TWI493652B - A substrate-supporting apparatus and a substrate-processing apparatus - Google Patents

Description

Substrate support device and substrate processing device

The present invention relates to a substrate supporting apparatus and a substrate processing apparatus, and more particularly to a substrate supporting apparatus and a substrate processing apparatus which can apply a heat conductive gas to a plurality of substrates to improve heat transfer efficiency.

In general, a plasma processing apparatus for manufacturing devices such as semiconductors, LEDs, and flat panel displays generates plasma by forming an electric field and a magnetic field in a reaction chamber, and uses the plasma to perform various processes. A conventional plasma processing apparatus includes a substrate supporting apparatus for holding a substrate on a substrate supporting apparatus, and specifically, the substrate supporting apparatus may have a configuration in which a plurality of substrates are simultaneously held and processed to achieve production improvement. When this plasma treatment process is performed, the temperature of the substrate mounted on the substrate supporting device is increased due to the temperature of the plasma. In this case, if the temperature of the substrate deviates from the temperature range, the processing failure may be caused.

In order to solve this problem, the Korean patent of the applicant of the present invention No. 10-0734016 discloses a substrate support apparatus configured to form a flow path for supplying a cooling gas to maintain a temperature of the substrate within a constant range. In the patent document, a substrate supporting apparatus includes a bottom plate disposed on a substrate chuck, and a top plate coupled to a top surface of the bottom plate to expose a top surface of the substrate and spaced apart from the bottom plate to be supplied via the bottom plate The cooling gas is supplied to the bottom surface of the substrate.

The top plate and the bottom plate are coupled to each other using elements such as connecting bolts. A plurality of O-rings are placed between the top plate and the bottom plate to limit the supply of cooling gas. By using a plurality of O-rings, the cooling gas supplied through the flow path formed in the bottom plate can be supplied to the back surface of the substrate. However, the presence of many O-rings also prevents the supply of cooling gas towards the lower portion of the top plate. Therefore, the temperature of the top plate continues to rise.

This increase in temperature of the top plate results in temperature non-uniformity of the substrate around the opening of the top plate (the top surface of the substrate is exposed from the opening). Subsequently, this temperature increase causes uneven curing or burning in the photoresist pattern formed on the substrate for plasma etching, causing processing failure.

In addition, since a plurality of O-rings are used, the position of the O-ring can be easily changed when the bottom plate and the top plate are coupled. This can lead to problems such as coupling difficulties and increased costs.

The present invention provides a substrate supporting apparatus and a substrate processing apparatus in which the temperature of the substrate can be maintained within a constant range. According to the present invention, the temperature of the substrate supporting device can also be Maintained in a constant range.

In addition, the present invention provides a substrate supporting apparatus and a substrate processing apparatus in which coupling of devices can be easily performed and the number of O-rings can be reduced to save production costs.

In accordance with an embodiment of the present invention, a substrate support apparatus includes a bottom plate configured to support a substrate on the bottom plate and having a plurality of supply tubes through which cooling gas flows, and a top plate configured to be removably coupled To the bottom plate, and having cavities to expose a top surface of the substrate supported on the bottom plate; and a sealing member configured to be coupled to the bottom plate, and at the top plate and the bottom plate A cooling space is formed between the substrate and the substrate.

The top plate surrounds a top portion and a side of the bottom plate. A flow path through which the cooling gas flows is formed between the side of the bottom plate and a side wall of the top plate. The sealing member may seal a gap between the substrate and the top plate.

The top plate is provided with a recessed storage portion that houses the bottom plate. The receiving portion has a diameter larger than a diameter of the bottom plate. A flow path is formed between a side surface of the bottom plate and a side wall of the housing portion to supply the cooling gas to the periphery of the back surface of the top plate through the flow path.

The top plate covers a top portion of the bottom plate. The sealing member seals a gap between the substrate and the top plate. The sealing member may include a seal ring disposed between the periphery of the top plate and the periphery of the bottom plate.

The cooling space includes a first portion formed between the substrate and the bottom plate a cooling space and a second cooling space formed between the top plate and the bottom plate. The bottom plate may include a first supply pipe for supplying the cooling gas to the first cooling space and a second supply pipe for supplying the cooling gas to the second cooling space.

The bottom plate may include an annular receiving recess in which a portion of the lower portion of the sealing member is inserted and held.

The sealing member includes a lower portion that is inserted into the receiving recess and an upper portion that protrudes toward a top portion of the receiving recess. An outer side of the upper portion is in contact with the top plate and an inner side is in contact with the substrate to prevent the cooling gas from leaking into a space between the substrate and the top plate.

The upper portion of the sealing member may have a cross-sectional width that is greater than, equal to, or less than a cross-sectional width of the lower portion.

The cross-sectional shape of the upper portion of the sealing member may be at least one of a shape divided into left and right sides, a polygonal shape, a circular shape, and an elliptical shape.

The cross-sectional width of the lower portion of the sealing member may have the same width in the up and down direction, or may have a gradually increasing width downward.

The sealing member may be formed to correspond to a ring shape of the substrate.

The sealing member may include a first sealing member in contact with the substrate and a second sealing member in contact with the top plate.

In accordance with another embodiment of the present invention, a substrate processing apparatus includes a chamber configured to form a substrate processing space, a substrate chuck configured to be disposed in a lower portion of the chamber portion, and a substrate support unit disposed On the substrate chuck Positioning a substrate therein, the substrate support unit having a top plate and a bottom plate configured to be coupled to each other to insert the substrate therebetween, and having each configured to supply cooling gas to the substrate a back surface and a cooling path of the top plate.

The cooling path may include: a first cooling path, a first supply tube passing through the bottom plate, and a first cooling space connected to the first supply tube and formed between the substrate and the bottom plate; And a second cooling path provided with a second supply pipe passing through the bottom plate and a second cooling space connected to the second supply pipe and formed between the top plate and the bottom plate.

The first supply tube and the second supply tube are connectable to a gas passage through the substrate chuck.

The apparatus can include a sealing member coupled to the bottom plate and configured to separate the cooling paths from one another.

The substrate supporting apparatus and the substrate processing apparatus according to the present invention can supply a cooling gas into a space between a bottom plate on which the substrate is mounted and a top plate on which the substrate is held. Therefore, the temperature uniformity of the substrate is improved to prevent processing failure and increase production yield.

Moreover, the substrate supporting apparatus and the substrate processing apparatus according to the present invention can reduce the number of O-rings and hold the position of the O-rings to prevent the position of the O-rings from changing when the substrate supporting apparatus is assembled. Therefore, the coupling of the device is easily completed to reduce the production cost.

1‧‧‧Substrate

2‧‧‧Substrate support equipment

3‧‧‧Upper electrode unit

3a‧‧‧electrode support

3b‧‧‧Upper electrode plate

4‧‧‧ gas inlet

5‧‧‧ gas passage

6‧‧‧Cooling gas supply

7‧‧‧Exhaust port

8‧‧‧Exhaust system

10‧‧‧lower electrode unit

10a‧‧‧Substrate chuck

10b‧‧‧lower electrode

10c‧‧‧Substrate lift

11‧‧‧Upper high frequency power supply

12‧‧‧Lower high frequency power supply

13‧‧‧ gas supply

14‧‧‧Valve

20‧‧‧floor

21‧‧‧First supply tube

22‧‧‧Second supply tube

23‧‧‧ Storage recess

23a‧‧‧ Storage recess

23b‧‧‧ Storage recess

30‧‧‧ top board

31‧‧‧Flow path

32‧‧‧ recessed storage section

33‧‧‧ hole

34‧‧‧Protrusion

40‧‧‧ Sealing members

40a‧‧‧First sealing member

40b‧‧‧Second sealing member

41‧‧‧ lower part

41a‧‧‧ lower part

41b‧‧‧ lower part

42‧‧‧ upper part

42a‧‧‧ upper part

42b‧‧‧ upper part

50‧‧‧Seal ring

60‧‧‧Seal ring

C1‧‧‧First cooling space

C2‧‧‧Second cooling space

1 is a cross-sectional view of a substrate supporting apparatus in accordance with an embodiment of the present invention.

2 is an exploded perspective view of a substrate supporting apparatus in accordance with an embodiment of the present invention.

3 illustrates the configuration of the cross section of FIG. 2 in the case where the components are coupled.

4 is a cross-sectional view of a sealing member in accordance with an embodiment of the present invention.

5 to 10 are cross-sectional views of a sealing member in accordance with a modified embodiment of the present invention.

Figure 11 is a cross-sectional view of a substrate supporting apparatus in accordance with a modified embodiment of the present invention.

Embodiments in accordance with the present invention will now be described in detail with reference to the accompanying drawings. However, the invention is not limited to the embodiments described below, but can be embodied in a variety of different configurations. The embodiments are provided to fully understand the present invention, and the scope of the present invention can be fully understood by those skilled in the art. The size of the elements in the drawings may be partially expanded to clearly describe the embodiments. Like numbers indicate similar elements in the drawings.

Hereinafter, a substrate supporting apparatus and a substrate processing apparatus according to embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a cross section of a substrate supporting apparatus according to an embodiment of the present invention 2 is an exploded perspective view of a substrate supporting apparatus according to an embodiment of the present invention, FIG. 3 is a cross-sectional configuration of FIG. 2 in the case where the elements are coupled, and FIGS. 4 to 10 are various according to the present invention. A cross-sectional view of the sealing member of the embodiment. Moreover, Figure 11 is a cross-sectional view of a substrate supporting apparatus in accordance with a modified embodiment of the present invention.

Referring to FIG. 1, a substrate processing apparatus (for example, a plasma processing apparatus) includes: a reaction chamber 9; an upper electrode unit 3 disposed at an upper portion of the interior of the reaction chamber 9; and a lower electrode unit 10 facing the upper electrode unit 3 and It is disposed at a lower portion of the inside of the reaction chamber 9. The reaction chamber 9 provides a space that is hermetically sealed from the outside, in which plasma processing (for example, etching treatment) is performed.

The exhaust port 7 is connected to the lower portion of the reaction chamber 9, and the exhaust system 8 is connected to the exhaust port 7. The exhaust system 8 uses a vacuum pump, such as a turbo molecular pump. The pump produces a desired low pressure condition within the reaction chamber 9 by vacuum suction, for example at a desired pressure below 0.1 mTorr. The exhaust port 7 and the exhaust system 8 may be formed at a lower side of the reaction chamber 9 instead of a lower portion of the reaction chamber 9.

A gate valve (not shown) is installed at one side wall of the reaction chamber 9. With the gate valve open, the substrate 1 can be transferred between adjacent road-rock chambers (not shown). A single gate valve can be installed at the reaction chamber 9 to load or unload the substrate 1. Alternatively, a gate valve may be installed at one side wall and the other side wall of the reaction chamber 9 to individually perform loading and unloading of the substrate 1.

The upper electrode unit 3 is disposed at an upper portion of the inside of the reaction chamber 9, and a plurality of injection holes are formed in a lower portion of the upper electrode unit 3. The upper electrode unit 3 is provided with: an upper electrode plate 3b whose surface is formed of metal (for example, aluminum); And an electrode support member 3a whose surface is formed of a conductive material to support the upper electrode plate 3b.

The gas input port 4 is mounted at the electrode support 3a. The gas supply source 13 is connected to the gas input port 4. Further, a valve 14 and a mass flow controller (not shown) are provided between the gas input port 4 and the gas supply source 13 to supply the reaction gas into the reaction chamber 9 under the control of the valve and the mass flow controller. As the reaction gas, a gas containing a halogen atom such as a fluorocarbon gas or a hydrofluorocarbon gas can be suitably used. Further, a processing gas such as Ar, CF3, or O2 may also be used.

Further, the upper high frequency power supply 11 is connected to the upper electrode unit 3 through an upper adapter (not shown). The high frequency power generated from the upper high frequency power supply 11 is injected into the upper electrode unit 3 to activate the reaction gas and form a plasma.

The lower electrode unit 10 is disposed at a lower portion of the reaction chamber 9 and faces the upper electrode unit 3. The lower electrode unit 10 includes a substrate lifter 10c and a lower electrode 10b, and a substrate chuck 10a placed on an upper portion of the substrate lifter 10c. The substrate lifter 10c is made of an insulator. The lower portion of the substrate elevator 10c is mounted at the bottom surface of the reaction chamber 9, and the lower electrode 10b and the substrate chuck 10a are mounted on the upper portion of the substrate elevator 10c so that the lower electrode 10b and the substrate chuck 10a can be supported in the lower portion Upper, and the substrate 1 can be moved up and down.

A cooler (not shown) is connected to the lower electrode unit 10, and a coolant introduction pipe (not shown) and a coolant discharge pipe (not shown) are formed in the lower electrode unit 10 and connected to the cooler. Therefore, the coolant supplied from the cooler is discharged to the coolant discharge pipe through the coolant introduction pipe. Therefore, the coolant is looped and the cold heat is transferred to the substrate 1 through the substrate chuck 10a. The substrate chuck 10a can use an electrostatic chuck or a machine Mechanical chuck. When an electrostatic chuck is used as the substrate chuck 10a, the substrate supporting device 2 may be formed of a ceramic material to generate an electrostatic force in a device for supporting the substrate. The substrate supporting device 2 preferably has a thickness sufficient to generate and apply an electrostatic force.

If the thickness of the substrate supporting device 2 is too thick, electrostatic force is not applied to the substrate 1 and it is difficult to hold the substrate. In this case, if the electrostatic force is increased to raise the direct current voltage, the portion having the poor insulating property present in the reaction chamber 9 may undergo dielectric breakdown to cause damage of the reaction chamber 9.

The lower high frequency power supply 12 is connected to the lower electrode 10b of the lower electrode unit 10 by a lower adapter (not shown). Therefore, when the substrate 1 is treated with plasma, high frequency power is supplied to the lower electrode unit 10 through the lower high frequency power supply 12. Therefore, the high frequency power applied to the lower portion pulls ions in the plasma formed between the upper electrode unit 3 and the lower electrode unit 10 to the lower electrode unit 10 to perform substrate processing.

A ring focus ring can be mounted around the lower electrode 10b and the substrate chuck 10a. The focus ring is made of a conductive material such as tantalum. The focus ring concentrates the ions in the plasma toward the substrate 1 to improve the uniformity of the etching.

The lower electrode unit 10 has a gas passage 5 formed through the inside of the lower electrode unit 10. The gas passage 5 is connected to a cooling gas supply source 6 that stores cooling gas. A gas such as helium is supplied to the lower portion of the substrate 1 through the gas passage 5 across the substrate supporting device 2. This heat transfer gas can effectively cool the heat that may be generated in the substrate 1.

This figure shows that a single gas channel 5 is formed at the lower electrode unit 10, However, multiple gas channels can be formed.

Moreover, the substrate supporting device 2 is disposed on the substrate chuck 10a to position the plurality of substrates 1 and transfer the heat-conducting gas to the substrate 1.

Referring to FIGS. 2 and 3, a substrate supporting apparatus 2 according to an embodiment of the present invention includes a bottom plate 20 disposed on a substrate chuck 10a to which a cooling gas is supplied, and configured to include a plurality of first supply tubes 21 and more The second supply pipe 22, the first supply pipe 21 and the second supply pipe 22 vertically transfer the cooling gas supplied via the substrate chuck 10a to the top side; the top plate 30, which accommodates the bottom surface of the bottom plate 20, and is configured to form a flow path 31 spaced apart from a side surface of the bottom plate 20; and a sealing member 40 held in the housing recess 23 provided in the bottom plate 20 to support the periphery of the bottom surface of the substrate 1 and prevent the cooling gas from leaking to the substrate 1 and the top plate In the space between 30. In other words, the substrate support apparatus 2 is configured to form a single unit by coupling the bottom plate 20, the top plate 30, and the sealing member 40.

Now, the configuration and function of the substrate supporting apparatus having the configuration described above according to a preferred embodiment of the present invention will be described in detail.

First, the bottom plate 20 has a circular plate shape. A plurality of first supply tubes 21 and second supply tubes 22 are formed at the bottom plate 20 while vertically passing through the bottom plate. A plurality of first supply tubes 21 are placed at the lower center of the substrate 1, and a plurality of second supply tubes 22 are placed under the top plate 30 at the interface area between the substrates 1.

That is, the first supply pipe 21 can directly supply the cooling gas supplied via the substrate chuck 10a to the bottom surface of the substrate 1 to prevent the substrate 1 from being overheated during the plasma processing. Moreover, the second supply pipe 22 can supply the cold via the substrate chuck 10a. Gas is supplied directly to the bottom surface of the top plate 30 to prevent the top plate 30 from overheating.

A single second supply tube 22 is illustrated in Figure 3 (cross-sectional view), but more than one second supply tube 22 may be formed at the area between the substrates 1 to be mounted, as shown in Figure 2.

A housing recess 23 is provided in the bottom plate 20 to insert and hold the annular sealing member 40 therein. Preferably, the housing recess 23 has a size that positions the periphery of the substrate 1 to be positioned at the center of the housing recess 23 .

The number of the housing recesses 23 provided in the bottom plate 20 may depend on the number of substrates 1 to be mounted.

4 is a cross-sectional view of a sealing member 40 in accordance with an embodiment of the present invention.

Referring to FIG. 4, when the sealing member 40 is inserted and held in the housing recess 23, a part of the lower portion thereof is completely housed and held in the housing recess 23, and the upper portion protrudes toward the outside of the housing recess 23. The upper portion may have a shape in which the width is increased in the left-right direction around the center of its cross section.

In this shape, the outer side (outer side of the ring) of the upper portion 42 of the annular sealing member 40 can support and seal the bottom surface of the top plate 30, and the inner side of the upper portion 42 of the sealing member 40 can support the bottom surface of the substrate 1. Around, as will be described below. Therefore, the sealing member 40 can prevent the cooling gas from leaking into the space between the substrate 1 and the top plate 30.

5 through 10 are cross-sectional views of a sealing member 40 in accordance with a modified embodiment of the present invention.

First, referring to Figures 5 and 6, the sealing member 40 includes an insertion receiving recess The lower portion 41 of the 23 and the top portion toward the receiving recess 23 protrude and support the substrate 1 and the upper portion 42 around the top plate 30 around the substrate 1. The cross section of the upper portion 41 may have a rectangular shape, and the width of the upper portion 41 may be greater than the width of the lower portion. Alternatively, the cross section of the upper portion 41 may have a circular shape, and the diameter of the circle of the upper portion 41 may be greater than the width of the lower portion.

Thus, the sealing member 40 according to the present invention can be modified to have various configurations and shapes. Preferably, the cross-sectional width of the sealing member 40 may be wider than the gap between the substrate 1 and the top plate 30.

Referring to Figures 7 and 8, unlike the sealing member 40 shown in Figures 5 and 6, the upper portion 42 and the lower portion 41 may have the same cross-sectional width, or the cross-sectional width of the upper portion 42 may be larger than the cross-section of the lower portion 41. The width is small.

Referring to FIG. 9, the sealing member 40 may also be formed such that the cross-sectional width of the lower portion 41 gradually increases toward the lower direction. In this case, the sealing member 40 can be forcibly inserted into the housing recess 23. This can suppress or prevent the sealing member 40 from coming off the housing recess 23 due to the collision generated during the processing of the substrate 1.

Referring to FIG. 10, the sealing member 40 may include an annular first sealing member 40a spaced apart from each other and an annular second sealing member 40b disposed outside the first sealing member 40a. A pair of housing recesses 23a and 23b may be formed in the bottom plate 20 to house the first sealing member 40a and the second sealing member 40b. These receiving recesses can be concentric. The cross section of the first sealing member 40a and the second sealing member 40b may be a shape such as a circular shape, an elliptical shape, or a polygonal shape. The lower portions 41a and 41b of the first sealing member 40a and the second sealing member 40b may be individually housed in the housing recess 23a And 23b, and the upper portions 42a and 42b can protrude from the housing recesses 23a and 23b. Therefore, the first sealing member 40a disposed on the inner side can support the substrate 1 through the upper portion 42a, and the second sealing member 40b can support the top plate 30 through the upper portion 42b.

Thus, as long as the cooling gas can be supplied as previously described above, the shape of the sealing member 40 can be varied depending on design or as necessary.

The top plate 30 has a circular plate shape, but the diameter and thickness of the circular plate are larger than the diameter and thickness of the bottom plate 20.

The recessed storage portion 32 is provided in the back surface of the top plate 30 to accommodate the bottom plate 20. The diameter of the housing portion 32 is larger than the diameter of the bottom plate 20. The side of the bottom plate 20 to be received and the inner wall of the receiving portion 32 are spaced apart from each other by a constant distance to form a flow path 31 as previously described above.

The flow path 31 supplies the cooling gas supplied via the substrate chuck 10a to the space between the bottom plate 20 and the top plate 30, specifically, around the lower portion of the top plate 30 to prevent the top plate 30 from being overheated by cooling the top plate 30.

Therefore, the substrate 1 and the top plate 30 can be cooled by the uniform distribution of the cooling gas, and the surface temperature of the substrate 1 can be maintained at a constant level during the plasma processing.

Moreover, holes 33 are formed in the top plate 30 to expose the top portion of the substrate 1. The periphery of the cavity 33 has a protrusion 34 that is configured to protrude toward the top portion of the substrate 1 and prevent the substrate 1 from coming off.

The mounting method according to the present invention will be described with reference to FIG.

The substrate supporting apparatus according to the present invention is coupled by holding the sealing member 40 in the housing recess 23 of the bottom plate 20; using the top plate 30 shown in FIG. The top and bottom of the upside are used to mount the substrate 1 on the cavity 33; the inverted bottom plate 20 is inserted, wherein the sealing member 40 is held such that the sealing member 40 is placed between the substrate 1 and the top plate 30; and the coupling is performed using bolts . Since the sealing member 40 is held in the housing recess 23, the position of the sealing member 40 remains unchanged during the coupling process. Therefore, coupling can be easily accomplished without significant difficulty. The bottom plate 20 is coupled to the top plate 30 with the substrate 1 mounted, and the resulting assembly is inverted and mounted on the substrate chuck 10a as shown in FIG.

In order to separate the bottom plate 20 from the substrate chuck 10a, a seal ring 50 (for example, an O-ring) is placed between the back surface of the top plate 30 and the substrate chuck 10a. This prevents the cooling gas supplied through the substrate chuck 10a from leaking to the outside, and separates the bottom plate 20 from the substrate chuck 10a to supply the cooling gas through the first supply pipe 21, the second supply pipe 22, and the flow path 31.

The top plate 30 may be formed to be the same size as the bottom plate 20, as shown in FIG. Moreover, the top plate 30 may be formed as a plate having no receiving portion. In this case, when the top plate 30, the bottom plate 20, and the substrate 1 are coupled, the top plate 30 and the bottom plate 20 are spaced apart from each other by the upper portion 42 of the sealing member 40 to form a space between the top plate 30 and the bottom plate 20. Therefore, the cooling gas supplied from the first supply pipe 21, the second supply pipe 22, and the flow path 31 can leak to the outside through the space formed between the top plate 30 and the bottom plate 20.

Therefore, in order to separate the bottom plate 20 from the substrate chuck 10a to supply the cooling gas through the first supply pipe 21, the second supply pipe 22, and the flow path 31, the seal ring 50 may be placed between the bottom plate 20 and the substrate chuck 10a. At the same time, in order to prevent cooling gas The body leaks into the space between the top plate 30 and the bottom plate 20, and in addition, another sealing ring 60 can be placed at the periphery of the bottom plate 20 and the top plate 30.

By using this configuration, the first cooling space C1 is formed between the substrate 1 and the bottom plate 20 and communicates with the first supply pipe 21. Moreover, the second cooling space C2 is formed between the top plate 30 and the bottom plate 20 and communicates with the second supply pipe 22 and the flow path 31. The first supply pipe 21, the first cooling space C1, the second supply pipe 22, and the second cooling space C2 form a cooling path of the cooling gas supplied through the gas passage.

That is, as previously described above, the cooling gas supplied through the first supply pipe 21 is injected into the first cooling space C1 and supplied to the back surface of the substrate 1 to prevent the substrate 1 from being overheated. The cooling gas supplied through the second supply pipe 22 and the flow path 31 is injected into the second cooling space C2 and supplied to the back surface of the top plate 30 between the substrate 1 and the periphery of the back surface to prevent the top plate 30 from being overheated.

Therefore, the temperature level of the top plate 30 becomes the same as the temperature level of the substrate 1, and the processing failure caused by the temperature difference between the top plate 30 and the substrate 1 can be prevented.

The cooling gas is a heat conducting gas. When the cooling gas is supplied through the first supply pipe 21, the second supply pipe 22, and the flow path 31, the heat generated from the substrate 1 and the top plate 30 is transferred downward (ie, in a direction opposite to the direction in which the cooling gas is supplied).

The invention has been described in detail with reference to the preferred embodiments. However, the invention is not limited to the embodiments, and various modifications may be made thereto without departing from the scope of the claims, the description and the drawings. It should be understood that these modifications are within the scope of the invention.

Industrial applicability

The substrate supporting apparatus and the substrate processing apparatus according to the present invention can prevent processing failure from occurring to improve production yield. Moreover, the device can be easily manufactured to reduce production costs. Therefore, the present invention has improved industrial applicability.

2‧‧‧Substrate support equipment

20‧‧‧floor

21‧‧‧First supply tube

22‧‧‧Second supply tube

23‧‧‧ Storage recess

30‧‧‧ top board

32‧‧‧ recessed storage section

33‧‧‧ hole

34‧‧‧Protrusion

40‧‧‧ Sealing members

Claims (15)

A substrate supporting apparatus comprising: a bottom plate configured to support a substrate on the bottom plate and having a plurality of supply tubes through which cooling gas flows; a top plate configured to be removably coupled to the bottom plate, and Having a cavity to expose a top surface of the substrate supported on the bottom plate; and a sealing member configured to be coupled to the bottom plate, and between the top plate and the bottom plate and the substrate Forming a cooling space between the bottom plates, wherein the top plate surrounds a top portion and a side surface of the bottom plate, and a flow path through which the cooling gas flows is formed between a side surface of the bottom plate and a sidewall of the top plate, and The sealing member seals a gap between the substrate and the top plate. The substrate supporting apparatus according to claim 1, wherein the top plate is provided with a concave receiving portion that accommodates the bottom plate, the receiving portion has a diameter larger than a diameter of the bottom plate, and the flow A path is formed between a side surface of the bottom plate and a side wall of the housing portion to supply the cooling gas to the periphery of the back surface of the top plate through the flow path. A substrate supporting apparatus comprising: a bottom plate configured to support a substrate on the bottom plate and having a plurality of supply tubes through which cooling gas flows; a top plate configured to be removably coupled to the bottom plate, and Having a cavity to expose a top surface of the substrate supported on the bottom plate; and a sealing member configured to be coupled to the bottom plate, and between the top plate and the bottom plate and the substrate Forming a cooling space between the bottom plates, wherein the top plate covers a top portion of the bottom plate, the sealing member supports a bottom surface of the top plate and a periphery of a bottom surface of the substrate to seal the substrate and the a gap between the top plates, and the sealing member has There is a seal ring disposed between the periphery of the top plate and the periphery of the bottom plate. The substrate supporting apparatus according to any one of claims 1 to 3, wherein the cooling space includes a first cooling space formed between the substrate and the bottom plate and formed on the top plate a second cooling space with the bottom plate, and the bottom plate includes a first supply pipe for supplying the cooling gas to the first cooling space and for supplying the cooling gas to the first a second supply tube for the second cooling space. The substrate supporting apparatus according to any one of claims 1 to 3, wherein the bottom plate includes an annular receiving recess, a portion of a lower portion of the sealing member being inserted and held in the receiving recess . The substrate supporting apparatus according to claim 5, wherein the sealing member includes a lower portion inserted into the receiving recess and an upper portion protruding toward a top portion of the receiving recess, and an outer side of the upper portion The top plate is in contact with and the inner side is in contact with the substrate to prevent the cooling gas from leaking into a space between the substrate and the top plate. The substrate supporting apparatus according to claim 6, wherein the upper portion of the sealing member has a cross-sectional width greater than, equal to, or smaller than a cross-sectional width of the lower portion. The substrate supporting apparatus according to claim 6, wherein the upper portion of the sealing member has a cross-sectional shape that is a shape divided to the left and right sides and at least one of a polygonal shape, a circular shape, and an elliptical shape. . The substrate supporting apparatus according to claim 6, wherein the lower portion of the sealing member has a cross-sectional width having the same width in the up-and-down direction or a width gradually increasing downward. The substrate supporting apparatus according to any one of claims 1 to 3, wherein the sealing member is formed to correspond to a ring shape of the substrate. The substrate supporting apparatus according to any one of claims 1 to 3, wherein the sealing member includes a first sealing member that is in contact with the substrate and a second sealing member that is in contact with the top plate. A substrate processing apparatus comprising: a chamber configured to form a substrate processing space; a substrate chuck configured to be disposed in a lower portion of the chamber portion; and a substrate supporting unit disposed on the substrate chuck to Positioning a substrate therein, the substrate supporting unit having a top plate, a bottom plate, a cooling path, and a sealing member, wherein the top plate and the bottom plate are configured to be coupled to each other to insert the substrate therebetween, a cooling path Configuring to supply cooling gas to the substrate and each back surface of the top plate, the bottom plate configured to support the substrate on the bottom plate and having a plurality of supplies through which the cooling gas flows a tube configured to be removably coupled to the bottom plate and having a cavity to expose a top surface of the substrate supported on the bottom plate, the sealing member being configured to be coupled a bottom plate, and a cooling space is formed between the top plate and the bottom plate and between the substrate and the bottom plate, the top plate surrounding a top portion and a side surface of the bottom plate, Said cooling gas flows through the flow path formed between the side surface of the base plate and the side wall of the top plate, and the sealing member seals the gap between the substrate and the top plate. A substrate processing apparatus comprising: a chamber configured to form a substrate processing space; a substrate chuck configured to be disposed in a lower portion of the chamber portion; and a substrate supporting unit disposed on the substrate chuck to Positioning the substrate therein, The substrate supporting unit has a top plate, a bottom plate, a cooling path, and a sealing member, wherein the top plate and the bottom plate are configured to be coupled to each other to insert the substrate therebetween, and the cooling path is configured to cool the gas Supplying to the substrate and each back surface of the top plate, the bottom plate being configured to support the substrate on the bottom plate and having a plurality of supply tubes through which the cooling gas flows, the top plate being Disposed to be removably coupled to the base plate and having cavities to expose a top surface of the substrate supported on the base plate, the sealing member being configured to be coupled to the base plate, and Forming a cooling space between the top plate and the bottom plate and between the substrate and the bottom plate, wherein the top plate covers a top portion of the bottom plate, and the sealing member supports a bottom surface of the top plate and a bottom surface of the substrate Surrounding to seal a gap between the substrate and the top plate, and the sealing member has a sealing ring disposed between the periphery of the top plate and the periphery of the bottom plate. The substrate processing apparatus of claim 12, wherein the cooling path comprises: a first cooling path, a first supply pipe passing through the bottom plate, and a first supply pipe And forming a first cooling space between the substrate and the bottom plate; and a second cooling path provided with a second supply pipe passing through the bottom plate and connected to the second supply pipe and formed on the top plate a second cooling space between the bottom plate. The substrate processing apparatus of claim 14, wherein the first supply tube and the second supply tube are connected to a gas passage through the substrate chuck.