KR101125885B1 - 감소된 플라즈마 침투 및 아킹을 갖는 정전척을 제공하는 방법 및 장치 - Google Patents

감소된 플라즈마 침투 및 아킹을 갖는 정전척을 제공하는 방법 및 장치 Download PDF

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Publication number
KR101125885B1
KR101125885B1 KR1020080072273A KR20080072273A KR101125885B1 KR 101125885 B1 KR101125885 B1 KR 101125885B1 KR 1020080072273 A KR1020080072273 A KR 1020080072273A KR 20080072273 A KR20080072273 A KR 20080072273A KR 101125885 B1 KR101125885 B1 KR 101125885B1
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KR
South Korea
Prior art keywords
dielectric
electrostatic chuck
plate
dielectric component
dielectric layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020080072273A
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English (en)
Korean (ko)
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KR20090013052A (ko
Inventor
드미트리 루보미르스키
진롱 첸
수드하 곤드하레칼
카드쓰라 라마야 나렌드라나쓰
무하메드 라쉬드
토니 카우샬
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Publication date
Priority claimed from US11/888,327 external-priority patent/US8108981B2/en
Priority claimed from US11/888,311 external-priority patent/US7848076B2/en
Priority claimed from US11/888,341 external-priority patent/US9202736B2/en
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20090013052A publication Critical patent/KR20090013052A/ko
Application granted granted Critical
Publication of KR101125885B1 publication Critical patent/KR101125885B1/ko
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Jigs For Machine Tools (AREA)
KR1020080072273A 2007-07-31 2008-07-24 감소된 플라즈마 침투 및 아킹을 갖는 정전척을 제공하는 방법 및 장치 Expired - Fee Related KR101125885B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US11/888,341 2007-07-31
US11/888,311 2007-07-31
US11/888,327 US8108981B2 (en) 2007-07-31 2007-07-31 Method of making an electrostatic chuck with reduced plasma penetration and arcing
US11/888,327 2007-07-31
US11/888,311 US7848076B2 (en) 2007-07-31 2007-07-31 Method and apparatus for providing an electrostatic chuck with reduced plasma penetration and arcing
US11/888,341 US9202736B2 (en) 2007-07-31 2007-07-31 Method for refurbishing an electrostatic chuck with reduced plasma penetration and arcing

Publications (2)

Publication Number Publication Date
KR20090013052A KR20090013052A (ko) 2009-02-04
KR101125885B1 true KR101125885B1 (ko) 2012-03-22

Family

ID=40380622

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080072273A Expired - Fee Related KR101125885B1 (ko) 2007-07-31 2008-07-24 감소된 플라즈마 침투 및 아킹을 갖는 정전척을 제공하는 방법 및 장치

Country Status (4)

Country Link
JP (1) JP5140516B2 (enExample)
KR (1) KR101125885B1 (enExample)
SG (1) SG149791A1 (enExample)
TW (2) TWI479597B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8336891B2 (en) * 2008-03-11 2012-12-25 Ngk Insulators, Ltd. Electrostatic chuck
US9728429B2 (en) 2010-07-27 2017-08-08 Lam Research Corporation Parasitic plasma prevention in plasma processing chambers
JP5984504B2 (ja) * 2012-05-21 2016-09-06 新光電気工業株式会社 静電チャック、静電チャックの製造方法
US10784139B2 (en) * 2016-12-16 2020-09-22 Applied Materials, Inc. Rotatable electrostatic chuck having backside gas supply
US11456161B2 (en) * 2018-06-04 2022-09-27 Applied Materials, Inc. Substrate support pedestal
JP7269759B2 (ja) * 2019-03-12 2023-05-09 新光電気工業株式会社 基板固定装置
CN112908919B (zh) * 2019-12-04 2024-07-09 中微半导体设备(上海)股份有限公司 静电吸盘装置及包括该静电吸盘装置的等离子体处理装置
US12288672B2 (en) * 2020-01-15 2025-04-29 Applied Materials, Inc. Methods and apparatus for carbon compound film deposition
US11887811B2 (en) * 2020-09-08 2024-01-30 Applied Materials, Inc. Semiconductor processing chambers for deposition and etch
US11699571B2 (en) 2020-09-08 2023-07-11 Applied Materials, Inc. Semiconductor processing chambers for deposition and etch
US20230238267A1 (en) * 2022-01-26 2023-07-27 Applied Materials, Inc. Methods for electrostatic chuck ceramic surfacing
JP7507812B2 (ja) * 2022-06-16 2024-06-28 日本特殊陶業株式会社 保持装置
WO2024034127A1 (ja) * 2022-08-12 2024-02-15 日本碍子株式会社 半導体製造装置用部材

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR900003615B1 (ko) * 1981-09-14 1990-05-26 디.제이, 삭커스 정전 처크
US6108189A (en) * 1996-04-26 2000-08-22 Applied Materials, Inc. Electrostatic chuck having improved gas conduits
US6263829B1 (en) * 1999-01-22 2001-07-24 Applied Materials, Inc. Process chamber having improved gas distributor and method of manufacture

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5792562A (en) * 1995-01-12 1998-08-11 Applied Materials, Inc. Electrostatic chuck with polymeric impregnation and method of making
US5644467A (en) * 1995-09-28 1997-07-01 Applied Materials, Inc. Method and structure for improving gas breakdown resistance and reducing the potential of arcing in a electrostatic chuck
US5720818A (en) * 1996-04-26 1998-02-24 Applied Materials, Inc. Conduits for flow of heat transfer fluid to the surface of an electrostatic chuck
EP0803900A3 (en) * 1996-04-26 1999-12-29 Applied Materials, Inc. Surface preparation to enhance the adhesion of a dielectric layer
US6500299B1 (en) * 1999-07-22 2002-12-31 Applied Materials Inc. Chamber having improved gas feed-through and method
JP3482949B2 (ja) * 2000-08-04 2004-01-06 松下電器産業株式会社 プラズマ処理方法及び装置
US6581275B2 (en) * 2001-01-22 2003-06-24 Applied Materials Inc. Fabricating an electrostatic chuck having plasma resistant gas conduits
TW502368B (en) * 2001-11-06 2002-09-11 Duratek Inc Electrostatic chuck and method for manufacturing the same
JP2004158751A (ja) * 2002-11-08 2004-06-03 Matsushita Electric Ind Co Ltd プラズマ処理装置
JP4421874B2 (ja) * 2003-10-31 2010-02-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP4364667B2 (ja) * 2004-02-13 2009-11-18 東京エレクトロン株式会社 溶射部材、電極、およびプラズマ処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR900003615B1 (ko) * 1981-09-14 1990-05-26 디.제이, 삭커스 정전 처크
US6108189A (en) * 1996-04-26 2000-08-22 Applied Materials, Inc. Electrostatic chuck having improved gas conduits
US6263829B1 (en) * 1999-01-22 2001-07-24 Applied Materials, Inc. Process chamber having improved gas distributor and method of manufacture

Also Published As

Publication number Publication date
TWI479597B (zh) 2015-04-01
TW201314834A (zh) 2013-04-01
SG149791A1 (en) 2009-02-27
KR20090013052A (ko) 2009-02-04
TW200921838A (en) 2009-05-16
TWI399824B (zh) 2013-06-21
JP5140516B2 (ja) 2013-02-06
JP2009065133A (ja) 2009-03-26

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US7848076B2 (en) Method and apparatus for providing an electrostatic chuck with reduced plasma penetration and arcing
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