TWI502623B - 光罩之製造方法、光罩、及顯示裝置之製造方法 - Google Patents

光罩之製造方法、光罩、及顯示裝置之製造方法 Download PDF

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Publication number
TWI502623B
TWI502623B TW099146691A TW99146691A TWI502623B TW I502623 B TWI502623 B TW I502623B TW 099146691 A TW099146691 A TW 099146691A TW 99146691 A TW99146691 A TW 99146691A TW I502623 B TWI502623 B TW I502623B
Authority
TW
Taiwan
Prior art keywords
pattern
film
transparent substrate
correction
alignment mark
Prior art date
Application number
TW099146691A
Other languages
English (en)
Chinese (zh)
Other versions
TW201203312A (en
Inventor
Tadao Hiwatari
Toshiyuki Tanaka
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of TW201203312A publication Critical patent/TW201203312A/zh
Application granted granted Critical
Publication of TWI502623B publication Critical patent/TWI502623B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW099146691A 2010-01-07 2010-12-29 光罩之製造方法、光罩、及顯示裝置之製造方法 TWI502623B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010001749 2010-01-07

Publications (2)

Publication Number Publication Date
TW201203312A TW201203312A (en) 2012-01-16
TWI502623B true TWI502623B (zh) 2015-10-01

Family

ID=44409340

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099146691A TWI502623B (zh) 2010-01-07 2010-12-29 光罩之製造方法、光罩、及顯示裝置之製造方法

Country Status (4)

Country Link
JP (1) JP5645261B2 (ja)
KR (1) KR101308862B1 (ja)
CN (1) CN102141726B (ja)
TW (1) TWI502623B (ja)

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* Cited by examiner, † Cited by third party
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JPWO2014002794A1 (ja) * 2012-06-27 2016-05-30 株式会社村田製作所 薄膜積層素子の製造方法
JP6157832B2 (ja) * 2012-10-12 2017-07-05 Hoya株式会社 電子デバイスの製造方法、表示装置の製造方法、フォトマスクの製造方法、及びフォトマスク
NL2011592A (en) 2012-10-31 2014-05-06 Asml Netherlands Bv Compensation for patterning device deformation.
DE102016109099B4 (de) * 2016-05-18 2023-01-19 Infineon Technologies Ag Belichtungsmaske, Belichtungsvorrichtung und Verfahren zum Kalibrieren einer Belichtungsvorrichtung
KR101918380B1 (ko) * 2017-01-06 2018-11-13 가부시키가이샤 에스케이 일렉트로닉스 얼라이먼트 패턴을 갖는 포토 마스크 블랭크 및 이를 이용한 포토 마스크 및 그 제조 방법
CN108563098A (zh) * 2018-01-17 2018-09-21 京东方科技集团股份有限公司 一种掩膜版及其制备方法
JP7336201B2 (ja) * 2019-02-18 2023-08-31 キヤノン株式会社 形成方法、パターン形成システム、および物品の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080037702A (ko) * 2005-09-21 2008-04-30 다이니폰 인사츠 가부시키가이샤 계조를 갖는 포토마스크 및 그 제조 방법
JP2008116517A (ja) * 2006-11-01 2008-05-22 Sk Electronics:Kk 中間調フォトマスク及びその製造方法

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JP3561556B2 (ja) * 1995-06-29 2004-09-02 株式会社ルネサステクノロジ マスクの製造方法
TW502132B (en) * 2000-08-30 2002-09-11 Toshiba Corp Method for producing photomask
JP2003248329A (ja) * 2002-02-26 2003-09-05 Canon Inc 半導体装置及びその製造方法
JP2004170948A (ja) * 2002-10-30 2004-06-17 Nikon Corp パターン転写用マスク、マスク作製方法及び露光方法
JP3791484B2 (ja) * 2002-11-14 2006-06-28 ソニー株式会社 露光方法および半導体装置の製造方法
JP2004235221A (ja) 2003-01-28 2004-08-19 Sony Corp マスクの製造方法、パターンの形成方法、歪計測用フォトマスクおよび半導体装置の製造方法
JP5196098B2 (ja) * 2005-09-21 2013-05-15 大日本印刷株式会社 階調をもつフォトマスクおよびその製造方法
JP2007248943A (ja) * 2006-03-17 2007-09-27 Hoya Corp パターン形成方法及びグレートーンマスクの製造方法
TW200913013A (en) * 2007-07-30 2009-03-16 Hoya Corp Method of manufacturing a gray tone mask, gray tone mask, method of inspecting a gray tone mask, and method of transferring a pattern

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080037702A (ko) * 2005-09-21 2008-04-30 다이니폰 인사츠 가부시키가이샤 계조를 갖는 포토마스크 및 그 제조 방법
CN101268417A (zh) * 2005-09-21 2008-09-17 大日本印刷株式会社 具有灰度的光掩模及其制造方法
US20090220867A1 (en) * 2005-09-21 2009-09-03 Dai Nippon Printing Co., Ltd Gradated photomask and its fabrication process
JP2008116517A (ja) * 2006-11-01 2008-05-22 Sk Electronics:Kk 中間調フォトマスク及びその製造方法

Also Published As

Publication number Publication date
KR101308862B1 (ko) 2013-10-24
CN102141726A (zh) 2011-08-03
CN102141726B (zh) 2013-01-09
JP2011158900A (ja) 2011-08-18
KR20110081108A (ko) 2011-07-13
TW201203312A (en) 2012-01-16
JP5645261B2 (ja) 2014-12-24

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