DE102011013982B4 - Verfahren zum chemisch-mechanischen Polieren eines Substrats mit einer Polierzusammensetzung, die zur Erhöhung der Siliziumoxidentfernung angepasst ist. - Google Patents

Verfahren zum chemisch-mechanischen Polieren eines Substrats mit einer Polierzusammensetzung, die zur Erhöhung der Siliziumoxidentfernung angepasst ist. Download PDF

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Publication number
DE102011013982B4
DE102011013982B4 DE102011013982.6A DE102011013982A DE102011013982B4 DE 102011013982 B4 DE102011013982 B4 DE 102011013982B4 DE 102011013982 A DE102011013982 A DE 102011013982A DE 102011013982 B4 DE102011013982 B4 DE 102011013982B4
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DE
Germany
Prior art keywords
mechanical polishing
chemical mechanical
substrate
formula
polishing composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102011013982.6A
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German (de)
English (en)
Other versions
DE102011013982A1 (de
Inventor
Yi Guo
Zhendong Liu
Kancharla-Arun Kumar Reddy
Guangyun Zhang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of DE102011013982A1 publication Critical patent/DE102011013982A1/de
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Publication of DE102011013982B4 publication Critical patent/DE102011013982B4/de
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
DE102011013982.6A 2010-03-31 2011-03-15 Verfahren zum chemisch-mechanischen Polieren eines Substrats mit einer Polierzusammensetzung, die zur Erhöhung der Siliziumoxidentfernung angepasst ist. Active DE102011013982B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/750,799 2010-03-31
US12/750,799 US8431490B2 (en) 2010-03-31 2010-03-31 Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal

Publications (2)

Publication Number Publication Date
DE102011013982A1 DE102011013982A1 (de) 2014-02-13
DE102011013982B4 true DE102011013982B4 (de) 2023-08-10

Family

ID=44653739

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102011013982.6A Active DE102011013982B4 (de) 2010-03-31 2011-03-15 Verfahren zum chemisch-mechanischen Polieren eines Substrats mit einer Polierzusammensetzung, die zur Erhöhung der Siliziumoxidentfernung angepasst ist.

Country Status (7)

Country Link
US (1) US8431490B2 (https=)
JP (1) JP5861906B2 (https=)
KR (1) KR101672809B1 (https=)
CN (1) CN102206465B (https=)
DE (1) DE102011013982B4 (https=)
FR (1) FR2958200B1 (https=)
TW (1) TWI500749B (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9012327B2 (en) * 2013-09-18 2015-04-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Low defect chemical mechanical polishing composition
US9275899B2 (en) 2014-06-27 2016-03-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for polishing tungsten
JP6533439B2 (ja) * 2015-09-15 2019-06-19 株式会社フジミインコーポレーテッド 研磨用組成物
US9484212B1 (en) * 2015-10-30 2016-11-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method
CN107953225A (zh) * 2016-10-14 2018-04-24 上海新昇半导体科技有限公司 半导体晶圆的抛光方法
US10683439B2 (en) * 2018-03-15 2020-06-16 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing composition and method of polishing a substrate having enhanced defect inhibition
JP7222750B2 (ja) * 2019-02-14 2023-02-15 ニッタ・デュポン株式会社 研磨用組成物
US11292938B2 (en) 2019-09-11 2022-04-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of selective chemical mechanical polishing cobalt, zirconium oxide, poly-silicon and silicon dioxide films
US12291655B2 (en) * 2021-04-27 2025-05-06 DuPont Electronic Materials Holding, Inc. Polishing composition and method of polishing a substrate having enhanced defect reduction

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6322600B1 (en) 1997-04-23 2001-11-27 Advanced Technology Materials, Inc. Planarization compositions and methods for removing interlayer dielectric films
US20040186206A1 (en) 2002-12-26 2004-09-23 Yasuhiro Yoneda Polishing composition
US20050205837A1 (en) 2004-03-19 2005-09-22 Toshihiro Miwa Polishing composition and polishing method
DE602004012674T2 (de) 2003-08-05 2009-04-09 Rohm and Haas Electronic Materials CMP Holdings, Inc., Newark Zusammensetzung zum Polieren von Halbleiterschichten

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Publication number Priority date Publication date Assignee Title
JP2000136375A (ja) * 1998-10-30 2000-05-16 Okamoto Machine Tool Works Ltd 研磨剤スラリ−
JP4644323B2 (ja) * 1999-04-28 2011-03-02 Ａｇｃセイミケミカル株式会社 有機アルカリを含有する半導体用研磨剤
JP2001162515A (ja) * 1999-07-08 2001-06-19 Ricoh Co Ltd 研磨布およびその製造方法並びにマイクロカプセルおよびその製造方法
US6303506B1 (en) * 1999-09-30 2001-10-16 Infineon Technologies Ag Compositions for and method of reducing/eliminating scratches and defects in silicon dioxide during CMP process
JP3956364B2 (ja) * 2001-04-09 2007-08-08 東洋ゴム工業株式会社 ポリウレタン組成物および研磨パッド
JP2004266155A (ja) * 2003-03-03 2004-09-24 Jsr Corp 化学機械研磨用水系分散体およびこれを用いた化学機械研磨方法ならびに半導体装置の製造方法
JP2004303983A (ja) * 2003-03-31 2004-10-28 Fuji Photo Film Co Ltd 研磨パッド
US7300480B2 (en) * 2003-09-25 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High-rate barrier polishing composition
US20060124026A1 (en) * 2004-12-10 2006-06-15 3M Innovative Properties Company Polishing solutions
US7446046B2 (en) 2005-01-06 2008-11-04 Intel Corporation Selective polish for fabricating electronic devices
US7452481B2 (en) * 2005-05-16 2008-11-18 Kabushiki Kaisha Kobe Seiko Sho Polishing slurry and method of reclaiming wafers
US7585340B2 (en) * 2006-04-27 2009-09-08 Cabot Microelectronics Corporation Polishing composition containing polyether amine
WO2007130350A1 (en) * 2006-05-02 2007-11-15 Cabot Microelectronics Corporation Compositions and methods for cmp of semiconductor materials
KR100827591B1 (ko) * 2006-11-27 2008-05-07 제일모직주식회사 화학적 기계적 연마용 슬러리 조성물 및 그 전구체 조성물
US7820068B2 (en) * 2007-02-21 2010-10-26 Houghton Technical Corp. Chemical assisted lapping and polishing of metals
JP2009278061A (ja) * 2008-04-16 2009-11-26 Hitachi Chem Co Ltd Ｃｍｐ用研磨液及び研磨方法
US20110045203A1 (en) * 2009-08-21 2011-02-24 E. I. Du Pont De Nemours And Company Process for inhibiting oxide formation on copper surfaces

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6322600B1 (en) 1997-04-23 2001-11-27 Advanced Technology Materials, Inc. Planarization compositions and methods for removing interlayer dielectric films
US20040186206A1 (en) 2002-12-26 2004-09-23 Yasuhiro Yoneda Polishing composition
DE602004012674T2 (de) 2003-08-05 2009-04-09 Rohm and Haas Electronic Materials CMP Holdings, Inc., Newark Zusammensetzung zum Polieren von Halbleiterschichten
US20050205837A1 (en) 2004-03-19 2005-09-22 Toshihiro Miwa Polishing composition and polishing method

Also Published As

Publication number Publication date
US20110244685A1 (en) 2011-10-06
CN102206465B (zh) 2014-04-02
JP2011216873A (ja) 2011-10-27
FR2958200B1 (fr) 2015-04-17
TW201139635A (en) 2011-11-16
FR2958200A1 (fr) 2011-10-07
KR20110109859A (ko) 2011-10-06
CN102206465A (zh) 2011-10-05
KR101672809B1 (ko) 2016-11-04
JP5861906B2 (ja) 2016-02-16
DE102011013982A1 (de) 2014-02-13
TWI500749B (zh) 2015-09-21
US8431490B2 (en) 2013-04-30

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