溫度以上。該情況下，暫時保護膜相對於引線框架及密封材的剝離性更進一步良好。若接著層中的丙烯酸橡膠的Tg例如為5℃以下或0℃以下，則接著層的Tg成為與常溫同等以下，從而容易獲得常溫下的良好的剝離性。
半導體裝置的製造方法視需要亦可進而包括如下步驟：在剝離步驟後，將殘留於引線框架11及密封層13上的接著層（糊殘留）去除。該情況下，例如可使用溶劑而將所殘留的接著層去除。作為溶劑，例如可使用二甲基亞碸、乙二醇、水。溶劑可單獨使用一種，亦可混合使用兩種以上。亦可於溶劑中添加界面活性劑。於溶劑含有水的情況下，溶劑亦可為調整為鹼性的溶液（鹼性溶液）。鹼性溶液的pH值可為10以上或12以上。進行利用溶劑的去除，並且視需要亦可進行機械性刷洗（brushing）。另外，亦可將密封層的毛刺及氧化膜去除。
於引線框架包含具有模墊及內引線的多個圖案的情況下，視需要，可將密封成形體20分割而獲得多個分別具有一個半導體元件的圖4的半導體裝置100。
即，於引線框架11具有多個模墊11a且在多個模墊11a上分別搭載半導體元件14的情況下，一實施形態的製造方法亦可進而包括如下步驟：在將暫時保護膜10自密封成形體20剝離之前或之後，將密封成形體20分割而獲得具有一個模墊11a及半導體元件14的半導體裝置100。
使用一實施形態的暫時保護膜而製造的半導體裝置於高密度化、小面積化、薄型化等方面優異，例如可較佳地用於行動電話、智慧型手機、電腦、平板等電子機器中。 [實施例]
以下，藉由實施例更具體地說明本發明，但本發明並不限定於以下實施例。
＜實施例1～實施例15及比較例1～比較例4的暫時保護膜的製造＞ （塗敷用清漆的製作） 於具有表1或表2所示的組成（單位：質量份）的樹脂組成物中，添加作為溶劑的環己酮並加以攪拌混合，從而獲得不揮發成分12質量%的清漆A～清漆O。表中所示的丙烯酸橡膠及剝離性賦予劑的詳細情況如下所述。 丙烯酸橡膠 ×丙烯酸橡膠Ai（長瀨化成（Nagase ChemteX）股份有限公司製造，商品名：WS-023 EK30，重量平均分子量：50萬） ×丙烯酸橡膠Aii（長瀨化成（Nagase ChemteX）股份有限公司製造，商品名：HTR-280 DR，重量平均分子量：90萬） ×剝離性賦予劑Bi（長瀨化成（Nagase ChemteX）股份有限公司製造，商品名：EX-614B，山梨糖醇聚縮水甘油醚，環氧當量：174） ×剝離性賦予劑Bii（長瀨化成（Nagase ChemteX）股份有限公司製造，商品名：EX-810，乙二醇二縮水甘油醚，環氧當量：113）
[表1]
[表2]
（暫時保護膜的製作） 實施例1～實施例13 將所獲得的清漆A～清漆M分別塗佈於支撐膜（聚醯亞胺膜，宇部興產股份有限公司製造，商品名：UPILEX25SGA，膜厚：25 μm）上。藉由將塗膜在90℃下加熱2分鐘及在150℃下加熱2分鐘而加以乾燥，於支撐膜上形成厚度2 μm的接著層，從而獲得實施例1～實施例13的暫時保護膜。針對實施例1～實施例13的各暫時保護膜，利用下述方法來測定200℃下的固體剪切彈性模數。將結果示於表3中。
固體剪切彈性模數的測定方法 將暫時保護膜切成5 mm×8 mm尺寸，並將所獲得的試驗片放置於固體剪切測定夾具上，使用動態黏彈性測定裝置（UBM股份有限公司製造，Rheogel-E4000），在正弦波、30℃～250℃、升溫速度5℃/min、頻率400 Hz的條件下測定固體剪切彈性模數。再者，輸入厚度固定為0.1 mm，並設為應變控制1.95 μm、1.95%。根據測定結果，讀取200℃下的固體剪切彈性模數。
實施例14 將接著層的厚度設為1 μm，除此以外，與實施例1同樣地獲得實施例14的暫時保護膜。暫時保護膜在200℃下的固體剪切彈性模數為8.2 MPa。
實施例15 將接著層的厚度設為5 μm，除此以外，與實施例1同樣地獲得實施例15的暫時保護膜。暫時保護膜在200℃下的固體剪切彈性模數為5.7 MPa。
比較例1 將接著層的厚度設為6 μm，除此以外，與實施例1同樣地獲得比較例1的暫時保護膜。暫時保護膜在200℃下的固體剪切彈性模數為4.0 MPa。
比較例2 將接著層的厚度設為8 μm，除此以外，與實施例1同樣地獲得比較例2的暫時保護膜。暫時保護膜在200℃下的固體剪切彈性模數為3.1 MPa。
比較例3 將接著層的厚度設為10 μm，除此以外，與實施例1同樣地獲得比較例3的暫時保護膜。暫時保護膜在200℃下的固體剪切彈性模數為1.8 MPa。
比較例4 將清漆O塗佈於支撐膜（東麗杜邦（Toray Dupont）股份有限公司製造，商品名：卡普頓（Kapton）100EN，膜厚：25 μm）上。藉由將塗膜在90℃下加熱2分鐘及在150℃下加熱2分鐘而加以乾燥，於支撐膜上形成厚度5 μm的接著層，從而獲得比較例4的暫時保護膜。暫時保護膜在200℃下的固體剪切彈性模數為3.2 MPa。
＜比較例5的暫時保護膜的製造＞ （塗敷用清漆的製作） 於安裝有溫度計、攪拌機、氮氣導入管及分餾塔的5升的四口燒瓶中，在氮氣環境下，加入270.9 g（0.66莫耳）的2,2-雙[4-(4-胺基苯氧基)苯基]丙烷、8.7 g（0.035莫耳）的1,3-雙(3-胺基丙基)-四甲基二矽氧烷，並將該些溶解於1950 g的N-甲基-2-吡咯啶酮中。進而，將該溶液冷卻至0℃，並在該溫度下添加149.5 g（0.71莫耳）的偏苯三甲酸酐氯化物。偏苯三甲酸酐氯化物溶解後，添加100 g的三乙胺。在室溫下持續攪拌2小時後，升溫至180℃並反應5小時，藉此完成醯亞胺化。將反應液投入至甲醇中而分離聚合物。將其乾燥後，溶解於N-甲基-2-吡咯啶酮並投入至甲醇中，再次分離聚合物。將所分離的聚合物減壓乾燥，從而獲得經精製的粉末狀的聚醚醯胺醯亞胺。將120 g的該聚醚醯胺醯亞胺與3.6 g的矽烷偶合劑（東麗道康寧（Toray Dow-corning）股份有限公司製造，商品名：SH6040）溶解於360 g的N-甲基-2-吡咯啶酮中，從而獲得接著層形成用的清漆P。
於安裝有溫度計、攪拌機、氮氣導入管及分餾塔的5升的四口燒瓶中，在氮氣環境下，加入172.4 g（0.42莫耳）的2,2-雙[4-(4-胺基苯氧基)苯基]丙烷、153.7 g（0.42莫耳）的4,4'-亞甲基雙(2,6-二異丙基苯胺)，並將該些溶解於1550 g的N-甲基-2-吡咯啶酮中。進而，將該溶液冷卻至0℃，並在該溫度下添加174.7 g（0.83莫耳）的偏苯三甲酸酐氯化物。偏苯三甲酸酐氯化物溶解後，添加130 g的三乙胺。在室溫下持續攪拌2小時後，升溫至180℃並反應5小時，藉此完成醯亞胺化。將反應液投入至甲醇中而分離聚合物。將其乾燥後，溶解於N-甲基-2-吡咯啶酮並投入至甲醇中，再次分離聚合物。將所分離的聚合物減壓乾燥，從而獲得經精製的粉末狀的聚醚醯胺醯亞胺。將120 g的該聚醚醯胺醯亞胺與6 g的矽烷偶合劑（東麗道康寧（Toray Dow-corning）股份有限公司製造，商品名：SH6040）溶解於360 g的N-甲基-2-吡咯啶酮中，從而獲得非接著層形成用的清漆Q。
（暫時保護膜的製作） 將清漆P塗佈於支撐膜（聚醯亞胺膜，宇部興產股份有限公司製造，商品名：UPILEX25SGA，膜厚：25 μm）上，藉由在100℃下加熱10分鐘及在300℃下加熱10分鐘而加以乾燥，從而形成膜厚為8 μm的接著層。繼而，將清漆Q塗佈於塗佈有接著劑清漆的支撐膜的背面，藉由在100℃下加熱10分鐘及在300℃下加熱10分鐘而加以乾燥，從而形成膜厚為6 μm的非接著層。藉此，獲得具有接著層及非接著層的比較例5的暫時保護膜。暫時保護膜的固體剪切彈性模數為21.0 MPa。
＜評價＞ （接著層的接著力） （1）常溫貼附後（常溫下的貼附性） 作為引線框架，準備CDA194框架（Cu，新光電氣工業股份有限公司製造）及CDA194鍍鈀框架（PPF，新光電氣工業股份有限公司製造）。使用手動輥，將實施例及比較例的各暫時保護膜於接著層（40 mm×160 mm尺寸）與引線框架相接的方向上在常溫（24℃）、負重20 N的條件下貼附於該些引線框架（50 mm×157 mm尺寸）。然後，利用測力計（force gauge），在180°方向上以50 mm/min的速度剝離各暫時保護膜，記錄此時的負重的最大值作為接著力。藉此，評價各暫時保護膜在常溫下的貼附性（感壓接著性）。 但是，於比較例5的暫時保護膜的情況下，接著層在常溫下的貼附性弱，因此使用加熱至230℃的壓製機，將施加至膠帶的壓力設為6 MPa並加壓10秒，藉此將接著層貼附於引線框架（以下的接著力測定亦同樣）。
（2）加熱處理後（加熱處理後的剝離性評價） 作為引線框架，準備CDA194框架（Cu，新光電氣工業股份有限公司製造）及CDA194鍍鈀框架（PPF，新光電氣工業股份有限公司製造）。使用手動輥，將實施例及比較例的各暫時保護膜於接著層（40 mm×160 mm尺寸）與引線框架相接的方向上在常溫（24℃）、負重20 N的條件下貼附於該些引線框架（50 mm×157 mm尺寸）。然後，在空氣環境下且烘箱內，以180℃、60分鐘，200℃、60分鐘，175℃、2分鐘的順序變更條件，同時對引線框架及暫時保護膜進行加熱。然後，利用測力計，在180°方向上以50 mm/min的速度剝離各暫時保護膜，記錄此時的負重的最大值作為接著力。藉此，評價各暫時保護膜自相當於密封成形的條件下的加熱處理後的引線框架的剝離性。
（3）密封成形後（密封成形後的剝離性評價） 作為引線框架，準備CDA194框架（Cu，新光電氣工業股份有限公司製造）。使用手動輥，將實施例及比較例的各暫時保護膜於接著層（40 mm×160 mm尺寸）與引線框架相接的方向上在常溫（24℃）、負重20 N的條件下貼附於所述引線框架（50 mm×157 mm尺寸）。然後，在空氣環境下且烘箱內，以180℃、60分鐘，200℃、60分鐘的順序變更條件，同時對引線框架及暫時保護膜進行加熱。 繼而，於引線框架的與暫時保護膜相反的一側的面上，在氬氣環境下（流量：20 sccm）、150 W、15秒的條件下進行電漿處理。然後，使用鑄模成形機（愛匹克山田（APIC YAMADA）股份有限公司製造），在175℃、6.8 MPa、2分鐘的條件下進行密封成形，於引線框架的與暫時保護膜相反的一側的面上，藉由密封材（商品名：GE-7470L-A，日立化成股份有限公司製造）來形成密封層。 然後，利用測力計，在180°方向上以50 mm/min的速度剝離各暫時保護膜，記錄接著層自密封層剝離時的負重的最大值作為密封成形後的相對於密封層的接著力。藉此，評價各暫時保護膜自密封成形後的密封層的剝離性。
（4）密封層硬化後（密封層硬化後的剝離性評價） 作為引線框架，準備CDA194框架（Cu，新光電氣工業股份有限公司製造）及CDA194鍍鈀框架（PPF，新光電氣工業股份有限公司製造）。使用手動輥，將實施例及比較例的各暫時保護膜於接著層（40 mm×160 mm尺寸）與引線框架相接的方向上在常溫（24℃）、負重20 N的條件下貼附於該些引線框架（50 mm×157 mm尺寸）。然後，在空氣環境下且烘箱內，以180℃、60分鐘，200℃、60分鐘的順序變更條件，同時對引線框架及暫時保護膜進行加熱。於引線框架的與暫時保護膜相反的一側的面上，在氬氣環境下（流量：20 sccm）、150 W、15秒的條件下進行電漿處理。繼而，使用鑄模成形機（愛匹克山田（APIC YAMADA）股份有限公司製造），在175℃、6.8 MPa、2分鐘的條件下進行密封成形，於引線框架的與暫時保護膜相反的一側的面上，藉由密封材（商品名：GE-7470L-A，日立化成股份有限公司製造）來形成密封層。進而，於烘箱中且空氣環境下、在180℃下加熱5小時，藉此使密封層硬化。加熱後，利用測力計，在180°方向上以50 mm/min的速度剝離各暫時保護膜，分別記錄接著層自引線框架或密封層剝離時的負重的最大值作為密封成形後的相對於引線框架或密封層的接著力。藉此，評價各暫時保護膜在密封層硬化後的剝離性。
（5）糊殘留 將實施例及比較例的暫時保護膜於接著層與引線框架相接的方向上在常溫（24℃）、負重20 N的條件下貼附於CDA194框架（引線框架，新光電氣工業股份有限公司製造）。在空氣環境下且烘箱內，以180℃、60分鐘，200℃、60分鐘的順序變更條件，同時對引線框架及暫時保護膜進行加熱。於引線框架的與暫時保護膜相反的一側的面上，在氬氣環境下（流量：20 sccm）、150 W、15秒的條件下進行電漿處理。 使用鑄模成形機（愛匹克山田（APIC YAMADA）股份有限公司製造），在175℃、6.8 MPa、2分鐘的條件下進行密封成形，於引線框架的與暫時保護膜相反的一側的面上，藉由密封材（商品名：GE-7470L-A，日立化成股份有限公司製造）來形成密封層。 然後，在180°方向上以50 mm/min的速度剝離各暫時保護膜，並確認剝離後的密封層及引線框架上的糊殘留的狀態。基於有糊殘留的部分相對於將密封層及引線框架的表面合計而成的整體的面積的面積比例，按以下的基準而以6階段評價糊殘留。 5：60%～100%（所殘留的接著層整體而言相對較厚） 4：60%～100%（所殘留的接著層整體而言相對較薄） 3：30%以上且未滿60% 2：10%以上且未滿30% 1：超過0%且未滿10% 0：0%
（6）5%重量減少溫度 使用示差熱天秤（精工儀器（Seiko Instruments）股份有限公司製造，SSC5200型），在空氣環境下、升溫速度10℃/min的條件下，對實施例及比較例的各暫時保護膜的5%重量減少溫度進行測定。
將以上的評價結果示於表3及表4中。各實施例的暫時保護膜可在常溫下貼附於引線框架，且在密封成形後，實現了一邊抑制糊殘留一邊容易自引線框架及密封層剝離。
[表3]
[表4]
1‧‧‧支撐膜
2‧‧‧接著層
3‧‧‧非接著層
10、10’‧‧‧暫時保護膜
11‧‧‧引線框架
11a‧‧‧模墊
11b‧‧‧內引線
12‧‧‧金屬線
13‧‧‧密封層
14‧‧‧半導體元件
20‧‧‧密封成形體
100‧‧‧半導體裝置
圖1是表示暫時保護膜的一實施形態的剖面圖。 圖2是表示暫時保護膜的一實施形態的剖面圖。 圖3是對半導體裝置的製造方法的一實施形態進行說明的剖面圖。 圖4是表示半導體裝置的一實施形態的剖面圖。

Claims (14)

  1. 一種半導體密封成形用暫時保護膜，其包括：支撐膜；以及接著層，設置於所述支撐膜上，含有丙烯酸橡膠；並且所述半導體密封成形用暫時保護膜中， 所述半導體密封成形用暫時保護膜在200℃下的固體剪切彈性模數為5.0 MPa以上。
  2. 如申請專利範圍第1項所述的半導體密封成形用暫時保護膜，其中，所述接著層進而含有剝離性賦予劑。
  3. 如申請專利範圍第2項所述的半導體密封成形用暫時保護膜，其中，相對於所述丙烯酸橡膠100質量份，所述剝離性賦予劑的含量為6質量份以上且未滿60質量份。
  4. 如申請專利範圍第1項至第3項中任一項所述的半導體密封成形用暫時保護膜，其中，所述接著層的厚度為1 μm以上且5 μm以下。
  5. 如申請專利範圍第1項至第4項中任一項所述的半導體密封成形用暫時保護膜，其中，所述支撐膜為聚醯亞胺膜。
  6. 如申請專利範圍第1項至第5項中任一項所述的半導體密封成形用暫時保護膜，其中，所述丙烯酸橡膠為包含選自由(甲基)丙烯酸丁酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸甲酯、(甲基)丙烯酸、丙烯腈、(甲基)丙烯酸-2-羥基乙酯及(甲基)丙烯酸縮水甘油酯所組成的群組中的至少一種的單體單元的共聚物。
  7. 如申請專利範圍第1項至第6項中任一項所述的半導體密封成形用暫時保護膜，其中，所述丙烯酸橡膠的重量平均分子量為450000以上且900000以下。
  8. 如申請專利範圍第1項至第7項中任一項所述的半導體密封成形用暫時保護膜，其中，所述接著層在24℃下具有感壓接著性。
  9. 如申請專利範圍第1項至第8項中任一項所述的半導體密封成形用暫時保護膜，其中，所述半導體密封成形用暫時保護膜的5%重量減少溫度為350℃以上。
  10. 如申請專利範圍第1項至第9項中任一項所述的半導體密封成形用暫時保護膜，其進而包括覆蓋膜，所述覆蓋膜設置於所述接著層的與設置有所述支撐膜的面相反的一側的面上。
  11. 一種帶暫時保護膜的引線框架，其包括： 引線框架，具有模墊及內引線；以及 如申請專利範圍第1項至第10項中任一項所述的半導體密封成形用暫時保護膜，並且 所述半導體密封成形用暫時保護膜以其接著層與所述引線框架的單面相接的方式貼附於所述引線框架。
  12. 一種帶暫時保護膜的密封成形體，其包括： 引線框架，具有模墊及內引線； 半導體元件，搭載於所述模墊； 金屬線，將所述半導體元件與所述內引線連接； 密封層，將所述半導體元件及所述金屬線密封；以及 如申請專利範圍第1項至第10項中任一項所述的半導體密封成形用暫時保護膜，並且 所述半導體密封成形用暫時保護膜的接著層貼附於所述引線框架的與搭載有所述半導體元件的面相反的一側的面。
  13. 一種製造半導體裝置的方法，其依序包括： 將如申請專利範圍第1項至第10項中任一項所述的半導體密封成形用暫時保護膜於其接著層與引線框架相接的方向上貼附於所述引線框架的單面的步驟，所述引線框架具有模墊及內引線； 將半導體元件搭載於所述模墊的與所述半導體密封成形用暫時保護膜相反的一側的面上的步驟； 設置金屬線的步驟，所述金屬線將所述半導體元件與所述內引線連接； 形成將所述半導體元件及所述金屬線密封的密封層，從而獲得具有所述引線框架、所述半導體元件及所述密封層的密封成形體的步驟；以及 自所述密封成形體剝離所述半導體密封成形用暫時保護膜的步驟。
  14. 如申請專利範圍第13項所述的製造半導體裝置的方法，其中，所述引線框架具有多個所述模墊，在多個所述模墊上分別搭載有所述半導體元件， 所述製造半導體裝置的方法進而包括如下步驟：在將所述半導體密封成形用暫時保護膜自所述密封成形體剝離之前或之後，將所述密封成形體分割而獲得具有一個所述模墊及所述半導體元件的半導體裝置。
TW107103074A 2017-05-10 2018-01-29 半導體密封成形用暫時保護膜 TWI793101B (zh)

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