TWI488338B - 發光二極體 - Google Patents

發光二極體 Download PDF

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Publication number
TWI488338B
TWI488338B TW101119360A TW101119360A TWI488338B TW I488338 B TWI488338 B TW I488338B TW 101119360 A TW101119360 A TW 101119360A TW 101119360 A TW101119360 A TW 101119360A TW I488338 B TWI488338 B TW I488338B
Authority
TW
Taiwan
Prior art keywords
semiconductor layer
layer
substrate
emitting diode
type semiconductor
Prior art date
Application number
TW101119360A
Other languages
English (en)
Chinese (zh)
Other versions
TW201248924A (en
Inventor
葉寅夫
Original Assignee
億光電子工業股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 億光電子工業股份有限公司 filed Critical 億光電子工業股份有限公司
Publication of TW201248924A publication Critical patent/TW201248924A/zh
Application granted granted Critical
Publication of TWI488338B publication Critical patent/TWI488338B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)
TW101119360A 2011-05-30 2012-05-30 發光二極體 TWI488338B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161491307P 2011-05-30 2011-05-30
US201161527586P 2011-08-25 2011-08-25

Publications (2)

Publication Number Publication Date
TW201248924A TW201248924A (en) 2012-12-01
TWI488338B true TWI488338B (zh) 2015-06-11

Family

ID=46178445

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101119360A TWI488338B (zh) 2011-05-30 2012-05-30 發光二極體

Country Status (6)

Country Link
US (1) US9171995B2 (enExample)
EP (2) EP2533313B1 (enExample)
JP (2) JP5887638B2 (enExample)
KR (2) KR101488379B1 (enExample)
CN (1) CN102810619B (enExample)
TW (1) TWI488338B (enExample)

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JP2624281B2 (ja) 1988-02-03 1997-06-25 松下電子工業株式会社 電球形蛍光灯
JP6102408B2 (ja) * 2013-03-27 2017-03-29 豊田合成株式会社 発光装置、及びその製造方法
US9577151B2 (en) * 2013-04-23 2017-02-21 Koninklijke Philips N.V. Side interconnect for light emitting device
DE102013109316A1 (de) * 2013-05-29 2014-12-04 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Mehrzahl von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
KR102075981B1 (ko) 2014-02-21 2020-02-11 삼성전자주식회사 발광다이오드 패키지의 제조방법
CN103794689A (zh) * 2014-02-25 2014-05-14 深圳市兆明芯科技控股有限公司 覆晶式led芯片的制作方法
DE102014103828A1 (de) * 2014-03-20 2015-09-24 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung von optoelektronischen Halbleiterbauelementen
KR102019914B1 (ko) * 2014-06-11 2019-11-04 엘지이노텍 주식회사 발광 소자
CN105591009A (zh) * 2014-10-24 2016-05-18 展晶科技(深圳)有限公司 发光二极管封装结构
TWI622190B (zh) * 2014-11-18 2018-04-21 錼創科技股份有限公司 發光元件
CN106887488B (zh) * 2015-12-15 2019-06-11 群创光电股份有限公司 发光二极管及使用此发光二极管所制得的显示装置
DE102017117414A1 (de) 2017-08-01 2019-02-07 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement
CN107910407A (zh) * 2017-11-10 2018-04-13 江苏新广联半导体有限公司 一种大功率倒装led芯片的制作方法
DE102018111954B4 (de) * 2018-05-17 2022-02-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung eines halbleiterbauelements mit isolierendem substrat und halbleiterbauelement mit isolierendem substrat und optoelektronische vorrichtung dieses umfassend
CN109524526B (zh) * 2018-11-19 2020-07-31 华中科技大学鄂州工业技术研究院 深紫外发光二极管芯片及其制备方法
KR102170219B1 (ko) * 2019-09-03 2020-10-26 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
TWI744194B (zh) * 2021-02-23 2021-10-21 晶呈科技股份有限公司 發光二極體封裝結構及其製作方法

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US20090057690A1 (en) * 2007-01-22 2009-03-05 Cree, Inc. Wafer level phosphor coating technique for warm light emitting diodes
US20110012164A1 (en) * 2009-07-20 2011-01-20 Yu-Sik Kim Light-emitting element and method of fabricating the same
CN101971344A (zh) * 2008-07-24 2011-02-09 奥斯兰姆奥普托半导体有限责任公司 具有静电放电保护单元的辐射发射型半导体芯片及其制造方法

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TW465123B (en) 2000-02-02 2001-11-21 Ind Tech Res Inst High power white light LED
US6611002B2 (en) * 2001-02-23 2003-08-26 Nitronex Corporation Gallium nitride material devices and methods including backside vias
JP2002368263A (ja) 2001-06-06 2002-12-20 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
JP2005079551A (ja) * 2003-09-03 2005-03-24 Toyoda Gosei Co Ltd 半導体発光素子形成用複合基板及びその製造方法、並びに半導体発光素子の製造方法。
TWI220578B (en) * 2003-09-16 2004-08-21 Opto Tech Corp Light-emitting device capable of increasing light-emitting active region
JP2005322722A (ja) * 2004-05-07 2005-11-17 Korai Kagi Kofun Yugenkoshi 発光ダイオード
TWI422044B (zh) 2005-06-30 2014-01-01 克立公司 封裝發光裝置之晶片尺度方法及經晶片尺度封裝之發光裝置
JP5073946B2 (ja) 2005-12-27 2012-11-14 新光電気工業株式会社 半導体装置および半導体装置の製造方法
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US7902564B2 (en) * 2006-12-22 2011-03-08 Koninklijke Philips Electronics N.V. Multi-grain luminescent ceramics for light emitting devices
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JP2010103186A (ja) * 2008-10-21 2010-05-06 Sony Corp 半導体発光装置の製造方法
US20100109025A1 (en) * 2008-11-05 2010-05-06 Koninklijke Philips Electronics N.V. Over the mold phosphor lens for an led
DE102009019161A1 (de) * 2009-04-28 2010-11-04 Osram Opto Semiconductors Gmbh Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode
DE102009032486A1 (de) 2009-07-09 2011-01-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
JP4454689B1 (ja) * 2009-09-10 2010-04-21 有限会社ナプラ 発光ダイオード、発光装置、照明装置、ディスプレイ及び信号灯
JP5326957B2 (ja) * 2009-09-15 2013-10-30 豊田合成株式会社 発光素子の製造方法及び発光素子
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JP4657374B1 (ja) * 2010-06-16 2011-03-23 有限会社ナプラ 発光ダイオード、発光装置、照明装置及びディスプレイ
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Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070096130A1 (en) * 2005-06-09 2007-05-03 Philips Lumileds Lighting Company, Llc LED Assembly Having Maximum Metal Support for Laser Lift-Off of Growth Substrate
US20090057690A1 (en) * 2007-01-22 2009-03-05 Cree, Inc. Wafer level phosphor coating technique for warm light emitting diodes
CN101971344A (zh) * 2008-07-24 2011-02-09 奥斯兰姆奥普托半导体有限责任公司 具有静电放电保护单元的辐射发射型半导体芯片及其制造方法
US20110012164A1 (en) * 2009-07-20 2011-01-20 Yu-Sik Kim Light-emitting element and method of fabricating the same

Also Published As

Publication number Publication date
JP2014239247A (ja) 2014-12-18
JP5887638B2 (ja) 2016-03-16
EP2533313B1 (en) 2020-03-18
EP3133651A1 (en) 2017-02-22
KR101647000B1 (ko) 2016-08-09
KR20120134020A (ko) 2012-12-11
EP2533313A3 (en) 2016-02-17
US9171995B2 (en) 2015-10-27
KR101488379B1 (ko) 2015-01-30
KR20140130661A (ko) 2014-11-11
CN102810619A (zh) 2012-12-05
JP6103601B2 (ja) 2017-03-29
CN102810619B (zh) 2015-11-18
EP2533313A2 (en) 2012-12-12
JP2012248833A (ja) 2012-12-13
US20120305967A1 (en) 2012-12-06
TW201248924A (en) 2012-12-01

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