TWI470261B - Radiation detector and manufacturing method thereof - Google Patents

Radiation detector and manufacturing method thereof Download PDF

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TWI470261B
TWI470261B TW101123046A TW101123046A TWI470261B TW I470261 B TWI470261 B TW I470261B TW 101123046 A TW101123046 A TW 101123046A TW 101123046 A TW101123046 A TW 101123046A TW I470261 B TWI470261 B TW I470261B
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adhesive
edge portion
moisture
array substrate
layer
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TW201307878A (en
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Yuichi Shinba
Katsuhisa Homma
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Toshiba Kk
Toshiba Electron Tubes & Devic
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放射線檢測器及其製造方法Radiation detector and method of manufacturing same

本發明係關於檢測放射線之放射線檢測器及其製造方法。The present invention relates to a radiation detector for detecting radiation and a method of manufacturing the same.

作為新一代之X射線診斷用檢測器,開發有使用主動矩陣之平面形之X射線檢測器。藉由檢測照射至該X射線檢測器之X射線,使X射線攝影像、或即時性之X射線圖像作為數位訊號輸出。在該X射線檢測器中,藉由閃爍體層將X射線轉換成可視光,即螢光,且藉由以非晶矽(a-Si)光電二極體或CCD(Charge Coupled Device電荷耦合裝置)等之光電轉換元件,將該螢光轉換成訊號電荷以取得圖像。As a new generation of X-ray diagnostic detectors, a planar X-ray detector using an active matrix has been developed. The X-ray image or the instantaneous X-ray image is output as a digital signal by detecting X-rays that are incident on the X-ray detector. In the X-ray detector, X-rays are converted into visible light, that is, fluorescent light, by a scintillator layer, and by an amorphous germanium (a-Si) photodiode or a CCD (Charge Coupled Device). A photoelectric conversion element that converts the fluorescent light into a signal charge to obtain an image.

作為閃爍體層之材料,一般使用碘化銫(CsI):鈉(Na)、碘化銫(CsI):鉈(Tl)、碘化鈉(NaI)、或二氧硫化二釓(Gd2 O2 S)等。閃爍體層可藉由利用切割等形成溝槽,或以蒸鍍法堆積形成柱狀構造,使解像度特性提升。作為閃爍體之材料係具有如上所述之各種,且藉由用途或所需之特性來區別使用。As a material of the scintillator layer, cesium iodide (CsI) is generally used: sodium (Na), cesium iodide (CsI): strontium (Tl), sodium iodide (NaI), or dioxonium disulfide (Gd 2 O 2 ) S) and so on. The scintillator layer can be formed by forming a groove by dicing or the like, or depositing a columnar structure by vapor deposition to improve the resolution characteristics. The material as the scintillator has various kinds as described above, and is distinguished from use by use or characteristics required.

為提高螢光於閃爍體層之上表面之利用效率且改善感應度特性,有形成反射膜之情形。即,令閃爍體層發光之螢光中朝向光電轉換元件之相反側之螢光以反射膜反射,從而增大到達光電轉換元件側之螢光。In order to improve the utilization efficiency of the fluorescent light on the upper surface of the scintillator layer and to improve the sensitivity characteristics, there is a case where a reflective film is formed. In other words, the fluorescent light that is directed toward the opposite side of the photoelectric conversion element in the fluorescent light emitted from the scintillator layer is reflected by the reflective film, thereby increasing the fluorescence reaching the photoelectric conversion element side.

反射膜係以將銀合金或鋁等螢光反射率較高之金屬層成膜於閃爍體層上之方法、或塗布包含TiO2 等之光散射性物 質與粘合樹脂之光散射反射性之反射膜之方法等來形成。此外,未形成於閃爍體膜上,但將具有鋁等金屬表面之反射板密接於閃爍體層來反射閃爍光之方式亦被實用化。The reflective film is formed by a method of forming a metal layer having a high fluorescence reflectance such as a silver alloy or aluminum on a scintillator layer, or a light-scattering property of a light-scattering substance containing TiO 2 or the like and a binder resin. A method of forming a film or the like is formed. Further, although it is not formed on the scintillator film, a method in which a reflector having a metal surface such as aluminum is adhered to the scintillator layer to reflect the scintillation light is also put into practical use.

用以自外部環境氣體中保護閃爍體層或反射層(或反射板等),且抑制因為濕度等致使特性劣化之防濕構造係在檢測器作為實用性製品上重要之構成要件。尤其,在對濕度導致劣化性較大之材料,即以CsI:Tl膜或CsI:Na膜作為閃爍體層之情形下,需要具有高防濕性能。作為防濕構造係有例如將鋁箔等之防濕層與基板之周邊部接著密封來保持防濕性能之構造,或將鋁箔或薄板等之防濕層與基板介隔周圍之環狀構造物而接著密封之構造等。A moisture-proof structure for protecting a scintillator layer or a reflective layer (or a reflecting plate or the like) from an external ambient gas and suppressing deterioration of characteristics due to humidity or the like is an important component of the detector as a practical product. In particular, in the case of a material which causes deterioration in humidity, that is, a CsI:Tl film or a CsI:Na film as a scintillator layer, it is required to have high moisture resistance. The moisture-proof structure is, for example, a structure in which a moisture-proof layer such as an aluminum foil is sealed to a peripheral portion of the substrate to maintain moisture-proof performance, or a moisture-proof layer such as an aluminum foil or a thin plate is interposed between the substrate and the substrate. Then seal the structure and the like.

[先行技術文獻][Advanced technical literature] [專利文獻][Patent Literature]

[專利文獻1]日本特開2009-128023號公報[Patent Document 1] Japanese Patent Laid-Open Publication No. 2009-128023

[專利文獻2]日本特開平5-242841號公報[Patent Document 2] Japanese Patent Laid-Open No. Hei 5-242841

使用帽狀金屬箔或薄板作為防濕體,且將帽緣部與陣列基板表面接著密封之方法係眾所周知。陣列基板係於玻璃基板上形成TFT或光電二極體之像素者。該等防濕體與基板之接著係使用紫外線硬化型或熱硬化型之樹脂接著劑。塗布接著劑、壓接、硬化時產生接著層薄膜化、收窄化,無法確保形成於基板之金屬配線與金屬性防濕體之間之絕緣接著層有足夠之厚度,從而存在電性短路之危險。A method of using a cap-shaped metal foil or a thin plate as a moisture-proof body and sealing the cap portion to the surface of the array substrate is well known. The array substrate is formed on a glass substrate to form a pixel of a TFT or a photodiode. An ultraviolet curable or thermosetting resin adhesive is used for the moisture barrier and the substrate. When the adhesive is applied, pressure-bonded, and hardened, the adhesive layer is thinned and narrowed, and the insulating adhesive layer between the metal wiring formed on the substrate and the metallic moisture-proof body is not sufficiently thick, and there is an electrical short circuit. Danger.

此外,存在有在減壓環境氣體下進行將防濕體接著於基板,藉由使防濕體內部成減壓狀態,保持飛機運輸等之減壓環境下之機械性強度之方法。該情形,防濕體係受外部大氣壓按壓基板側,具有使基板之金屬配線與防濕體接近之傾向。在防濕體過度接近基板之情形下,電性短路之危險係增加,且因防濕體之變形致使接著層受到負載,從而亦使接著層具有剝離之危險。Further, there is a method in which the moisture-proof body is attached to the substrate under a reduced-pressure atmosphere, and the inside of the moisture-proof body is decompressed to maintain the mechanical strength in a reduced-pressure environment such as aircraft transportation. In this case, the moisture-proof system is pressed against the substrate side by the external atmospheric pressure, and the metal wiring of the substrate tends to be close to the moisture-proof body. In the case where the moisture-proof body is excessively close to the substrate, the risk of electrical short-circuit increases, and the deformation of the moisture-proof body causes the adhesive layer to be loaded, thereby also causing the adhesive layer to have a risk of peeling.

因此,本發明所欲解決之課題係在於提供一種放射線檢測器,其係可提升防濕體與陣列基板間之接著層之健全性。Accordingly, the problem to be solved by the present invention is to provide a radiation detector which improves the soundness of an adhesive layer between a moistureproof body and an array substrate.

為解決上述課題,實施形態之放射線檢測器具備:陣列基板,其係設有排列有將螢光轉換成電性訊號之光電轉換元件之光電轉換元件層;閃爍體膜,其係以覆蓋上述光電轉換元件層之方式設置於上述陣列基板之表面,且將放射線轉換成螢光;防濕體,其具備與上述陣列基板對向且包圍上述閃爍體膜之緣部,並覆蓋上述閃爍體膜;及接著層,其係使上述緣部與上述陣列基板接著,且其內緣遍及全周位於比上述緣部更內側。In order to solve the above problems, a radiation detector according to an embodiment includes an array substrate having a photoelectric conversion element layer in which photoelectric conversion elements for converting fluorescent light into electrical signals are arranged, and a scintillator film covering the above-mentioned photoelectric a conversion element layer is disposed on a surface of the array substrate, and converts the radiation into a fluorescent light; and the moistureproof body includes an edge portion facing the array substrate and surrounding the scintillator film, and covers the scintillator film; And an adhesive layer, wherein the edge portion is followed by the array substrate, and an inner edge thereof is located further inside than the edge portion over the entire circumference.

又,實施形態之放射線檢測器之製造方法具備:形成閃爍體層之步驟,該閃爍體層係在設有排列有將螢光轉換成電性訊號之光電轉換元件之光電轉換元件層之基板之表面,以覆蓋上述光電轉換元件層之方式形成將放射線轉換成螢光之上述閃爍體層;塗布步驟,其係於周圍形成有帶 狀之緣部之防濕體之上述緣部、及較上述防濕體之上述緣部更內側,至少塗布2層接著劑;接著步驟,其係在上述塗布步驟之後,將上述緣部之塗布有上述接著劑之面在減壓環境氣體下按壓至較上述基板之上述閃爍體膜更外側之部分;及硬化步驟,其係使上述接著劑硬化。Further, a method of manufacturing a radiation detector according to an embodiment includes a step of forming a scintillator layer on a surface of a substrate on which a photoelectric conversion element layer in which a photoelectric conversion element that converts fluorescence into an electrical signal is disposed is provided. Forming the scintillator layer for converting radiation into fluorescence in such a manner as to cover the photoelectric conversion element layer; and applying a step of forming a strip around the layer The edge portion of the moisture-proof body at the edge portion of the shape and the inner edge portion of the moisture-proof body are coated with at least two layers of an adhesive; and the step of coating the edge portion after the coating step The surface of the adhesive is pressed to a portion outside the scintillator film of the substrate under a reduced-pressure atmosphere, and a curing step is performed to cure the adhesive.

以下參照圖示對一實施形態之放射線檢測器加以說明。另,相同或類似之構成係附以同一符號並省略重複說明。Hereinafter, a radiation detector according to an embodiment will be described with reference to the drawings. Incidentally, the same or similar components are denoted by the same reference numerals and the repeated description is omitted.

圖6係一實施形態之放射線檢測裝置之模式化立體圖。Fig. 6 is a schematic perspective view of a radiation detecting apparatus according to an embodiment.

本實施形態之放射線檢測器11係檢測放射線像即X射線圖像之X射線平面感應器,例如用於一般醫療用途等。放射線檢測裝置10係具有:該放射線檢測器11、支持板31、電路基板30、及可撓性基板32。放射線檢測器11係具有陣列基板12與閃爍體膜13。放射線檢測器11係檢測入射之X射線且轉換成螢光,並將該螢光轉換成電性訊號。放射線檢測裝置10係驅動放射線檢測器11,且將自放射線檢測器11輸出之電性訊號作為圖像資訊輸出。放射線檢測裝置10輸出之圖像資訊係顯示於外部之顯示裝置等。The radiation detector 11 of the present embodiment is an X-ray plane sensor that detects an X-ray image that is a radiation image, and is used, for example, in general medical use. The radiation detecting device 10 includes the radiation detector 11, the support plate 31, the circuit board 30, and the flexible substrate 32. The radiation detector 11 has an array substrate 12 and a scintillator film 13. The radiation detector 11 detects incident X-rays and converts them into fluorescent light, and converts the fluorescent light into electrical signals. The radiation detecting device 10 drives the radiation detector 11 and outputs an electrical signal output from the radiation detector 11 as image information. The image information output from the radiation detecting device 10 is displayed on an external display device or the like.

陣列基板12係具有玻璃基板16。於玻璃基板16之表面係正方格子狀地排列有複數個細微之像素20。各像素20係具有薄膜電晶體22及光電二極體21。又,於玻璃基板16之表面,與像素20所排列之正方格子之列數相同數量之控制線18係延伸於各像素20之間。再者,於玻璃基板16之表面,與像素20所排列之正方格子之行數相同數量之資料線19係 延伸於各像素20之間。閃爍體膜13係形成於陣列基板12之像素20排列之區域之表面。The array substrate 12 has a glass substrate 16. A plurality of fine pixels 20 are arranged on the surface of the glass substrate 16 in a square lattice shape. Each of the pixels 20 has a thin film transistor 22 and a photodiode 21. Further, on the surface of the glass substrate 16, the same number of control lines 18 as the number of columns of the square lattices in which the pixels 20 are arranged extend between the pixels 20. Furthermore, on the surface of the glass substrate 16, the same number of data lines 19 as the number of rows of square lattices in which the pixels 20 are arranged Extending between each pixel 20. The scintillator film 13 is formed on the surface of the region where the pixels 20 of the array substrate 12 are arranged.

閃爍體膜13係設置於陣列基板12之表面,當X射線入射,則產生可視光區域之螢光。產生之螢光係到達陣列基板12之表面。The scintillator film 13 is provided on the surface of the array substrate 12, and when X-rays are incident, the fluorescent light in the visible light region is generated. The resulting fluorescent light reaches the surface of the array substrate 12.

閃爍體膜13係將例如碘化銫(CsI):鉈(Tl)、或碘化鈉(NaI):鉈(Tl)等以真空蒸鍍法形成柱狀構造者。CsI:Tl之柱狀構造結晶之柱(支柱)之粗細在最表面例如為8~12 μm左右。或亦可將二氧硫化二釓(Gd2 O2 S)螢光體粒子與粘合材料混合,塗布於陣列基板12上焙燒及硬化,並藉由切割機切割等而形成溝槽部,形成四角柱狀,從而形成閃爍體膜13。於該等之柱間封入有大氣或防氧化用之氮氣(N2 )等之惰性氣體,或亦可成真空狀態。The scintillator film 13 is formed by, for example, a ruthenium iodide (CsI): ruthenium (Tl) or sodium iodide (NaI): ruthenium (Tl) by a vacuum deposition method. CsI: The thickness of the column (pillar) of the columnar structure crystal of Tl is, for example, about 8 to 12 μm on the outermost surface. Alternatively, the dioxonium disulfide (Gd 2 O 2 S) phosphor particles may be mixed with a binder, coated on the array substrate 12, fired and hardened, and cut by a cutter to form a groove portion. The prisms are quadrangular to form the scintillator film 13. An inert gas such as nitrogen (N 2 ) for atmospheric or anti-oxidation may be enclosed between the columns, or may be in a vacuum state.

陣列基板12接收由閃爍體膜13產生之螢光,並產生電性訊號。其結果,藉由入射之X射線而在閃爍體膜13上產生之可視光像被轉換成以電性訊號表現之圖像資訊。The array substrate 12 receives the fluorescent light generated by the scintillator film 13 and generates an electrical signal. As a result, the visible light image generated on the scintillator film 13 by the incident X-rays is converted into image information expressed by an electrical signal.

放射線檢測器11係以形成有閃爍體膜13之面之相反側之面與支持板31接觸之方式,由支持板31支持。電路基板30係相對於支持板31之放射線檢測器11而配置於相反側。放射線檢測器11與電路基板30之間以可撓性基板32電性連接。The radiation detector 11 is supported by the support plate 31 so that the surface on the opposite side to the surface on which the scintillator film 13 is formed is in contact with the support plate 31. The circuit board 30 is disposed on the opposite side with respect to the radiation detector 11 of the support board 31. The radiation detector 11 and the circuit board 30 are electrically connected to each other by a flexible substrate 32.

圖7係本實施形態之放射線檢測器之電路圖。Fig. 7 is a circuit diagram of the radiation detector of the embodiment.

各光電二極體21係介以開關元件即薄膜電晶體22,連接於控制線18及資料線19。又,於各光電二極體21並聯連接 有蓄積電容器27。另,由於亦存在光電二極體21之電容兼用作蓄積電容器27之情形,故蓄積電容器27係並非必須者。Each of the photodiodes 21 is connected to the control line 18 and the data line 19 via a thin film transistor 22 which is a switching element. Moreover, the photoelectric diodes 21 are connected in parallel There is an accumulation capacitor 27. Further, since the capacitance of the photodiode 21 also serves as the storage capacitor 27, the storage capacitor 27 is not essential.

光電二極體21及與其並聯連接之蓄積電容器27係連接於薄膜電晶體22之汲極電極25。薄膜電晶體22之閘電極23係連接於控制線18。薄膜電晶體22之源電極24係連接於資料線19。The photodiode 21 and the storage capacitor 27 connected in parallel are connected to the drain electrode 25 of the thin film transistor 22. The gate electrode 23 of the thin film transistor 22 is connected to the control line 18. The source electrode 24 of the thin film transistor 22 is connected to the data line 19.

位於排列之相同列之像素20之薄膜電晶體22之閘電極23係連接於相同之控制線18。位於排列之相同行之像素20之薄膜電晶體22之源電極24係連接於相同之資料線19。The gate electrodes 23 of the thin film transistors 22 located in the same column of pixels 20 are connected to the same control line 18. The source electrodes 24 of the thin film transistors 22 located in the pixels 20 of the same row are connected to the same data line 19.

相同列之像素20中之薄膜電晶體22之閘電極23係連接於相同之控制線18。相同行之像素20中之薄膜電晶體22之源電極24係連接於相同資料線19。The gate electrodes 23 of the thin film transistors 22 in the pixels 20 of the same column are connected to the same control line 18. The source electrodes 24 of the thin film transistors 22 in the pixels 20 of the same row are connected to the same data line 19.

各薄膜電晶體22係負責轉換功能,其係蓄積及放出因螢光入射向光電二極體21而產生之電荷。薄膜電晶體22之至少一部分係由作為具有結晶性之半導體材料即非晶質半導體之非晶矽(a-Si)、或多結晶半導體即多晶矽(P-Si)等之半導體材料構成。Each of the thin film transistors 22 is responsible for the conversion function, which accumulates and discharges electric charges generated by the incident light to the photodiode 21 by the fluorescent light. At least a part of the thin film transistor 22 is made of a semiconductor material such as amorphous germanium (a-Si) which is an amorphous semiconductor which is a crystalline semiconductor material, or polycrystalline germanium (P-Si) which is a polycrystalline semiconductor.

另,圖6及圖7中,雖然像素僅記述有5列5行或4列4行,但實際上形成有更多對應解析度、攝像面積所需要之像素。In addition, in FIGS. 6 and 7, although only five columns of five rows or four columns of four rows are described in the pixel, actually, more pixels necessary for the resolution and the imaging area are formed.

圖8係本實施形態之放射線檢測裝置之方塊圖。Fig. 8 is a block diagram of the radiation detecting apparatus of the embodiment.

放射線裝置10係具有:放射線檢測器11、閘極驅動器39、列選擇電路35、積分放大器33、A/D轉換器34、並聯/ 串聯轉換器38、及圖像合成電路36。閘極驅動器39係連接於放射線檢測器11之各控制線18。閘極驅動器39係控制各薄膜電晶體22之動作狀態,即開啟及關閉。積分放大器33係連接於放射線檢測器11之各資料線19。The radiation device 10 includes a radiation detector 11, a gate driver 39, a column selection circuit 35, an integrating amplifier 33, an A/D converter 34, and a parallel/ The series converter 38 and the image synthesizing circuit 36. The gate driver 39 is connected to each control line 18 of the radiation detector 11. The gate driver 39 controls the operation state of each of the thin film transistors 22, that is, on and off. The integrating amplifier 33 is connected to each of the data lines 19 of the radiation detector 11.

列選擇電路35係連接於閘極驅動器39。並聯/串聯轉換器38係連接於積分放大器33。A/D轉換器34係連接於並聯/串聯轉換器38。A/D轉換器34係連接於圖像合成電路36。The column selection circuit 35 is connected to the gate driver 39. The parallel/serial converter 38 is connected to the integrating amplifier 33. The A/D converter 34 is connected to the parallel/series converter 38. The A/D converter 34 is connected to the image synthesizing circuit 36.

積分放大器33係例如設置於連接放射線檢測器11與電路基板30之可撓性基板32上。其他元件係例如設置於電路基板30上。The integrating amplifier 33 is provided, for example, on the flexible substrate 32 that connects the radiation detector 11 and the circuit board 30. Other components are provided, for example, on the circuit substrate 30.

閘極驅動器39係接收來自選擇電路35之訊號,且按序轉換控制線18之電壓。列選擇電路35係將用以選擇掃描X射線圖像之特定列之訊號傳送向閘極驅動器39。積分放大器33係將自放射線檢測面板21通過資料線19輸出之極微小之電荷訊號增幅並輸出。The gate driver 39 receives the signal from the selection circuit 35 and sequentially switches the voltage of the control line 18. The column selection circuit 35 transmits a signal for selecting a particular column of the scanned X-ray image to the gate driver 39. The integrating amplifier 33 amplifies and outputs an extremely small charge signal output from the radiation detecting panel 21 through the data line 19.

圖9係本實施形態之放射線檢測器之局部擴大剖視圖。Fig. 9 is a partially enlarged cross-sectional view showing the radiation detector of the embodiment.

於陣列基板12之表面形成有絕緣性保護膜28,其覆蓋光電二極體21及薄膜電晶體22等之檢測元件,與控制線18及資料線19等之金屬配線。閃爍體膜13係於保護膜28之表面,以覆蓋像素20排列之區域之方式而形成。An insulating protective film 28 is formed on the surface of the array substrate 12, and covers the detecting elements such as the photodiode 21 and the thin film transistor 22, and the metal wiring such as the control line 18 and the data line 19. The scintillator film 13 is formed on the surface of the protective film 28 so as to cover the region in which the pixels 20 are arranged.

於閃爍體膜13之表面設置有反射膜14。反射膜14係令在閃爍體膜13產生之螢光中之遠離陣列基板12者反射向陣列基板12側。藉此,增大到達光電二極體21之螢光光量。A reflective film 14 is provided on the surface of the scintillator film 13. The reflection film 14 is such that the phosphor generated by the scintillator film 13 is reflected away from the array substrate 12 toward the array substrate 12 side. Thereby, the amount of fluorescent light reaching the photodiode 21 is increased.

反射膜14係以使銀合金或鋁等螢光反射率較高之金屬成 膜於閃爍體膜上之方法形成。或,將具有鋁等金屬表面之反射板密接於閃爍體膜13者,又或塗布包含TiO2 等之光散射性物質與粘合樹脂之擴散反射性之反射膜14來形成亦可。另,反射膜14係藉由放射線檢測器11謀求之解析度、亮度等特性而設,並非必須者。The reflective film 14 is formed by a method in which a metal having a high fluorescence reflectance such as a silver alloy or aluminum is formed on a scintillator film. Alternatively, a reflector having a metal surface such as aluminum may be adhered to the scintillator film 13 or a light-scattering material containing TiO 2 or the like and a reflective film 14 having a diffuse reflectance of the binder resin may be applied. Further, the reflection film 14 is provided by characteristics such as resolution and brightness which the radiation detector 11 seeks, and is not essential.

放射線檢測器11以覆蓋閃爍體膜13及反射膜14之方式設置有防濕體15。The radiation detector 11 is provided with a moistureproof body 15 so as to cover the scintillator film 13 and the reflection film 14.

圖10係本實施形態之放射線檢測器之上表面圖。圖11係本實施形態之放射線檢測器之側視圖。Fig. 10 is a top plan view of the radiation detector of the embodiment. Fig. 11 is a side view of the radiation detector of the embodiment.

防濕體15係形成為中央部隆起之帽狀。防濕體15之周邊部分係成平坦帶狀之緣部50。緣部50係形成為包圍陣列基板12之表面之閃爍膜13所形成之區域之外側之帶狀。緣部50之內側形成有頂板部51。頂板部51係較閃爍體膜13稍大之平板狀之部分。緣部50與頂板部51之間形成有斜面部52。The moisture-proof body 15 is formed in a hat shape in which the central portion is raised. The peripheral portion of the moisture-proof body 15 is formed into a flat strip-shaped edge portion 50. The edge portion 50 is formed in a strip shape on the outer side of the region formed by the scintillation film 13 surrounding the surface of the array substrate 12. A top plate portion 51 is formed inside the edge portion 50. The top plate portion 51 is a flat portion which is slightly larger than the scintillator film 13. A slope portion 52 is formed between the edge portion 50 and the top plate portion 51.

緣部50係與陣列基板12對向。緣部50與陣列基板12之間係成接著狀態。形成於陣列基板12上之閃爍膜13及反射膜14係被防濕體15之頂板部51及斜面部52覆蓋。防濕體15係自外界空氣或濕度中保護閃爍體膜13及反射膜14。The edge portion 50 is opposed to the array substrate 12. The edge portion 50 and the array substrate 12 are in a connected state. The scintillation film 13 and the reflection film 14 formed on the array substrate 12 are covered by the top plate portion 51 of the moistureproof body 15 and the inclined surface portion 52. The moistureproof body 15 protects the scintillator film 13 and the reflective film 14 from outside air or humidity.

防濕體15係例如以厚度0.1 mm之鋁合金箔形成。防濕體15係以AlN30-O材料等之鋁合金箔或鋁箔形成。緣部50之寬度例如為5 mm。The moisture-proof body 15 is formed, for example, of an aluminum alloy foil having a thickness of 0.1 mm. The moisture-proof body 15 is formed of an aluminum alloy foil or an aluminum foil such as an AlN30-O material. The width of the rim 50 is, for example, 5 mm.

於陣列基板12設置有露出控制線18及資料線19之各者之端部之端子群26。端子群26係沿陣列基板12之邊排列。連 接控制線18之端子群26與連接資料線19之端子群26係沿不同邊排列。該等之端子群26係介以可撓性基板32與電路基板電性連接。A terminal group 26 in which the end portions of each of the control line 18 and the data line 19 are exposed is provided on the array substrate 12. The terminal groups 26 are arranged along the sides of the array substrate 12. even The terminal group 26 connected to the control line 18 and the terminal group 26 connected to the data line 19 are arranged along different sides. The terminal groups 26 are electrically connected to the circuit board via the flexible substrate 32.

圖1係本實施形態之防濕體之緣部附近之擴大剖視圖。圖2係本實施形態之防濕體之緣部附近之擴大俯視圖。Fig. 1 is an enlarged cross-sectional view showing the vicinity of an edge portion of a moistureproof body of the embodiment. Fig. 2 is an enlarged plan view showing the vicinity of the edge portion of the moistureproof body of the embodiment.

防濕體15之緣部50與陣列基板12之間係介隔有接著層40。接著層40係沿緣部50,設置成包圍陣列基板12之表面之閃爍體膜13所形成之區域之外側之帶狀。接著層40之內緣,即陣列基板12之表面之閃爍體膜13所形成之區域之附近側之內緣43係遍及全周皆位於比緣部50之內緣53更內側。接著層40係以加熱硬化型或紫外線硬化型之環氧樹脂系之接著劑形成。The edge layer 40 is interposed between the edge portion 50 of the moisture-proof body 15 and the array substrate 12. Next, the layer 40 is provided along the edge portion 50 in a strip shape on the outer side of the region formed by the scintillator film 13 surrounding the surface of the array substrate 12. Next, the inner edge 43 of the inner edge of the layer 40, that is, the vicinity of the region formed by the scintillator film 13 on the surface of the array substrate 12, is located further inside than the inner edge 53 of the edge portion 50 over the entire circumference. Next, the layer 40 is formed of a heat-curing type or an ultraviolet curing type epoxy resin-based adhesive.

接著,對本實施形態之放射線檢測器之製造方法加以說明。Next, a method of manufacturing the radiation detector of the present embodiment will be described.

首先,於玻璃基板16之表面形成光電轉換部17、控制線18及訊號線19等(參照圖6),並取得陣列基板12。接著,於該陣列基板12上,按序形成閃爍體膜13及反射膜14。又,藉由將鋁合金箔等壓制成型成帽狀以製造防濕體15。First, the photoelectric conversion portion 17, the control line 18, the signal line 19, and the like are formed on the surface of the glass substrate 16 (see FIG. 6), and the array substrate 12 is obtained. Next, on the array substrate 12, the scintillator film 13 and the reflection film 14 are sequentially formed. Further, the moisture-proof body 15 is produced by press-molding an aluminum alloy foil or the like into a hat shape.

其次,將令如此取得之閃爍體膜13及反射膜14一體化之陣列基板12與防濕體15接著。Next, the array substrate 12 in which the scintillator film 13 and the reflection film 14 thus obtained are integrated is connected to the moisture-proof body 15.

圖3係顯示向本實施形態之防濕體塗布接著劑之方法之俯視圖。圖4係顯示向本實施形態之防濕體塗布接著劑之方法之局部擴大俯視圖。圖5係顯示向本實施形態之防濕體塗布接著劑之方法之局部擴大剖視圖。Fig. 3 is a plan view showing a method of applying an adhesive to the moisture-proof body of the embodiment. Fig. 4 is a partially enlarged plan view showing a method of applying an adhesive to the moisture-proof body of the embodiment. Fig. 5 is a partially enlarged cross-sectional view showing a method of applying an adhesive to the moisture-proof body of the embodiment.

在防濕體15向陣列基板12之接著中,首先,在防濕體15之緣部50與陣列基板12對向之面上,使用塗布機塗布紫外線硬化型之接著劑41、42。至少在緣部50遍及全周塗布2層接著劑41、42。該等係包含:接著劑41,其係至少塗布於緣部50之大致中央;及接著劑42,其以毗連於緣內緣之方式塗布。In the subsequent process of the moisture-proof body 15 to the array substrate 12, first, the ultraviolet-curable adhesives 41 and 42 are applied to the surface of the moisture-proof body 15 opposite to the array substrate 12 by using a coater. Two layers of the adhesives 41, 42 are applied over at least the edge portion 50 over the entire circumference. These include: an adhesive 41 applied at least substantially at the center of the rim 50; and an adhesive 42 applied adjacent to the inner edge of the rim.

接著,將塗布接著劑41、42之防濕體15在減壓環境氣體下按壓至陣列基板12,並壓接兩者。該壓接時之環境氣體係例如為0.1氣壓左右之減壓環境氣體。又,為確保接著層40之厚度之均一化及向接著劑41、42之緣部50之內側之突出,壓接時之接著劑41、42宜係黏度某程度較高者。因此,接著劑41、42向防濕體15之塗布前或塗布後,於壓接前使接著劑硬化至某程度亦可。Next, the moisture-proof body 15 to which the adhesives 41 and 42 are applied is pressed to the array substrate 12 under a reduced-pressure atmosphere, and both are pressure-bonded. The ambient gas system at the time of the pressure bonding is, for example, a reduced-pressure ambient gas of about 0.1 atmosphere. Further, in order to ensure uniformity of the thickness of the adhesive layer 40 and protrusion to the inner side of the edge portion 50 of the adhesives 41 and 42, the adhesives 41 and 42 at the time of pressure bonding are preferably made to have a higher degree of viscosity. Therefore, before or after application of the adhesives 41 and 42 to the moisture-proof body 15, the adhesive may be hardened to some extent before pressure bonding.

如此,藉由製造放射線檢測器11,接著層40之內緣43係可位於比緣部50之內緣53更內側。Thus, by manufacturing the radiation detector 11, the inner edge 43 of the layer 40 can be located further inside than the inner edge 53 of the edge portion 50.

如此,藉由形成防濕構造而完成放射線檢測器11。於該放射線檢測器11之控制線18、資料線19之各端子部26,利用TAB連接使配線相連,且連接於放大器以後之電路,進而組合入框體而完成放射線檢測裝置。Thus, the radiation detector 11 is completed by forming the moisture-proof structure. The control line 18 of the radiation detector 11 and the terminal portions 26 of the data line 19 are connected to each other by a TAB connection, and are connected to a circuit after the amplifier, and are combined into a casing to complete the radiation detecting device.

要使對防濕體15之緣部50塗布接著劑之塗布量及緣部50之寬方向上之塗布位置遍及緣部50之周方向全體完全均一有其困難。此外,藉由塗布量及塗布位置之不均一性以及防濕體15與陣列基板12之傾斜等,在壓接防濕體15與陣列基板12時,存在接著劑之壓扁之狀態不均一之情形。再 者,在接著劑尚未完全硬化之狀態下自減壓環境氣體開放至大氣壓之情形,亦存在藉由外部之大氣壓使接著劑朝靠近內側即閃爍體膜13之方向上移動之可能性。It is difficult to uniformly apply the coating amount of the adhesive agent to the edge portion 50 of the moisture-proof body 15 and the coating position in the width direction of the edge portion 50 over the entire circumferential direction of the edge portion 50. Further, by the unevenness of the coating amount and the coating position, the inclination of the moisture-proof body 15 and the array substrate 12, etc., when the moisture-proof body 15 and the array substrate 12 are crimped, the state in which the adhesive is flattened is not uniform. situation. again In the case where the pressure-reducing ambient gas is opened to the atmospheric pressure in a state where the adhesive agent is not completely cured, there is a possibility that the adhesive moves toward the inner side, that is, the direction of the scintillator film 13 by the external atmospheric pressure.

藉由如此之接著劑之塗布量、塗布位置、壓扁之不均一性、或由壓力差造成接著劑之移動、甚至該等之組合,存在有接著陣列基板12與防濕體15之接著劑之寬度或厚度變得不均一之情形。若此種寬度或厚度之不均一性變得顯著,則存在緣部50與陣列基板12之接著部之周方向上一部分之接著力降低,或耐濕性能劣化之可能性。再者,若接著層40之厚度變薄,則存在陣列基板12之表面之保護膜28與防濕體15接觸之可能性。There is an adhesive which follows the array substrate 12 and the moisture-proof body 15 by the coating amount of the adhesive, the coating position, the unevenness of the flattening, or the movement of the adhesive caused by the pressure difference, or even the combination thereof. The width or thickness becomes uneven. When the unevenness of the width or the thickness becomes remarkable, there is a possibility that the adhesion between a portion of the edge portion 50 and the rear portion of the array substrate 12 in the circumferential direction is lowered, or the moisture resistance performance is deteriorated. Further, when the thickness of the adhesive layer 40 is reduced, there is a possibility that the protective film 28 on the surface of the array substrate 12 comes into contact with the moisture-proof body 15.

又,因陣列基板12、閃爍體膜13及反射體14、與防濕體15之間之空間54係減壓環境氣體,故防濕體15藉由大氣壓被按壓至陣列基板12側,且於防濕體15作用有密接於陣列基板12及閃爍體膜13之方向之力。若藉由該力等,緣部50之內緣53之彎曲加工部按壓至陣列基板12側且變形,則於接著層40產生拉伸應力。存在有藉由該拉伸應力破壞接著層40之可能性。Further, since the space 54 between the array substrate 12, the scintillator film 13, the reflector 14, and the moisture-proof body 15 is decompressed with the atmosphere gas, the moisture-proof body 15 is pressed to the array substrate 12 side by the atmospheric pressure, and The moisture-proof body 15 acts as a force that is in close contact with the array substrate 12 and the scintillator film 13. When the bent portion of the inner edge 53 of the edge portion 50 is pressed against the array substrate 12 side and deformed by the force or the like, tensile stress is generated in the adhesive layer 40. There is a possibility that the adhesion layer 40 is destroyed by the tensile stress.

若藉由接著劑壓扁之不均一性,未硬化之接著劑因大氣壓而流動,或起因於大氣壓等之力對接著層造成破壞,則存在未介隔絕緣性之接著層40而使防濕體15與陣列基板12直接接觸之可能性。If the unhardened adhesive flows due to atmospheric pressure, or the adhesive which is caused by atmospheric pressure or the like causes damage to the adhesive layer, the adhesive layer 40 is not impregnated to prevent moisture. The possibility of the body 15 being in direct contact with the array substrate 12.

圖12係顯示陣列基板之表面之保護膜與防濕體接觸之狀態之例之剖視圖。Fig. 12 is a cross-sectional view showing an example of a state in which a protective film on a surface of an array substrate is in contact with a moisture-proof body.

若防濕體15與陣列基板12直接接觸,則存在保護膜28被破壞,使形成於陣列基板12之金屬配線29與防濕體15直接接觸,造成陣列基板12上之配線短路之可能性。在將形成有閃爍體膜13之陣列基板12與防濕體15之緣部50,介隔紫外線硬化型等之接著劑,例如於減壓環境氣體下接著密封之防濕構造中,於防濕體15之緣部50與陣列基板12之間,確實地形成絕緣性接著劑,且為緩解應力而抑制AL帽自身之變形,在機械性、電性上使其穩定變得重要。When the moisture-proof body 15 is in direct contact with the array substrate 12, the protective film 28 is broken, and the metal wiring 29 formed on the array substrate 12 is in direct contact with the moisture-proof body 15, and the wiring on the array substrate 12 is short-circuited. The edge portion 50 of the array substrate 12 on which the scintillator film 13 is formed and the moisture-proof body 15 are interposed with an ultraviolet curing type or the like, for example, in a moisture-proof structure which is sealed under a reduced-pressure atmosphere gas, and is protected from moisture. An insulating adhesive is reliably formed between the edge portion 50 of the body 15 and the array substrate 12, and deformation of the AL cap itself is suppressed to relieve stress, and it is important to stabilize the mechanical and electrical properties.

本實施形態中,接著防濕體15與陣列基板12之接著層40係使接著層40之內緣43位於比防濕體15之緣部50之內緣53更內側之方式擴展。因此,突出於比接著層40之緣部50之內緣53更內側之硬化部分,抑制防濕體15接近陣列基板12。In the present embodiment, the moisture-proof body 15 and the adhesive layer 40 of the array substrate 12 are extended such that the inner edge 43 of the adhesive layer 40 is located inside the inner edge 53 of the edge portion 50 of the moisture-proof body 15. Therefore, the hardened portion that protrudes further inside than the inner edge 53 of the edge portion 50 of the adhesive layer 40 is prevented from approaching the array substrate 12.

再者,藉由此種突出且硬化之接著劑來填充防濕體15之緣部50之內緣53附近之斜面部52與陣列基板12之間的空隙。其結果,在比緣部50之內緣53更內側處,接著層40係形成有厚度較緣部50及陣列基板12之間更厚之部分。該接著層40之更厚部分係成沿斜面部52隆起之形狀。因此,可固定防濕體15之緣部50附近之彎曲加工部,且抑制由外部大氣壓等造成之防濕體15之變形。其結果,可降低於接著層40產生之拉伸應力。由於如此抑制接著層40所產生之應力,故可降低接著層40剝離之可能性。Further, the gap between the slope portion 52 in the vicinity of the inner edge 53 of the edge portion 50 of the moistureproof body 15 and the array substrate 12 is filled by such a protruding and hardened adhesive. As a result, the layer 40 is formed to have a thicker portion than the edge portion 50 and the array substrate 12, further than the inner edge 53 of the edge portion 50. The thicker portion of the adhesive layer 40 is shaped to bulge along the slope portion 52. Therefore, the bent portion in the vicinity of the edge portion 50 of the moistureproof body 15 can be fixed, and the deformation of the moistureproof body 15 caused by the external atmospheric pressure or the like can be suppressed. As a result, the tensile stress generated in the adhesive layer 40 can be lowered. Since the stress generated by the adhesive layer 40 is suppressed as described above, the possibility of peeling of the adhesive layer 40 can be reduced.

又,藉由使接著層40之內緣43毗連於閃爍體膜13,在閃爍體膜13之外邊與防濕體15之緣部50之間,陣列基板12之 表面係被接著層40覆蓋,防濕體15與陣列基板12接觸之可能性變得極小。尤其,若接著層40之內緣43遍及全周皆毗連於閃爍體膜13,則由於閃爍體膜13之外邊與防濕體15之緣部之間之陣列基板12之表面完全被接著層40覆蓋,故效果佳。Further, by arranging the inner edge 43 of the adhesive layer 40 adjacent to the scintillator film 13, between the outer edge of the scintillator film 13 and the edge portion 50 of the moistureproof body 15, the array substrate 12 The surface is covered by the adhesive layer 40, and the possibility of the moisture-proof body 15 coming into contact with the array substrate 12 becomes extremely small. In particular, if the inner edge 43 of the adhesive layer 40 is adjacent to the scintillator film 13 throughout the entire circumference, the surface of the array substrate 12 between the outer edge of the scintillator film 13 and the edge of the moisture-proof body 15 is completely covered by the layer 40. Coverage, so the effect is good.

如此,本實施形態中,由於接著層40之機械強度增加,故成高可靠性之防濕構造。此外,尤其在使用鋁等金屬作為防濕體15之情形下,可抑制防濕體15與陣列基板12上之配線間之電性短路之可能性。其結果,可提升放射線檢測器11之製造時及其後之使用中之健全性。As described above, in the present embodiment, since the mechanical strength of the adhesive layer 40 is increased, a highly reliable moisture-proof structure is obtained. Further, particularly in the case where a metal such as aluminum is used as the moisture-proof body 15, the possibility of electrical short-circuit between the moisture-proof body 15 and the wiring on the array substrate 12 can be suppressed. As a result, the soundness of the radiation detector 11 at the time of manufacture and subsequent use can be improved.

又,如本實施形態之製造方法,藉由以在緣部50之中央部與緣部50之內緣53進行至少2層塗布之多層塗布法,向防濕體15之緣部50塗布接著劑,可改善接著劑彼此之連結。再者,可以更高精度控制防濕體15之緣部50之外側及內側之接著劑之突出量。Further, in the manufacturing method of the present embodiment, the adhesive is applied to the edge portion 50 of the moistureproof body 15 by a multilayer coating method in which at least two layers are applied to the inner edge 53 of the edge portion 50 and the inner edge 53 of the edge portion 50. It can improve the bonding of the adhesives to each other. Further, the amount of protrusion of the adhesive on the outer side and the inner side of the edge portion 50 of the moistureproof body 15 can be controlled with higher precision.

若將多層塗布接著劑之防濕體15與令閃爍體膜13及反射膜14一體化之陣列基板12,在減壓環境氣體下接著並密封,則塗布於緣部50之中央部之接著劑41係被緣部50按壓而擴展,且形成厚度均一之接著層40,塗布於緣部50之內緣53之接著劑42係擴展於緣部50之中央方向且連接於塗布於中央部之接著劑,並突出至緣部50之內側。When the moisture-proof body 15 of the multilayer application adhesive is bonded to the array substrate 12 in which the scintillator film 13 and the reflection film 14 are integrated, and then sealed under a reduced-pressure atmosphere, the adhesive applied to the central portion of the edge portion 50 is applied. The 41 is pressed by the edge portion 50 to expand, and a uniform thickness layer 40 is formed. The adhesive 42 applied to the inner edge 53 of the edge portion 50 is extended in the center direction of the edge portion 50 and is attached to the center portion. The agent protrudes to the inner side of the rim 50.

又,藉由使用此種塗布2層接著劑41、42之方法,即使在接著劑未硬化之狀態下開放大氣之情形,亦可抑制因接著劑流動所造成之接著劑薄膜化。在塗布1層接著劑之方 法中,為在壓接時令接著劑充分擴散,確保接著層之寬度,必需先將接著劑之黏度縮小至某個程度。Moreover, by using such a method of applying the two-layer adhesives 41 and 42, even if the atmosphere is opened in a state where the adhesive is not cured, it is possible to suppress thinning of the adhesive due to the flow of the adhesive. On the side of applying a layer of adhesive In the method, in order to sufficiently diffuse the adhesive at the time of crimping and to secure the width of the adhesive layer, it is necessary to first reduce the viscosity of the adhesive to a certain extent.

但,在本實施形態之塗布多層接著劑之方法中,因可在壓接前擴展接著劑之形成面積,故即使高黏度之接著劑亦可形成良好之接著層40。接著劑之黏度高者流動性降低,故可抑制外部大氣壓造成之接著劑流動。接著劑之黏度係可藉由調整材料自身之樹脂黏度來提高。或在紫外線硬化型接著劑之情形,可藉由增加壓接前之紫外線照射量,使之高黏度化。However, in the method of applying the multilayer adhesive of the present embodiment, since the formation area of the adhesive can be expanded before the pressure bonding, a good adhesion layer 40 can be formed even with a high-viscosity adhesive. When the viscosity of the agent is high, the fluidity is lowered, so that the flow of the adhesive caused by the external atmospheric pressure can be suppressed. The viscosity of the subsequent agent can be increased by adjusting the resin viscosity of the material itself. Or in the case of an ultraviolet curing type adhesive, it is possible to increase the viscosity by increasing the amount of ultraviolet irradiation before the pressure bonding.

在単將接著劑塗布1層於防濕體15之緣部50之情形、與塗布2層之情形,觀察以同等壓接力壓接時之接著層40之厚度。其結果,在塗布1層之情形,相對於接著層之厚度之平均值為50 μm,觀察到存在有最薄部之厚度為15 μm左右的部分。另一方面,在以本實施形態之方式塗布2層接著劑之情形,接著層40之厚度之差異較小,最薄部之膜厚亦確保在50 μm以上。如此可知本實施形態中,於接著層40難以產生較薄部分,且在緣部50遍及全周皆可形成具足夠厚度之接著層40。In the case where the adhesive was applied to the edge portion 50 of the moisture-proof body 15 and the two layers were applied, the thickness of the adhesive layer 40 when crimped with the same pressure contact force was observed. As a result, in the case of coating one layer, the average value of the thickness of the adhesive layer was 50 μm, and it was observed that the portion having the thinnest portion having a thickness of about 15 μm was observed. On the other hand, in the case where two layers of the adhesive are applied as in the present embodiment, the difference in thickness of the subsequent layer 40 is small, and the film thickness of the thinnest portion is also ensured to be 50 μm or more. As described above, in the present embodiment, it is difficult to form a thin portion in the adhesive layer 40, and the adhesive layer 40 having a sufficient thickness can be formed over the entire periphery of the edge portion 50.

如上所述,利用藉由接著劑之多層塗布達成接著層40突出於防濕體內側之構成,可使機械性強度增加,確保基板金屬配線之絕緣性,而可提供一種具有高防濕性能與可靠性之放射線檢測器。As described above, by forming a structure in which the adhesive layer 40 protrudes inside the moisture-proof body by multilayer coating by an adhesive, mechanical strength can be increased to ensure insulation of the substrate metal wiring, and a high moisture-proof property can be provided. Radiation detector for reliability.

如此,利用藉由接著劑之多層塗布達成接著劑突出於AL帽內側之構成,可使機械性強度增加,確保基板金屬 配線之絕緣性,而可提供一種具有高防濕性能與可靠性之放射線檢測器。Thus, by using a multilayer coating of an adhesive to achieve a structure in which the adhesive protrudes inside the AL cap, the mechanical strength can be increased to ensure the substrate metal. The insulation of the wiring provides a radiation detector with high moisture resistance and reliability.

此外,並非僅有使用鋁或鋁合金作為防濕體15之材料之情形,使用其他金屬材料之情形亦相同。但由於在鋁或鋁合金之箔之情形下,作為金屬材料之X射線吸收係數特別小,故在可抑制防濕體15內之X射線吸收損耗之點上優勢較大,且在加工成帽狀之情形亦有優秀之加工性。Further, it is not the case that only aluminum or an aluminum alloy is used as the material of the moisture-proof body 15, and the case of using other metal materials is also the same. However, since the X-ray absorption coefficient as a metal material is particularly small in the case of a foil of aluminum or aluminum alloy, it is advantageous in that it can suppress the X-ray absorption loss in the moisture-proof body 15, and is processed into a cap. The situation is also excellent in processing.

防濕體15向陣列基板12之接著係在減壓環境氣體下進行,在原以設想飛機運輸之減壓環境下,對於可形成機械性強度優秀之防濕構造之點亦有效。即使在大氣壓下進行防濕體15向陣列基板12接著之情形,為確保足夠之接著層厚度與接著層寬度,使用如本實施形態之塗布2層之方法亦為有效。The moisture-proof body 15 is applied to the array substrate 12 under a reduced-pressure atmosphere, and is also effective in forming a moisture-proof structure excellent in mechanical strength under a reduced pressure environment in which the aircraft is supposed to be transported. Even when the moisture-proof body 15 is brought to the array substrate 12 under atmospheric pressure, it is effective to use the method of coating two layers as in the present embodiment in order to secure a sufficient thickness of the adhesive layer and the width of the adhesive layer.

接著劑41、42不塗布於防濕體15,取而代之塗布於陣列基板12側亦可。即使使用此種方法,藉由在對應防濕體15之緣部50之中央部與緣部50之內緣53之部位進行多層塗布,亦可取得與將接著劑41、42塗布於防濕體15之情形相同之效果。但,於陣列基板12側塗布接著劑之情形係因受防濕體15與陣列基板12貼合之位置偏離之影響較大,故向防濕體15側塗布接著劑之方法在製程穩定化之點上更為優秀。The subsequent agents 41 and 42 are not applied to the moisture-proof body 15 and may be applied to the array substrate 12 side instead. Even if this method is used, by applying a plurality of layers to the central portion of the edge portion 50 of the moisture-proof body 15 and the inner edge 53 of the edge portion 50, it is possible to obtain the adhesion of the adhesives 41 and 42 to the moisture-proof body. The same effect is achieved in the case of 15. However, when the adhesive is applied to the array substrate 12 side, the influence of the positional deviation of the moisture-proof body 15 and the array substrate 12 is large, so that the method of applying the adhesive to the moisture-proof body 15 side is stabilized in the process. The point is even better.

雖然對本發明之一實施形態加以說明,但該實施形態係僅作為一例而加以提示者,並非意欲限定發明之範圍。該新穎之實施形態係可以其他多種形態來實施,在未脫離發 明主旨之範圍內,亦可進行各種省略、置換、及變更。該實施形態或其變形係包含於發明之範圍或主旨內,且涵蓋於與專利申請之範圍均等之範圍內。Although an embodiment of the present invention has been described, the embodiment is presented by way of example only and is not intended to limit the scope of the invention. The novel embodiment can be implemented in a variety of other forms, without departing from the hair Various omissions, substitutions, and changes may be made within the scope of the subject matter. This embodiment or its modifications are intended to be included within the scope and spirit of the invention and are intended to be included within the scope of the invention.

10‧‧‧放射線檢測裝置10‧‧‧radiation detection device

11‧‧‧放射線檢測器11‧‧‧radiation detector

12‧‧‧陣列基板12‧‧‧Array substrate

13‧‧‧閃爍體膜13‧‧‧Scintillator film

14‧‧‧反射膜14‧‧‧Reflective film

15‧‧‧防濕體15‧‧‧Damps

16‧‧‧玻璃基板16‧‧‧ glass substrate

17‧‧‧光電轉換部17‧‧‧Photoelectric Conversion Department

18‧‧‧控制線18‧‧‧Control line

19‧‧‧資料線19‧‧‧Information line

20‧‧‧像素20‧‧ ‧ pixels

21‧‧‧光電二極體21‧‧‧Photoelectric diode

22‧‧‧薄膜電晶體22‧‧‧film transistor

23‧‧‧閘電極23‧‧‧ gate electrode

24‧‧‧源電極24‧‧‧ source electrode

25‧‧‧汲電極25‧‧‧汲 electrode

26‧‧‧端子群26‧‧‧Terminal group

27‧‧‧蓄積電容器27‧‧‧Accumulation capacitor

28‧‧‧保護膜28‧‧‧Protective film

29‧‧‧金屬配線29‧‧‧Metal wiring

30‧‧‧電路基板30‧‧‧ circuit board

31‧‧‧支持板31‧‧‧Support board

32‧‧‧可撓性基板32‧‧‧Flexible substrate

33‧‧‧積分放大器33‧‧‧Integral amplifier

34‧‧‧A/D轉換器34‧‧‧A/D converter

35‧‧‧列選擇電路35‧‧‧ column selection circuit

36‧‧‧圖像合成電路36‧‧‧Image Synthesis Circuit

38‧‧‧並聯/串聯轉換器38‧‧‧ parallel/serial converter

39‧‧‧閘極驅動器39‧‧‧gate driver

40‧‧‧接著層40‧‧‧Next layer

41‧‧‧接著劑41‧‧‧Adhesive

42‧‧‧接著劑42‧‧‧Adhesive

43‧‧‧內緣43‧‧‧ inner edge

50‧‧‧緣部50‧‧‧Edge

51‧‧‧頂板部51‧‧‧ top board

52‧‧‧斜面部52‧‧‧Bevel

53‧‧‧內緣53‧‧‧ inner edge

54‧‧‧空間54‧‧‧ Space

圖1係一實施形態之防濕體之緣部附近之擴大剖視圖。Fig. 1 is an enlarged cross-sectional view showing the vicinity of an edge portion of a moistureproof body according to an embodiment.

圖2係一實施形態之防濕體之緣部附近之擴大俯視圖。Fig. 2 is an enlarged plan view showing the vicinity of the edge portion of the moistureproof body of the embodiment.

圖3係顯示向一實施形態之防濕體塗布接著劑之方法之俯視圖。Fig. 3 is a plan view showing a method of applying an adhesive to a moisture-proof body of an embodiment.

圖4係顯示向一實施形態之防濕體塗布接著劑之方法之局部擴大俯視圖。Fig. 4 is a partially enlarged plan view showing a method of applying an adhesive to a moisture-proof body of an embodiment.

圖5係顯示向一實施形態之防濕體塗布接著劑之方法之局部擴大剖視圖。Fig. 5 is a partially enlarged cross-sectional view showing a method of applying an adhesive to a moisture-proof body of an embodiment.

圖6係一實施形態之放射線檢測裝置之模式化立體圖。Fig. 6 is a schematic perspective view of a radiation detecting apparatus according to an embodiment.

圖7係一實施形態之放射線檢測器之電路圖。Fig. 7 is a circuit diagram of a radiation detector of an embodiment.

圖8係一實施形態之放射線檢測裝置之方塊圖。Fig. 8 is a block diagram showing a radiation detecting apparatus of an embodiment.

圖9係一實施形態之放射線檢測器之局部擴大剖視圖。Fig. 9 is a partially enlarged cross-sectional view showing a radiation detector of an embodiment.

圖10係一實施形態之放射線檢測器之上表面圖。Figure 10 is a top plan view of a radiation detector of an embodiment.

圖11係一實施形態之放射線檢測器之側視圖。Figure 11 is a side view of a radiation detector of an embodiment.

圖12係顯示陣列基板之表面之保護膜與防濕體接觸之狀態之例之剖視圖。Fig. 12 is a cross-sectional view showing an example of a state in which a protective film on a surface of an array substrate is in contact with a moisture-proof body.

11‧‧‧放射線檢測器11‧‧‧radiation detector

13‧‧‧閃爍體膜13‧‧‧Scintillator film

14‧‧‧反射膜14‧‧‧Reflective film

15‧‧‧防濕體15‧‧‧Damps

16‧‧‧玻璃基板16‧‧‧ glass substrate

28‧‧‧保護膜28‧‧‧Protective film

29‧‧‧金屬配線29‧‧‧Metal wiring

40‧‧‧接著層40‧‧‧Next layer

43‧‧‧內緣43‧‧‧ inner edge

50‧‧‧緣部50‧‧‧Edge

51‧‧‧頂板部51‧‧‧ top board

52‧‧‧斜面部52‧‧‧Bevel

53‧‧‧內緣53‧‧‧ inner edge

54‧‧‧空間54‧‧‧ Space

Claims (6)

一種放射線檢測器,其特徵在於包含:陣列基板,其係設有排列有將螢光轉換成電性訊號之光電轉換元件之光電轉換元件層;閃爍體膜,其係以覆蓋上述光電轉換元件層之方式設置於上述陣列基板之表面,且將放射線轉換成螢光;防濕體,其具備與上述陣列基板對向且包圍上述閃爍體膜之緣部,並覆蓋上述閃爍體膜;及接著層,其係使上述緣部與上述陣列基板接著,且其內緣遍及全周位於比上述緣部更內側。A radiation detector comprising: an array substrate provided with a photoelectric conversion element layer in which photoelectric conversion elements for converting fluorescent light into electrical signals are arranged; and a scintillator film covering the photoelectric conversion element layer The method is disposed on a surface of the array substrate and converts the radiation into a fluorescent light; the moistureproof body includes an edge portion that faces the array substrate and surrounds the scintillator film, and covers the scintillator film; and an adhesive layer The edge portion is connected to the array substrate, and the inner edge thereof is located further inside than the edge portion over the entire circumference. 如請求項1之放射線檢測器,其中比上述接著層之上述緣部更內側之部分係比上述緣部與上述陣列基板之間之部分更厚。A radiation detector according to claim 1, wherein a portion further inside than said edge portion of said adhesive layer is thicker than a portion between said edge portion and said array substrate. 如請求項1或2之放射線檢測器,其中上述防濕體係以金屬形成。A radiation detector according to claim 1 or 2, wherein said moisture-proof system is formed of a metal. 如請求項1或2之放射線檢測器,其中上述接著層係紫外線硬化型之絕緣性樹脂接著劑及熱硬化型之絕緣性樹脂接著劑之任一者。The radiation detector according to claim 1 or 2, wherein the adhesive layer is any one of an ultraviolet curable insulating resin adhesive and a thermosetting insulating resin adhesive. 如請求項3之放射線檢測器,其中上述接著層係紫外線硬化型之絕緣性樹脂接著劑及熱硬化型之絕緣性樹脂接著劑之任一者。The radiation detector according to claim 3, wherein the adhesive layer is any one of an ultraviolet curable insulating resin adhesive and a thermosetting insulating resin adhesive. 一種放射線檢測器之製造方法,其特徵在於包含:形成閃爍體層之步驟,該閃爍體層係在設有排列有將螢光轉換成電性訊號之光電轉換元件之光電轉換元件層 之基板之表面,以覆蓋上述光電轉換元件層之方式形成將放射線轉換成螢光之上述閃爍體層;塗布步驟,其係於周圍形成有帶狀之緣部之防濕體之上述緣部、及較上述防濕體之上述緣部更內側,至少塗布2層接著劑;接著步驟,其係在上述塗布步驟之後,將上述緣部之塗布有上述接著劑之面在減壓環境氣體下按壓至較上述基板之上述閃爍體膜更外側之部分;及硬化步驟,其係使上述接著劑硬化。A method of manufacturing a radiation detector, comprising: forming a scintillator layer, wherein the scintillator layer is provided with a photoelectric conversion element layer in which a photoelectric conversion element that converts fluorescence into an electrical signal is disposed a surface of the substrate, the scintillator layer for converting radiation into fluorescence is formed to cover the photoelectric conversion element layer, and a coating step is performed on the edge portion of the moisture-proof body having a band-shaped edge portion around, and Applying at least two layers of the adhesive agent to the inner side of the edge portion of the moisture-proof body; and subsequently, after the coating step, pressing the surface of the edge portion coated with the adhesive agent under a reduced-pressure atmosphere gas a portion outside the scintillator film of the substrate; and a hardening step of hardening the adhesive.
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