TWI485218B - 各向異性導電膜及半導體裝置 - Google Patents

各向異性導電膜及半導體裝置 Download PDF

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Publication number
TWI485218B
TWI485218B TW101150590A TW101150590A TWI485218B TW I485218 B TWI485218 B TW I485218B TW 101150590 A TW101150590 A TW 101150590A TW 101150590 A TW101150590 A TW 101150590A TW I485218 B TWI485218 B TW I485218B
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Taiwan
Prior art keywords
epoxy resin
anisotropic conductive
conductive film
aromatic ring
polycyclic aromatic
Prior art date
Application number
TW101150590A
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English (en)
Other versions
TW201333139A (zh
Inventor
Young Woo Park
Nam Ju Kim
Kyoung Soo Park
Joon Mo Seo
Kyung Il Sul
Dong Seon Uh
Arum Yu
Hyun Min Choi
Original Assignee
Cheil Ind Inc
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Publication of TW201333139A publication Critical patent/TW201333139A/zh
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Publication of TWI485218B publication Critical patent/TWI485218B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/22—Di-epoxy compounds
    • C08G59/226—Mixtures of di-epoxy compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/22—Di-epoxy compounds
    • C08G59/24—Di-epoxy compounds carbocyclic
    • C08G59/245—Di-epoxy compounds carbocyclic aromatic
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02—Electrically-conducting adhesives
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    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
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    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00—Specific properties of additives
    • C08K2201/001—Conductive additives
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Description

各向異性導電膜及半導體裝置 發明領域
本發明係有關於一種各向異性導電膜。更特別地，本發明係有關於一種各向異性導電膜，其係包含一含多環狀芳香族環之環氧樹脂、一芴環氧樹脂，及奈米矽石，以改良初步壓製性質。
 相關技藝說明
隨著最近於顯示器裝置之大尺寸及薄的趨勢，電極間及電路間之間距已逐漸變得更細微。各向異性導電黏合膜於細微電路端子作為互連機構扮演重要角色。
各向異性導電膜係作為用於封裝LCD模組中之LCD面板、印刷電路板(PCBs)、驅動器IC電路等之連接材料。複數個驅動器IC被安裝以驅動一LCD模組內之薄膜電晶體(TFT)圖案。將驅動器IC安裝於LCD面板上之方法包括引線接合，其中，驅動器IC係經由導電線與一LCD面板電極連接，捲帶式自動接合(TAB)，其中，驅動器IC係使用一基底膜安裝於一LCD面板上之電極上，及玻璃覆晶基板 (chip-on-glass，COG)，其中，驅動器IC係經由黏合劑直接安裝於LCD面板上。各向異性導電膜已吸引作為用於COG之連接材料之更多注意，且用於使形成於一聚醯亞胺基材上之佈線圖案與於一LCD之一玻璃基材上設計之電阻件之錫錫氧化物(ITO)圖案或引線電連接。
一般，驅動器IC之數百個凸塊係不均勻地分佈。特別地，一輸入單元之凸塊尺寸係大，且一輸出單元之凸塊尺寸係小。再者，凸塊並非存在於驅動器IC之二側，且若有的話，凸塊數量係小。數百個凸塊於輸出單元係以單列、二列，或三列配置，且於一特定部份可無規地配置。因此，當壓力由上對其施加以便附接各向異性導電膜時，並未被均勻轉移至個別凸塊。
作為主要組份之含有雙酚A-型(BPA)環氧樹脂或雙酚F-型(BPF)環氧樹脂及苯氧樹脂之傳統各向異性導電膜於固化期間展現低黏度。因此，傳統各向異性導電膜對於壓製期間施加之壓力具有低耐性，過度高之樹脂溢流及低反應速度，因此，直接接收不均勻之壓力，其係於熱壓製時施加至驅動器IC。因此，個別之凸塊係以不同程度壓製，因此，造成連接電阻上差異及連接可靠度惡化。
為解決此等問題，驅動器IC之凸塊可被均勻地配置，且特別地，與連接無關之凸塊可被配置於驅動器IC之二側，以改良壓力均勻性。但是，基於最近技術發展趨勢，由於顯示產品之活性區域及死角減少，驅動器IC於厚度及 尺寸已逐漸減少。因此，需要改良黏合膜之物理性質，而非驅動器IC之凸塊陣列。
同時。與用於各向異性導電膜之組成物有關之傳統技術係如下。
韓國專利公開第2011-0019519A號案揭示一種用於各向異性導電膜之組成物，其包含一含有多環芳香族環之環氧樹脂。但是，此專利係不同於本發明，因為此專利目標在於降低環氧樹脂於高溫及高濕度時之易脆性，以確保可撓性及耐衝擊性，且除環氧樹脂外，進一步含有一以丙烯酸系橡膠為主之樹脂。
韓國專利公開第2010-0020029A號案揭示一種用於電路連接之膜型式黏合劑，其中，於固化後，此黏合劑與水具有90度或更多之接觸角，且含有作為組份之一苯氧樹脂、一環氧樹脂、一橡膠組份，及一潛固化劑。
韓國專利公開第2010-0056198A號案揭示一種用於各向異性導電膜之組成物，其含有環氧或環氧丙烷樹脂之金剛烷衍生物及一熱塑性聚合物樹脂。
此等傳統發明未揭示初步壓製性質之改良，且非有關於解決各向異性導電膜附接期間不均勻壓力轉移之問題。
 發明概要
本發明之一方面係提供一種各向異性導電膜組成物及一種各向異性導電膜，此等能於 各向異性導電膜附接時使壓力均勻地轉移至個別之凸塊，因此，改良初步壓製性質。
本發明之另一方面係提供一種各向異性導電膜組成物及一種各向異性導電膜，此等改良各向異性導電膜之初步壓製性質，以於60℃或更多之初步壓製條件下提供良好黏合性，藉此，降低氣泡產生及於接合後確保均勻凹痕。
本發明之另一方面係提供一種各向異性導電膜組成物及一種各向異性導電膜，此等於可靠度測試後展現低的連接電阻增加率，藉此，改良連接可靠度。
因為重複研究結果，本案發明人發現包含一含有多環狀芳香族環之環氧樹脂、一芴環氧樹脂及奈米矽石之一種用於各向異性導電膜之組成物滿足如上之特徵。
本發明之一方面係提供一種半導體裝置，包含作為連接材料之一種用於各向異性導電膜之組成物或含有此組成物之一種各向異性導電膜，其中，此組成物含有：一含多環狀芳香族環之環氧樹脂；及一具有50℃至80℃之沸點之芴環氧樹脂，且當含多環狀芳香族環之環氧樹脂對芴環氧樹脂之重量比率範圍從1：0.1至1：1.5時，具有高黏度及高連接可靠度。
本發明之另一方面係提供一種各向異性導電膜，其於70℃及1 MPa測量0.5秒時具有4MPa或更多之剝離強度。
 圖式簡要說明
圖1A、圖1B及圖1C個別係顯示極佳(○)、良好(△)及差(×)初步壓製性質之影像，其中，當測量三次時X之數量係0且○之數量至少係1時被判定允許初步壓製；圖2A及圖2B個別係顯示於本發明之一方面之於接合後的良好(○)凹痕性質及差(×)凹痕性質之影像；且圖3係一種用於測量剝離強度之方法。
 發明之詳細說明
於一方面，本發明係有關於一種各向異性導電膜，其包含：一含有多環狀芳香族環之環氧樹脂，其具有165℃至250℃之固化後玻璃轉移溫度(Tg)；一芴環氧樹脂，其具有50℃至80℃之沸點及1,000或更少之分子量且具有液相；及奈米矽石。
於此方面，含有多環狀芳香族環之環氧樹脂對奈米矽石之重量比率範圍可為從3：1至6：1。更佳地，重量比率範圍可為從3.5：1至6：1。於此範圍內，均勻壓力係於X、Y及Z方向施加至個別凸塊，藉此，改良各向異性導電膜之初步壓製性質。
含有多環狀芳香族環之環氧樹脂具有高反應速度，但於熱壓製時具有高黏度，維持高耐熱性，及對施加至驅動器IC之壓力梯度展現優異耐性，藉此，均勻地維持以X及Y方向施加至個別凸塊之壓力。但是，含有 多環狀芳香族環之環氧樹脂於壓力轉移之Z-方向具有過高黏度，且由於驅動器IC與面板電極間之低樹脂排除，電極間之區域會打開。當奈米規格之矽石與含有多環狀芳香族環之環氧樹脂結合使用時，Z-軸方向之樹脂排除會增加，因此，可解決X-Y-Z軸之壓力不均勻性。
當含有多環狀芳香族環之環氧樹脂及奈米矽石之量高時，玻璃之黏性不利地減少。藉由具有50℃至80℃之沸點、1,000或更少之分子量及液相之芴環氧樹脂，不具有與初步壓製有關之問題的一各向異性導電膜組成物可經由改良組成物之起始黏合性而獲得。
於此方面，含有多環狀芳香族環之環氧樹脂對芴環氧樹脂之重量比率範圍可為從1：0.1至1：1.5，較佳係從1：0.14至1：1。若芴環氧樹脂之重量比率少於0.1，包括改良起始黏合性之所欲效果不能被獲得，且若重量比率超過1.5，壓力於X-Y-Z軸會不均勻地施加，因此，使連接可靠度惡化。
於此方面，本發明之膜較佳係用於一安裝方法，諸如，COG(玻璃覆晶基板)或FOG(玻璃上膜，film on glass)。
於此方面，以此膜總重量為基準，含有多環狀芳香族環之環氧樹脂可以10重量%至50重量%之量存在。
於此方面，各向異性導電膜可作為一雙層各向異性導電膜之一ACF(各向異性導電膜)層。
於此方面，除上述組份外，依據本發明之 各向異性導電膜可進一步包含一苯氧樹脂、導電顆粒，及一固化劑。以組成物總重量為基準，苯氧樹脂可以15至25重量%之量存在，導電顆粒可以5至30重量%之量存在，且固化劑可以10至20重量%之量存在。
於此方面，經由滾球黏性測量時，依據本發明之各向異性導電膜具有高於20 gf且少於60 gf，較佳係高於20 gf且少於50 gf之起始黏合性。黏合強度係使用一探針黏性測試器依據本發明範例中描述之方法測量。
依據本發明之各向異性導電膜可包含具有50℃至80℃之沸點，1,000或更少之分子量，及於室溫係液相之一芴環氧樹脂，藉此，展現高於20 gf且少於60 gf之起始黏合強度及/或於70℃及1MPa持續0.5秒之5MPa或更多之剝離強度。
於另一方面，本發明係有關於一種各向異性導電膜，其包含：一含有多環狀芳香族環之環氧樹脂，及一具有50℃至80℃之沸點之環氧樹脂。此處，含有多環狀芳香族環之環氧樹脂對芴環氧樹脂之重量比率範圍係從1：0.1至1：1.5。
於此方面，若芴環氧樹脂之重量比率少於0.1，包含改良起始黏合性之所欲效果不能被獲得，且若重量比率超過1.5，由於X-Y-Z軸壓力不均勻施加，接合後之凹痕不均勻，因此，造成連接可靠度惡化。
更佳地，含有多環狀芳香族環之環氧樹脂對芴環氧樹脂之重量比率係1：0.14至1：1。較佳地，芴環氧樹脂 之量係少於或等於含有多環狀芳香族環之環氧樹脂之量。
於此方面，含有多環狀芳香族環之環氧樹脂具有從165℃至250℃之固化後玻璃轉移溫度(Tg)。於此範圍內，可避免熱轉移，此係於玻璃上膜(FOG)壓製時於約160℃發生且造成ACF受損及可靠度惡化，且由於低ACF初步壓製，加工缺陷不會產生。再者，含有多環狀芳香族環之環氧樹脂可具有3,000 Pa‧s至10,000 Pa‧s之於30℃至200℃之最小熔融黏度。最小熔融黏度可藉由一進階式流變膨脹系統(ARES)測量，且不限於此。例如，最小熔融黏度可使用一黏彈性計(TA Instruments,RSA III)測量。
於此方面，與僅含有一含有多環狀芳香族環之環氧樹脂之一組成物相比，含有呈1：0.1至1：1.5之重量比率之含有環狀芳香族環之環氧樹脂及芴環氧樹脂之組成物於初步壓製時增加起始黏合強度，因此，降低氣泡產生，因此，可獲得於60℃或更多之初步壓製條件下具有良好連接可靠度之一各向異性導電膜。一般，初步壓製係於儘可能低之溫度實施，因為ACF組成物於高溫初步壓製時會部份固化，於最後壓製時造成黏合強度惡化。再者，以處理控制性等而言，初步壓製係於低溫有利地實施。
依據此方面之膜特徵在於接合後之凹痕均勻，且從起始連接電阻至可靠度測試後之連接電阻之連接電阻增加係5倍或更少，較佳係4倍或更少，更佳係3.5倍或更少。
接合後之凹痕均勻性係於60℃及1 MPa初步壓製1秒及於160℃及3MPa最後壓製8秒後經由肉眼視覺觀察 而判定。特別地，如圖2A所示，當存在於一驅動器IC之二側的凹痕之清淅度實質上相似於存在於其中央的凹痕者，被判定凹痕係均勻，且如圖2B所示，當與存在於其中央之凹痕相比，存在於一驅動器IC之二側的凹痕具有低清淅度或模糊時，被判定凹痕係不均勻。
起始連接電阻係藉由於200℃及60MPa使一膜於玻璃基材(ITO玻璃)上熱壓製5秒，其後於對其施加1mA電流時使用Hioki E.E.Corp.之Hioki hi-測試器測量電阻而測量。可靠度測試後之連接電阻係以將一樣品曝露於高溫及高濕度環境(85℃/85%)及使此樣品留置500小時後之連接電阻為基準而評估。
於此方面，膜進一步包含奈米矽石。於此情況，含有多環狀芳香族環之環氧樹脂對奈米矽石之重量比率範圍可為從3：1至6：1。於此奈米矽石範圍內，膜於轉移壓力之Z-軸方向展現低黏度，因此，除去使電極間之區域打開之可能性。
於本發明，芴環氧樹脂可為於以化學式1表示之雙酚芴內含有一環氧丙基基團之一樹脂：
其中，R每一者獨立地係一烷基基團、一烷氧基基團、一芳基基團，或一環烷基基團，m每一者獨立地係從0至4 之整數，且n每一者獨立地係從2至5之整數。
於另一方面，本發明係有關於一種各向異性導電膜，其於70℃及1 MPa測量0.5秒時具有4 MPa或更多之剝離強度。於本發明，剝離強度係藉由於70℃及1 MPa之條件下使各向異性導電膜初步壓製0.5秒，且如第3圖所示般，於一LCD面板使用一剝離強度測試器Bond tester Dage 4000系列，以200 kgf之最大載重及100 um/sec之測試速度，測量此膜之相對應經壓製部分之離剝強度而測量。
各向異性導電膜較佳係具有4MPa或更多，更佳係5至20 MPa之剝離強度。於此範圍內，各向異性導電膜於最後壓製時不會被推或掉落，且能於假性壓製情況重工。
當剝離強度於此範圍內時，初步壓製之起始黏合性被確保，因此，初步壓製可於較佳係60℃或特別佳係70℃或更多之初步壓製溫度實施，且不會產生氣泡。
於此方面，各向異性導電膜可包含一含有多環狀芳香族環之環氧樹脂、一具有50℃至80℃之沸點之芴環氧樹脂，及奈米矽石。此處，含有多環狀芳香族環之環氧樹脂對芴環氧樹脂之重量比率範圍可為從1：0.1至1：1.5，且含有多環狀芳香族環之環氧樹脂對奈米矽石之重量比率範圍可為從3：1至6：1。
於此範圍內，各向異性導電膜於接合後展現均勻凹痕，且從起始連接電阻至可靠度測試後之連接電阻具有5倍或更少，較佳係4倍或更少，更佳係3.5倍或更少之連接電阻增加。
起始連接電阻係藉由於200℃及60 MPa使一各向異性導電膜於一玻璃基材(ITO玻璃)上熱壓製5秒，及於對其施加1mA之電流時，使用Hioki E.E.Corp.之一Hioki hi-測試器測量其電阻而測量。可靠度測試後之連接電阻以使一樣品曝露於高溫度及高濕度環境(85℃/85%)及使此樣品留置500小時後之連接電阻為基準而評估。
於此方面，膜係特別用於一安裝方法，諸如，玻璃覆晶基板(COG)。
其次，依據本發明之用於各向異性導電膜之組成物之固別組份將被詳細說明。
含有多環狀芳香族環之環氧樹脂
含有多環狀芳香族環之環氧樹脂可為其二或更多個芳香族環被接合或稠合且至少一個環氧官能性基團係直接或經由氧、碳或硫原子與芳香族環接合之樹脂。
含有多環狀芳香族環之環氧樹脂具有從165℃至250℃之固化後玻璃轉移溫度(Tg)。於此範圍內，可避免熱轉移，此係於玻璃上膜(FOG)壓製時於160℃發生，且造成ACF受損及可靠度惡化，且由於低ACF初步壓製，加工缺陷不會產生。
含有多環狀芳香族環之環氧樹脂可包含選自由四官能性含有芳香族環之環氧樹脂、雙官能性含有芳香族環之環氧樹脂，及此等之組合所組成組群之至少一者。較佳地，含有多環狀芳香族環之環氧樹脂可包含至少一四官能性含有芳香族環之環氧樹脂。
四官能性含有芳香族環之環氧樹脂之例子可包括含有二或更多個彼此連接結合之苯環之環氧樹脂，且不限於此。例如，二官能性含有芳香族環之環氧樹脂係自如化學式2所示般具有作為剛性結構之一萘部份之萘四官能性環氧單體固化。例如，可使用HP4700(DIC Corporation)等。
雙官能性含有芳香族環之環氧樹脂之例子可包含含有二或更多個彼此連接接合之苯環之環氧樹脂，且不限於此。例如，雙官能性含有芳香族環之環氧樹脂可自具有以化學式3表示之結構之環氧單體固化。例如，雙官能性含有芳香族環之環氧樹脂可自選自由1,6-雙(2,3-環氧丙氧基)萘、1,5-雙(2,3-環氧丙氧基)萘，及2,2'-雙(2,3-環氧丙氧基)聯萘所組成組群之環氧單體固化。
[化學式3](Ar)n -Em
其中，(Ar)n 表示其中苯環數量係n之多環狀芳香族烴，E係選自一環氧基團、一環氧丙基基團，及一環氧丙氧基基團，且m係E之數量且範圍係從1至5。
較佳地，n係2或4，且m係2。
含有多環狀芳香族環之環氧樹脂可以10至50重 量%，較佳係20至40重量%之量存在於各向異性導電膜組成物。於此範圍內，由於熱壓製時強的耐壓性，不會發生壓力不平衡，且驅動器IC與面板間之連接困難可被避免。
當作為絕緣黏合劑之含有多環狀芳香族環之環氧樹脂未被使用時，於加熱及壓製時，各向異性導電膜進行壓力不平衡及連接失效。含有多環狀芳香族環之環氧樹脂於熱壓製時具有高黏度且維持耐熱性，因此，於熱壓製時賦予對施加至驅動器IC之不均勻壓力梯度之耐性，且改良連接可靠度。
芴環氧樹脂
作為本發明之芴環氧樹脂的基本骨架之芴衍生物可藉由使用經由一芳香族重氮-鋁化合物及銅離子間之反應(Pschorr反應)或經由茚與丁二烯間之Otto Paul Hermann Diels-Kurt Alder反應產生之芳基基團製備芴，使芴於空氣中氧化製備芴酮，及於一酚化合物、一硫醇化合物(諸如，巰基羧酸)及一氫氯酸水溶液存在中使芴酮縮合而獲得。
較佳地，芴環氧樹脂可為於以化學式1表示之雙酚芴含有一環氧丙基基團之一樹脂：
其中，R每一者獨立地係一烷基基團、一烷氧基基團、一芳基基團，或一環烷基基團，m每一者獨立地係從0至4之整數，且n每一者獨立地係從2至5之整數。
較佳地，芴環氧樹脂具有50至80℃之沸點，且於室溫係液相。此處，液相意指於室溫(即，25℃)係液體。以具有於此範圍內之沸點及具有液相之芴環氧樹脂，組成物可於初步壓製溫度條件(例如，60℃或更多)下改良起始黏合性及抑制氣泡產生。
於本發明，含有多環狀芳香族環之環氧樹脂對芴環氧樹脂之重量比率範圍係從1：0.1至1：1.5，較佳係1：0.14至1：1。對芴環氧樹脂之重量比率少於0.1，包含改良起始黏合性之所欲效果不能被獲得，且若重量比率超過1.5，壓力會於X-Y-Z軸不均勻地施加，使得經固化之膜會變得過硬。
芴環氧樹脂可包含選自PG-100(BPFG，Osaka Gas Co.,Ltd.)、EG-210(BPEGF，Osaka Gas Co.,Ltd.)，及此等之組合之至少一者，且不限於此。
奈米矽石
當奈米矽石與含有多環狀芳香族環之環氧樹脂一起使用時，可避免於Z-方向之壓力不平衡及降低驅動器IC與面板電極間之樹脂排除，藉此，降低使電極間之區域打開之可能性。
較佳地，奈米矽石具有1 nm至100 nm之平均顆粒直徑(D50)及圓形形狀。
以各向異性導電膜組成物總重量為基準， 奈米矽石可以1至15重量%，較佳係1至10重量%之量存在。
再者，含有多環狀芳香族環之環氧樹脂對奈米矽石間之重量比率範圍可為從3：1至6：1。更佳地，重量比率範圍可為從3.5：1至6：1。於此範圍內，壓力於個別凸塊上於X、Y及Z方向可均勻地維持，藉此，改良各向異性導電膜之初步壓製性質。
苯氧樹脂
依據本發明之組成物可進一步包含一苯氧樹脂。
此處，“苯氧樹脂”一辭係指含有一苯氧基部份之一樹脂，且苯氧樹脂之例子包括雙酚A苯氧樹脂，且不限於此。苯氧樹脂於各向異性導電組成物中係作為基質，且可由具有低玻璃轉移溫度之一樹脂所組成。例如，苯氧樹脂可具有60℃至80℃之玻璃轉移溫度(Tg)。
以各向異性導電膜組成物總重量為基準，苯氧樹脂可以15至25重量%，較佳係15至20重量%之量存在。於此範圍內，組成物能輕易形成膜，同時確保良好可靠度。
導電顆粒
導電顆粒可為金屬顆粒，或以諸如金或銀之金屬塗覆之有機或無機顆粒。經絕緣之導電顆粒亦可被使用，以於過度使用確保絕緣性。
特別地，導電顆粒可包括：金屬顆粒，包含Ni、Pd、Cu、Ag、Al、Ti、Cr、Au等；碳；至少一選自聚乙烯、聚丙烯、聚酯、聚苯乙烯，及聚乙烯醇，及以包含金、銀、銅、鎳等之金屬塗覆之其等的經改質之樹脂顆粒之 樹脂顆粒；及藉由以經絕緣之顆粒塗覆經塗覆之顆粒而獲得之顆粒。
以應用電路之間距為基準，導電顆粒可依應用具有範圍從2 μm至50 μm之尺寸。較佳地，導電顆粒可具有範圍從2 μm至30 μm，更佳係從2 μm至6 μm之尺寸。
以各向異性導電膜組成物總重量為基準，導電顆粒可以5至30重量%，較佳係10-25重量%，更佳係15至20重量%之量存在。於此範圍內，連接可靠度係優異，且短路不會產生。
固化劑
任何固化劑可不受限地使用，只要此固化劑能固化含有多環狀芳香族環之環氧樹脂形成一各向異性導電膜。固化劑可為一潛固化劑，但不限於此。例如，固化劑可選自由咪唑類、異氰酸酯類、胺類、酚類、酸酐類，及此等之組合所組成之組群，且不限於此等。
以各向異性導電膜組成物總重量為基準，固化劑可以10至20重量%，較佳係13至20重量%之量存在。於此範圍內，可確保足夠固化及優異相容性。
依據本發明之用於各向異性導電膜之組成物進一步包含其它添加劑，諸如，聚合反應抑制劑、抗氧化劑、熱安定劑、固化加速劑，及偶合劑，以獲得另外物理性質。添加劑可以熟習此項技藝所知之量添加。
依據本發明之各向異性導電膜可藉由將含有一含有多環狀芳香族環之環氧樹脂、一芴環氧樹脂、一苯氧 樹脂、奈米矽石、一固化劑、導電顆粒及一溶劑之一各向異性導電膜組成物塗覆於一離型膜上，其後乾燥而製造。溶劑係藉由使一含有多環狀芳香族環之環氧樹脂、一苯氧樹脂、一芴環氧樹脂、奈米矽石、一固化劑，及導電顆粒均勻混合降低組成物黏度而促進此膜之產生。
其次，本發明之組成及效果將參考下列範例更詳細地解釋。但是，此等範例僅係用於例示說明目的而提供，且不應以任何方式作為限制本發明而闡釋。對熟習此項技藝者係明顯之詳細說明於此處被省略。
範例
範例1：製造各向異性導電黏合膜
(1)製造各向異性導電黏合層
35重量%之一四官能性含有多環狀芳香族環之環氧樹脂(HP4700，DIC Corp.，固化後玻璃轉移溫度：245℃)，20重量%之作為形成膜的基質之作為一結合劑樹脂之一苯氧樹脂(PKHH，Inchemrez Corp.)，5重量%之一芴環氧樹脂(產品名稱：EG200，生產公司：OSAKA GAS)，奈米矽石(R972，顆粒直徑7nm，Degussa)，15重量%之導電顆粒(AUL-704，平均顆粒直徑D50：4μm，Sekisui Chemical Co.,Ltd.)，15重量%之一固化劑(HX3941HP，Asahi Kasei Corp.)，及100重量份之作為溶劑之PGMEA被混合形成一具有8 μm厚度之各向異性導電黏合層。
(2)製造非導電性黏合層
除未使用導電顆粒外，具有10μm厚度之一非導電 性黏合層係以與(1)相同之方式形成。
(3)製造各向異性導電黏合膜
本發明之各向異性導電黏合膜可使用本發明之各向異性導電黏合組成物且未使用任何特別裝置或設備而製造。
各向異性導電黏合層及非導電黏合層係於40℃及0.2 MPa藉由層合方式而彼此黏合製造一雙層各向異性導電膜(ACF：厚度8μm，NCF：厚度10μm)，其中，各向異性導電係層合於非導電膜上。
範例2
除四官能性含有芳香族環之環氧樹脂係以30重量%之量添加且芴環氧樹脂係以10重量%之量添加外，各向異性導電黏合膜係以與範例1相同之方式製造。
範例3
除四官能性含有芳香族環之環氧樹脂係以20重量%之量添加且芴環氧樹脂係以20重量%之量添加外，各向異性導電黏合膜係以與範例1相同之方式製造。
比較例1
除四官能性含有芳香族環之環氧樹脂係以40重量%之量添加且芴環氧樹脂未被添加外，各向異性導電黏合膜係以與範例1相同之方式製造。
比較例2
除四官能性含有芳香族環之環氧樹脂係以20重量%之量添加且進一步添加20重量%之二官能性含有 芳香族環之環氧樹脂(HP4032D,DIC)外，各向異性導電黏合膜係以與比較例1相同之方式製造。
比較例3
除四官能性含有芳香族環之環氧樹脂係以15重量%之量添加且芴環氧樹脂係以25重量%之量添加外，各向異性導電黏合膜係以與範例1相同之方式製造。
比較例4
除苯氧樹脂係以25重量%之量添加，四官能性含有芳香族環之環氧樹脂係以20重量%之量添加，且未添加奈米矽石外，各向異性導電黏合膜係以與比較例3相同之方式製造。
苯氧樹脂：PKHH(Inchemrez Corp.，USA)
奈米矽石：R972，顆粒直徑7nm(Degussa)
含有多環狀芳香族環之環氧樹脂(四官能性)：HP4700(DIC Corp.)，玻璃轉移溫度：245℃
含有多環狀芳香族環之環氧樹脂(二官能性)：HP4032D(DIC Corp.)
具有芴骨架之液體環氧樹脂：產品名稱：EG200(Osaka Gas Co.,Ltd.)
導電顆粒：AUL-704(日本Sekisui Chemical Co.,Ltd.)，平均 顆粒直徑(D50)：4μm
固化劑：HX3941HP，微膠囊型式(Asahi Kasei Corp.)
溶劑：二甲苯
實驗例：測量黏合強度、初步壓製性質、接合後之凹痕均勻性、連接電阻，及剝離強度
範例及比較例製造之各向異性導電黏合膜之黏合強度、初步壓製性質、接合後之凹痕均勻性、連接電阻，及剝離強度係如下般測量：
測量物理性質之方法
(1)黏合強度(滾球黏性)
黏合強度係使用一探針黏性測量器(型號：TopTack 2000A，序號：CLTT02030305A，力準確度：0.025%，速度範圍：0.0001至15mm/秒，電力要求：220至240V(AC)，50Hz±15%，115V 60Hz)測量，且滾球黏性係依據如下之裝置設置、樣品製備及測試條件測量：
1.裝置設置：
1)荷重元、一馬達及與一裝置主體連接之一電力纜線係與一界面連接。
2)存在於此裝置主體之一電力線與一插座連接，且此裝置之後側上之一開關打開。
3)一取樣板之溫度設為30℃。
4)打開電腦，且執行一黏性程式。
5)實施此程式之起始校正。
-使用500克之砝碼實施校正。
-自動重新標度操作係於無樣品實施(起始化)
2.測量
2-1.製備樣品
1)製備欲被測量之樣品(冷凍樣品於室溫留置1小時或更久)
2)上及下荷重元以MEK(甲乙酮)清洗並且乾燥約3分鐘(注意一荷重不高於200 gf)
3)具有適當尺寸之一雙面膠帶附接至一測量裝置之一樣品檯，且樣品與其附接。
4)一ACF覆蓋膜使用一對鑷子剝離。
2-2.設定測試條件
1)壓製力：200 gf
2)分離速度：0.08 mm/秒
3)駐留時間：20秒
4)操作溫度：：30℃
5)荷重元：1.0公斤
6)探針夾具尺寸：3/8英吋
(2)初步壓製性質
為評估各向異性導電黏合膜之初步壓製性質，具有1430μm2 凸塊面積之一IC晶片(LSI部門，Samsung)及包含一5,000Å厚之氧化銦錫電路之一玻璃基材(Neoview Kolon) 被作為被黏物。
每一製備之各向異性導電黏合膜置於玻璃基材上，然後，於40℃、50℃、60℃、70℃及80℃接受於1 MPa之初步壓製1秒。初步壓製後，離型膜被移除，且端子間之氣泡產生係使用一顯微鏡(Olympus Co.,Ltd.)觀察。極佳影像(○)、良好影像(△)，及差影像(×)係依據起泡面積對被壓製部份之比率而判定。
圖1A、1B及1C個別顯示對於氣泡產生之評估為極佳(○)、良好(△)及差(×)之例子。當測量三次時X之數量係0且○之數量至少係1時被判定允許初步壓製。
(3)接合後之凹痕均勻性
初步壓製後，離型膜自黏合膜移除，且替換驅動器IC，其後，於160℃及3 MPa最後壓製8秒。凹痕均勻性係以肉眼視覺觀察而判定。特別地，如圖2A所示，當存在於驅動器IC之二側的凹痕之清淅度實質上相似於存在於其中央的凹痕者，被判定凹痕係均勻，且如圖2B所示，當與存在於其中央之凹痕相比，存在於驅動器IC之二側的凹痕具有低清淅度或模糊時，被判定凹痕係不均勻。
剝離強度
除初步壓製條件係70℃及1 MPa與0.5秒外，於藉由於(2)所述之方法初步壓製後，剝離強度係如第3圖所示般，於一LCD面板，使用一剝離強度測試器Bond tester Dage 4000系列，於200 kgf之最大載重及100 um/sec之測試速度之條件下，於一相對應經壓製部分處測量。
(5)連接電阻(起始電阻及可靠度測試後之電阻)
具有1430μm2 凸塊面積之一IC晶片(Samsung LSI)及包含一5,000Å厚之氧化銦錫電路之一玻璃基材(Neoview Kolon)被作為被黏物。每一製備膜被置於個別被黏物之間，且於200℃及60MPa熱壓製5秒產生一樣品。於施加1mA電流時，樣品之電阻係使用Hioki E.E.Corp.製造之一Hioki hi-測試器測量。使樣品曝露於高溫及高濕度(85℃/85%)且使樣品留置500小時後，可靠度測試結果係藉由測量連接電阻而獲得。
測量之物理性質的結果係於下之表2顯示。
由表2可看出，依據本發明之用於膜之各向異性導電黏合組成物於接合後具有凹痕均勻性及改良之初步壓製性質，且於60℃或更多之初步壓製條件下，展現良好黏 合性及較少氣泡產生。
此外，依據本發明之各向異性導電膜具有4MPa或更多之高剝離強度，展現優異之與被黏物黏合性，且於連接電阻具有小增量及優異連接可靠度，即使於可靠度測試後。
因此，依據本發明之各向異性導電膜組成物及各向異性導電膜藉由於接合期間使壓力均勻地轉移至個別凸塊而展現改良之初步壓製性質及接合後均勻凹痕。
此外，依據本發明之各向異性導電膜展現改良之初步壓製性質，藉此，於60℃或更多之初步壓製條件下展現良好黏合性，同時降低氣泡產生。
再者，依據本發明之各向異性導電膜於可靠度測試後展現低的連接電阻增加，藉此，提供高的連接可靠度。
雖然一些實施例已於此處揭露，但需瞭解此等實施例僅係提供作為例示說明，且各種不同之修改、變化，及改變可於未偏離本發明之精神及範圍而進行。因此，本發明之範圍應僅受所附之申請專利範圍及其等化物所限制。

Claims (20)

  1. 一種各向異性導電膜，包含：一含有多環狀芳香族環之環氧樹脂；一芴環氧樹脂；奈米矽石；及導電顆粒，其中該各向異性導電膜於70℃及1MP下量測0.5秒時具有4MPa或更多之剝離強度。
  2. 如申請專利範圍第1項之各向異性導電膜，其中，該含有多環狀芳香族環之環氧樹脂具有165℃至250℃之固化後玻璃轉移溫度。
  3. 如申請專利範圍第1項之各向異性導電膜，其中，該芴環氧樹脂具有50至80℃之沸點及1,000或更少之分子量。
  4. 如申請專利範圍第1項之各向異性導電膜，其中，該含有多環狀芳香族環之環氧樹脂包含選自由四官能性含有芳香族環之環氧樹脂及二官能性含有芳香族環之環氧樹脂所組成組群之至少一者。
  5. 如申請專利範圍第1項之各向異性導電膜，其中，該含有多環狀芳香族環之環氧樹脂對該奈米矽石之重量比率範圍從3：1至6：1。
  6. 如申請專利範圍第1項之各向異性導電膜，其中，該芴環氧樹脂係於以化學式1表示之雙酚芴含有一環氧丙基 基團之一樹脂： 其中，R每一者獨立地係一烷基基團、一烷氧基基團、一芳基基團，或一環烷基基團，m每一者獨立地係從0至4之整數，且n每一者獨立地係從2至5之整數。
  7. 如申請專利範圍第1至6項中任一項之各向異性導電膜，其中，該含有多環狀芳香族環之環氧樹脂對該芴環氧樹脂之重量比率範圍從1：0.1至1：1.5。
  8. 如申請專利範圍第1至6項中任一項之各向異性導電膜，其中，該膜係用於玻璃覆晶基板安裝(chip on glass mounting)。
  9. 一種各向異性導電膜，包含：一含有多環狀芳香族環之環氧樹脂；一芴環氧樹脂，其具有50至80℃之沸點；及一奈米矽石，其中，該含有多環狀芳香族環之環氧樹脂對該芴環氧樹脂之重量比率範圍從1：0.1至1：1.5。
  10. 如申請專利範圍第9項之各向異性導電膜，其中，該芴環氧樹脂於25℃具有一液相。
  11. 如申請專利範圍第9項之各向異性導電膜，其中，該含 有多環狀芳香族環之環氧樹脂包含選自由四官能性含有芳香族環之環氧樹脂及二官能性含有芳香族環之環氧樹脂所組成組群之至少一者。
  12. 如申請專利範圍第9至11項中任一項之各向異性導電膜，其中，該含有多環狀芳香族環之環氧樹脂對該芴環氧樹脂之重量比率範圍從1：0.14至1：1。
  13. 如申請專利範圍第9至11項中任一項之各向異性導電膜，其中，該含有多環狀芳香族環之環氧樹脂對該奈米矽石之重量比率範圍從3：1至6：1。
  14. 如申請專利範圍第9至11項中任一項之各向異性導電膜，其中，於該膜被接合後，該膜提供均勻凹痕。
  15. 如申請專利範圍第14項之各向異性導電膜，其中，該膜具有60℃或更多之初步壓製溫度。
  16. 如申請專利範圍第1項之各向異性導電膜，具有高於60℃之初步壓製溫度。
  17. 如申請專利範圍第1項之各向異性導電膜，於該膜被接合後提供均勻凹痕。
  18. 如申請專利範圍第1項之各向異性導電膜，其中該芴環氧樹脂具有50至80℃之沸點。
  19. 如申請專利範圍第16至18項中任一項之各向異性導電膜，其中，該含有多環狀芳香族環之環氧樹脂對該芴環氧樹脂之重量比率範圍從1：0.1至1：1.5，且該含有多環狀芳香族環之環氧樹脂對該奈米矽石之重量比率範圍從3：1至6：1。
  20. 一種半導體裝置，係使用如申請專利範圍第1至19項中任一項之各向異性導電膜形成。
TW101150590A 2011-12-28 2012-12-27 各向異性導電膜及半導體裝置 TWI485218B (zh)

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US9048240B2 (en) 2015-06-02
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