TWI491045B - 顯示裝置 - Google Patents

顯示裝置 Download PDF

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Publication number
TWI491045B
TWI491045B TW097130441A TW97130441A TWI491045B TW I491045 B TWI491045 B TW I491045B TW 097130441 A TW097130441 A TW 097130441A TW 97130441 A TW97130441 A TW 97130441A TW I491045 B TWI491045 B TW I491045B
Authority
TW
Taiwan
Prior art keywords
thin film
film transistor
film
light
microcrystalline
Prior art date
Application number
TW097130441A
Other languages
English (en)
Chinese (zh)
Other versions
TW200917492A (en
Inventor
山崎舜平
荒井康行
鈴木幸惠
黑川義元
Original Assignee
半導體能源研究所股份有限公司
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Publication date
Application filed by 半導體能源研究所股份有限公司 filed Critical 半導體能源研究所股份有限公司
Publication of TW200917492A publication Critical patent/TW200917492A/zh
Application granted granted Critical
Publication of TWI491045B publication Critical patent/TWI491045B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/427—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer having different thicknesses of the semiconductor bodies in different TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electroluminescent Light Sources (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW097130441A 2007-08-17 2008-08-08 顯示裝置 TWI491045B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007213055 2007-08-17

Publications (2)

Publication Number Publication Date
TW200917492A TW200917492A (en) 2009-04-16
TWI491045B true TWI491045B (zh) 2015-07-01

Family

ID=40362261

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097130441A TWI491045B (zh) 2007-08-17 2008-08-08 顯示裝置

Country Status (5)

Country Link
US (1) US7888681B2 (show.php)
JP (1) JP2009071284A (show.php)
KR (1) KR101576813B1 (show.php)
CN (1) CN101369587B (show.php)
TW (1) TWI491045B (show.php)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010071183A1 (en) * 2008-12-19 2010-06-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5504008B2 (ja) 2009-03-06 2014-05-28 株式会社半導体エネルギー研究所 半導体装置
KR20110008918A (ko) * 2009-07-21 2011-01-27 삼성모바일디스플레이주식회사 평판표시장치 및 그의 제조 방법
TWI830077B (zh) 2009-08-07 2024-01-21 日商半導體能源研究所股份有限公司 半導體裝置
KR101801956B1 (ko) * 2009-09-16 2017-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 이의 제조 방법
CN104733540B (zh) 2009-10-09 2019-11-12 株式会社半导体能源研究所 半导体器件
KR101291488B1 (ko) 2009-10-21 2013-07-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20120106766A (ko) 2009-11-20 2012-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
TWI507934B (zh) * 2009-11-20 2015-11-11 Semiconductor Energy Lab 顯示裝置
KR101836067B1 (ko) * 2009-12-21 2018-03-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터와 그 제작 방법
TWI535028B (zh) * 2009-12-21 2016-05-21 半導體能源研究所股份有限公司 薄膜電晶體
US8476744B2 (en) * 2009-12-28 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with channel including microcrystalline and amorphous semiconductor regions
CN101789398B (zh) * 2010-03-09 2012-08-22 友达光电股份有限公司 半导体元件的制造方法
JP5948025B2 (ja) 2010-08-06 2016-07-06 株式会社半導体エネルギー研究所 液晶表示装置
US9230826B2 (en) 2010-08-26 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Etching method using mixed gas and method for manufacturing semiconductor device
US8704230B2 (en) 2010-08-26 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8766253B2 (en) * 2010-09-10 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI534905B (zh) * 2010-12-10 2016-05-21 半導體能源研究所股份有限公司 顯示裝置及顯示裝置之製造方法
TWI627483B (zh) * 2012-11-28 2018-06-21 半導體能源研究所股份有限公司 顯示裝置及電視接收機
CN104091810A (zh) * 2014-06-30 2014-10-08 京东方科技集团股份有限公司 阵列基板及其制作方法、显示装置
KR102375685B1 (ko) 2016-02-02 2022-03-18 삼성디스플레이 주식회사 플렉서블 디스플레이 장치
KR102603300B1 (ko) * 2016-12-30 2023-11-15 엘지디스플레이 주식회사 박막 트랜지스터, 그의 제조방법, 및 그를 포함하는 유기발광 표시장치
CN107507827A (zh) * 2017-09-01 2017-12-22 武汉华星光电技术有限公司 显示面板的静电保护电路及显示面板
CN110709994A (zh) * 2017-10-20 2020-01-17 深圳市柔宇科技有限公司 光传感器和有机发光二极管显示屏
CN108598171A (zh) * 2017-12-28 2018-09-28 深圳市华星光电技术有限公司 氧化物半导体薄膜晶体管及其制造方法
KR102748791B1 (ko) 2020-04-16 2025-01-02 삼성전자주식회사 디스플레이 모듈 및 디스플레이 모듈의 구동 방법

Citations (10)

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Publication number Priority date Publication date Assignee Title
JPH04242724A (ja) * 1990-12-25 1992-08-31 Semiconductor Energy Lab Co Ltd 電気光学装置およびその作製方法
US5970325A (en) * 1996-05-28 1999-10-19 Samsung Electronics Co., Ltd. Thin-film switching device having chlorine-containing active region and methods of fabrication therefor
EP0678907B1 (en) * 1994-04-22 2002-02-27 Nec Corporation Method for fabricating reverse-staggered thin-film transistor
US20040229412A1 (en) * 1999-05-10 2004-11-18 Sigurd Wagner Inverter made of complementary p and n channel transistors using a single directly-deposited microcrystalline silicon film
US20040235224A1 (en) * 2003-05-20 2004-11-25 Han-Tu Lin Method for forming a thin film transistor of an organic light emitting display
CN1237590C (zh) * 2000-07-18 2006-01-18 皇家菲利浦电子有限公司 薄膜晶体管及其制造
TWI251349B (en) * 2004-11-22 2006-03-11 Au Optronics Corp Method of forming thin film transistor
US20060113894A1 (en) * 2004-11-26 2006-06-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device and method for manufacturing thereof, and television device
US20070045627A1 (en) * 2005-08-13 2007-03-01 Samsung Electronics Co., Ltd Thin film transistor substrate and method of manufacturing the same
US20070134856A1 (en) * 2005-12-14 2007-06-14 Jin Jang Method for fabricating reverse-staggered thin film transistor

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JPS56122123A (en) 1980-03-03 1981-09-25 Shunpei Yamazaki Semiamorphous semiconductor
JPH0637313A (ja) 1992-07-16 1994-02-10 Hitachi Ltd 薄膜半導体装置とその製造方法
JP2751145B2 (ja) * 1993-12-15 1998-05-18 株式会社三城 眼鏡形状デザイン設計システム
JP3152829B2 (ja) 1994-01-18 2001-04-03 株式会社東芝 半導体装置の製造方法
JP4388648B2 (ja) * 1999-10-29 2009-12-24 シャープ株式会社 薄膜トランジスタ、液晶表示装置、およびその製造方法
JP3986781B2 (ja) * 2001-08-28 2007-10-03 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
JP2005167051A (ja) * 2003-12-04 2005-06-23 Sony Corp 薄膜トランジスタおよび薄膜トランジスタの製造方法
JP4801407B2 (ja) * 2004-09-30 2011-10-26 株式会社半導体エネルギー研究所 表示装置の作製方法

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04242724A (ja) * 1990-12-25 1992-08-31 Semiconductor Energy Lab Co Ltd 電気光学装置およびその作製方法
EP0678907B1 (en) * 1994-04-22 2002-02-27 Nec Corporation Method for fabricating reverse-staggered thin-film transistor
US5970325A (en) * 1996-05-28 1999-10-19 Samsung Electronics Co., Ltd. Thin-film switching device having chlorine-containing active region and methods of fabrication therefor
US20040229412A1 (en) * 1999-05-10 2004-11-18 Sigurd Wagner Inverter made of complementary p and n channel transistors using a single directly-deposited microcrystalline silicon film
CN1237590C (zh) * 2000-07-18 2006-01-18 皇家菲利浦电子有限公司 薄膜晶体管及其制造
US20040235224A1 (en) * 2003-05-20 2004-11-25 Han-Tu Lin Method for forming a thin film transistor of an organic light emitting display
TWI251349B (en) * 2004-11-22 2006-03-11 Au Optronics Corp Method of forming thin film transistor
TW200618295A (en) * 2004-11-22 2006-06-01 Au Optronics Corp Method of forming thin film transistor
US20060113894A1 (en) * 2004-11-26 2006-06-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device and method for manufacturing thereof, and television device
US20070045627A1 (en) * 2005-08-13 2007-03-01 Samsung Electronics Co., Ltd Thin film transistor substrate and method of manufacturing the same
US20070134856A1 (en) * 2005-12-14 2007-06-14 Jin Jang Method for fabricating reverse-staggered thin film transistor

Also Published As

Publication number Publication date
US20090045409A1 (en) 2009-02-19
JP2009071284A (ja) 2009-04-02
US7888681B2 (en) 2011-02-15
CN101369587A (zh) 2009-02-18
KR101576813B1 (ko) 2015-12-11
KR20090018572A (ko) 2009-02-20
CN101369587B (zh) 2012-05-23
TW200917492A (en) 2009-04-16

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