JP2014013882A - Substrate support apparatus and substrate processing apparatus - Google Patents

Substrate support apparatus and substrate processing apparatus Download PDF

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JP2014013882A
JP2014013882A JP2013079038A JP2013079038A JP2014013882A JP 2014013882 A JP2014013882 A JP 2014013882A JP 2013079038 A JP2013079038 A JP 2013079038A JP 2013079038 A JP2013079038 A JP 2013079038A JP 2014013882 A JP2014013882 A JP 2014013882A
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substrate
lower plate
sealing member
plate
upper plate
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JP5777656B2 (en
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Sungkon Jong
サンコン ジョン
Hyang Won Kim
ヒャンウォン キム
Yu-Sik Shin
ユシク シン
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GigaLane Co Ltd
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GigaLane Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Abstract

PROBLEM TO BE SOLVED: To provide a substrate support apparatus which supplies a heat transfer gas to multiple substrates thereby improving the heat transfer efficiency, and to provide a substrate processing apparatus.SOLUTION: A substrate support apparatus includes: a lower plate 20 where a substrate is supported on an upper part and multiple supply tubes for passing a cooling gas are formed; an upper plate 30 which is detachably provided on the lower plate 20, the upper plate 30 where a pocket 33 which exposes an upper surface of the substrate supported by the lower plate 20 is formed; and sealing members 40 which are coupled to the lower plate 20 and respectively form cooling spaces between the upper plate 30 and the lower plate 20 and between the substrate and the lower plate 20.

Description

本発明は、基板支持装置及び基板処理装置に係り、さらに詳しくは、複数枚の基板に伝熱ガスを供給して伝熱効率を高めることのできる基板支持装置及び基板処理装置に関する。   The present invention relates to a substrate support apparatus and a substrate processing apparatus, and more particularly to a substrate support apparatus and a substrate processing apparatus that can increase heat transfer efficiency by supplying a heat transfer gas to a plurality of substrates.

一般に、半導体、発光ダイオード（ＬＥＤ）、フラットパネルディスプレイ装置の製造に用いられるプラズマ処理装置は、反応チャンバー内に電界及び磁界を形成してプラズマを発生させ、そのプラズマを用いて各種の工程を行う装置である。従来のプラズマ処理装置は基板を固定する基板支持装置を有しており、特に、生産性を向上させるべく、多数枚の基板を同時に固定して処理する基板支持装置を有している。このようなプラズマ処理中に、基板支持装置に取り付けられた基板はプラズマの温度によって昇温され、それが過剰に昇温すると工程不良などが発生する虞がある。   In general, a plasma processing apparatus used for manufacturing semiconductors, light emitting diodes (LEDs), and flat panel display devices generates an electric field and a magnetic field in a reaction chamber to generate plasma, and performs various processes using the plasma. Device. A conventional plasma processing apparatus has a substrate support apparatus for fixing a substrate, and in particular, has a substrate support apparatus for fixing and processing a large number of substrates at the same time in order to improve productivity. During such plasma processing, the substrate attached to the substrate support apparatus is heated by the temperature of the plasma, and if it is excessively heated, there is a possibility that a process failure or the like may occur.

このような問題点に鑑みて、本発明の出願人が登録権者である下記の特許文献１には、流路を形成して冷却ガスを供給することにより、基板の温度を所定の範囲内に保持する基板支持装置の構造が開示されている。このとき、基板支持装置には、基板チャックの上部に位置する下板と、前記下板の上面に結合されて基板の上面を露出させ、前記下板から離れて下板を介して供給される冷却ガスが基板の底面に供給されるようにする上板と、が設けられている。   In view of such a problem, the following patent document 1 in which the applicant of the present invention is a registered right holder forms a flow path and supplies a cooling gas to keep the temperature of the substrate within a predetermined range. The structure of the substrate support device held in the box is disclosed. At this time, the substrate supporting device is coupled to the lower plate positioned above the substrate chuck and the upper surface of the lower plate to expose the upper surface of the substrate, and is supplied via the lower plate away from the lower plate. And an upper plate for supplying cooling gas to the bottom surface of the substrate.

前記上板及び下板は互いにボルトなどによって組み合わせられ、これらの間に冷却ガスの供給を制限する多数のＯリングが介装されている。多数のＯリングによって前記下板の流路を介して供給された冷却ガスが基板の背面に接するように供給可能であるが、多数のＯリングによって前記上板の下部には冷却ガスが供給できなくなり、上板の昇温を防ぐことはできなかった。このような上板の昇温は、基板の上面を露出させる上板の開口部の周りの基板温度にバラツキを生じさせる原因となり、プラズマエッチングのために基板に形成されたフォトレジストパターンの不均一な硬化や焼き付きが発生して工程不良を引き起こす虞がある。   The upper plate and the lower plate are combined with each other by bolts or the like, and a large number of O-rings that restrict the supply of cooling gas are interposed therebetween. The cooling gas supplied through the flow path of the lower plate by a large number of O-rings can be supplied so as to contact the back surface of the substrate, but the cooling gas can be supplied to the lower part of the upper plate by a large number of O-rings. The temperature of the upper plate could not be prevented. Such a temperature rise of the upper plate causes variations in the substrate temperature around the opening of the upper plate that exposes the upper surface of the substrate, and the photoresist pattern formed on the substrate for plasma etching is not uniform. There is a risk that excessive curing or seizure will occur and cause process defects.

また、多数のＯリングを用いることに起因して、下板と上板との組み合わせ時にＯリングの位置が変わる確率が高くなって組み合わせの際に細かい注意が求められ、しかも、コストが高騰するという問題点がある。   In addition, due to the use of a large number of O-rings, there is a high probability that the position of the O-ring will change when the lower plate and the upper plate are combined, and fine attention is required when combining them, and the cost increases. There is a problem.

大韓民国登録特許第１０−０７３４０１６号公報Korean Registered Patent No. 10-0734016

本発明の目的は、基板だけではなく、基板支持装置そのものの温度を所定の範囲内に保持することのできる基板支持装置及び基板処理装置を提供することである。   An object of the present invention is to provide a substrate support apparatus and a substrate processing apparatus capable of maintaining not only the substrate but also the temperature of the substrate support apparatus itself within a predetermined range.

また、本発明の他の目的は、基板支持装置を簡単に取り付けることができ、しかも、Ｏリングの数を減らしてコストを節減することのできる基板支持装置及び基板処理装置を提供することである。   Another object of the present invention is to provide a substrate support apparatus and a substrate processing apparatus that can be easily mounted with a substrate support apparatus and that can reduce the number of O-rings to reduce costs. .

本発明の実施形態に係る基板支持装置は、上部に基板が支持され、冷却ガスが通過する複数の供給管が形成された下板と、前記下板の上に脱着自在に設けられ、前記下板に支持される基板の上面を露出させるポケットが形成された上板と、前記下板に結合され、前記上板と前記下板との間及び前記基板と前記下板との間にそれぞれ冷却空間を形成する封止部材と、を備えることを特徴とする。   A substrate support apparatus according to an embodiment of the present invention includes a lower plate on which an upper substrate is supported and a plurality of supply pipes through which cooling gas passes, and a lower plate that is detachably provided on the lower plate. An upper plate formed with a pocket for exposing the upper surface of the substrate supported by the plate, and the lower plate, coupled to the lower plate, and cooled between the upper plate and the lower plate and between the substrate and the lower plate, respectively. And a sealing member that forms a space.

好ましくは、前記上板は前記下板の上部及び側面を取り囲み、前記下板の側面と前記上板の側壁との間には前記冷却ガスが通過する流路を形成し、前記封止部材は前記基板と前記上板との間を封止する。   Preferably, the upper plate surrounds an upper portion and a side surface of the lower plate, a flow path through which the cooling gas passes is formed between a side surface of the lower plate and a side wall of the upper plate, and the sealing member is The space between the substrate and the upper plate is sealed.

また、好ましくは、前記上板には前記下板が収容される凹状の収容部が設けられ、前記収容部の直径は前記下板の直径よりも大きく、前記下板の側面と前記収容部の側壁との間に前記流路を形成して、前記流路を介して前記冷却ガスが前記上板の背面の縁部に供給されるようにする。   Preferably, the upper plate is provided with a concave receiving portion for receiving the lower plate, the diameter of the receiving portion being larger than the diameter of the lower plate, and the side surface of the lower plate and the receiving portion. The flow path is formed between the side walls and the cooling gas is supplied to the edge of the back surface of the upper plate through the flow path.

さらに、好ましくは、前記上板は前記下板の上部を覆い、前記封止部材は前記基板と前記上板との間を封止し、前記基板支持装置は、前記上板の縁部と前記下板の縁部との間に配設される封止リングを備える。   Further preferably, the upper plate covers an upper portion of the lower plate, the sealing member seals between the substrate and the upper plate, and the substrate support device includes an edge portion of the upper plate and the upper plate. A sealing ring is provided between the edge of the lower plate.

さらに、好ましくは、前記冷却空間は、前記基板と前記下板との間に形成される第１冷却空間と、前記上板と前記下板との間に形成される第２冷却空間と、を備え、前記下板は、前記冷却ガスを前記第１冷却空間に供給する第１供給管と、前記冷却ガスを前記第２冷却空間に供給する第２供給管と、を備える。   Further preferably, the cooling space includes a first cooling space formed between the substrate and the lower plate, and a second cooling space formed between the upper plate and the lower plate. The lower plate includes a first supply pipe that supplies the cooling gas to the first cooling space, and a second supply pipe that supplies the cooling gas to the second cooling space.

さらに、好ましくは、前記下板は、前記封止部材の下部の一部が嵌着されるリング状の収容溝を備える。   Further preferably, the lower plate includes a ring-shaped accommodation groove into which a part of the lower portion of the sealing member is fitted.

さらに、好ましくは、前記封止部材は、前記収容溝に嵌入する下部と、前記収容溝の上部側に突出する上部と、を備え、前記上部の外側が前記上板に接し、内側が前記基板に接して、前記冷却ガスが前記基板と前記上板との間の空間に流出されることを防ぐ。   Further preferably, the sealing member includes a lower portion that fits into the receiving groove, and an upper portion that protrudes to the upper side of the receiving groove, the outer side of the upper portion being in contact with the upper plate, and the inner side being the substrate. The cooling gas is prevented from flowing into the space between the substrate and the upper plate.

さらに、好ましくは、前記封止部材の前記上部の断面幅は、前記下部の断面幅よりも大きいか、等しいか、あるいは小さい。   Further preferably, the cross-sectional width of the upper portion of the sealing member is greater than, equal to, or smaller than the cross-sectional width of the lower portion.

さらに、好ましくは、前記封止部材の前記上部の断面形状は、上部側が左右に分岐された形状、多角形、円形または長円形である。   Further preferably, the cross-sectional shape of the upper portion of the sealing member is a shape in which the upper side is branched to the left and right, a polygon, a circle, or an oval.

さらに、好ましくは、前記封止部材の前記下部は、上下方向に断面幅が等しいか、あるいは、下方に進むにつれて断面幅が増大する。   Further preferably, the lower portion of the sealing member has the same cross-sectional width in the vertical direction, or the cross-sectional width increases as it goes downward.

さらに、好ましくは、前記封止部材は、前記基板に接触される第１封止部材と、前記上板に接触される第２封止部材と、を備える。   Further preferably, the sealing member includes a first sealing member that contacts the substrate and a second sealing member that contacts the upper plate.

本発明に係る基板支持装置及び基板処理装置は、基板が実装される下板と基板を固定する上板との間にも冷却ガスが供給されるようにして基板の温度均一性を向上させて工程不良の発生を防ぐことにより、歩留まりを向上させることができるという効果がある。   The substrate support apparatus and the substrate processing apparatus according to the present invention improve the temperature uniformity of the substrate by supplying cooling gas between the lower plate on which the substrate is mounted and the upper plate for fixing the substrate. By preventing the occurrence of process defects, there is an effect that the yield can be improved.

また、本発明に係る基板支持装置及び基板処理装置は、Ｏリングの数を減らすと共にＯリングの位置を固定して、基板支持装置の取り付け中にＯリングの位置が変わることを防ぐことができて、組み立てを簡単に行うことができ、しかも、コストを節減することができるという効果がある。   In addition, the substrate support apparatus and the substrate processing apparatus according to the present invention can reduce the number of O-rings and fix the position of the O-ring to prevent the position of the O-ring from changing during the mounting of the substrate support apparatus. As a result, the assembly can be easily performed, and the cost can be reduced.

本発明の実施形態に係る基板処理装置の断面図である。It is sectional drawing of the substrate processing apparatus which concerns on embodiment of this invention. 本発明の実施形態に係る基板支持装置の分解斜視図である。It is a disassembled perspective view of the board | substrate support apparatus which concerns on embodiment of this invention. 図２の結合状態の断面構成図である。It is a cross-sectional block diagram of the combined state of FIG. 本発明の実施形態に係る封止部材の断面構成図である。It is a section lineblock diagram of a sealing member concerning an embodiment of the present invention. 本発明の変形例に係る封止部材の断面図である。It is sectional drawing of the sealing member which concerns on the modification of this invention. 本発明の変形例に係る封止部材の断面図である。It is sectional drawing of the sealing member which concerns on the modification of this invention. 本発明の変形例に係る封止部材の断面図である。It is sectional drawing of the sealing member which concerns on the modification of this invention. 本発明の変形例に係る封止部材の断面図である。It is sectional drawing of the sealing member which concerns on the modification of this invention. 本発明の変形例に係る封止部材の断面図である。It is sectional drawing of the sealing member which concerns on the modification of this invention. 本発明の変形例に係る封止部材の断面図である。It is sectional drawing of the sealing member which concerns on the modification of this invention. 本発明の変形例に係る基板支持装置の断面図である。It is sectional drawing of the board | substrate support apparatus which concerns on the modification of this invention.

以下、添付図面に基づき、本発明の実施形態を詳述する。しかしながら、本発明は後述する実施形態に限定されるものではなく、互いに異なる態様で実現され、単にこれらの実施形態は本発明の開示を完全たるものにし、且つ、通常の知識を有する者に発明の範疇を完全に知らせるために提供されるものである。図面は本発明の実施形態を正確に説明するために大きさが部分的に誇張されており、図中、同じ符号は同じ構成要素を示す。   Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described below, and can be realized in different ways. These embodiments merely complete the disclosure of the present invention and are invented by those having ordinary knowledge. It is provided to fully inform the category. The drawings are partially exaggerated in size to accurately describe the embodiments of the present invention, where like reference numerals indicate like elements.

以下、添付図面に基づき、本発明の実施形態に係る基板支持装置及び基板処理装置について詳述する。   Hereinafter, a substrate support device and a substrate processing apparatus according to embodiments of the present invention will be described in detail with reference to the accompanying drawings.

図１は、本発明の実施形態に係る基板処理装置の断面図であり、図２は、本発明の実施形態に係る基板支持装置の分解斜視図であり、図３は、図２の結合状態の断面構成図であり、図４から図１０は、封止部材の種々の実施形態の断面図であり、そして図１１は、本発明の変形例に係る基板支持装置の断面図である。   1 is a cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention, FIG. 2 is an exploded perspective view of a substrate support apparatus according to an embodiment of the present invention, and FIG. 3 is a combined state of FIG. FIGS. 4 to 10 are cross-sectional views of various embodiments of the sealing member, and FIG. 11 is a cross-sectional view of a substrate supporting apparatus according to a modification of the present invention.

図１を参照すると、基板処理装置、例えば、プラズマ処理装置は、反応チャンバー９と、反応チャンバー９内の上部に配設される上部電極部３と、反応チャンバー９内の下部に上部電極部３と対向して配設される下部電極部１０と、を備える。   Referring to FIG. 1, a substrate processing apparatus, for example, a plasma processing apparatus, includes a reaction chamber 9, an upper electrode portion 3 disposed in an upper portion of the reaction chamber 9, and an upper electrode portion 3 disposed in a lower portion of the reaction chamber 9. The lower electrode part 10 arrange | positioned facing.

反応チャンバー９は、プラズマ工程、例えば、エッチング工程が行われるように外部と密閉された所定の空間を提供する役割を果たす。   The reaction chamber 9 serves to provide a predetermined space sealed from the outside so that a plasma process, for example, an etching process is performed.

反応チャンバー９の下部には排気口７が接続されており、排気口７には排気装置８が接続されている。このとき、排気装置８としてはターボ分子ポンプなどの真空ポンプを用い、これは、反応チャンバー９の内部を所定の減圧雰囲気、例えば、０．１ｍＴｏｒｒ以下の所定の圧力まで真空吸入する。このとき、排気口７及び排気装置８は、反応チャンバー９の下部に加えて、反応チャンバー９の下部側面に形成されてもよい。   An exhaust port 7 is connected to the lower part of the reaction chamber 9, and an exhaust device 8 is connected to the exhaust port 7. At this time, a vacuum pump such as a turbo molecular pump is used as the exhaust device 8, which sucks the inside of the reaction chamber 9 to a predetermined reduced pressure atmosphere, for example, a predetermined pressure of 0.1 mTorr or less. At this time, the exhaust port 7 and the exhaust device 8 may be formed on the lower side surface of the reaction chamber 9 in addition to the lower portion of the reaction chamber 9.

反応チャンバー９の一方の側壁にはゲート弁（図示せず）が設けられており、ゲート弁を開いた状態で、基板１が隣り合う未図示のロードロック室との間で搬送されるようになっている。このとき、反応チャンバー９には一つのゲート弁を設けて基板１を搬入及び搬出することもできるが、基板１の搬入及び搬出をそれぞれ別々に行うように反応チャンバー９の一方の側壁及び他方の側壁にゲート弁を備えていてもよい。   A gate valve (not shown) is provided on one side wall of the reaction chamber 9 so that the substrate 1 is transported between adjacent load lock chambers (not shown) with the gate valve opened. It has become. At this time, the reaction chamber 9 may be provided with one gate valve to carry in and out the substrate 1, but one side wall and the other side of the reaction chamber 9 are separately carried in and out of the substrate 1, respectively. A gate valve may be provided on the side wall.

反応チャンバー９内の上部に配設された上部電極部３の下部には、多数の噴射孔を有し、その表面が金属、例えば、アルミニウムからなる上部電極板３ｂと、上部電極板３ｂを支持し、表面が導電性材料からなる電極支持体３ａと、が設けられている。   The lower part of the upper electrode part 3 disposed in the upper part of the reaction chamber 9 has a large number of injection holes, the surface of which supports the upper electrode plate 3b made of metal, for example, aluminum, and the upper electrode plate 3b. And an electrode support 3a whose surface is made of a conductive material.

電極支持体３ａにはガス導入口４が設けられ、ガス導入口４にはガス供給源１３が接続されている。また、ガス導入口４とガス供給源１３との間には、弁１４及びマスフローコントローラ（図示せず）がさらに配設されており、弁１４及びマスフローコントローラの制御により反応ガスが反応チャンバー９内に供給される。反応ガスとしては、フルオロカーボンガスやヒドロフルオロカーボンガスなどのハロゲン元素を含有するガスが適切に使用可能であり、これらに加えて、Ａｒ、ＣＦ３、Ｏ２などの処理ガスが使用可能である。 The electrode support 3 a is provided with a gas inlet 4, and a gas supply source 13 is connected to the gas inlet 4. Further, a valve 14 and a mass flow controller (not shown) are further disposed between the gas inlet 4 and the gas supply source 13, and the reaction gas is contained in the reaction chamber 9 by the control of the valve 14 and the mass flow controller. To be supplied. As the reaction gas, a gas containing a halogen element such as a fluorocarbon gas or a hydrofluorocarbon gas can be appropriately used. In addition to these, a processing gas such as Ar, CF 3 , or O 2 can be used.

また、上部電極部３には上部整合器（図示せず）を介して上部高周波電源１１が接続されており、上部高周波電源１１により発生された高周波電力は上部電極部３に取り込まれた反応ガスを励起させてプラズマを形成する。   An upper high frequency power supply 11 is connected to the upper electrode section 3 via an upper matching unit (not shown), and the high frequency power generated by the upper high frequency power supply 11 is a reaction gas taken into the upper electrode section 3. Is excited to form plasma.

反応チャンバー９の下部には上部電極部３と対向する下部電極部１０が配設され、この下部電極部１０は、基板昇降器１０ｃと、基板昇降器１０ｃの上部に配設された下部電極１０ｂ及び基板チャック１０ａを備える。   A lower electrode portion 10 facing the upper electrode portion 3 is disposed below the reaction chamber 9, and the lower electrode portion 10 includes a substrate elevator 10c and a lower electrode 10b disposed above the substrate elevator 10c. And a substrate chuck 10a.

基板昇降器１０ｃは絶縁体から構成され、基板昇降器１０ｃの下部は反応チャンバー９の底面に設けられ、基板昇降器１０ｃの上部には下部電極１０ｂ及び基板チャック１０ａが取り付けられて下部電極及び基板チャック１０ａを下部から支持し、基板１を上下動させる役割を果たす。   The substrate elevator 10c is made of an insulator, the lower portion of the substrate elevator 10c is provided on the bottom surface of the reaction chamber 9, and the lower electrode 10b and the substrate chuck 10a are attached to the upper portion of the substrate elevator 10c, so that the lower electrode and the substrate are mounted. The chuck 10a is supported from below and serves to move the substrate 1 up and down.

下部電極部１０にはチラー（図示せず）が接続されており、チラーに接続される冷媒導入管（図示せず）及び冷媒排出管（図示せず）が下部電極部１０に形成される。このため、チラーから供給された冷媒は冷媒導入管を介して冷媒排出管に排出されて循環することにより、その冷熱が基板チャック１０ａを介して基板１に伝えられる。基板チャック１０ａとしては静電チャックまたは機械チャックが使用可能であり、静電チャックを基板チャック１０ａとして用いるときに、基板支持装置に静電力を発生させるために、基板支持装置２をセラミック材質から形成してもよい。このとき、基板支持装置２は、静電力を発生させて静電力を印加し得る程度の厚さに製造することが好ましい。   A chiller (not shown) is connected to the lower electrode part 10, and a refrigerant introduction pipe (not shown) and a refrigerant discharge pipe (not shown) connected to the chiller are formed in the lower electrode part 10. For this reason, the refrigerant supplied from the chiller is discharged to the refrigerant discharge pipe through the refrigerant introduction pipe and circulates, whereby the cold heat is transmitted to the substrate 1 through the substrate chuck 10a. An electrostatic chuck or a mechanical chuck can be used as the substrate chuck 10a. When the electrostatic chuck is used as the substrate chuck 10a, the substrate support device 2 is formed from a ceramic material in order to generate an electrostatic force in the substrate support device. May be. At this time, it is preferable that the substrate support device 2 is manufactured to a thickness that can generate an electrostatic force and apply the electrostatic force.

もし、基板支持装置２が厚過ぎると、基板１に静電力が働かないため基板１を固定することができず、静電力を強めるために直流電圧を増大させると、反応チャンバー９の内部の絶縁力の弱い部品の絶縁破壊を引き起こして反応チャンバー９の内部が損傷されてしまうという問題点がある。   If the substrate support device 2 is too thick, the electrostatic force does not act on the substrate 1 so that the substrate 1 cannot be fixed. If the DC voltage is increased to increase the electrostatic force, the insulation inside the reaction chamber 9 is insulated. There is a problem that the inside of the reaction chamber 9 is damaged by causing dielectric breakdown of a weak component.

下部電極部１０、すなわち、下部電極１０ｂには、下部整合器（図示せず）を介して下部高周波電源１２が接続されており、基板１をプラズマ処理する場合に、下部高周波電源１２によって高周波電力が下部電極部１０に供給される。このとき、下部に印加される高周波電力によって上部電極部３と下部電極部１０との間に形成されたプラズマ中のイオンを下部電極部１０に引っ張り、これによって基板処理が行われる。   A lower high-frequency power source 12 is connected to the lower electrode portion 10, that is, the lower electrode 10b via a lower matching unit (not shown). When the substrate 1 is subjected to plasma processing, a high-frequency power is supplied from the lower high-frequency power source 12. Is supplied to the lower electrode unit 10. At this time, ions in the plasma formed between the upper electrode portion 3 and the lower electrode portion 10 are pulled to the lower electrode portion 10 by the high-frequency power applied to the lower portion, whereby the substrate processing is performed.

下部電極１０ｂ及び基板チャック１０ａの外周面には、環状のフォーカスリングが設けられていてもよい。フォーカスリングは、シリコンなどの導電性材料からなり、プラズマ中のイオンを基板１に向かって集中させることにより、エッチングの均一性を向上させる。   An annular focus ring may be provided on the outer peripheral surfaces of the lower electrode 10b and the substrate chuck 10a. The focus ring is made of a conductive material such as silicon, and improves the uniformity of etching by concentrating ions in the plasma toward the substrate 1.

下部電極部１０には、下部電極部１０の内部を貫通するガス通路５が形成されており、ガス通路５は、冷却ガスを貯留する冷却ガス供給源６と接続されている。ガス通路５を介してヘリウムガスなどが基板支持装置２を介して基板１の下部に供給される。上記の伝熱ガスは、基板１に発生される熱を効率よく冷却することができる。   A gas passage 5 penetrating the inside of the lower electrode portion 10 is formed in the lower electrode portion 10, and the gas passage 5 is connected to a cooling gas supply source 6 that stores a cooling gas. Helium gas or the like is supplied to the lower portion of the substrate 1 via the substrate support device 2 via the gas passage 5. The heat transfer gas can efficiently cool the heat generated in the substrate 1.

図中、下部電極部１０に単一のガス通路５が形成されている場合が例示されているが、本発明はこれに何ら制限されるものではなく、ガス通路５を複数形成してもよい。   In the drawing, the case where a single gas passage 5 is formed in the lower electrode portion 10 is illustrated, but the present invention is not limited to this, and a plurality of gas passages 5 may be formed. .

一方、基板チャック１０ａの上部には、複数枚の基板１を載置し、且つ、伝熱ガスを基板１に伝えるために基板支持装置２が設けられている。   On the other hand, on the upper part of the substrate chuck 10 a, a substrate support device 2 is provided to place a plurality of substrates 1 and to transmit a heat transfer gas to the substrate 1.

図２及び図３をそれぞれ参照すると、本発明の実施形態に係る基板支持装置２は、冷却ガスが供給される基板チャック１０ａの上部に配設され、垂直に基板チャック１０ａを介して供給された冷却ガスを上部側に伝える多数の第１供給管２１及び多数の第２供給管２２を備える下板２０と、前記下板２０が底面に収容されるが、その下板２０の側面から離れて流路３１を形成する上板３０と、前記下板２０に設けられた収容溝２３に固定されて前記基板１の底面縁部を支持すると共に、基板１と上板３０との間に冷却ガスが流出されることを遮断する封止部材４０と、を備えてなる。換言すると、基板支持装置２は、下板２０と、上板３０及び封止部材４０が組み合わせられて一つのユニットをなすように形成される。   Referring to FIG. 2 and FIG. 3 respectively, the substrate support apparatus 2 according to the embodiment of the present invention is disposed on the upper part of the substrate chuck 10a to which the cooling gas is supplied, and is supplied vertically through the substrate chuck 10a. The lower plate 20 including a plurality of first supply pipes 21 and a plurality of second supply pipes 22 that transmit the cooling gas to the upper side, and the lower plate 20 are accommodated in the bottom surface, but apart from the side surface of the lower plate 20 The upper plate 30 forming the flow path 31 and the receiving groove 23 provided in the lower plate 20 are fixed to support the bottom edge of the substrate 1, and the cooling gas is interposed between the substrate 1 and the upper plate 30. And a sealing member 40 that blocks outflow of water. In other words, the substrate support device 2 is formed so that the lower plate 20, the upper plate 30, and the sealing member 40 are combined to form one unit.

以下、このような構成を有する本発明の好適な実施形態に係る基板処理装置の構成及び作用について詳述する。   Hereinafter, the configuration and operation of the substrate processing apparatus according to the preferred embodiment of the present invention having such a configuration will be described in detail.

先ず、下板２０は円板状を呈し、この下板には、多数の第１供給管２１及び第２供給管２２が上下に貫設されている。前記多数の第１供給管２１は基板１の中央下部側に配設され、第２供給管２２は前記基板１の間の境界領域の上板３０の下に配設される。   First, the lower plate 20 has a disk shape, and a number of first supply pipes 21 and second supply pipes 22 are vertically penetrated through the lower plate. The plurality of first supply pipes 21 are disposed at the center lower side of the substrate 1, and the second supply pipes 22 are disposed below the upper plate 30 in the boundary region between the substrates 1.

すなわち、第１供給管２１は、基板チャック１０ａを介して供給される冷却ガスを基板１の底面に直接的に供給して基板１がプラズマ処理されるときに過熱されることを防ぐためのものであり、第２供給管２２は、前記基板チャック１０ａを介して供給される冷却ガスを上板３０の下面に直接的に供給してその上板３０が過熱されることを防ぐためのものである。   In other words, the first supply pipe 21 is for directly supplying the cooling gas supplied via the substrate chuck 10a to the bottom surface of the substrate 1 to prevent the substrate 1 from being overheated when being subjected to plasma processing. The second supply pipe 22 is for directly supplying the cooling gas supplied through the substrate chuck 10a to the lower surface of the upper plate 30 to prevent the upper plate 30 from being overheated. is there.

前記図３の断面図には前記第２供給管２２が単数設けられる場合が例示されているが、図２から明らかなように、第２供給管２２は、取り付けられる前記基板１の間の領域に少なくとも１以上形成されてもよい。   The cross-sectional view of FIG. 3 illustrates the case where a single second supply pipe 22 is provided. As is apparent from FIG. 2, the second supply pipe 22 is a region between the substrates 1 to which the second supply pipe 22 is attached. At least one or more may be formed.

前記下板２０には、リング状の封止部材４０が嵌着される収容溝２３が設けられている。収容溝２３は、載置される基板１の縁部の側面部分がその収容溝２３の中央に位置する程度の大きさであればよい。   The lower plate 20 is provided with a receiving groove 23 into which a ring-shaped sealing member 40 is fitted. The accommodation groove 23 only needs to have a size such that the side surface portion of the edge of the substrate 1 to be placed is located at the center of the accommodation groove 23.

前記下板２０には、基板１の取付数に見合う分だけの収容溝２３が設けられている。   The lower plate 20 is provided with housing grooves 23 corresponding to the number of substrates 1 attached.

図４は、本発明の実施形態に係る封止部材４０の断面図である。   FIG. 4 is a cross-sectional view of the sealing member 40 according to the embodiment of the present invention.

図４を参照すると、前記収容溝２３に嵌着される封止部材４０は、下部４１の一部が収容溝２３に完全に収容されて固定され、その収容溝２３の外側に突出する上部４２は、収容溝２３の断面中央を基準として左右側に分岐されて幅が増大する形状であってもよい。   Referring to FIG. 4, the sealing member 40 fitted into the receiving groove 23 is fixed with a part of the lower portion 41 completely received in the receiving groove 23, and protrudes outside the receiving groove 23. The shape may be branched to the left and right sides with the center of the cross section of the housing groove 23 as a reference and the width increases.

このような形状は、リング状に形成される前記封止部材４０の上部４２の外側（リングの外側）は後述する上板３０の底面を支持して封止する役割を果たし、封止部材４０の上部４２の内側は基板１の底面の縁部を支持する役割を果たすようにする。これにより、前記封止部材４０は、基板１と上板３０との間の空間に冷却ガスが流出されることを防ぐことができる。   In such a shape, the outer side (outside of the ring) of the upper part 42 of the sealing member 40 formed in a ring shape serves to support and seal the bottom surface of the upper plate 30 described later. The inside of the upper part 42 of the substrate serves to support the edge of the bottom surface of the substrate 1. Thereby, the sealing member 40 can prevent the cooling gas from flowing into the space between the substrate 1 and the upper plate 30.

図５から図１０は、それぞれ本発明の実施形態に係る封止部材４０の断面図である。   5 to 10 are cross-sectional views of the sealing member 40 according to the embodiment of the present invention.

先ず、図５及び図６をそれぞれ参照すると、前記封止部材４０は、収容溝２３に嵌入する下部４１と、前記収容溝２３の上部側に露出されて基板１及びその基板１の周りの上板３０の縁部を支持する上部４２と、を備え、該上部は、断面を矩形にし、その上部４２の幅を下部４１の幅よりも大きくしてもよく、断面を円形にし、その円の直径を下部４１の幅よりも大きくしてもよい。   First, referring to FIG. 5 and FIG. 6, the sealing member 40 is exposed to the lower part 41 fitted into the receiving groove 23 and the upper side of the receiving groove 23, so that the substrate 1 and the upper part around the substrate 1 are exposed. An upper portion 42 that supports the edge of the plate 30, the upper portion may have a rectangular cross section, the width of the upper portion 42 may be greater than the width of the lower portion 41, the circular cross section, The diameter may be larger than the width of the lower portion 41.

このように本発明の封止部材４０は様々な形状に変形可能であり、封止部材４０の断面幅が前記基板１と上板３０との間の隙間よりも広いところに特徴がある。   Thus, the sealing member 40 of the present invention can be deformed into various shapes, and is characterized in that the cross-sectional width of the sealing member 40 is wider than the gap between the substrate 1 and the upper plate 30.

図７及び図８をそれぞれ参照すると、図５及び図６に示す封止部材４０とは異なり、上部４２及び下部４１の断面幅を等しくしてもよく、上部４２の断面幅を下部４１の断面幅よりも狭くしてもよい。   7 and 8, respectively, unlike the sealing member 40 shown in FIGS. 5 and 6, the cross-sectional widths of the upper part 42 and the lower part 41 may be made equal. It may be narrower than the width.

また、図９を参照すると、封止部材４０は、下部４１の断面幅が下方に進むにつれて増大するように形成されてもよい。この場合、封止部材４０は収容溝２３に押し込まれてもよく、基板１を処理する間に発生する衝撃などによって封止部材４０が収容溝２３から外れることを抑制または防止することができる。   Referring to FIG. 9, the sealing member 40 may be formed so that the cross-sectional width of the lower portion 41 increases as it goes downward. In this case, the sealing member 40 may be pushed into the accommodation groove 23, and it is possible to suppress or prevent the sealing member 40 from being detached from the accommodation groove 23 due to an impact generated while processing the substrate 1.

図１０を参照すると、封止部材４０は、リング状の第１封止部材４０ａと、第１封止部材４０ａの外側に隔設されるリング状の第２封止部材４０ｂと、を備えていてもよい。このとき、下板２０には、第１封止部材４０ａ及び第２封止部材４０ｂを収容するための一対の収容溝２３ａ、２３ｂが同心をなして形成されてもよい。第１封止部材４０ａ及び第２封止部材４０ｂの断面形状は、円形、長円形または多角形であってもよく、第１及び第２封止部材４０ａ、４０ｂのそれぞれの下部４１ａ、４１ｂは収容溝２３ａ、２３ｂに収容され、上部４２ａ、４２ｂは収容溝２３ａ、２３ｂから突設されてもよい。このような構成により、内側に配設される第１封止部材４０ａは上部４２ａを介して基板１を支持することができ、第２封止部材４０ｂは上部４２ｂを介して上板３０を支持することができる。   Referring to FIG. 10, the sealing member 40 includes a ring-shaped first sealing member 40a and a ring-shaped second sealing member 40b provided outside the first sealing member 40a. May be. At this time, the lower plate 20 may be formed with a pair of receiving grooves 23a and 23b concentrically for receiving the first sealing member 40a and the second sealing member 40b. The cross-sectional shapes of the first sealing member 40a and the second sealing member 40b may be circular, oval, or polygonal, and the lower portions 41a and 41b of the first and second sealing members 40a and 40b are respectively It is accommodated in the accommodation grooves 23a and 23b, and the upper parts 42a and 42b may protrude from the accommodation grooves 23a and 23b. With such a configuration, the first sealing member 40a disposed on the inner side can support the substrate 1 through the upper part 42a, and the second sealing member 40b supports the upper plate 30 through the upper part 42b. can do.

このように、封止部材４０の形状は必要または設計仕様に応じて変形可能であり、上述した冷却ガスが供給可能である限り、種々に変形可能である。   Thus, the shape of the sealing member 40 can be modified according to necessity or design specifications, and can be variously modified as long as the above-described cooling gas can be supplied.

前記上板３０は、円板状を呈するが、その直径が下板２０の直径よりも大きく、かつ、厚さも下板２０の厚さよりも厚いところに特徴がある。   The upper plate 30 has a disk shape, and is characterized in that the diameter is larger than the diameter of the lower plate 20 and the thickness is larger than the thickness of the lower plate 20.

前記上板３０の背面には、前記下板２０が収容可能な凹状の収容部３２が設けられており、その収容部３２の直径は下板２０の直径よりも大きく、収容される下板２０の側面及び収容部３２の内側壁面は互いに等間隔を隔てて離間されて上述した流路３１を形成する。   On the back surface of the upper plate 30, there is provided a concave accommodating portion 32 that can accommodate the lower plate 20, and the diameter of the accommodating portion 32 is larger than the diameter of the lower plate 20 and is accommodated. These side surfaces and the inner wall surface of the accommodating portion 32 are spaced apart from each other at equal intervals to form the flow path 31 described above.

前記流路３１は、基板チャック１０ａを介して供給された冷却ガスが下板２０と上板３０との間、具体的には、上板３０の縁部の下部側に供給されるようにして上板３０を冷却させて過熱を防ぐ。   The flow path 31 is configured so that the cooling gas supplied through the substrate chuck 10 a is supplied between the lower plate 20 and the upper plate 30, specifically, to the lower side of the edge portion of the upper plate 30. The upper plate 30 is cooled to prevent overheating.

このため、基板１だけではなく、上板３０をも均一に冷却可能になり、プラズマ処理中に基板１の表面温度を所定のレベルに維持することが可能になる。   Therefore, not only the substrate 1 but also the upper plate 30 can be uniformly cooled, and the surface temperature of the substrate 1 can be maintained at a predetermined level during the plasma processing.

また、前記上板３０には、基板１の上部を露出させるポケット３３が形成されており、そのポケット３３の縁部には、基板１の上部側に突出して基板１が離脱することを防ぐ突出部３４が設けられている。   Further, the upper plate 30 is formed with a pocket 33 that exposes the upper portion of the substrate 1, and the edge of the pocket 33 protrudes toward the upper side of the substrate 1 to prevent the substrate 1 from being detached. A portion 34 is provided.

本発明の基板支持装置の取り付け状態は、図３により確認可能である。本発明に係る基板支持装置の取り付けは、下板２０の収容溝２３に封止部材４０を固定して準備し、前記上板３０を、図３の状態から上下にひっくり返した状態で基板１をポケット３３に実装し、前記準備された下板２０の組合体をひっくり返して前記基板１と上板３０との間に前記封止部材４０が位置するように嵌入し、ボルトを締め付けることにより行われる。このとき、前記封止部材４０は収容溝２３に固定された状態であるため、取り付け中にその位置が変わることが防がれ、作業者は別途の注意を払うことなく取り付けを簡単に行うことができる。   The attachment state of the substrate support apparatus of this invention can be confirmed with FIG. The substrate support device according to the present invention is prepared by fixing the sealing member 40 in the receiving groove 23 of the lower plate 20 and preparing the substrate 1 with the upper plate 30 turned upside down from the state of FIG. Is mounted in the pocket 33, the prepared assembly of the lower plate 20 is turned upside down so that the sealing member 40 is positioned between the substrate 1 and the upper plate 30, and a bolt is tightened. Done. At this time, since the sealing member 40 is fixed to the receiving groove 23, the position of the sealing member 40 is prevented from changing during the mounting, and the operator can easily perform the mounting without paying extra attention. Can do.

このように上板３０及び下板２０を基板１が取り付けられた状態で組み合わせ、再び図３の状態にひっくり返して基板チャック１０ａの上部に実装する。   In this way, the upper plate 30 and the lower plate 20 are combined with the substrate 1 attached, and again turned over to the state of FIG. 3 and mounted on the upper portion of the substrate chuck 10a.

このとき、前記下板２０と基板チャック１０ａとを離間させるために、前記上板３０の縁部の背面と基板チャック１０ａとの間には封止リング５０、例えば、Ｏリングが配設されて前記基板チャック１０ａを介して供給された冷却ガスが外部に流出されることを防ぎながら、下板２０と基板チャック１０ａとを離間させて冷却ガスが第１供給管２１、第２供給管２２及び流路３１を介して供給されるようにする。   At this time, in order to separate the lower plate 20 and the substrate chuck 10a, a sealing ring 50, for example, an O-ring is provided between the back surface of the edge of the upper plate 30 and the substrate chuck 10a. While preventing the cooling gas supplied through the substrate chuck 10a from flowing out to the outside, the lower plate 20 and the substrate chuck 10a are separated and the cooling gas is supplied to the first supply pipe 21, the second supply pipe 22, and the like. It is made to supply via the flow path 31.

一方、上板３０は、図１１に示すように、下板２０と同じサイズに形成されてもよい。このとき、上板３０は、収容部が形成されていない板状に形成されてもよい。この場合、上板３０、下板２０及び基板１を組み合わせたときに封止部材４０の上部４２によって上板３０と下板２０とが離間して上板と下板との間に空間が形成される虞がある。これにより、第１供給管２１と、第２供給管２２及び流路３１に供給される冷却ガスが上板と下板との間に形成される空間を介して外部に流出する虞がある。   On the other hand, the upper plate 30 may be formed in the same size as the lower plate 20, as shown in FIG. At this time, the upper plate 30 may be formed in a plate shape in which the accommodating portion is not formed. In this case, when the upper plate 30, the lower plate 20 and the substrate 1 are combined, the upper plate 30 and the lower plate 20 are separated by the upper portion 42 of the sealing member 40 to form a space between the upper plate and the lower plate. There is a risk of being. Thereby, the cooling gas supplied to the 1st supply pipe 21, the 2nd supply pipe 22, and the flow path 31 may flow out outside through the space formed between the upper plate and the lower plate.

このため、下板２０と基板チャック１０ａとを離間させて冷却ガスが第１供給管２１と、第２供給管２２及び流路３１に供給されるように下板２０と基板チャック１０ａとの間に封止リング５０を配設すると共に、上板３０と下板２０との間に冷却ガスが流出されることを防ぐために下板２０及び上板３０の縁部にも別の封止リング６０をさらに配設してもよい。   Therefore, the lower plate 20 and the substrate chuck 10a are separated from each other so that the cooling gas is supplied to the first supply pipe 21, the second supply pipe 22, and the flow path 31. In order to prevent the cooling gas from flowing out between the upper plate 30 and the lower plate 20, another sealing ring 60 is also provided at the edge of the lower plate 20 and the upper plate 30. May be further arranged.

このような構成により、基板１と下板２０との間には第１供給管２１と連通される第１冷却空間Ｃ１が形成され、上板３０と下板２０との間には第２供給管２２及び流路３１と連通される第２冷却空間Ｃ２が形成される。第１供給管２１と、第１冷却空間Ｃ１と、第２供給管２２及び第２冷却空間Ｃ２は、ガス通路を介して供給される冷却ガスの冷却経路を形成する。   With such a configuration, a first cooling space C <b> 1 communicating with the first supply pipe 21 is formed between the substrate 1 and the lower plate 20, and a second supply is provided between the upper plate 30 and the lower plate 20. A second cooling space C2 communicating with the pipe 22 and the flow path 31 is formed. The first supply pipe 21, the first cooling space C1, the second supply pipe 22, and the second cooling space C2 form a cooling path for the cooling gas supplied through the gas passage.

すなわち、上述したように、第１供給管２１を介して供給される冷却ガスは第１冷却空間Ｃ１に流入して基板１の背面に供給されて基板１の過熱を防ぎ、第２供給管２２及び流路３１を介して供給される冷却ガスは第２冷却空間Ｃ２に流入して基板１の間の上板３０の背面及び上板３０の背面の縁部に供給されて上板３０が過熱されることを防ぐ。   That is, as described above, the cooling gas supplied through the first supply pipe 21 flows into the first cooling space C1 and is supplied to the back surface of the substrate 1 to prevent the substrate 1 from being overheated. The cooling gas supplied through the flow path 31 flows into the second cooling space C2 and is supplied to the back surface of the upper plate 30 and the edge of the back surface of the upper plate 30 between the substrates 1, and the upper plate 30 is overheated. To prevent it.

このため、上板３０は基板１と略等温になり、上板３０と基板１との間の温度差による工程不良の発生を防ぐことが可能になる。   For this reason, the upper plate 30 becomes substantially isothermal with the substrate 1, and it becomes possible to prevent the occurrence of a process failure due to a temperature difference between the upper plate 30 and the substrate 1.

前記冷却ガスは熱を伝える伝熱ガスであり、前記第１供給管２１と、第２供給管２２及び流路３１を介して供給された状態で前記基板１及び上板３０の熱はその冷却ガスの供給方向とは逆方向である下向きに熱が伝えられる。   The cooling gas is a heat transfer gas that transfers heat, and the heat of the substrate 1 and the upper plate 30 is cooled in a state of being supplied through the first supply pipe 21, the second supply pipe 22, and the flow path 31. Heat is transferred downward, which is the opposite direction to the gas supply direction.

以上、本発明について好適な実施形態を挙げて詳述したが、本発明は上述した実施形態に何ら限定されるものではなく、特許請求の範囲と、発明の詳細な説明及び添付図面の範囲内において種々に変形して実施することが可能であり、これらもまた本発明に属する。   The present invention has been described in detail with reference to preferred embodiments. However, the present invention is not limited to the above-described embodiments, and is within the scope of the claims, the detailed description of the invention, and the accompanying drawings. The present invention can be implemented with various modifications, and these also belong to the present invention.

本発明に係る基板支持装置及び基板処理装置は、工程不良の発生を防ぐことにより歩留まりを向上させることができ、組み立てが容易である他、コストを節減することができるという効果を有する。したがって、本発明は、産業上の利用可能性が向上される。   The substrate support apparatus and the substrate processing apparatus according to the present invention can improve the yield by preventing the occurrence of process defects, and have the effects that the assembly is easy and the cost can be reduced. Therefore, the industrial applicability of the present invention is improved.

Claims (11)

上部に基板が支持され、冷却ガスが通過する複数の供給管が形成された下板と、
前記下板の上に脱着自在に設けられ、前記下板に支持される基板の上面を露出させるポケットが形成された上板と、
前記下板に結合され、前記上板と前記下板との間及び前記基板と前記下板との間にそれぞれ冷却空間を形成する封止部材と、
を備えることを特徴とする基板支持装置。 A lower plate on which a substrate is supported and a plurality of supply pipes through which cooling gas passes are formed;
An upper plate provided detachably on the lower plate and formed with a pocket exposing the upper surface of the substrate supported by the lower plate;
A sealing member that is coupled to the lower plate and forms cooling spaces between the upper plate and the lower plate and between the substrate and the lower plate;
A substrate support apparatus comprising: 前記上板は前記下板の上部及び側面を取り囲み、前記下板の側面と前記上板の側壁との間には前記冷却ガスが通過する流路を形成し、
前記封止部材は前記基板と前記上板との間を封止することを特徴とする請求項１に記載の基板支持装置。 The upper plate surrounds the upper and side surfaces of the lower plate, and forms a flow path through which the cooling gas passes between the side surface of the lower plate and the side wall of the upper plate,
The substrate support apparatus according to claim 1, wherein the sealing member seals between the substrate and the upper plate. 前記上板には前記下板が収容される凹状の収容部が設けられ、前記収容部の直径は前記下板の直径よりも大きく、前記下板の側面と前記収容部の側壁との間に前記流路を形成して、前記流路を介して前記冷却ガスが前記上板の背面の縁部に供給されるようにすることを特徴とする請求項２に記載の基板支持装置。   The upper plate is provided with a concave accommodating portion for accommodating the lower plate, the diameter of the accommodating portion being larger than the diameter of the lower plate, and between the side surface of the lower plate and the side wall of the accommodating portion. The substrate support apparatus according to claim 2, wherein the flow path is formed so that the cooling gas is supplied to an edge of the back surface of the upper plate through the flow path. 前記上板は前記下板の上部を覆い、前記封止部材は前記基板と前記上板との間を封止し、
前記上板の縁部と前記下板の縁部との間に配設される封止リングを備えることを特徴とする請求項１に記載の基板支持装置。 The upper plate covers an upper portion of the lower plate, and the sealing member seals between the substrate and the upper plate,
The substrate support apparatus according to claim 1, further comprising a sealing ring disposed between an edge portion of the upper plate and an edge portion of the lower plate. 前記冷却空間は、前記基板と前記下板との間に形成される第１冷却空間と、前記上板と前記下板との間に形成される第２冷却空間と、を備え、
前記下板は、前記冷却ガスを前記第１冷却空間に供給する第１供給管と、前記冷却ガスを前記第２冷却空間に供給する第２供給管と、を備えることを特徴とする請求項１から４のいずれか一項に記載の基板支持装置。 The cooling space includes a first cooling space formed between the substrate and the lower plate, and a second cooling space formed between the upper plate and the lower plate,
The lower plate includes a first supply pipe that supplies the cooling gas to the first cooling space, and a second supply pipe that supplies the cooling gas to the second cooling space. The substrate support apparatus according to any one of 1 to 4. 前記下板は、前記封止部材の下部の一部が嵌着されるリング状の収容溝を備えることを特徴とする請求項１から４のいずれか一項に記載の基板支持装置。   5. The substrate support apparatus according to claim 1, wherein the lower plate includes a ring-shaped accommodation groove into which a part of a lower portion of the sealing member is fitted. 前記封止部材は、前記収容溝に嵌入する下部と、前記収容溝の上部側に突出する上部と、を備え、
前記上部の外側が前記上板に接し、内側が前記基板に接して、前記冷却ガスが前記基板と前記上板との間の空間に流出されることを防ぐことを特徴とする請求項６に記載の基板支持装置。 The sealing member includes a lower part that fits into the receiving groove, and an upper part that protrudes toward the upper side of the receiving groove,
The outer side of the upper part is in contact with the upper plate, and the inner side is in contact with the substrate, so that the cooling gas is prevented from flowing into the space between the substrate and the upper plate. The substrate support apparatus according to the description. 前記封止部材の前記上部の断面幅は、前記下部の断面幅よりも大きいか、等しいか、あるいは小さいことを特徴とする請求項７に記載の基板支持装置。   The substrate support apparatus according to claim 7, wherein a cross-sectional width of the upper portion of the sealing member is greater than, equal to, or smaller than a cross-sectional width of the lower portion. 前記封止部材の前記上部の断面形状は、上部側が左右に分岐された形状、多角形、円形または長円形であることを特徴とする請求項７に記載の基板支持装置。   The substrate support apparatus according to claim 7, wherein a cross-sectional shape of the upper portion of the sealing member is a shape in which the upper side is branched to the left and right, a polygon, a circle, or an oval. 前記封止部材の前記下部は、上下方向に断面幅が等しいか、あるいは、下方に進むにつれて断面幅が増大することを特徴とする請求項７に記載の基板支持装置。   The substrate support device according to claim 7, wherein the lower portion of the sealing member has the same cross-sectional width in the vertical direction, or the cross-sectional width increases as it progresses downward. 前記封止部材は、前記基板に接触される第１封止部材と、前記上板に接触される第２封止部材と、を備えることを特徴とする請求項１から４のいずれか一項に記載の基板支持装置。   The said sealing member is provided with the 1st sealing member contacted with the said board | substrate, and the 2nd sealing member contacted with the said upper board, The any one of Claim 1 to 4 characterized by the above-mentioned. The substrate support apparatus described in 1.
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