JP7143845B2 - 半導体封止成形用仮保護フィルム - Google Patents
半導体封止成形用仮保護フィルム Download PDFInfo
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- JP7143845B2 JP7143845B2 JP2019516890A JP2019516890A JP7143845B2 JP 7143845 B2 JP7143845 B2 JP 7143845B2 JP 2019516890 A JP2019516890 A JP 2019516890A JP 2019516890 A JP2019516890 A JP 2019516890A JP 7143845 B2 JP7143845 B2 JP 7143845B2
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Description
また、特許文献1の半導体用接着フィルムは、封止後の剥離のために加熱処理を行うことが好ましい。一方、常温での貼り付け性が比較的良好なフィルムの場合、封止後のリードフレーム及び封止材からの剥離の際、リードフレーム側に糊残りが発生する場合がある等、封止成形後の剥離性の点で改善の余地があった。
図1は、一実施形態に係る仮保護フィルムを示す断面図である。図1に示す仮保護フィルム10は、支持フィルム1と、支持フィルム1の片面上に設けられた接着層2と、から構成される。支持フィルム1の両面上に接着層が形成されていてもよい。図2も、一実施形態に係る仮保護フィルムを示す断面図である。図2の仮保護フィルム10’は、支持フィルム1と、支持フィルム1の一方の主面上に設けられた接着層2と、支持フィルム1の他方の主面上に設けられた、実質的に接着性を有しない樹脂層(非接着層3)とを有する。これらの仮保護フィルムは、リードフレームに搭載された半導体素子を封止する封止層を形成する封止成形の工程において、リードフレームの裏面(半導体素子が搭載される面とは反対側の面)に貼り付けることで、リードフレームを封止成形の間、仮保護するための半導体封止成形用仮保護フィルムとして用いることができる。
接着層は、アクリルゴムを含有する。アクリルゴムは、一般に、(メタ)アクリル酸エステルを単量体単位として含む共重合体である。アクリルゴムは、例えば、(メタ)アクリル酸エステルと、(メタ)アクリル酸、芳香族ビニル化合物、シアン化ビニル化合物等の他の単量体とを含む単量体混合物の重合反応により得られる共重合体である。
支持フィルムは、特に制限されないが、耐熱性樹脂フィルムであってもよい。支持フィルムとして耐熱性樹脂フィルムを用いる場合、高温条件(例えば、200℃以上)であっても、支持フィルムが軟化せず、作業性がより一層優れたものとなる。具体的には、支持フィルムのガラス転移温度(Tg)が、耐熱性向上の観点から、200℃以上、又は250℃以上であってもよい。
上記半導体封止成形用仮保護フィルムは、上記接着層の上記支持フィルムが設けられた面とは反対側の面上に設けられたカバーフィルムを備えていてよい。つまり、上記半導体封止成形用仮保護フィルムは、カバーフィルム付き半導体封止成形用仮保護フィルムの形態であってもよい。上記カバーフィルムは、特に制限はないが、ポリエチレンテレタレートフィルムであってもよく、剥離層を設けたポリエチレンテレフタレートフィルムであってもよい。
一実施形態に係る仮保護フィルムは、例えば、以下の方法により製造することができる。まず、アクリルゴムと、シクロヘキサノン、メチルエチルケトン等の溶剤と、必要に応じて剥離性付与剤等の他の成分と、を混合し、ワニスを作製する。作製したワニスを支持フィルムの片面に塗布した後、加熱処理により塗膜から溶剤を除去して、支持フィルム上に接着層を形成する。これにより、二層構造の仮保護フィルムを得ることができる。
一実施形態に係る仮保護フィルムを用いた半導体素子の封止成形工程を含む方法によって、半導体装置を製造することができる。製造される半導体装置は、例えば、リードフレーム及びこれに搭載された半導体素子と、リードフレームの半導体素子側で半導体素子を封止する封止層とを有し、リードフレームの裏面が外部接続用に露出している、Non Lead Type Packageであってもよい。その具体例としては、QFN(QuadFlat Non-leaded Package)、SON(Small Outline Non-leaded Package)が挙げられる。
(塗工用ワニスの作製)
表1又は表2に示す組成(単位:質量部)を有する樹脂組成物に、溶剤としてシクロヘキサノンを加えて攪拌混合し、不揮発分12質量%のワニスA~Oを得た。表に示すアクリルゴム及び剥離性付与剤の詳細は以下のとおりである。
アクリルゴム
・アクリルゴムAi(ナガセケムテックス株式会社製、商品名:WS-023 EK30、重量平均分子量:50万)
・アクリルゴムAii(ナガセケムテックス株式会社製、商品名:HTR-280 DR、重量平均分子量:90万)
・剥離性付与剤Bi(ナガセケムテックス株式会社製、商品名:EX-614B、ソルビトールポリグリシジルエーテル、エポキシ当量:174)
・剥離性付与剤Bii(ナガセケムテックス株式会社製、商品名:EX-810、エチレングリコールジグリシジルエーテル、エポキシ当量:113)
実施例1~13
得られたワニスA~Mをそれぞれ支持フィルム(ポリイミドフィルム、宇部興産株式会社製、商品名:UPILEX25SGA、膜厚:25μm)上に塗布した。塗膜を90℃で2分間、及び150℃で2分間加熱することによって乾燥し、支持フィルム上に厚さ2μmの接着層を形成し、実施例1~13の仮保護フィルムを得た。実施例1~13の各仮保護フィルムにおいて、200℃における固体せん断弾性率を下記の方法で測定した。結果を表3に示した。
仮保護フィルムを5mm×8mmサイズに切って得た試験片を固体せん断測定ジグにセットし、動的粘弾性測定装置(株式会社ユービーエム製、Rheogel-E4000)を用いて、正弦波、30~250℃、昇温速度5℃/min、周波数400Hzの条件で固体せん断弾性率を測定した。なお、入力厚みは0.1mmで固定し、歪み制御1.95μm、1.95%とした。測定結果から、200℃における固体せん断弾性率を読み取った。
接着層の厚さを1μmとすること以外は実施例1と同様にして、実施例14の仮保護フィルムを得た。仮保護フィルムの200℃における固体せん断弾性率は8.2MPaであった。
接着層の厚さを5μmとすること以外は実施例1と同様にして、実施例15の仮保護フィルムを得た。仮保護フィルムの200℃における固体せん断弾性率は5.7MPaであった。
接着層の厚さを6μmとすること以外は実施例1と同様にして、比較例1の仮保護フィルムを得た。仮保護フィルムの200℃における固体せん断弾性率は4.0MPaであった。
接着層の厚さを8μmとすること以外は実施例1と同様にして、比較例2の仮保護フィルムを得た。仮保護フィルムの200℃における固体せん断弾性率は3.1MPaであった。
接着層の厚さを10μmとすること以外は実施例1と同様にして、比較例3の仮保護フィルムを得た。仮保護フィルムの200℃における固体せん断弾性率は1.8MPaであった。
ワニスOを支持フィルム(東レ・デュポン株式会社製、商品名:カプトン100EN、膜厚:25μm)上に塗布した。塗膜を90℃で2分間、及び150℃で2分間加熱することによって乾燥し、支持フィルム上に厚さ5μmの接着層を形成し、比較例4の仮保護フィルムを得た。仮保護フィルムの200℃における固体せん断弾性率は3.2MPaであった。
(塗工用ワニスの作製)
温度計、撹拌機、窒素導入管及び分留塔をとりつけた5リットルの4つ口フラスコに窒素雰囲気下、2,2-ビス[4-(4-アミノフェノキシ)フェニル]プロパン270.9g(0.66モル)、1,3-ビス(3-アミノプロピル)-テトラメチルジシロキサン8.7g(0.035 モル)を入れ、これらをN-メチル-2-ピロリドン1950gに溶解した。さらにこの溶液を0℃に冷却し、この温度で無水トリメリット酸クロライド149.5g(0.71モル)を添加した。無水トリメリット酸クロライドが溶解した後、トリエチルアミン100gを添加した。室温で2時間撹拌を続けた後、180℃に昇温して5時間の反応によりイミド化を完結させた。反応液をメタノール中に投入して重合体を単離した。これを乾燥した後、N-メチル-2-ピロリドンに溶解しメタノール中に投入して再度重合体を単離した。単離した重合体を減圧乾燥して精製された粉末状のポリエーテルアミドイミドを得た。このポリエーテルアミドイミド120gとシランカップリング剤(東レ・ダウコーニング株式会社製、商品名:SH6040)3.6gをN-メチル-2-ピロリドン360gに溶解し、接着層形成用のワニスPを得た。
ワニスPを支持フィルム(ポリイミドフィルム、宇部興産株式会社製、商品名:UPILEX25SGA、膜厚:25μm)上に塗布し、100℃、10分間及び300℃、10分間の加熱により乾燥して、膜厚が8μmの接着層を形成した。次に接着剤ワニスを塗布した支持フィルムの裏面にワニスQを塗布し、100℃、10分間及び300℃、10分間の加熱により乾燥して、膜厚が6μmの非接着層を形成した。これにより、接着層及び非接着層を有する比較例5の仮保護フィルムを得た。仮保護フィルムの固体せん断弾性率は21.0MPaであった。
(接着層の接着力)
(1)常温貼り付け後(常温での貼り付け性)
リードフレームとして、CDA194フレーム(Cu、新光電気工業株式会社製)、及びCDA194パラジウムメッキフレーム(PPF、新光電気工業株式会社製)を準備した。これらリードフレーム(50mm×157mmサイズ)に、ハンドローラーを用いて、実施例及び比較例の各仮保護フィルムを、接着層(40mm×160mmサイズ)がリードフレームに接する向きで、常温(24℃)、荷重20Nの条件で貼り付けた。その後、フォースゲージにて180°方向に50mm/分の速度で各仮保護フィルムを引き剥がし、そのときの荷重の最大値を接着力として記録した。これにより、各仮保護フィルムの常温での貼り付け性(感圧接着性)を評価した。
ただし、比較例5の仮保護フィルムの場合、接着層の常温での貼り付け性が弱かったため、230℃に加熱されたプレス機を用いて、テープにかかる圧力を6MPaとし、10秒間加圧することで接着層をリードフレームに貼り付けた(以下の接着力測定でも同様)。
リードフレームとして、CDA194フレーム(Cu、新光電気工業株式会社製)、及びCDA194パラジウムメッキフレーム(PPF、新光電気工業株式会社製)を準備した。これらリードフレーム(50mm×157mmサイズ)に、ハンドローラーを用いて、実施例及び比較例の各仮保護フィルムを、接着層(40mm×160mmサイズ)がリードフレームに接する向きで、常温(24℃)、荷重20Nの条件で貼り付けた。その後、リードフレーム及び仮保護フィルムを、空気雰囲気下、オーブン内で、180℃で60分間、200℃で60分間、175℃で2分間の順で条件を変更しながら加熱した。その後、フォースゲージにて180°方向に50mm/分の速度で各仮保護フィルムを引き剥がし、そのときの荷重の最大値を接着力として記録した。これにより、各仮保護フィルムの、封止成形に相当する条件における加熱処理後のリードフレームからの剥離性を評価した。
リードフレームとして、CDA194フレーム(Cu、新光電気工業株式会社製)を準備した。上記リードフレーム(50mm×157mmサイズ)に、ハンドローラーを用いて、実施例及び比較例の各仮保護フィルムを、接着層(40mm×160mmサイズ)がリードフレームに接する向きで、常温(24℃)、荷重20Nの条件で貼り付けた。その後、リードフレーム及び仮保護フィルムを、空気雰囲気下、オーブン内で、180℃で60分間、200℃で60分間の順で条件を変えながら加熱した。
次いで、リードフレームの仮保護フィルムとは反対側の面上にプラズマ処理をアルゴンガス雰囲気下(流量:20sccm)、150W、15秒の条件で行った。その後、モールド成形機(アピックヤマダ株式会社製)を用いて175℃、6.8MPa、2分間の条件で封止成形を行い、リードフレームの仮保護フィルムとは反対側の面上に封止材(商品名:GE-7470L-A、日立化成株式会社製)により封止層を形成した。
その後フォースゲージにて180°方向に50mm/分の速度で各仮保護フィルムを引き剥がし、接着層が封止層から引き剥がされるときの荷重の最大値を、封止成形後の封止層に対する接着力として記録した。これにより、各仮保護フィルムの封止成形後の封止層からの剥離性を評価した。
リードフレームとして、CDA194フレーム(Cu、新光電気工業株式会社製)、及びCDA194パラジウムメッキフレーム(PPF、新光電気工業株式会社製)を準備した。これらリードフレーム(50mm×157mmサイズ)に、ハンドローラーを用いて、実施例及び比較例の各仮保護フィルムを、接着層(40mm×160mmサイズ)がリードフレームに接する向きで、常温(24℃)、荷重20Nの条件で貼り付けた。その後、リードフレーム及び仮保護フィルムを空気雰囲気下、オーブン内で、180℃で60分間、200℃で60分間の順で条件を変えながら加熱した。リードフレームの仮保護フィルムとは反対側の面上に、プラズマ処理をアルゴンガス雰囲気下(流量:20sccm)、150W、15秒の条件で行った。次いで、モールド成形機(アピックヤマダ株式会社製)を用いて、175℃、6.8MPa、2分間の条件で封止成形を行い、リードフレームの仮保護フィルムとは反対側の面上に封止材(商品名:GE-7470L-A、日立化成株式会社製)により封止層を形成した。さらに、オーブン中、空気雰囲気下で180℃、5時間の加熱により、封止層を硬化させた。加熱後、フォースゲージにて180°方向に50mm/分の速度で各仮保護フィルムを引き剥がし、接着層がリードフレーム又は封止層から引き剥がされるときの荷重の最大値を、封止成形後のリードフレーム又は封止層に対する接着力としてそれぞれ記録した。これにより、各仮保護フィルムの封止層硬化後の剥離性を評価した。
CDA194フレーム(リードフレーム、新光電気工業株式会社製)に、実施例及び比較例の仮保護フィルムを、接着層がリードフレームに接する向きで、常温(24℃)、荷重20Nの条件で貼りつけた。リードフレーム及び仮保護フィルムを、空気雰囲気下、オーブン内で、180℃で60分間、200℃で60分の順で条件を変更しながら加熱した。リードフレームの仮保護フィルムとは反対側の面上にプラズマ処理をアルゴンガス雰囲気下(流量:20sccm)、150W、15秒の条件で行った。
モールド成形機(アピックヤマダ株式会社製)を用いて、175℃、6.8MPa、2分間の条件で封止成形を行い、リードフレームの仮保護フィルムとは反対側の面上に封止材(商品名:GE-7470L-A、日立化成株式会社製)により封止層を形成した。
その後180°方向に50mm/分の速度で各仮保護フィルムを引き剥がし、引き剥がした後の封止層及びリードフレーム上の糊残りの状態を確認した。封止層及びリードフレームの表面を合わせた全体の面積に対する、糊残りがあった部分の面積割合に基づいて、以下の基準で6段階で糊残りを評価した。
5:60~100%(残っている接着層が全般に比較的厚い)
4:60~100%(残っている接着層が全般に比較的薄い)
3:30%以上60%未満
2:10%以上30%未満
1:0%超10%未満
0:0%
実施例及び比較例の各仮保護フィルムの5%重量減少温度を、示差熱天秤(セイコーインスツル株式会社製、SSC5200型)を用いて、空気雰囲気下、昇温速度10℃/分の条件で測定した。
Claims (14)
- 支持フィルムと、前記支持フィルム上に設けられ、アクリルゴムを含有する接着層と、を備える、半導体封止成形用仮保護フィルムであって、
前記仮保護フィルムの200℃における固体せん断弾性率が、5.0MPa以上である、半導体封止成形用仮保護フィルム。 - 前記接着層が、剥離性付与剤を更に含有する、請求項1に記載の半導体封止成形用仮保護フィルム。
- 前記剥離性付与剤の含有量が、前記アクリルゴム100質量部に対して6質量部以上60質量部未満である、請求項2に記載の半導体封止成形用仮保護フィルム。
- 前記接着層の厚さが、1μm以上5μm以下である、請求項1~3のいずれか一項に記載の半導体封止成形用仮保護フィルム。
- 前記支持フィルムが、ポリイミドフィルムである、請求項1~4のいずれか一項に記載の半導体封止成形用仮保護フィルム。
- 前記アクリルゴムが、(メタ)アクリル酸ブチル、(メタ)アクリル酸エチル、(メタ)アクリル酸メチル、(メタ)アクリル酸、アクリロニトリル、(メタ)アクリル酸2-ヒドロキシエチル及び(メタ)アクリル酸グリシジルからなる群より選択される少なくとも1種の単量体単位を含む共重合体である、請求項1~5のいずれか一項に記載の半導体封止成形用仮保護フィルム。
- 前記アクリルゴムの重量平均分子量が、450000以上900000以下である、請求項1~6のいずれか一項に記載の半導体封止成形用仮保護フィルム。
- 前記接着層が、24℃において感圧接着性を有する、請求項1~7のいずれか一項に記載の半導体封止成形用仮保護フィルム。
- 前記仮保護フィルムの5%重量減少温度が、350℃以上である、請求項1~8のいずれか一項に記載の半導体封止成形用仮保護フィルム。
- 前記接着層の前記支持フィルムが設けられた面とは反対側の面上に設けられたカバーフィルムを更に備える、請求項1~9のいずれか一項に記載の半導体封止成形用仮保護フィルム。
- ダイパッド及びインナーリードを有するリードフレームと、
請求項1~10のいずれか一項に記載の半導体封止成形用仮保護フィルムと、
を備え、
前記仮保護フィルムが、その接着層が前記リードフレームの片面に接するように前記リードフレームに貼り付けられている、仮保護フィルム付きリードフレーム。 - ダイパッド及びインナーリードを有するリードフレームと、
前記ダイパッドに搭載された半導体素子と、
前記半導体素子と前記インナーリードとを接続するワイヤと、
前記半導体素子及び前記ワイヤを封止している封止層と、
請求項1~10のいずれか一項に記載の半導体封止成形用仮保護フィルムと、
を備え、
前記仮保護フィルムが、その接着層が前記リードフレームの前記半導体素子が搭載されている面とは反対側の面に貼り付けられている、仮保護フィルム付き封止成形体。 - ダイパッド及びインナーリードを有するリードフレームの片面に、請求項1~10のいずれか一項に記載の半導体封止成形用仮保護フィルムを、その接着層が前記リードフレームに接する向きで貼り付ける工程と、
前記ダイパッドの前記仮保護フィルムとは反対側の面上に半導体素子を搭載する工程と、
前記半導体素子と前記インナーリードとを接続するワイヤを設ける工程と、
前記半導体素子及び前記ワイヤを封止する封止層を形成して、前記リードフレーム、前記半導体素子及び前記封止層を有する封止成形体を得る工程と、
前記封止成形体から前記仮保護フィルムを剥離する工程と、
をこの順に備える、半導体装置を製造する方法。 - 前記リードフレームが複数の前記ダイパッドを有し、前記複数のダイパッドの各々に前記半導体素子が搭載され、
当該方法が、前記仮保護フィルムを前記封止成形体から剥離する前又は後に前記封止成形体を分割して、1個の前記ダイパッド及び前記半導体素子を有する半導体装置を得る工程を更に備える、請求項13に記載の方法。
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