TWI479597B - 提供減少電漿穿透與電弧之靜電吸盤的方法與設備 - Google Patents
提供減少電漿穿透與電弧之靜電吸盤的方法與設備 Download PDFInfo
- Publication number
- TWI479597B TWI479597B TW101139316A TW101139316A TWI479597B TW I479597 B TWI479597 B TW I479597B TW 101139316 A TW101139316 A TW 101139316A TW 101139316 A TW101139316 A TW 101139316A TW I479597 B TWI479597 B TW I479597B
- Authority
- TW
- Taiwan
- Prior art keywords
- dielectric
- electrostatic chuck
- substrate
- channel
- plasma
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 39
- 230000035515 penetration Effects 0.000 title description 2
- 230000002829 reductive effect Effects 0.000 title description 2
- 239000012530 fluid Substances 0.000 claims description 71
- 239000000758 substrate Substances 0.000 claims description 68
- 238000005553 drilling Methods 0.000 claims description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 7
- 239000007789 gas Substances 0.000 description 64
- 238000009826 distribution Methods 0.000 description 52
- 238000012545 processing Methods 0.000 description 43
- 230000015572 biosynthetic process Effects 0.000 description 17
- 230000008569 process Effects 0.000 description 15
- 239000013529 heat transfer fluid Substances 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- 230000005684 electric field Effects 0.000 description 6
- 239000007921 spray Substances 0.000 description 6
- 239000003989 dielectric material Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000000112 cooling gas Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000000670 limiting effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000615 nonconductor Substances 0.000 description 3
- 230000036961 partial effect Effects 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical group C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
- Jigs For Machine Tools (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/888,327 US8108981B2 (en) | 2007-07-31 | 2007-07-31 | Method of making an electrostatic chuck with reduced plasma penetration and arcing |
| US11/888,311 US7848076B2 (en) | 2007-07-31 | 2007-07-31 | Method and apparatus for providing an electrostatic chuck with reduced plasma penetration and arcing |
| US11/888,341 US9202736B2 (en) | 2007-07-31 | 2007-07-31 | Method for refurbishing an electrostatic chuck with reduced plasma penetration and arcing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201314834A TW201314834A (zh) | 2013-04-01 |
| TWI479597B true TWI479597B (zh) | 2015-04-01 |
Family
ID=40380622
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101139316A TWI479597B (zh) | 2007-07-31 | 2008-07-30 | 提供減少電漿穿透與電弧之靜電吸盤的方法與設備 |
| TW097128899A TWI399824B (zh) | 2007-07-31 | 2008-07-30 | 提供減少電漿穿透與電弧之靜電吸盤的方法與設備 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097128899A TWI399824B (zh) | 2007-07-31 | 2008-07-30 | 提供減少電漿穿透與電弧之靜電吸盤的方法與設備 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5140516B2 (enExample) |
| KR (1) | KR101125885B1 (enExample) |
| SG (1) | SG149791A1 (enExample) |
| TW (2) | TWI479597B (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8336891B2 (en) * | 2008-03-11 | 2012-12-25 | Ngk Insulators, Ltd. | Electrostatic chuck |
| US9728429B2 (en) | 2010-07-27 | 2017-08-08 | Lam Research Corporation | Parasitic plasma prevention in plasma processing chambers |
| JP5984504B2 (ja) * | 2012-05-21 | 2016-09-06 | 新光電気工業株式会社 | 静電チャック、静電チャックの製造方法 |
| US10784139B2 (en) * | 2016-12-16 | 2020-09-22 | Applied Materials, Inc. | Rotatable electrostatic chuck having backside gas supply |
| US11456161B2 (en) * | 2018-06-04 | 2022-09-27 | Applied Materials, Inc. | Substrate support pedestal |
| JP7269759B2 (ja) * | 2019-03-12 | 2023-05-09 | 新光電気工業株式会社 | 基板固定装置 |
| CN112908919B (zh) * | 2019-12-04 | 2024-07-09 | 中微半导体设备(上海)股份有限公司 | 静电吸盘装置及包括该静电吸盘装置的等离子体处理装置 |
| US12288672B2 (en) * | 2020-01-15 | 2025-04-29 | Applied Materials, Inc. | Methods and apparatus for carbon compound film deposition |
| US11887811B2 (en) * | 2020-09-08 | 2024-01-30 | Applied Materials, Inc. | Semiconductor processing chambers for deposition and etch |
| US11699571B2 (en) | 2020-09-08 | 2023-07-11 | Applied Materials, Inc. | Semiconductor processing chambers for deposition and etch |
| US20230238267A1 (en) * | 2022-01-26 | 2023-07-27 | Applied Materials, Inc. | Methods for electrostatic chuck ceramic surfacing |
| JP7507812B2 (ja) * | 2022-06-16 | 2024-06-28 | 日本特殊陶業株式会社 | 保持装置 |
| WO2024034127A1 (ja) * | 2022-08-12 | 2024-02-15 | 日本碍子株式会社 | 半導体製造装置用部材 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020095782A1 (en) * | 2001-01-22 | 2002-07-25 | Applied Materials, Inc. | Fabricating an electrostatic chuck having plasma resistant gas conduits |
| TW502368B (en) * | 2001-11-06 | 2002-09-11 | Duratek Inc | Electrostatic chuck and method for manufacturing the same |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2106325A (en) * | 1981-09-14 | 1983-04-07 | Philips Electronic Associated | Electrostatic chuck |
| US5792562A (en) * | 1995-01-12 | 1998-08-11 | Applied Materials, Inc. | Electrostatic chuck with polymeric impregnation and method of making |
| US5644467A (en) * | 1995-09-28 | 1997-07-01 | Applied Materials, Inc. | Method and structure for improving gas breakdown resistance and reducing the potential of arcing in a electrostatic chuck |
| US5720818A (en) * | 1996-04-26 | 1998-02-24 | Applied Materials, Inc. | Conduits for flow of heat transfer fluid to the surface of an electrostatic chuck |
| EP0803900A3 (en) * | 1996-04-26 | 1999-12-29 | Applied Materials, Inc. | Surface preparation to enhance the adhesion of a dielectric layer |
| US6108189A (en) * | 1996-04-26 | 2000-08-22 | Applied Materials, Inc. | Electrostatic chuck having improved gas conduits |
| US6263829B1 (en) * | 1999-01-22 | 2001-07-24 | Applied Materials, Inc. | Process chamber having improved gas distributor and method of manufacture |
| US6500299B1 (en) * | 1999-07-22 | 2002-12-31 | Applied Materials Inc. | Chamber having improved gas feed-through and method |
| JP3482949B2 (ja) * | 2000-08-04 | 2004-01-06 | 松下電器産業株式会社 | プラズマ処理方法及び装置 |
| JP2004158751A (ja) * | 2002-11-08 | 2004-06-03 | Matsushita Electric Ind Co Ltd | プラズマ処理装置 |
| JP4421874B2 (ja) * | 2003-10-31 | 2010-02-24 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| JP4364667B2 (ja) * | 2004-02-13 | 2009-11-18 | 東京エレクトロン株式会社 | 溶射部材、電極、およびプラズマ処理装置 |
-
2008
- 2008-07-24 KR KR1020080072273A patent/KR101125885B1/ko not_active Expired - Fee Related
- 2008-07-28 SG SG200805596-4A patent/SG149791A1/en unknown
- 2008-07-30 TW TW101139316A patent/TWI479597B/zh not_active IP Right Cessation
- 2008-07-30 TW TW097128899A patent/TWI399824B/zh not_active IP Right Cessation
- 2008-07-31 JP JP2008198466A patent/JP5140516B2/ja not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020095782A1 (en) * | 2001-01-22 | 2002-07-25 | Applied Materials, Inc. | Fabricating an electrostatic chuck having plasma resistant gas conduits |
| TW502368B (en) * | 2001-11-06 | 2002-09-11 | Duratek Inc | Electrostatic chuck and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201314834A (zh) | 2013-04-01 |
| SG149791A1 (en) | 2009-02-27 |
| KR20090013052A (ko) | 2009-02-04 |
| TW200921838A (en) | 2009-05-16 |
| TWI399824B (zh) | 2013-06-21 |
| JP5140516B2 (ja) | 2013-02-06 |
| JP2009065133A (ja) | 2009-03-26 |
| KR101125885B1 (ko) | 2012-03-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI479597B (zh) | 提供減少電漿穿透與電弧之靜電吸盤的方法與設備 | |
| US8108981B2 (en) | Method of making an electrostatic chuck with reduced plasma penetration and arcing | |
| US7848076B2 (en) | Method and apparatus for providing an electrostatic chuck with reduced plasma penetration and arcing | |
| US9202736B2 (en) | Method for refurbishing an electrostatic chuck with reduced plasma penetration and arcing | |
| US9218997B2 (en) | Electrostatic chuck having reduced arcing | |
| EP1074041B1 (en) | A high temperature multi-layered alloy heater assembly | |
| JP4485681B2 (ja) | 高周波能力を有する高温セラミックヒータ組立体 | |
| US20190221463A1 (en) | Process kit components for use with an extended and independent rf powered cathode substrate for extreme edge tunability | |
| US8274017B2 (en) | Multifunctional heater/chiller pedestal for wide range wafer temperature control | |
| US6051286A (en) | High temperature, high deposition rate process and apparatus for depositing titanium layers | |
| US8826855B2 (en) | C-shaped confinement ring for a plasma processing chamber | |
| JP2971847B2 (ja) | 高温、腐食性、プラズマ環境下でのクリーニングプロセスのための方法及び装置 | |
| JP7382329B2 (ja) | 基板支持体のためのプロセスキット | |
| TWI819370B (zh) | 用於沉積及蝕刻的半導體處理室 | |
| JP3004621B2 (ja) | 高温、高堆積率で膜を堆積する方法及び装置 | |
| CN105185681A (zh) | 气体分配装置及包含所述气体分配装置的基板加工装置 | |
| CN102315150A (zh) | 用于等离子体处理室的可移动基环 | |
| JPH10298767A (ja) | 高温、大流量化学気相堆積装置及び関連する方法 | |
| KR20250160992A (ko) | 아크 저항성 정전기 척 및 정전기 척을 위한 아크 감소 플러그 | |
| TW202532682A (zh) | 低溫磊晶腔室 | |
| WO2022245645A1 (en) | Low impedance current path for edge non-uniformity tuning |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |