TWI500749B - 使用適用於增加氧化矽移除之研磨組成物化學機械研磨基板之方法 - Google Patents

使用適用於增加氧化矽移除之研磨組成物化學機械研磨基板之方法 Download PDF

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Publication number
TWI500749B
TWI500749B TW100108480A TW100108480A TWI500749B TW I500749 B TWI500749 B TW I500749B TW 100108480 A TW100108480 A TW 100108480A TW 100108480 A TW100108480 A TW 100108480A TW I500749 B TWI500749 B TW I500749B
Authority
TW
Taiwan
Prior art keywords
chemical mechanical
mechanical polishing
substrate
polishing composition
cerium oxide
Prior art date
Application number
TW100108480A
Other languages
English (en)
Chinese (zh)
Other versions
TW201139635A (en
Inventor
郭毅
劉振東
阿瑞 瑞迪
張廣雲
Original Assignee
羅門哈斯電子材料Ｃｍｐ控股公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 羅門哈斯電子材料Ｃｍｐ控股公司 filed Critical 羅門哈斯電子材料Ｃｍｐ控股公司
Publication of TW201139635A publication Critical patent/TW201139635A/zh
Application granted granted Critical
Publication of TWI500749B publication Critical patent/TWI500749B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW100108480A 2010-03-31 2011-03-14 使用適用於增加氧化矽移除之研磨組成物化學機械研磨基板之方法 TWI500749B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/750,799 US8431490B2 (en) 2010-03-31 2010-03-31 Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal

Publications (2)

Publication Number Publication Date
TW201139635A TW201139635A (en) 2011-11-16
TWI500749B true TWI500749B (zh) 2015-09-21

Family

ID=44653739

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100108480A TWI500749B (zh) 2010-03-31 2011-03-14 使用適用於增加氧化矽移除之研磨組成物化學機械研磨基板之方法

Country Status (7)

Country Link
US (1) US8431490B2 (https=)
JP (1) JP5861906B2 (https=)
KR (1) KR101672809B1 (https=)
CN (1) CN102206465B (https=)
DE (1) DE102011013982B4 (https=)
FR (1) FR2958200B1 (https=)
TW (1) TWI500749B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI754376B (zh) * 2019-09-11 2022-02-01 美商羅門哈斯電子材料Ｃｍｐ控股公司 選擇性化學機械拋光鈷、氧化鋯、多晶矽及二氧化矽膜之方法

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US9012327B2 (en) * 2013-09-18 2015-04-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Low defect chemical mechanical polishing composition
US9275899B2 (en) 2014-06-27 2016-03-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for polishing tungsten
JP6533439B2 (ja) * 2015-09-15 2019-06-19 株式会社フジミインコーポレーテッド 研磨用組成物
US9484212B1 (en) * 2015-10-30 2016-11-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method
CN107953225A (zh) * 2016-10-14 2018-04-24 上海新昇半导体科技有限公司 半导体晶圆的抛光方法
US10683439B2 (en) * 2018-03-15 2020-06-16 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing composition and method of polishing a substrate having enhanced defect inhibition
JP7222750B2 (ja) * 2019-02-14 2023-02-15 ニッタ・デュポン株式会社 研磨用組成物
US12291655B2 (en) * 2021-04-27 2025-05-06 DuPont Electronic Materials Holding, Inc. Polishing composition and method of polishing a substrate having enhanced defect reduction

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EP1505133B1 (en) * 2003-08-05 2008-03-26 Rohm and Haas Electronic Materials CMP Holdings, Inc. Composition for polishing semiconductor layers

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EP1505133B1 (en) * 2003-08-05 2008-03-26 Rohm and Haas Electronic Materials CMP Holdings, Inc. Composition for polishing semiconductor layers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI754376B (zh) * 2019-09-11 2022-02-01 美商羅門哈斯電子材料Ｃｍｐ控股公司 選擇性化學機械拋光鈷、氧化鋯、多晶矽及二氧化矽膜之方法

Also Published As

Publication number Publication date
US20110244685A1 (en) 2011-10-06
CN102206465B (zh) 2014-04-02
JP2011216873A (ja) 2011-10-27
FR2958200B1 (fr) 2015-04-17
TW201139635A (en) 2011-11-16
FR2958200A1 (fr) 2011-10-07
KR20110109859A (ko) 2011-10-06
CN102206465A (zh) 2011-10-05
KR101672809B1 (ko) 2016-11-04
JP5861906B2 (ja) 2016-02-16
DE102011013982B4 (de) 2023-08-10
DE102011013982A1 (de) 2014-02-13
US8431490B2 (en) 2013-04-30

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