TWI491622B - 光可固化之聚合介電質及其製備方法與用途 - Google Patents

光可固化之聚合介電質及其製備方法與用途 Download PDF

Info

Publication number
TWI491622B
TWI491622B TW098139975A TW98139975A TWI491622B TW I491622 B TWI491622 B TW I491622B TW 098139975 A TW098139975 A TW 098139975A TW 98139975 A TW98139975 A TW 98139975A TW I491622 B TWI491622 B TW I491622B
Authority
TW
Taiwan
Prior art keywords
group
alkyl
aryl
alkenyl
divalent
Prior art date
Application number
TW098139975A
Other languages
English (en)
Chinese (zh)
Other versions
TW201030028A (en
Inventor
Silke Koehler
Thomas Breiner
Jordan Quinn
He Yan
Yan Zheng
Christopher Newman
Antonio Facchetti
Original Assignee
Basf Se
Polyera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se, Polyera Corp filed Critical Basf Se
Publication of TW201030028A publication Critical patent/TW201030028A/zh
Application granted granted Critical
Publication of TWI491622B publication Critical patent/TWI491622B/zh

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/468Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/06Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F118/00Homopolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an acyloxy radical of a saturated carboxylic acid, of carbonic acid or of a haloformic acid
    • C08F118/02Esters of monocarboxylic acids
    • C08F118/12Esters of monocarboxylic acids with unsaturated alcohols containing three or more carbon atoms
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F12/00Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F12/02Monomers containing only one unsaturated aliphatic radical
    • C08F12/04Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F12/14Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing heteroatoms
    • C08F12/22Oxygen
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02Monomers containing only one unsaturated aliphatic radical
    • C08F212/04Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/22Oxygen
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02Monomers containing only one unsaturated aliphatic radical
    • C08F212/32Monomers containing only one unsaturated aliphatic radical containing two or more rings
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F216/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical
    • C08F216/02Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical by an alcohol radical
    • C08F216/10Carbocyclic compounds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D125/00Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Coating compositions based on derivatives of such polymers
    • C09D125/18Homopolymers or copolymers of aromatic monomers containing elements other than carbon and hydrogen
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/44Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes vinyl resins; acrylic resins
    • H01B3/442Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes vinyl resins; acrylic resins from aromatic vinyl compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/44Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes vinyl resins; acrylic resins
    • H01B3/447Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes vinyl resins; acrylic resins from acrylic compounds
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10Organic polymers or oligomers
    • H10K85/141Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10Organic polymers or oligomers
    • H10K85/151Copolymers
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F12/00Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F12/02Monomers containing only one unsaturated aliphatic radical
    • C08F12/04Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F12/14Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing heteroatoms
    • C08F12/22Oxygen
    • C08F12/24Phenols or alcohols
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/649Aromatic compounds comprising a hetero atom
    • H10K85/657Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6574Polycyclic condensed heteroaromatic hydrocarbons comprising only oxygen in the heteroaromatic polycondensed ring system, e.g. cumarine dyes
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/31504Composite [nonstructural laminate]
    • Y10T428/31855Of addition polymer from unsaturated monomers
    • Y10T428/31938Polymer of monoethylenically unsaturated hydrocarbon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Emergency Medicine (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Plasma & Fusion (AREA)
  • Thin Film Transistor (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Electroluminescent Light Sources (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
TW098139975A 2008-11-24 2009-11-24 光可固化之聚合介電質及其製備方法與用途 TWI491622B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11740408P 2008-11-24 2008-11-24

Publications (2)

Publication Number Publication Date
TW201030028A TW201030028A (en) 2010-08-16
TWI491622B true TWI491622B (zh) 2015-07-11

Family

ID=42084518

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098139975A TWI491622B (zh) 2008-11-24 2009-11-24 光可固化之聚合介電質及其製備方法與用途

Country Status (7)

Country Link
US (2) US8937301B2 (enExample)
EP (2) EP2368281B1 (enExample)
JP (2) JP5684715B2 (enExample)
KR (2) KR101717398B1 (enExample)
CN (2) CN103560206B (enExample)
TW (1) TWI491622B (enExample)
WO (1) WO2010057984A2 (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011126076A1 (ja) * 2010-04-09 2011-10-13 大日本印刷株式会社 薄膜トランジスタ基板
KR102007652B1 (ko) 2011-03-30 2019-08-06 디아이씨 가부시끼가이샤 중합성 액정 조성물, 편광 발광성 도료, 신규 나프토락탐 유도체, 신규 쿠마린 유도체, 신규 나일레드 유도체 및 신규 안트라센 유도체
JP6161636B2 (ja) * 2012-02-07 2017-07-12 フレックステラ, インコーポレイテッドFlexterra, Inc. 光硬化性高分子材料および関連電子デバイス
US9171961B2 (en) 2012-07-11 2015-10-27 Polyera Corporation Coating materials for oxide thin film transistors
EP3382745A1 (en) * 2013-06-07 2018-10-03 FUJIFILM Corporation Composition for forming gate insulating film, organic thin film transistor, electronic paper, and display device
KR20160103083A (ko) 2013-12-24 2016-08-31 폴리에라 코퍼레이션 탈부착형 2차원 플렉서블 전자 기기용 지지 구조물
JP6034326B2 (ja) * 2014-03-26 2016-11-30 富士フイルム株式会社 半導体素子及び絶縁層形成用組成物
US10261634B2 (en) 2014-03-27 2019-04-16 Flexterra, Inc. Infrared touch system for flexible displays
WO2015183567A1 (en) 2014-05-28 2015-12-03 Polyera Corporation Low power display updates
US9606439B2 (en) 2014-07-15 2017-03-28 Eastman Kodak Company Forming conductive metal patterns using water-soluble polymers
EP3198614B1 (en) * 2014-09-25 2019-02-27 Basf Se Ether-based polymers as photo-crosslinkable dielectrics
CN107003608B (zh) 2014-10-24 2020-09-25 飞利斯有限公司 可光图案化组合物及使用其制造晶体管器件的方法
US9761817B2 (en) 2015-03-13 2017-09-12 Corning Incorporated Photo-patternable gate dielectrics for OFET
US10254795B2 (en) 2015-05-06 2019-04-09 Flexterra, Inc. Attachable, flexible display device with flexible tail
EP3133065A1 (en) * 2015-08-21 2017-02-22 Merck Patent GmbH Compounds for optically active devices
WO2017038948A1 (ja) * 2015-09-02 2017-03-09 富士フイルム株式会社 有機薄膜トランジスタ、有機薄膜トランジスタの製造方法、有機半導体組成物、有機半導体膜および有機半導体膜の製造方法
DE102015119939A1 (de) 2015-11-18 2017-05-18 ALTANA Aktiengesellschaft Vernetzbare polymere Materialien für dielektrische Schichten in elektronischen Bauteilen
CN105628262A (zh) * 2015-12-20 2016-06-01 华南理工大学 基于有机弹性体栅绝缘层的薄膜晶体管压力传感器
CN105810819B (zh) * 2016-05-04 2018-09-04 国家纳米科学中心 一种有机分子螺旋生长薄膜场效应晶体管及其制备方法和应用
JP6801374B2 (ja) * 2016-10-31 2020-12-16 東ソー株式会社 重合体、絶縁膜及びこれを含む有機電界効果トランジスタデバイス
TWI614505B (zh) * 2017-02-18 2018-02-11 以紫外光照射提高矽基表面原生氧化層品質之裝置與方法
WO2018168676A1 (ja) 2017-03-16 2018-09-20 東ソー株式会社 光架橋性重合体、絶縁膜、平坦化膜、親撥パターニング膜及びこれを含む有機電界効果トランジスタデバイス
EP3597673B1 (en) 2017-03-16 2023-06-07 Tosoh Corporation Photocrosslinkable polymer, insulating film, planarization film, lyophilic/liquid repellent patterned film, and organic field effect transistor device comprising same
CN107621751B (zh) * 2017-09-21 2021-02-09 儒芯微电子材料(上海)有限公司 含碱性香豆素结构的聚合物树脂及其光刻胶组合物
KR102540663B1 (ko) * 2021-04-29 2023-06-12 이화여자대학교 산학협력단 병솔 고분자를 포함하는 트랜지스터 게이트절연층용 고분자 박막 및 이를 포함하는 유기전계효과트랜지스터
US20240400736A1 (en) * 2021-08-30 2024-12-05 Flexterra, Inc. Colored dielectric polymer materials and devices using them
CN113793901B (zh) * 2021-09-16 2023-11-07 南京大学 一种基于聚合物掺杂n-型有机半导体的并五苯有机场效应晶体管

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1958972A1 (en) * 2007-02-16 2008-08-20 Samsung Electronics Co., Ltd. Copolymer, organic insulating layer composition, and organic insulating layer and organic thin film transistor manufactured using the same

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5560503A (en) * 1978-10-30 1980-05-07 Cosmo Co Ltd Lactone group-containing vinylphenol-type polymer and its preparation
US5773591A (en) * 1997-03-07 1998-06-30 Hoechst Celanese Corp. Process for preparing coumarin sulfonates
US5739295A (en) * 1997-03-07 1998-04-14 Hoechst Celanese Corporation Photoactive coumarin sulfonate compounds
GB9720922D0 (en) * 1997-10-02 1997-12-03 Smith & Nephew Adhesives
JP4433526B2 (ja) * 1999-10-07 2010-03-17 コニカミノルタホールディングス株式会社 液晶性高分子水系分散物の製造方法、液晶性高分子水系分散物、光学素子の製造方法及び光学素子
US6608323B2 (en) * 2000-07-24 2003-08-19 Northwestern University n-type thiophene semiconductors
US6585914B2 (en) 2000-07-24 2003-07-01 Northwestern University N-type thiophene semiconductors
JP4305637B2 (ja) * 2003-06-19 2009-07-29 信越化学工業株式会社 高分子化合物及びポジ型レジスト材料並びにこれを用いたパターン形成方法
JP2005093921A (ja) * 2003-09-19 2005-04-07 Canon Inc 電界効果型有機トランジスタおよびその製造方法
CA2554302C (en) 2004-01-26 2013-03-26 Northwestern University Perylene n-type semiconductors and related devices
JP2006024862A (ja) * 2004-07-09 2006-01-26 Nippon Hoso Kyokai <Nhk> 有機トランジスタおよび有機トランジスタの製造方法
CN101056873A (zh) * 2004-09-14 2007-10-17 西北大学 羰基官能化的噻吩化合物和相关的器件结构
JP2008516051A (ja) * 2004-10-06 2008-05-15 コーナーストーン リサーチ グループ,インコーポレーテッド 光活性化された形状記憶共重合体
US7605225B2 (en) 2006-05-11 2009-10-20 Northwestern University Silole-based polymers and semiconductor materials prepared from the same
WO2007146250A2 (en) 2006-06-12 2007-12-21 Northwestern University Naphthalene-based semiconductor materials and methods of preparing and use thereof
KR101224723B1 (ko) * 2006-09-15 2013-01-21 삼성전자주식회사 유기 절연막 조성물, 이를 이용하여 제조된 유기 절연막 및유기 박막 트랜지스터
WO2008051552A2 (en) * 2006-10-25 2008-05-02 Northwestern University Organic semiconductor materials and methods of preparing and use thereof
EP2086974B1 (en) 2006-11-17 2013-07-24 Polyera Corporation Diimide-based semiconductor materials and methods of preparing and using the same
US7892454B2 (en) * 2006-11-17 2011-02-22 Polyera Corporation Acene-based organic semiconductor materials and methods of preparing and using the same
EP2089442B1 (en) * 2006-11-28 2014-10-01 Polyera Corporation Photopolymer-based dielectric materials and methods of preparation and use thereof
US7893265B2 (en) * 2007-01-08 2011-02-22 Polyera Corporation Methods for preparing arene-BIS (dicarboximide)-based semiconducting materials and related intermediates for preparing same
US8022214B2 (en) * 2007-01-24 2011-09-20 Polyera Corporation Organic semiconductor materials and precursors thereof
JP4911469B2 (ja) * 2007-09-28 2012-04-04 富士フイルム株式会社 レジスト組成物及びこれを用いたパターン形成方法
CA2713852A1 (en) * 2008-02-05 2009-08-13 Basf Se Naphthalene-imide semiconductor polymers
EP2240970B1 (en) * 2008-02-05 2018-03-14 Basf Se Perylene semiconductors and methods of preparation and use thereof
WO2009144205A1 (en) * 2008-05-30 2009-12-03 Basf Se Rylene-based semiconductor materials and methods of preparation and use thereof
CN102083883B (zh) * 2008-07-02 2016-01-20 巴斯夫欧洲公司 基于供体/受体交替共聚物的高性能可溶液加工半导体聚合物
WO2011088343A2 (en) * 2010-01-17 2011-07-21 Polyera Corporation Dielectric materials and methods of preparation and use thereof
WO2012028244A1 (en) * 2010-09-02 2012-03-08 Merck Patent Gmbh Process for preparing an organic electronic device
US9171961B2 (en) * 2012-07-11 2015-10-27 Polyera Corporation Coating materials for oxide thin film transistors

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1958972A1 (en) * 2007-02-16 2008-08-20 Samsung Electronics Co., Ltd. Copolymer, organic insulating layer composition, and organic insulating layer and organic thin film transistor manufactured using the same

Also Published As

Publication number Publication date
JP5960202B2 (ja) 2016-08-02
EP2368281B1 (en) 2015-05-20
CN102224611A (zh) 2011-10-19
KR101712680B1 (ko) 2017-03-06
WO2010057984A2 (en) 2010-05-27
JP2014240488A (ja) 2014-12-25
KR20110106320A (ko) 2011-09-28
US20140363690A1 (en) 2014-12-11
CN102224611B (zh) 2014-01-22
JP2012510149A (ja) 2012-04-26
US20110215334A1 (en) 2011-09-08
TW201030028A (en) 2010-08-16
US8937301B2 (en) 2015-01-20
JP5684715B2 (ja) 2015-03-18
KR101717398B1 (ko) 2017-03-16
CN103560206A (zh) 2014-02-05
EP2368281A2 (en) 2011-09-28
CN103560206B (zh) 2016-09-28
KR20160005138A (ko) 2016-01-13
WO2010057984A3 (en) 2010-09-23
US9923158B2 (en) 2018-03-20
EP2660889A3 (en) 2014-11-12
EP2660889A2 (en) 2013-11-06

Similar Documents

Publication Publication Date Title
TWI491622B (zh) 光可固化之聚合介電質及其製備方法與用途
JP5148624B2 (ja) フォトポリマーベースの誘電材料ならびにその調製方法および使用方法
TWI527834B (zh) 可交聯介電質及其製備方法與用途
JP4668916B2 (ja) 有機高分子、電子デバイス、および方法
TWI611470B (zh) 用於製造具有岸堤結構之有機電子裝置之方法及岸堤結構與以其所製得之電子裝置
JP6429293B2 (ja) ポリマー有機半導体組成物
JP2010511094A5 (enExample)
CN103261250A (zh) 用于电子器件的栅绝缘层
JP2016525511A (ja) アジド系架橋剤
US9929345B1 (en) Curable polymeric materials and their use for fabricating electronic devices
CN104105726A (zh) 用于有机电子器件的平坦化层
KR102078428B1 (ko) 광경화성 중합체 재료 및 관련 전자 디바이스
JP2015528642A (ja) 有機電子デバイスにおける誘電体構造の表面改変方法
KR20100116287A (ko) 코마린을 함유한 디아민 단량체와 폴리이미드, 및 이를 절연체로 이용한 유기박막트랜지스터
CN120699237A (zh) 一种光刻稳定的聚合物半导体材料及制备方法和应用

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees