TWI493652B - 基板支撐設備及基板處理設備 - Google Patents

基板支撐設備及基板處理設備 Download PDF

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Publication number
TWI493652B
TWI493652B TW102112344A TW102112344A TWI493652B TW I493652 B TWI493652 B TW I493652B TW 102112344 A TW102112344 A TW 102112344A TW 102112344 A TW102112344 A TW 102112344A TW I493652 B TWI493652 B TW I493652B
Authority
TW
Taiwan
Prior art keywords
substrate
bottom plate
top plate
sealing member
plate
Prior art date
Application number
TW102112344A
Other languages
English (en)
Chinese (zh)
Other versions
TW201403744A (zh
Inventor
Sang-Gon Chung
Hyoung-Won Kim
You-Shik Shin
Original Assignee
Gigalane Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gigalane Co Ltd filed Critical Gigalane Co Ltd
Publication of TW201403744A publication Critical patent/TW201403744A/zh
Application granted granted Critical
Publication of TWI493652B publication Critical patent/TWI493652B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
TW102112344A 2012-07-03 2013-04-08 基板支撐設備及基板處理設備 TWI493652B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120072522A KR101228484B1 (ko) 2012-07-03 2012-07-03 플라즈마 처리장치의 기판 재치대

Publications (2)

Publication Number Publication Date
TW201403744A TW201403744A (zh) 2014-01-16
TWI493652B true TWI493652B (zh) 2015-07-21

Family

ID=47842913

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102112344A TWI493652B (zh) 2012-07-03 2013-04-08 基板支撐設備及基板處理設備

Country Status (4)

Country Link
JP (1) JP5777656B2 (ko)
KR (1) KR101228484B1 (ko)
CN (1) CN103531513B (ko)
TW (1) TWI493652B (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101950692B1 (ko) * 2012-11-08 2019-02-21 엘지이노텍 주식회사 반도체 식각 장치
KR101599798B1 (ko) * 2014-05-07 2016-03-14 세교 (주) 플라즈마 처리장치의 기판재치대
TWI584706B (zh) * 2014-07-24 2017-05-21 Uvat Technology Co Ltd A plasma etch device for a printed circuit board
KR101600269B1 (ko) * 2014-10-24 2016-03-07 세교 (주) 플라즈마 처리장치의 기판재치대

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003197607A (ja) * 2001-12-26 2003-07-11 Ulvac Japan Ltd 焦電性高誘電体のエッチング方法及び装置
JP2007109770A (ja) * 2005-10-12 2007-04-26 Matsushita Electric Ind Co Ltd プラズマ処理装置及びプラズマ処理方法
JP2010225775A (ja) * 2009-03-23 2010-10-07 Panasonic Corp プラズマ処理装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63236328A (ja) * 1987-03-25 1988-10-03 Hitachi Ltd 試料温度制御機構
JP4317608B2 (ja) * 1999-01-18 2009-08-19 東京エレクトロン株式会社 成膜装置
CN1249777C (zh) * 2001-08-27 2006-04-05 松下电器产业株式会社 等离子体处理装置及等离子体处理方法
JP4539981B2 (ja) * 2005-05-17 2010-09-08 株式会社アルバック 基板保持装置
KR100734016B1 (ko) * 2006-07-06 2007-06-29 주식회사 래디언테크 기판 재치대 및 이를 구비한 플라즈마 처리 장치
KR100981120B1 (ko) * 2009-09-09 2010-09-10 주식회사 맥시스 트레이 및 이를 이용한 제조장치
KR101040697B1 (ko) * 2009-11-25 2011-06-13 세메스 주식회사 정전척
JP2011114178A (ja) * 2009-11-27 2011-06-09 Samco Inc プラズマ処理装置及びプラズマ処理方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003197607A (ja) * 2001-12-26 2003-07-11 Ulvac Japan Ltd 焦電性高誘電体のエッチング方法及び装置
JP2007109770A (ja) * 2005-10-12 2007-04-26 Matsushita Electric Ind Co Ltd プラズマ処理装置及びプラズマ処理方法
JP2010225775A (ja) * 2009-03-23 2010-10-07 Panasonic Corp プラズマ処理装置

Also Published As

Publication number Publication date
TW201403744A (zh) 2014-01-16
CN103531513A (zh) 2014-01-22
JP5777656B2 (ja) 2015-09-09
CN103531513B (zh) 2016-04-13
KR101228484B1 (ko) 2013-01-31
JP2014013882A (ja) 2014-01-23

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