TWI591368B - Radiation detector and manufacturing method thereof - Google Patents
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- FVAUCKIRQBBSSJ-UHFFFAOYSA-M sodium iodide Chemical compound [Na+].[I-] FVAUCKIRQBBSSJ-UHFFFAOYSA-M 0.000 description 2
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- NZYNBTBHDHZVJJ-UHFFFAOYSA-N O=S.[Sr] Chemical compound O=S.[Sr] NZYNBTBHDHZVJJ-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Measurement Of Radiation (AREA)
Description
本申請案基於日本專利申請案、特願2013-119455(申請日:2013年6月6日),自該申請案享有優先之利益。本申請案藉由參照該申請案而包含該申請案之全部內容。 This application is based on the Japanese Patent Application, Japanese Patent Application No. 2013-119455 (application date: June 6, 2013), and has priority from this application. This application contains the entire contents of this application by reference to this application.
實施形態大體上係關於一種放射線檢測器之製造方法及放射線檢測器。 The embodiment is generally directed to a method of manufacturing a radiation detector and a radiation detector.
作為新一代之X射線診斷用檢測器,開發出一種使用主動矩陣之平面形X射線檢測器。藉由對照射至該X射線檢測器之X射線進行檢測,而將X射線攝影圖像、或即時之X射線圖像以數位信號之形式輸出。於該X射線檢測器中,藉由閃爍體層使X射線轉換為可見光即螢光,並利用非晶矽(a-Si)光電二極體、CMOS(Complementary Metal Oxide Semiconductor,互補式金屬氧化物半導體)感測器、或CCD(Charge Coupled Device,電荷耦合器件)等光電轉換元件將該螢光轉換為信號電荷,藉此取得圖像。 As a new generation of X-ray diagnostic detectors, a planar X-ray detector using an active matrix has been developed. The X-ray image or the instantaneous X-ray image is output as a digital signal by detecting the X-rays irradiated to the X-ray detector. In the X-ray detector, X-rays are converted into visible light or fluorescence by a scintillator layer, and an amorphous germanium (a-Si) photodiode or a CMOS (Complementary Metal Oxide Semiconductor) is used. A photoelectric conversion element such as a sensor or a CCD (Charge Coupled Device) converts the fluorescence into a signal charge, thereby acquiring an image.
作為閃爍體層之材料,通常使用碘化銫(CsI):鈉(Na)、碘化銫(CsI):鉈(Tl)、碘化鈉(NaI)或氧硫化釓(Gd2O2S)等。閃爍體層係藉由切割等形成溝槽,或者藉由蒸鍍法以形成柱狀構造之方式進行堆積,藉此可提高解像度特性。作為閃爍體之材料,如上所述般有各種材料,根據用途或所需之特性分別使用。 As a material of the scintillator layer, cesium iodide (CsI) is usually used: sodium (Na), cesium iodide (CsI): strontium (Tl), sodium iodide (NaI) or strontium oxysulfide (Gd 2 O 2 S). . The scintillator layer is formed by dicing or the like, or deposited by vapor deposition to form a columnar structure, whereby the resolution characteristics can be improved. As the material of the scintillator, various materials are used as described above, and are used depending on the use or the desired characteristics.
為了提高螢光之利用效率而改善感度特性,存在於閃爍體層之 上表面形成反射膜之情形。即,藉由反射膜使於閃爍體層發光之螢光中之朝向光電轉換元件之相反側的螢光反射,從而使到達至光電轉換元件側之螢光增多。 In order to improve the utilization efficiency of the fluorescent light and improve the sensitivity characteristics, it exists in the scintillator layer. A case where a reflective film is formed on the upper surface. In other words, the fluorescent light that is emitted toward the opposite side of the photoelectric conversion element in the fluorescent light that is emitted from the scintillator layer is reflected by the reflection film, so that the amount of fluorescence reaching the photoelectric conversion element side is increased.
反射膜係藉由如下等方法而形成:於閃爍體層上成膜銀合金或鋁等螢光反射率較高之金屬層之方法、或塗佈包含TiO2等光散射性物質與黏合劑樹脂之光散射反射性之反射膜並進行乾燥之方法。又,不形成於閃爍體層上,而使鋁等具有金屬表面之反射板密接於閃爍體層而使閃爍體光反射之方式亦正被實用化。 The reflective film is formed by a method of forming a metal layer having a high fluorescence reflectance such as a silver alloy or aluminum on a scintillator layer, or coating a light-scattering substance such as TiO 2 and a binder resin. A method of light scattering a reflective reflective film and drying it. Further, it is not formed on the scintillator layer, and a method in which a reflector having a metal surface such as aluminum is adhered to the scintillator layer to reflect the scintillator light is also put into practical use.
用以保護閃爍體層或反射層(或者反射板等)不受外部氛圍損害而抑制因濕度等導致特性劣化之防濕構造係於使檢測器成為實用性製品之方面而言為重要之構成要素。尤其是於將作為相對於濕度劣化較大之材料之CsI:Tl膜或CsI:Na膜作為閃爍體層之情形時,要求較高之防濕性能。 The moisture-proof structure for protecting the scintillator layer or the reflective layer (or the reflecting plate or the like) from the external atmosphere and suppressing deterioration of characteristics due to humidity or the like is an important component for making the detector a practical product. In particular, when a CsI:Tl film or a CsI:Na film which is a material which deteriorates greatly with respect to humidity is used as a scintillator layer, high moisture resistance is required.
作為防濕構造,有使用聚對二甲苯(Poly-para-Xylylene)(以下簡略記載為parylene)之CVD(Chemical Vapor Deposition,化學氣相沈積)膜之方法、或藉由包圍構件包圍閃爍體之周圍並利用與防濕層之組合進行密封之構造等。作為可獲得更高之防濕性能之構造,已知有如下等構造:將防濕性能優異之鋁箔等加工成包含閃爍體層之帽狀,並將其凸緣部與基板接著密封。利用該防濕構造,於在接著層使用添加有無機填料之密封材料之情形時,亦可獲得更優異之防濕性能。 As the moisture-proof structure, there is a method of using a CVD (Chemical Vapor Deposition) film of poly-para-Xylylene (hereinafter briefly described as parylene), or surrounding the scintillator by a surrounding member. The structure in which the seal is sealed by a combination with the moisture-proof layer is used. As a structure which can obtain a higher moisture-proof performance, an aluminum foil or the like having excellent moisture-proof performance is processed into a cap shape including a scintillator layer, and the flange portion and the substrate are then sealed. According to the moisture-proof structure, when the sealing material to which the inorganic filler is added is used in the subsequent layer, more excellent moisture-proof performance can be obtained.
使用包含閃爍體層之帽形狀等之防濕體並將防濕體之凸緣部及基板接著密封之防濕構造於可確保較高之防濕性能方面明顯較其他方法優異。於該防濕構造中,為了充分穩定地確保帽形狀等之防濕體之凸緣部與基板之密封性,且保證較高之可靠性,較為重要的是充分地增大介置於防濕體之凸緣部與基板之間之接著劑之塗佈量,此外充分 地增大用以使凸緣部與基板密接之加壓力。 The moisture-proof structure including the moisture-proof body such as the cap shape of the scintillator layer and the flange portion and the substrate which are sealed next to the moisture-proof body is remarkably superior to other methods in terms of ensuring high moisture-proof performance. In the moisture-proof structure, in order to sufficiently ensure the sealing property between the flange portion of the moisture-proof body such as the cap shape and the substrate, and to ensure high reliability, it is important to sufficiently increase the interposition of the moisture-proof body. The amount of the adhesive applied between the flange portion and the substrate is sufficient The pressing force for bringing the flange portion into close contact with the substrate is increased.
然而,若滿足此種2個條件,則必然地接著劑會自防濕體之凸緣部溢出,而於凸緣部之周邊之基板上形成過剩之接著層之溢出(擴展)。若該接著層之溢出到達至形成於防濕構造之周邊部之基板上之電極連接用引出片焊墊(TAB Pad)部等,則無法實現焊墊部與FPC(Flexible Print Circuit,可撓性印刷基板)之連接。 However, if these two conditions are satisfied, the adhesive will inevitably overflow from the flange portion of the moisture-proof body, and an overflow (expansion) of the excess adhesive layer may be formed on the substrate around the flange portion. When the overflow of the adhesive layer reaches the electrode connection tab pad (TAB Pad) formed on the substrate of the peripheral portion of the moisture-proof structure, the pad portion and the FPC (Flexible Print Circuit) cannot be realized. Connection of printed substrate).
為了避免此種不良情況,必須於防濕體之凸緣部之外側端與電極連接用(引出片(TAB)等)之焊墊(Pad)之間設置一定以上之間隔。考慮到防濕體與基板之貼合之位置偏差(例如±1mm左右)、及接著劑之溢出寬度(例如最大為3mm左右),必需如下設計:將防濕體之帽檐部外側端與電極連接用(TAB等)之Pad部之間隔確保為例如4mm以上。於電極連接用(TAB等)之Pad部於信號線側(通常為X-TAB)與控制線側(通常為Y-TAB)分別位於兩側之情形時,為了達成上述目的,例如必須縱橫分別為8mm之尺寸。 In order to avoid such a problem, it is necessary to provide a certain interval or more between the outer end of the flange portion of the moisture-proof body and the pad (Pad) for electrode connection (lead sheet (TAB) or the like). Considering the positional deviation of the adhesion between the moisture-proof body and the substrate (for example, about ±1 mm) and the overflow width of the adhesive (for example, about 3 mm at the maximum), it is necessary to design the outer end of the cap portion of the moisture-proof body to be connected to the electrode. The interval between the Pad portions (TAB or the like) is ensured to be, for example, 4 mm or more. In the case where the Pad portion for electrode connection (TAB or the like) is located on both sides of the signal line side (usually X-TAB) and the control line side (usually Y-TAB), in order to achieve the above object, for example, it is necessary to vertically and horizontally respectively It is 8mm in size.
此種防濕體周邊部所需之尺寸相對於相同之有效像素區域或形成於其上之閃爍體層之區域尺寸,會使作為放射線檢測器之外形尺寸增大,從而阻礙作為放射線檢測器之小型化設計。又,放射線檢測器之整體尺寸過分地變大會導致檢測器之重量亦過分地增大。於尤其要求輕量化及小型化設計之可攜型(portable)放射線檢測器等中,成為重大之缺陷。 The size required for the peripheral portion of such a moisture-proof body relative to the same effective pixel area or the size of the region of the scintillator layer formed thereon may increase the size outside the radiation detector, thereby hindering the small size as a radiation detector. Design. Moreover, the overall size of the radiation detector is excessively variable, resulting in an excessive increase in the weight of the detector. It is a major drawback in portable radiological detectors that are particularly lightweight and compact.
為了抑制接著層之溢出,而考慮減少接著劑之塗佈量、或減弱加壓力之方法,但於該情形時,防濕體之凸緣部與基板之接著密封容易變得不充分,從而高溫高濕試驗或冷熱環境下之接著部之可靠性容易產生問題。 In order to suppress the overflow of the adhesive layer, a method of reducing the amount of application of the adhesive or reducing the pressing force is considered. However, in this case, the sealing of the flange portion of the moisture-proof body and the substrate is likely to be insufficient, and thus the temperature is high. The reliability of the high-humidity test or the joint in a hot and cold environment is prone to problems.
因此,實施形態之目的在於維持防濕構造之可靠性,並且使放射線檢測器小型化。 Therefore, the purpose of the embodiment is to maintain the reliability of the moisture-proof structure and to downsize the radiation detector.
為了達成上述目的,實施形態之放射線檢測器之製造方法之特徵在於包括:陣列基板形成步驟,其形成陣列基板,該陣列基板係於基板上二維地排列光電轉換元件而成;閃爍體層形成步驟,其形成閃爍體層,該閃爍體層覆蓋上述陣列基板之排列有上述光電轉換元件之區域,且將放射線轉換為螢光;防濕體形成步驟,其係使金屬成形而形成防濕體,該防濕體包括與上述陣列基板之包圍上述閃爍體層之部分相對向之接著面;及接著步驟,其係以於上述接著面(凸緣部)與上述陣列基板之間之對向接著部及該對向接著部自上述凸緣部之外緣溢出至外側之區域,形成接著劑自上述陣列基板較上述凸緣部更高地突出之溢出部之方式,藉由具有邊框部之加壓治具對上述凸緣部進行加壓,而使上述防濕體與上述陣列基板接著,上述邊框部形成有與上述凸緣部之上述對向接著部之相反側之面相對向之加壓面。 In order to achieve the above object, a method of manufacturing a radiation detector according to an embodiment is characterized by comprising: an array substrate forming step of forming an array substrate, wherein the array substrate is formed by two-dimensionally arranging photoelectric conversion elements on a substrate; and a scintillator layer forming step Forming a scintillator layer covering the region of the array substrate on which the photoelectric conversion element is arranged and converting the radiation into fluorescence; and the moisture-proof body forming step of forming the metal to form a moisture-proof body, the prevention The wet body includes a surface opposite to a portion of the array substrate surrounding the scintillator layer; and a subsequent step of the opposite end portion between the bonding surface (flange portion) and the array substrate and the pair a region in which the adhesive portion overflows from the outer edge of the flange portion to the outer side, and an overflow portion in which the adhesive agent protrudes higher from the flange portion than the flange portion is formed, and the pressure jig having the frame portion is used to The flange portion is pressurized, and the moistureproof body is connected to the array substrate, and the frame portion is formed with the flange portion Relative to the pressing surface toward the opposite side of the surface portion of the next.
又,實施形態之放射線檢測器之特徵在於包括:陣列基板,其係於基板上二維地排列光電轉換元件而成;閃爍體層,其覆蓋上述陣列基板之排列有上述光電轉換元件之區域,且將放射線轉換為螢光;防濕體,其係覆蓋上述閃爍體層之金屬之成形體,且包括與上述陣列基板之包圍上述閃爍體層之部分相對向之凸緣部;及接著層,其於上述凸緣部與上述陣列基板之間之對向接著部及該對向接著部自上述凸緣部之外緣溢出至外側之區域,具有自上述陣列基板較上述凸緣部更高地突出之溢出部,而使上述防濕體與上述陣列基板接著。 Further, the radiation detector of the embodiment includes: an array substrate obtained by two-dimensionally arranging photoelectric conversion elements on a substrate; and a scintillator layer covering a region of the array substrate on which the photoelectric conversion element is arranged, and Converting radiation into fluorescent light; a moisture-proof body covering a metal formed body of the scintillator layer, and including a flange portion opposed to a portion of the array substrate surrounding the scintillator layer; and an adhesive layer An opposing portion between the flange portion and the array substrate and a region where the opposite end portion overflows from the outer edge of the flange portion to the outside has an overflow portion that protrudes higher from the array substrate than the flange portion And the moisture-proof body is connected to the array substrate.
根據上述實施形態,可維持防濕構造之可靠性,且可使放射線檢測器小型化。 According to the above embodiment, the reliability of the moisture-proof structure can be maintained, and the radiation detector can be downsized.
10‧‧‧放射線檢測裝置 10‧‧‧radiation detection device
11‧‧‧放射線檢測器 11‧‧‧radiation detector
12‧‧‧陣列基板 12‧‧‧Array substrate
13‧‧‧閃爍體層 13‧‧‧ scintillation layer
14‧‧‧反射膜 14‧‧‧Reflective film
15‧‧‧防濕體 15‧‧‧Damps
16‧‧‧玻璃基板 16‧‧‧ glass substrate
18‧‧‧控制線 18‧‧‧Control line
19‧‧‧資料線 19‧‧‧Information line
20‧‧‧像素 20‧‧ ‧ pixels
21‧‧‧光電二極體 21‧‧‧Photoelectric diode
22‧‧‧薄膜電晶體 22‧‧‧film transistor
23‧‧‧閘極電極 23‧‧‧gate electrode
24‧‧‧源極電極 24‧‧‧Source electrode
25‧‧‧汲極電極 25‧‧‧汲electrode
26‧‧‧端子群 26‧‧‧Terminal group
27‧‧‧儲存電容器 27‧‧‧Storage capacitor
28‧‧‧保護膜 28‧‧‧Protective film
29‧‧‧焊墊 29‧‧‧ solder pads
30‧‧‧電路基板 30‧‧‧ circuit board
31‧‧‧支持板 31‧‧‧Support board
32‧‧‧可撓性基板 32‧‧‧Flexible substrate
33‧‧‧積分放大器 33‧‧‧Integral amplifier
34‧‧‧A/D轉換器 34‧‧‧A/D converter
35‧‧‧列選擇電路 35‧‧‧ column selection circuit
36‧‧‧圖像合成電路 36‧‧‧Image Synthesis Circuit
38‧‧‧並聯/串聯轉換器 38‧‧‧ parallel/serial converter
39‧‧‧閘極驅動器 39‧‧‧gate driver
50‧‧‧凸緣部 50‧‧‧Flange
51‧‧‧頂板部 51‧‧‧ top board
52‧‧‧斜面部 52‧‧‧Bevel
62‧‧‧引線 62‧‧‧ lead
80‧‧‧接著托盤 80‧‧‧Next tray
81‧‧‧邊框部 81‧‧‧Border Department
82‧‧‧凹部 82‧‧‧ recess
84‧‧‧接著托盤 84‧‧‧Next tray
85‧‧‧邊框部 85‧‧‧Border Department
86‧‧‧凹部 86‧‧‧ recess
90‧‧‧接著層 90‧‧‧Next layer
91‧‧‧對向接著部 91‧‧‧ opposite head
92‧‧‧溢出部 92‧‧‧Overflow
93‧‧‧迴繞部 93‧‧‧Rewinding Department
94‧‧‧接著劑 94‧‧‧Binder
圖1係一實施形態之放射線檢測裝置之模式性立體圖。 Fig. 1 is a schematic perspective view of a radiation detecting apparatus according to an embodiment.
圖2係一實施形態之放射線檢測器之陣列基板之電路圖。 Fig. 2 is a circuit diagram of an array substrate of a radiation detector of an embodiment.
圖3係一實施形態之放射線檢測裝置之方塊圖。 Fig. 3 is a block diagram showing a radiation detecting apparatus of an embodiment.
圖4係一實施形態之放射線檢測器之剖面之局部放大剖面圖。 Fig. 4 is a partially enlarged cross-sectional view showing a cross section of a radiation detector of an embodiment.
圖5係一實施形態之放射線檢測器之俯視圖。 Fig. 5 is a plan view showing a radiation detector of an embodiment.
圖6係一實施形態之放射線檢測器之側視圖。 Fig. 6 is a side view of a radiation detector of an embodiment.
圖7係一實施形態之放射線檢測器之外周部附近之放大剖面圖。 Fig. 7 is an enlarged cross-sectional view showing the vicinity of the outer peripheral portion of the radiation detector of the embodiment.
圖8係一實施形態之變化例之放射線檢測器之外周部附近的放大剖面圖。 Fig. 8 is an enlarged cross-sectional view showing the vicinity of the outer peripheral portion of the radiation detector according to a modification of the embodiment.
圖9係一實施形態之防濕體與陣列基板之接著時之模式性剖面圖。 Fig. 9 is a schematic cross-sectional view showing the moisture barrier of the embodiment and the array substrate.
圖10係表示於一實施形態中改變接著劑之塗佈量與加壓力之情形時之接著層向防濕體之凸緣部外側之溢出寬度之試製評價結果的曲線圖。 Fig. 10 is a graph showing the results of trial production evaluation of the overflow width of the adhesive layer to the outside of the flange portion of the moisture-proof body in the case where the coating amount and the pressing force of the adhesive are changed in one embodiment.
圖11係表示於一實施形態中改變接著劑之塗佈量與加壓力之情形時之接著劑向防濕體之凸緣部外側之溢出高度之試製評價結果的曲線圖。 Fig. 11 is a graph showing the results of trial production evaluation of the overflow height of the adhesive agent to the outside of the flange portion of the moisture-proof body in the case where the amount of the adhesive applied and the pressing force are changed in one embodiment.
圖12係比較例中之防濕體與陣列基板之接著時之模式性剖面圖。 Fig. 12 is a schematic cross-sectional view showing the adhesion of the moisture-proof body and the array substrate in the comparative example.
圖13係表示於一實施形態之比較例中改變接著劑之塗佈量與加壓力之情形時之接著層向防濕體之凸緣部外側之溢出寬度之試製評價結果的曲線圖。 Fig. 13 is a graph showing the results of trial production evaluation of the overflow width of the adhesive layer to the outside of the flange portion of the moisture-proof body when the application amount of the adhesive is applied and the pressure is applied in the comparative example of the embodiment.
圖14係表示於一實施形態之比較例中改變接著劑之塗佈量與加壓力之情形時之接著劑向防濕體之凸緣部外側之溢出高度之試製評價結果的曲線圖。 Fig. 14 is a graph showing the results of trial production evaluation of the overflow height of the adhesive agent to the outside of the flange portion of the moisture-proof body when the application amount of the adhesive is applied and the pressure is applied in the comparative example of the embodiment.
圖15係表示一實施形態及比較例中之高溫高濕試驗及冷熱循環試驗之評價試樣之概要的表。 Fig. 15 is a table showing an outline of evaluation samples of a high-temperature high-humidity test and a cold-heat cycle test in one embodiment and a comparative example.
圖16係一實施形態及比較例中之高溫高濕試驗結果之表。 Fig. 16 is a table showing the results of high temperature and high humidity tests in an embodiment and a comparative example.
圖17係表示一實施形態及比較例中之高溫高濕試驗中之解像度 特性之試驗結果的曲線圖。 Figure 17 is a view showing the resolution in the high temperature and high humidity test in an embodiment and a comparative example. A graph of the test results of the characteristics.
圖18係一實施形態及比較例中之冷熱可靠性試驗結果之表。 Fig. 18 is a table showing the results of the cold heat reliability test in the embodiment and the comparative example.
圖19係表示於一實施形態及比較例中之冷熱可靠性試驗中有無產生異常之曲線圖。 Fig. 19 is a graph showing the presence or absence of an abnormality in the thermal reliability test in the embodiment and the comparative example.
圖20係表示一實施形態及變化例之試樣之接著層製作條件的表。 Fig. 20 is a table showing conditions for producing an underlayer of a sample according to an embodiment and a modification.
圖21係表示一實施形態及變化例之試樣之高溫高濕試驗之結果的表。 Fig. 21 is a table showing the results of a high temperature and high humidity test of a sample according to an embodiment and a modification.
圖22係一實施形態及變化例之試樣之冷熱可靠性試驗結果之表。 Fig. 22 is a table showing the results of the cold heat reliability test of the samples of the embodiment and the modification.
圖23係表示一實施形態及變化例之試樣之高溫高濕試驗中之解像度特性之試驗結果的曲線圖。 Fig. 23 is a graph showing the test results of the resolution characteristics in the high-temperature and high-humidity test of the samples of the embodiment and the modification.
圖24係表示於一實施形態及變化例之試樣之冷熱可靠性試驗中有無產生異常之曲線圖。 Fig. 24 is a graph showing the presence or absence of an abnormality in the cold heat reliability test of the sample according to the embodiment and the modification.
圖1係一實施形態之放射線檢測裝置之模式性立體圖。圖2係本實施形態之放射線檢測器之陣列基板之電路圖。圖3係本實施形態之放射線檢測裝置之方塊圖。圖4係本實施形態之放射線檢測器之剖面的局部放大剖面圖。圖5係本實施形態之放射線檢測器之俯視圖。圖6係本實施形態之放射線檢測器之側視圖。 Fig. 1 is a schematic perspective view of a radiation detecting apparatus according to an embodiment. Fig. 2 is a circuit diagram of an array substrate of the radiation detector of the embodiment. Fig. 3 is a block diagram of the radiation detecting apparatus of the embodiment. Fig. 4 is a partially enlarged cross-sectional view showing a cross section of the radiation detector of the embodiment. Fig. 5 is a plan view showing a radiation detector of the embodiment. Fig. 6 is a side view of the radiation detector of the embodiment.
本實施形態之放射線檢測器11係對作為放射線圖像之X射線圖像進行檢測之X射線平面感測器,例如可用於普通醫療用途等。放射線檢測裝置10包括該放射線檢測器11、支持板31、電路基板30及可撓性基板32。放射線檢測器11包含陣列基板12及閃爍體層13。放射線檢測器11對入射之X射線進行檢測並將其轉換為螢光,且將該螢光轉換為電信號。放射線檢測裝置10驅動放射線檢測器11,且輸出自放射線檢 測器11輸出之電信號作為圖像資訊。放射線檢測裝置10所輸出之圖像資訊係顯示於外部之顯示器等。 The radiation detector 11 of the present embodiment is an X-ray plane sensor that detects an X-ray image as a radiographic image, and can be used, for example, in general medical applications. The radiation detecting device 10 includes the radiation detector 11, the support plate 31, the circuit substrate 30, and the flexible substrate 32. The radiation detector 11 includes an array substrate 12 and a scintillator layer 13. The radiation detector 11 detects the incident X-rays and converts them into fluorescent light, and converts the fluorescent light into an electrical signal. The radiation detecting device 10 drives the radiation detector 11 and outputs a self-radiation inspection The electrical signal output by the detector 11 is used as image information. The image information output from the radiation detecting device 10 is displayed on an external display or the like.
陣列基板12係將螢光轉換為電信號之光電轉換基板。陣列基板12包含玻璃基板16。於玻璃基板16之表面,呈正方格子狀排列有複數個微細之像素20。像素20係排列於例如對角線之長度為13英吋之長方形之像素區域(工作區域)內。各個像素20包含薄膜電晶體22與光電二極體21。又,於玻璃基板16之表面,控制線18沿著排列有像素20之正方格子之列,於各像素20之間延伸。進而,於玻璃基板16之表面,資料線19沿著排列有像素20之正方格子之行,於各像素20之間延伸。閃爍體層13係形成於陣列基板12之排列有像素20之區域之表面。 The array substrate 12 is a photoelectric conversion substrate that converts fluorescence into electrical signals. The array substrate 12 includes a glass substrate 16. On the surface of the glass substrate 16, a plurality of fine pixels 20 are arranged in a square lattice shape. The pixels 20 are arranged in, for example, a rectangular pixel area (working area) having a diagonal length of 13 inches. Each of the pixels 20 includes a thin film transistor 22 and a photodiode 21. Further, on the surface of the glass substrate 16, the control line 18 extends between the pixels 20 along the square lattice in which the pixels 20 are arranged. Further, on the surface of the glass substrate 16, the data lines 19 extend between the pixels 20 along the line of the square lattice in which the pixels 20 are arranged. The scintillator layer 13 is formed on the surface of the region of the array substrate 12 on which the pixels 20 are arranged.
閃爍體層13係設置於例如14×17英吋大小之陣列基板12之表面,當X射線入射時產生可見光區域之螢光。所產生之螢光到達至陣列基板12之表面。 The scintillator layer 13 is provided on the surface of the array substrate 12 of, for example, 14 × 17 inches, and generates fluorescence in the visible light region when X-rays are incident. The generated fluorescent light reaches the surface of the array substrate 12.
閃爍體層13係藉由真空蒸鍍法將例如碘化銫(CsI):鉈(Tl)、或碘化鈉(NaI):鉈(Tl)等形成為柱狀構造而成者。例如,於閃爍體層13使用CsI:Tl之蒸鍍膜,其膜厚約為600μm。CsI:Tl之柱狀構造結晶之柱(pillar)之粗細度於最表面例如為8~12μm左右。或者,亦可將氧硫化釓(Gd2O2S)螢光體粒子與黏合劑材料混合,塗佈於陣列基板12上並進行焙燒及硬化,且利用切塊機進行切割等,藉此形成溝槽部,而形成為四角柱狀,從而形成閃爍體層13。於該等柱間,可封入大氣或抗氧化用之氮氣(N2)等惰性氣體,或者亦可設為真空狀態。 The scintillator layer 13 is formed by forming a columnar structure such as cesium iodide (CsI): strontium (Tl) or sodium iodide (NaI): strontium (Tl) by a vacuum deposition method. For example, a vapor deposited film of CsI:Tl is used for the scintillator layer 13, and the film thickness thereof is about 600 μm. The thickness of the column of the columnar crystal of CsI: Tl is, for example, about 8 to 12 μm on the outermost surface. Alternatively, the yttrium oxysulfide (Gd 2 O 2 S) phosphor particles may be mixed with a binder material, applied to the array substrate 12, fired and hardened, and diced by a dicer, thereby forming The groove portion is formed in a quadrangular prism shape to form the scintillator layer 13. An inert gas such as nitrogen (N 2 ) for the atmosphere or anti-oxidation may be enclosed between the columns, or may be in a vacuum state.
陣列基板12接收於閃爍體層13產生之螢光,並產生電信號。其結果,藉由入射之X射線於閃爍體層13產生之可見光圖像被轉換為以電信號之形式表現之圖像資訊。 The array substrate 12 receives the fluorescent light generated by the scintillator layer 13 and generates an electrical signal. As a result, the visible light image generated by the incident X-rays on the scintillator layer 13 is converted into image information expressed in the form of an electrical signal.
放射線檢測器11係以形成有閃爍體層13之面之相反側之面與支持板31接觸之方式,支持於支持板31。電路基板30係配置於支持板31之 相對於放射線檢測器11之相反側。放射線檢測器11與電路基板30之間係藉由可撓性基板32而電性連接。 The radiation detector 11 is supported by the support plate 31 so that the surface on the opposite side to the surface on which the scintillator layer 13 is formed is in contact with the support plate 31. The circuit board 30 is disposed on the support board 31 Opposite to the opposite side of the radiation detector 11. The radiation detector 11 and the circuit board 30 are electrically connected by a flexible substrate 32.
各個光電二極體21係經由作為開關元件之薄膜電晶體22而連接於控制線18及資料線19。又,於各個光電二極體21,並聯地連接有儲存電容器27。儲存電容器27係形成為矩形平板狀,且與各光電二極體21之下部相對向地設置。再者,儲存電容器27並非必需,亦存在光電二極體21之電容兼作為儲存電容器27之情形。 Each of the photodiodes 21 is connected to the control line 18 and the data line 19 via a thin film transistor 22 as a switching element. Further, a storage capacitor 27 is connected in parallel to each of the photodiodes 21. The storage capacitor 27 is formed in a rectangular flat plate shape and disposed opposite to the lower portion of each of the photodiodes 21. Further, the storage capacitor 27 is not essential, and the capacitance of the photodiode 21 also serves as the storage capacitor 27.
光電二極體21及並聯地連接於其之儲存電容器27連接於薄膜電晶體22之汲極電極25。薄膜電晶體22之閘極電極23連接於控制線18。薄膜電晶體22之源極電極24連接於資料線19。 The photodiode 21 and the storage capacitor 27 connected thereto in parallel are connected to the drain electrode 25 of the thin film transistor 22. The gate electrode 23 of the thin film transistor 22 is connected to the control line 18. The source electrode 24 of the thin film transistor 22 is connected to the data line 19.
排列之位於相同列之像素20之薄膜電晶體22之閘極電極23係連接於同一控制線18。排列之位於相同行之像素20之薄膜電晶體22之源極電極24係連接於同一資料線19。 The gate electrodes 23 of the thin film transistors 22 arranged in the same column of pixels 20 are connected to the same control line 18. The source electrodes 24 of the thin film transistors 22 arranged in the same row of pixels 20 are connected to the same data line 19.
相同列之像素20中之薄膜電晶體22之閘極電極23連接於相同之控制線18。相同行之像素20中之薄膜電晶體22之源極電極24連接於相同之資料線19。 The gate electrodes 23 of the thin film transistors 22 in the pixels 20 of the same column are connected to the same control line 18. The source electrodes 24 of the thin film transistors 22 in the pixels 20 of the same row are connected to the same data line 19.
各薄膜電晶體22擔負將藉由螢光入射至光電二極體21而產生之電荷儲存及釋放之切換功能。薄膜電晶體22係藉由作為具有結晶性之半導體材料之作為非晶質半導體之非晶矽(a-Si)、或作為多晶半導體之多晶矽(P-Si)等半導體材料構成至少一部分。 Each of the thin film transistors 22 is responsible for switching the charge storage and release generated by the fluorescence incident on the photodiode 21. The thin film transistor 22 is at least partially formed of a semiconductor material such as an amorphous germanium (a-Si) which is an amorphous semiconductor or a polycrystalline semiconductor (P-Si) which is a semiconductor material having crystallinity.
再者,於圖1及圖2中,像素僅記載有5列5行或4列4行,但實際上有更多,根據解像度、拍攝面積形成有所需之像素。 Further, in FIGS. 1 and 2, only five columns of five rows or four columns of four rows are described, but actually there are more, and necessary pixels are formed in accordance with the resolution and the imaging area.
放射線檢測裝置10包括:放射線檢測器11、閘極驅動器39、列選擇電路35、積分放大器33、A/D(analog to digital,類比/數位)轉換器34、並聯/串聯轉換器38、及圖像合成電路36。閘極驅動器39連接於放射線檢測器11之各控制線18。閘極驅動器39控制各薄膜電晶體22之 動作狀態、即接通及斷開。積分放大器33連接於放射線檢測器11之各資料線19。 The radiation detecting apparatus 10 includes a radiation detector 11, a gate driver 39, a column selection circuit 35, an integrating amplifier 33, an A/D (analog to digital) converter 34, a parallel/serial converter 38, and a diagram. Like the synthesis circuit 36. The gate driver 39 is connected to each control line 18 of the radiation detector 11. The gate driver 39 controls each of the thin film transistors 22 The action state, that is, on and off. The integrating amplifier 33 is connected to each of the data lines 19 of the radiation detector 11.
列選擇電路35連接於閘極驅動器39。並聯/串聯轉換器38連接於積分放大器33。A/D轉換器34連接於並聯/串聯轉換器38。A/D轉換器34連接於圖像合成電路36。 The column selection circuit 35 is connected to the gate driver 39. The parallel/series converter 38 is connected to the integrating amplifier 33. The A/D converter 34 is connected to the parallel/series converter 38. The A/D converter 34 is connected to the image synthesizing circuit 36.
積分放大器33設置於例如連接放射線檢測器11與電路基板30之可撓性基板32上。其他元件設置於例如電路基板30上。 The integrating amplifier 33 is provided, for example, on the flexible substrate 32 that connects the radiation detector 11 and the circuit board 30. Other components are provided on, for example, the circuit substrate 30.
閘極驅動器39接收來自列選擇電路35之信號,而控制各薄膜電晶體22之動作狀態、即接通及斷開。亦即,依序變更控制線18之電壓。閘極驅動器39安裝於例如陣列基板12之表面之外周附近。列選擇電路35將用以選擇掃描X射線圖像之特定之列的信號發送至閘極驅動器39。積分放大器33將自放射線檢測面板通過資料線19而輸出之極其微小之電荷信號放大並輸出。 The gate driver 39 receives the signal from the column selection circuit 35, and controls the operation state of each of the thin film transistors 22, that is, on and off. That is, the voltage of the control line 18 is sequentially changed. The gate driver 39 is mounted near, for example, the periphery of the surface of the array substrate 12. The column selection circuit 35 transmits a signal for selecting a specific column of the scanned X-ray image to the gate driver 39. The integrating amplifier 33 amplifies and outputs an extremely small charge signal output from the radiation detecting panel through the data line 19.
於陣列基板12之表面形成有絕緣性之保護膜28,該絕緣性之保護膜28覆蓋光電二極體21及薄膜電晶體22等檢測元件、以及控制線18及資料線19等金屬配線。閃爍體層13係以覆蓋排列有像素20之區域之方式,形成於保護膜28之表面。 An insulating protective film 28 is formed on the surface of the array substrate 12, and the insulating protective film 28 covers the detecting elements such as the photodiode 21 and the thin film transistor 22, and the metal wiring such as the control line 18 and the data line 19. The scintillator layer 13 is formed on the surface of the protective film 28 so as to cover the region in which the pixels 20 are arranged.
多數情形時於閃爍體層13之表面設置有反射膜14。反射膜14使於閃爍體層13產生之螢光中之遠離陣列基板12者向陣列基板12側反射。藉此,增大到達至光電二極體21之螢光光量。 In many cases, the reflective film 14 is provided on the surface of the scintillator layer 13. The reflective film 14 reflects the phosphor generated by the scintillator layer 13 away from the array substrate 12 toward the array substrate 12 side. Thereby, the amount of fluorescent light reaching the photodiode 21 is increased.
反射膜14係藉由使銀合金或鋁等螢光反射率較高之金屬於閃爍體層上成膜之方法而形成。或者,亦可為使鋁等具有金屬表面之反射板密接於閃爍體層13而成者,亦可塗佈形成包含TiO2等光散射性物質與黏合劑樹脂之漫反射性之反射膜14。再者,反射膜14係取決於放射線檢測器11所要求之解像度、亮度等特性,並非必需。 The reflection film 14 is formed by a method of forming a film on a scintillator layer by a metal having a high fluorescence reflectance such as a silver alloy or aluminum. Alternatively, a reflector having a metal surface such as aluminum may be adhered to the scintillator layer 13, or a reflective film 14 containing a diffuse reflectance of a light-scattering substance such as TiO 2 and a binder resin may be applied. Further, the reflection film 14 is not necessarily required depending on characteristics such as resolution and brightness required by the radiation detector 11.
放射線檢測器11具備防濕構造。該防濕構造係將覆蓋閃爍體層13 及反射膜14之防濕體15接著密封於陣列基板12之表面而形成。 The radiation detector 11 is provided with a moisture proof structure. The moisture-proof structure will cover the scintillator layer 13 The moisture-proof body 15 of the reflective film 14 is then formed by sealing on the surface of the array substrate 12.
防濕體15係形成為中央部隆起之帽狀。防濕體15之周邊部分成為平坦之帶狀凸緣部50。凸緣部50係形成為包圍陣列基板12之表面之形成有閃爍體層13之區域之外側的帶狀。於凸緣部50之內側形成有頂板部51。頂板部51係較閃爍體層13略大之平板狀部分。於凸緣部50與頂板部51之間形成有斜面部52。 The moisture-proof body 15 is formed in a hat shape in which the central portion is raised. The peripheral portion of the moisture-proof body 15 is a flat band-shaped flange portion 50. The flange portion 50 is formed in a strip shape that surrounds the outer surface of the region of the array substrate 12 on which the scintillator layer 13 is formed. A top plate portion 51 is formed inside the flange portion 50. The top plate portion 51 is a flat portion slightly larger than the scintillator layer 13. A slope portion 52 is formed between the flange portion 50 and the top plate portion 51.
凸緣部50與陣列基板12相對向。凸緣部50與陣列基板12之間被接著。形成於陣列基板12上之閃爍體層13及反射膜14由防濕體15之頂板部51及斜面部52覆蓋。防濕體15保護閃爍體層13及反射膜14不受外部大氣或濕度影響。 The flange portion 50 faces the array substrate 12. The flange portion 50 and the array substrate 12 are followed. The scintillator layer 13 and the reflective film 14 formed on the array substrate 12 are covered by the top plate portion 51 and the slope portion 52 of the moistureproof body 15. The moistureproof body 15 protects the scintillator layer 13 and the reflective film 14 from the outside atmosphere or humidity.
防濕體15係由例如鋁或鋁合金之箔形成。作為本實施例,防濕體15係由0.1mm之AlN30-O材(純鋁系材料之退火材料)形成。凸緣部50之寬度例如為2.5mm。 The moistureproof body 15 is formed of a foil such as aluminum or aluminum alloy. As the present embodiment, the moisture-proof body 15 is formed of a 0.1 mm AlN30-O material (annealed material of a pure aluminum-based material). The width of the flange portion 50 is, for example, 2.5 mm.
於陣列基板12排列有控制線18及資料線19之各者之端部露出而成之焊墊29,從而形成端子群26。端子群26係沿著陣列基板12之邊排列。與控制線18相連之端子群26及與資料線19相連之端子群26係沿著不同之邊排列。該等端子群26經由可撓性基板32與電路基板30電性連接。 A terminal pad 26 is formed by arranging the pads 29 exposed at the ends of each of the control line 18 and the data line 19 on the array substrate 12. The terminal groups 26 are arranged along the sides of the array substrate 12. The terminal group 26 connected to the control line 18 and the terminal group 26 connected to the data line 19 are arranged along different sides. The terminal groups 26 are electrically connected to the circuit board 30 via the flexible substrate 32.
圖7係本實施形態之放射線檢測器之外周部附近之放大剖面圖。 Fig. 7 is an enlarged cross-sectional view showing the vicinity of the outer peripheral portion of the radiation detector of the embodiment.
自陣列基板12之中央部之取得X射線圖像之工作區域至排列於基板周邊部之焊墊29為止之各者延伸有引線62。於陣列基板12之最表層形成有0.2~0.3μm左右之無機膜與2μm左右之有機膜作為保護膜28。作為引線,有用以驅動TFT(Thin Film Transistor,薄膜電晶體)之控制線18、讀出與X射線圖像對應之電荷之資料線19、及用以施加用以使光電二極體21進行動作之偏壓電壓之偏壓線。 Lead wires 62 are extended from the working region in which the X-ray image is obtained from the central portion of the array substrate 12 to the pads 29 arranged in the peripheral portion of the substrate. An inorganic film of about 0.2 to 0.3 μm and an organic film of about 2 μm are formed as the protective film 28 on the outermost layer of the array substrate 12. As the lead wire, a control line 18 for driving a TFT (Thin Film Transistor), a data line 19 for reading an electric charge corresponding to an X-ray image, and a signal line 19 for applying the photodiode 21 are applied. The bias voltage of the bias voltage.
防濕體15與陣列基板12係藉由接著層90而接著。接著層90包含 對向接著部91與溢出部92。對向接著部91係形成於凸緣部50與陣列基板12之間。溢出部92係自凸緣部50之外緣向外側、即自凸緣部50之外緣向朝向陣列基板12之外緣之方向溢出之部分。接著層90之溢出部92自陣列基板12之表面突出。溢出部92之突出高度係於本例之情形時至少高於凸緣部50之與陣列基板12相對向之面。 The moisture-proof body 15 and the array substrate 12 are followed by the subsequent layer 90. Layer 90 then contains The opposite portion 91 and the overflow portion 92 are opposed. The opposing portion 91 is formed between the flange portion 50 and the array substrate 12. The overflow portion 92 is a portion that overflows outward from the outer edge of the flange portion 50, that is, from the outer edge of the flange portion 50 toward the outer edge of the array substrate 12. The overflow portion 92 of the layer 90 then protrudes from the surface of the array substrate 12. The protruding height of the overflow portion 92 is at least higher than the surface of the flange portion 50 opposite to the array substrate 12 in the case of this example.
圖8係本實施形態之變化例之放射線檢測器之外周部附近的放大剖面圖。 Fig. 8 is an enlarged cross-sectional view showing the vicinity of the outer peripheral portion of the radiation detector according to a modification of the embodiment.
於該變化例中,溢出部92迴繞至凸緣部50之與對向接著部91為相反側之面。亦即,凸緣部50之外緣附近由對向接著部91與迴繞部93夾持。 In this modification, the overflow portion 92 is wound around the surface of the flange portion 50 opposite to the opposite end portion 91. That is, the vicinity of the outer edge of the flange portion 50 is sandwiched by the opposing end portion 91 and the rewinding portion 93.
繼而,對該放射線檢測器之製造方法進行說明。 Next, a method of manufacturing the radiation detector will be described.
首先,於玻璃基板16上形成像素20、控制線18、及資料線19等而製造陣列基板12。其次,於陣列基板12之表面形成閃爍體層13。又,將鋁或鋁合金之箔加壓成型,而預先獲得防濕體15。繼而,將防濕體15接著於陣列基板12。 First, the array substrate 12 is manufactured by forming the pixel 20, the control line 18, the data line 19, and the like on the glass substrate 16. Next, a scintillator layer 13 is formed on the surface of the array substrate 12. Further, a foil of aluminum or aluminum alloy is press-formed, and the moisture-proof body 15 is obtained in advance. Then, the moistureproof body 15 is followed by the array substrate 12.
圖9係本實施形態之防濕體與陣列基板之接著時之模式性剖面圖。 Fig. 9 is a schematic cross-sectional view showing the state of the moisture barrier and the array substrate of the embodiment.
於防濕體15與陣列基板12之接著時,使用接著托盤(加壓治具)80。接著托盤80於周圍形成有供載置凸緣部50之邊框部81。於較邊框部81更靠內側形成有凹部82。防濕體15係以將凸緣部50載置於邊框部81上且將頂板部51及斜面部52配置於凹部82之狀態,被載置於接著托盤80。 When the moisture-proof body 15 and the array substrate 12 are next to each other, a tray (pressure fixture) 80 is used. Next, the tray 80 is formed with a frame portion 81 on which the flange portion 50 is placed. A concave portion 82 is formed on the inner side of the frame portion 81. The moisture-proof body 15 is placed on the next tray 80 in a state where the flange portion 50 is placed on the frame portion 81 and the top plate portion 51 and the inclined surface portion 52 are disposed in the concave portion 82.
邊框部81之寬度與凸緣部50之寬度大致相同。又,凹部82之大小與頂板部51及斜面部52之大小大致相同。因此,載置於接著托盤80之防濕體15之外周係以大致重疊於接著托盤80之外周之方式配置。凸緣部50及邊框部81之寬度例如均為2.5mm。考慮到防濕體15之尺寸之 誤差,亦可使邊框部之寬度較防濕體之凸緣之寬度略窄或略寬。 The width of the frame portion 81 is substantially the same as the width of the flange portion 50. Further, the size of the concave portion 82 is substantially the same as the size of the top plate portion 51 and the inclined surface portion 52. Therefore, the outer periphery of the moisture-proof body 15 placed on the tray 80 is disposed so as to substantially overlap the outer circumference of the tray 80. The width of the flange portion 50 and the frame portion 81 is, for example, 2.5 mm. Considering the size of the moistureproof body 15 The error may also make the width of the frame portion slightly narrower or slightly wider than the width of the flange of the moisture-proof body.
於載置於接著托盤80之防濕體15之凸緣部50之與陣列基板12相對向之面塗佈有接著劑94。接著劑94係藉由例如分注器而呈較凸緣部50之寬度細之帶狀遍及全周塗佈。接著劑94既可於將防濕體15載置於接著托盤80之狀態下塗佈,亦可將塗佈有接著劑94之防濕體15載置於接著托盤。 An adhesive 94 is applied to the surface of the flange portion 50 of the moisture-proof body 15 placed on the tray 80 facing the array substrate 12. The subsequent agent 94 is applied over the entire circumference in a strip shape having a narrower width than the flange portion 50 by, for example, a dispenser. The subsequent agent 94 may be applied while the moisture-proof body 15 is placed on the tray 80, or the moisture-proof body 15 coated with the adhesive 94 may be placed on the subsequent tray.
藉由在接著劑94被塗佈於凸緣部50之狀態下將接著托盤80向陣列基板12側壓抵,而將凸緣部50朝向陣列基板12加壓。接著劑94之塗佈量係設為於以特定之壓力將凸緣部50壓抵於陣列基板12時接著劑94自凸緣部50之外緣溢出之程度。於介隔接著劑94將凸緣部50安裝於陣列基板12之後,使接著劑94硬化。 By pressing the adhesive tray 80 toward the array substrate 12 while the adhesive 94 is applied to the flange portion 50, the flange portion 50 is pressed toward the array substrate 12. The coating amount of the adhesive 94 is such a degree that the adhesive 94 overflows from the outer edge of the flange portion 50 when the flange portion 50 is pressed against the array substrate 12 by a specific pressure. After the flange portion 50 is attached to the array substrate 12 via the adhesive 94, the adhesive 94 is cured.
於將防濕體15加壓於陣列基板12時,於較凸緣部50更靠外側之區域,至少除凸緣部50之附近以外,不存在邊框部81。亦即,於防濕體15之較凸緣部50之外緣靠外側,無抑制接著劑94之流動之構造。其結果,於將凸緣部50朝向陣列基板12加壓時自凸緣部50之外緣溢出之接著劑94沿接著托盤80之側面(緣面)擴展。因此,接著層90之溢出部向陣列基板12之表面方向外側之擴展被抑制得較小,但沿高度方向形成為凸形狀。尤其是於將防濕體15自鉛垂下方朝向鉛垂上方加壓於陣列基板12之情形時,即於溢出之接著劑94因重力而沿接著托盤80之側面下垂之情形時,接著劑94之溢出部分向表面方向外側之擴展進一步被抑制。 When the moisture-proof body 15 is pressed against the array substrate 12, the frame portion 81 is not present at least in the region outside the flange portion 50 except for the vicinity of the flange portion 50. That is, the moisture-proof body 15 is located outside the outer edge of the flange portion 50, and has no structure for suppressing the flow of the adhesive 94. As a result, the adhesive 94 that overflows from the outer edge of the flange portion 50 when the flange portion 50 is pressed toward the array substrate 12 spreads along the side surface (edge surface) of the tray 80. Therefore, the expansion of the overflow portion of the bonding layer 90 toward the outer side in the surface direction of the array substrate 12 is suppressed to be small, but is formed in a convex shape in the height direction. In particular, when the moisture-proof body 15 is pressed against the array substrate 12 from the vertically downward direction toward the vertical direction, that is, when the overflowing adhesive 94 hangs down along the side of the tray 80 by gravity, the adhesive 94 The expansion of the overflow portion to the outer side in the surface direction is further suppressed.
於以此方式形成防濕構造並完成放射線檢測器11後,經過如下步驟而完成放射線檢測裝置10,即,將信號處理電路之配線連接於資料線19之焊墊29,將控制電路之配線連接於控制線18之焊墊29,進行其他安裝步驟,且進行確認光電轉換元件或Pad有無連接異常之電氣試驗,組裝於殼體,進行X射線圖像試驗等。 After the moisture-proof structure is formed in this manner and the radiation detector 11 is completed, the radiation detecting apparatus 10 is completed by the following steps, that is, the wiring of the signal processing circuit is connected to the pad 29 of the data line 19, and the wiring of the control circuit is connected. In the bonding pad 29 of the control line 18, another mounting step is performed, and an electrical test for confirming whether or not the photoelectric conversion element or the Pad is abnormal is attached, and is assembled in the casing to perform an X-ray image test or the like.
繼而,對試製本實施形態之放射線檢測器11之例進行說明。 Next, an example of the radiation detector 11 of the present embodiment will be described.
於閃爍體層13使用CsI:Tl之蒸鍍膜,使用膜厚約為600μm且CsI:Tl之柱狀構造結晶之柱(pillar)之粗細度於最表面為8~12μm左右者。閃爍體層13係藉由真空蒸鍍法於相當於14×17英吋大小之基板上形成CsI:Tl膜(600μmt)而成者。反射膜14係將混合TiO2之次微米粉體、黏合劑樹脂及溶劑而成之塗液塗佈於閃爍體層13上並進行乾燥而形成。 A vapor deposition film of CsI:Tl is used for the scintillator layer 13, and a column having a thickness of about 600 μm and a columnar structure of CsI:Tl has a thickness of about 8 to 12 μm on the outermost surface. The scintillator layer 13 is formed by forming a CsI:Tl film (600 μm) on a substrate corresponding to a size of 14 × 17 inches by vacuum evaporation. The reflective film 14 is formed by applying a coating liquid containing a submicron powder of TiO 2 , a binder resin, and a solvent onto the scintillator layer 13 and drying it.
防濕體15係將厚度為0.1mm之AL箔加壓成形為於周邊部具有2.5mm寬度之帽檐部之構造而製成帽形狀。藉由分注器裝置於帽狀之防濕體15之凸緣部50塗佈接著劑94,並與形成有閃爍體膜13及反射膜14之基板貼合。接著劑94係利用環氧系材質之加熱硬化型、紫外線硬化型之兩者製作。接著劑94之比重約為1.4g/cc。接著劑94向帽狀防濕體15之凸緣部50之塗佈量係以0.4mg/mm、0.6mg/mm、0.8mg/mm、1.2mg/mm、1.6mg/mm之5個標準進行試製。 The moisture-proof body 15 is formed by press-forming an AL foil having a thickness of 0.1 mm into a structure having a hat portion having a width of 2.5 mm in the peripheral portion. The adhesive 94 is applied to the flange portion 50 of the cap-shaped moisture-proof body 15 by a dispenser device, and bonded to the substrate on which the scintillator film 13 and the reflective film 14 are formed. The subsequent agent 94 is produced by both a heat curing type and an ultraviolet curing type of an epoxy-based material. The subsequent agent 94 has a specific gravity of about 1.4 g/cc. The coating amount of the adhesive agent 94 to the flange portion 50 of the cap-shaped moisture-proof body 15 is 5 standards of 0.4 mg/mm, 0.6 mg/mm, 0.8 mg/mm, 1.2 mg/mm, and 1.6 mg/mm. Trial production.
於該試製中,於防濕體15之凸緣部50與陣列基板12之接著時使用第9圖所示之接著托盤80。該接著托盤80係以於貼合時被加壓之邊框部81之寬度與防濕體15之凸緣部50之寬度大致一致為2.5mm進行製作。考慮到貼合時之位置偏差,亦可使邊框之寬度具有稍許、例如0.1~0.5mm之裕度,而設為稍微寬幅之邊框,例如寬度為2.6~3.0mm。 In the trial production, the succeeding tray 80 shown in Fig. 9 is used next to the flange portion 50 of the moistureproof body 15 and the array substrate 12. The tray 80 is produced by making the width of the frame portion 81 which is pressed at the time of bonding and the width of the flange portion 50 of the moisture-proof body 15 substantially equal to 2.5 mm. In consideration of the positional deviation at the time of bonding, the width of the frame may be slightly, for example, 0.1 to 0.5 mm, and the frame may be slightly wider, for example, having a width of 2.6 to 3.0 mm.
接著時之加壓條件設為於防濕體15之凸緣部50之每單位面積為0.5kgf/cm2、1.0kgf/cm2、1.5kgf/cm2、2.0kgf/cm2、2.5kgf/cm2之5個標準。 Next to the pressing conditions of the flange portion of the moistureproof body 15 per unit area of 50 to 0.5kgf / cm 2, 1.0kgf / cm 2, 1.5kgf / cm 2, 2.0kgf / cm 2, 2.5kgf / 5 standards for cm 2 .
根據接著劑94之黏度及塗佈量、以及貼合時之加壓力而決定接著層之壓扁方式,從而決定接著層之厚度或溢出量。必須根據所需之接著層之厚度或可能之製造條件(塗佈量或加壓力)等選定適當黏度之 接著劑。於使用紫外線硬化型接著劑之情形時,雖然亦取決於其黏度,但亦可於塗佈接著劑後,於使其密接之前,預先照射少量紫外線,使接著劑之硬度提高一定量之後進行貼合。用於該試製之接著劑之黏度約為400Pa.sec,為相當高之黏度。 The thickness of the adhesive layer or the amount of overflow of the adhesive layer is determined by determining the thickness of the adhesive layer and the amount of application of the adhesive 94 and the pressing force at the time of bonding. The appropriate viscosity must be selected according to the thickness of the desired layer or the possible manufacturing conditions (coating amount or pressure). Follow-up agent. In the case of using an ultraviolet curable adhesive, although depending on the viscosity, after applying the adhesive, a small amount of ultraviolet rays may be irradiated before the adhesion, and the hardness of the adhesive may be increased by a certain amount. Hehe. The adhesive used for the trial production has a viscosity of about 400 Pa. Sec, for a fairly high viscosity.
圖10係表示於本實施形態中改變接著劑之塗佈量與加壓力之情形時之接著層向防濕體之凸緣部外側之溢出寬度之試製評價結果的曲線圖。圖11係表示於本實施形態中改變接著劑之塗佈量與加壓力之情形時之接著劑向防濕體之凸緣部外側之溢出高度之試製評價結果的曲線圖。溢出寬度及溢出高度之值係表示平均值。 Fig. 10 is a graph showing the results of trial production evaluation of the overflow width of the adhesive layer to the outside of the flange portion of the moisture-proof body when the application amount of the adhesive is applied and the pressure is applied in the embodiment. Fig. 11 is a graph showing the results of trial production evaluation of the overflow height of the adhesive agent to the outside of the flange portion of the moisture-proof body in the case where the amount of the adhesive applied and the pressing force are changed in the present embodiment. The values of the overflow width and the overflow height represent the average value.
於本實施形態中,由於在防濕體之凸緣部50之外側無抑制接著劑94之流動之構造,故而接著劑94硬化而形成之接著層90之溢出部92沿接著托盤80之側面(緣面)擴展。其結果,接著層90之溢出部92向平面方向外側之擴展被抑制得較小,但沿著高度方向形成為凸形狀。 In the present embodiment, since there is no structure for suppressing the flow of the adhesive 94 on the outer side of the flange portion 50 of the moisture-proof body, the overflow portion 92 of the adhesive layer 90 formed by curing the adhesive 94 is along the side of the tray 80 ( Extended). As a result, the expansion of the overflow portion 92 of the subsequent layer 90 to the outside in the planar direction is suppressed to be small, but is formed in a convex shape along the height direction.
接著層90之溢出部92之溢出寬度係隨著塗佈量及加壓力變大而變大。然而,若加壓力超過大約1.0kgf/cm2,則伴隨著加壓力之增加之溢出寬度之增加會飽和,變得大致固定。又,接著層90之溢出部92之溢出高度係隨著塗佈量及加壓力變大而變大。然而,若加壓力超過大約1.0kgf/cm2,則伴隨著加壓力之增加之溢出高度之增加會飽和,變得大致固定。 Then, the overflow width of the overflow portion 92 of the layer 90 becomes larger as the coating amount and the pressing force become larger. However, if the applied pressure exceeds about 1.0 kgf/cm 2 , the increase in the overflow width accompanying the increase in the pressing force is saturated and becomes substantially constant. Further, the overflow height of the overflow portion 92 of the subsequent layer 90 becomes larger as the coating amount and the pressing force become larger. However, if the applied pressure exceeds about 1.0 kgf/cm 2 , the increase in the overflow height accompanying the increase in the pressing force is saturated and becomes substantially constant.
為了進行比較,亦進行使用邊框部較寬之接著托盤之試製。 For comparison, a trial production using a tray with a wide frame portion was also carried out.
圖12係比較例中之防濕體與陣列基板之接著時之模式性剖面圖。 Fig. 12 is a schematic cross-sectional view showing the adhesion of the moisture-proof body and the array substrate in the comparative example.
於該比較例中,接著托盤84之邊框部85之寬度充分地寬於防濕體15之凸緣部50之寬度。於該比較例中,接著托盤84之邊框寬度為20mm。該接著托盤84之凹部86之大小係設為與實施形態之接著托盤80之凹部82之大小相同。 In this comparative example, the width of the frame portion 85 of the tray 84 is sufficiently wider than the width of the flange portion 50 of the moistureproof body 15. In this comparative example, the width of the frame of the tray 84 was 20 mm. The size of the recess 86 of the tray 84 is the same as the size of the recess 82 of the tray 80 of the embodiment.
圖13係表示於本實施形態之比較例中改變接著劑之塗佈量與加壓力之情形時之接著層向防濕體之凸緣部外側之溢出寬度之試製評價結果的曲線圖。圖14係表示於本實施形態之比較例中改變接著劑之塗佈量與加壓力之情形時之接著劑向防濕體之凸緣部外側之溢出高度之試製評價結果的曲線圖。 Fig. 13 is a graph showing the results of trial production evaluation of the overflow width of the adhesive layer to the outside of the flange portion of the moisture-proof body when the application amount of the adhesive is applied and the pressure is applied in the comparative example of the present embodiment. Fig. 14 is a graph showing the results of trial production evaluation of the overflow height of the adhesive agent to the outside of the flange portion of the moisture-proof body when the application amount of the adhesive is applied and the pressure is applied in the comparative example of the embodiment.
於該比較例中,於防濕體15之凸緣部50之外側存在抑制接著劑94向高度方向之流動之接著托盤84之邊框部85。因此,接著劑94之溢出部向基板之外側方向擴展。並且,陣列基板12與接著托盤84之邊框部85之間隙至多為防濕體15之凸緣部50之厚度之程度(於本比較例中為0.1mm),即便有少量之接著劑94溢出,向陣列基板12之外側之擴展亦會變大。 In the comparative example, the frame portion 85 of the tray 84 that suppresses the flow of the adhesive 94 in the height direction is present on the outer side of the flange portion 50 of the moistureproof body 15. Therefore, the overflow portion of the adhesive 94 spreads toward the outer side of the substrate. Further, the gap between the array substrate 12 and the frame portion 85 of the tray 84 is at most the thickness of the flange portion 50 of the moisture-proof body 15 (0.1 mm in this comparative example), and even if a small amount of the adhesive 94 overflows, The expansion to the outside of the array substrate 12 also becomes large.
如此,根據本實施形態,可知即便為相同之接著劑塗佈量與加壓條件,接著層90之溢出部92之寬度亦明顯變小。即便較大程度地改變接著劑94之塗佈量與加壓條件之範圍,接著層90之溢出部92之寬度即便變大亦至多收斂於1.5mm左右以內。根據該結果,根據本實施形態,若防濕體15距離接著層90之外周為2~3mm,則可實現於其外側配置焊墊29等之小型化設計。 As described above, according to the present embodiment, it is understood that the width of the overflow portion 92 of the subsequent layer 90 is remarkably small even with the same amount of the adhesive applied and the pressing condition. Even if the coating amount and the pressure condition range of the adhesive 94 are largely changed, the width of the overflow portion 92 of the layer 90 is converged to at most about 1.5 mm even if it becomes large. According to the present embodiment, according to the present embodiment, when the moisture-proof body 15 is 2 to 3 mm from the outer periphery of the adhesive layer 90, it is possible to realize a miniaturization design in which the bonding pads 29 and the like are disposed on the outer side.
另一方面,於擴大接著托盤84之邊框部85之比較例中,根據接著劑94之塗佈量與加壓之條件,於此次之研究範圍內亦產生超過10mm之接著劑之溢出。可知:於接著劑94之塗佈量增加、加壓力變大之趨勢下,接著層之溢出部之最大高度不會有大程度的改變,而接著層之溢出部之寬度會明顯變大。因此,為了適當地確保接著層之寬度,且抑制密封材料之溢出使其不到達至周圍之焊墊部等,條件之控制變得極其困難。若於前後左右以此方式於接著層之溢出部之寬度產生差異,則於有效像素區域之外側應確保之尺寸會產生多達10mm以上之差。亦即,如本實施形態般,於防濕體之凸緣部50之外側取消抑 制接著劑94之流動之構造對於放射線檢測器11之小型化設計明顯有優勢。 On the other hand, in the comparative example in which the frame portion 85 of the tray 84 was enlarged, depending on the amount of application of the adhesive 94 and the conditions of pressurization, an overflow of the adhesive of more than 10 mm occurred in the current research range. It can be seen that under the tendency that the coating amount of the adhesive 94 is increased and the pressing force is increased, the maximum height of the overflow portion of the subsequent layer is not largely changed, and the width of the overflow portion of the subsequent layer is remarkably large. Therefore, in order to appropriately ensure the width of the adhesive layer and suppress the overflow of the sealing material so as not to reach the surrounding pad portion or the like, the control of the conditions becomes extremely difficult. If a difference occurs in the width of the overflow portion of the adhesive layer in the front, back, left, and right directions, the size to be ensured on the outer side of the effective pixel region may be as large as 10 mm or more. That is, as in the present embodiment, the outer side of the flange portion 50 of the moistureproof body is removed. The configuration of the flow of the adhesive 94 is clearly advantageous for the miniaturization design of the radiation detector 11.
於本實施形態及比較例中,為了調查防濕構造之可靠性,而進行高溫高濕試驗及冷熱循環試驗。該等試驗係以形成至具有防濕構造之面板狀態進行。再者,高溫高濕試驗及冷熱循環試驗係以作為組入至殼體而成之製品之狀態最終進行確認,但與以形成至具有防濕構造之面板狀態進行試驗之結果基本相同。 In the present embodiment and the comparative example, in order to investigate the reliability of the moisture-proof structure, a high-temperature high-humidity test and a cold-heat cycle test were performed. These tests were carried out in the form of a panel formed to have a moisture-proof structure. In addition, the high-temperature and high-humidity test and the hot and cold cycle test were finally confirmed in the state of the product which was incorporated into the casing, but the results were basically the same as those in the state of being formed into the panel having the moisture-proof structure.
圖15係表示本實施形態及比較例中之高溫高濕試驗及冷熱循環試驗之評價試樣之概要的表。 Fig. 15 is a table showing an outline of evaluation samples of the high-temperature high-humidity test and the cold-heat cycle test in the present embodiment and the comparative example.
該等可靠性試驗用之評價試樣係使用包含光電轉換元件或TFT之未形成像素圖案之純虛設面板製作。玻璃基板與最上層之保護膜相當於實體基板,且無其他膜及圖案化。其原因在於,適合以形成至具有防濕構造之面板單獨測定亮度或解像度之特性。又,關於本實施形態之接著構造部之防濕可靠性或冷熱可靠性,認為利用虛設面板之試製評價可實現與實體基板同等之評價。 The evaluation samples for the reliability tests were produced using a pure dummy panel including a photoelectric conversion element or a TFT without forming a pixel pattern. The glass substrate and the uppermost protective film correspond to a solid substrate, and no other film or pattern is formed. The reason for this is that it is suitable to separately measure the brightness or the resolution of the panel formed to have a moisture-proof structure. Further, regarding the moisture-proof reliability or the cold-heat reliability of the subsequent structure portion of the present embodiment, it is considered that evaluation by the trial production evaluation of the dummy panel can be achieved in the same manner as the physical substrate.
圖16係本實施形態及比較例中之高溫高濕試驗結果之表。圖17係表示本實施形態及比較例中之高溫高濕試驗中之解像度特性之試驗結果的曲線圖。 Fig. 16 is a table showing the results of the high-temperature and high-humidity test in the present embodiment and the comparative examples. Fig. 17 is a graph showing the test results of the resolution characteristics in the high-temperature and high-humidity test in the present embodiment and the comparative example.
高溫高濕下之可靠性係藉由如下方式進行評價:追蹤藉由閃爍體層與反射膜而獲得之亮度與解像度特性根據60℃-90%RH環境下之保管時間如何劣化。圖16表示尤其對濕度更敏感之解像度特性之評價結果。解像度特性係藉由如下方法實施:將解像度圖配置於試樣之表面側,照射相當於RQA-5之X射線,並自背面側測定2Lp/mm之CTF(Contrast transfer function,對比轉移函數)。將初始狀態之CTF設為100%,表示相對於60℃-90%RH之保管時間之維持率(%)。 The reliability under high temperature and high humidity was evaluated by tracking how the luminance and resolution characteristics obtained by the scintillator layer and the reflective film deteriorated according to the storage time in the environment of 60 ° C - 90% RH. Fig. 16 shows the results of evaluation of the resolution characteristics which are particularly sensitive to humidity. The resolution characteristic was carried out by arranging the resolution map on the surface side of the sample, irradiating X-rays corresponding to RQA-5, and measuring a CTF (Contrast transfer function) of 2 Lp/mm from the back side. The CTF in the initial state was set to 100%, and the retention rate (%) with respect to the storage time of 60 ° C - 90% RH was shown.
藉由與圖15之表進行對比可知,有接著層之溢出之試樣與無溢 出之試樣相比,高溫高濕之解像度維持率良好。又,對於利用窄邊框之接著托盤製作而接著層外側之溢出寬度較小且溢出高度較大的試樣、與利用寬邊框之接著托盤製作而接著層外側之溢出寬度較大且溢出高度較小的試樣,未觀察到特別差異。認為出現該特徵之原因在於:接著層90向防濕體15之凸緣部50外溢出之部分不會特別地對防濕性能造成影響,而於形成於防濕體15之凸緣部50與陣列基板12之間之部分制約防濕性能。 By comparing with the table of Fig. 15, it can be seen that there is a sample with overflow of the subsequent layer and no overflow. Compared with the sample, the resolution retention rate of high temperature and high humidity is good. Further, in the case of the succeeding tray production using a narrow bezel, the sample having a small overflow width on the outer side of the layer and having a large overflow height is formed on the succeeding tray using the wide bezel, and the overflow width on the outer side of the subsequent layer is large and the overflow height is small. No significant differences were observed in the samples. The reason why this feature is considered to be that the portion of the adhesive layer 90 that overflows to the outside of the flange portion 50 of the moisture-proof body 15 does not particularly affect the moisture-proof performance, but is formed on the flange portion 50 of the moisture-proof body 15 and Part of the array substrate 12 restricts moisture resistance.
圖18係本實施形態及比較例中之冷熱可靠性試驗結果之表。圖19係表示於本實施形態及比較例中之冷熱可靠性試驗中有無產生異常的曲線圖。 Fig. 18 is a table showing the results of the cold heat reliability test in the present embodiment and the comparative example. Fig. 19 is a graph showing the presence or absence of an abnormality in the thermal reliability test in the present embodiment and the comparative example.
冷熱可靠性試驗係於(-20℃×1h)→(室溫×30分鐘)→(60℃×1h)→(室溫×30分鐘)之溫度條件下,循環數最大為100循環而實施。以中途之每10循環為一個往復,對各個試樣確認是否產生有接著層之部位之脫落或破裂等異常。於圖19中,縱軸係未產生該等異常之試樣即維持密封狀態之試樣之片數。 The thermal reliability test was carried out under the conditions of (-20 ° C × 1 h) → (room temperature × 30 minutes) → (60 ° C × 1 h) → (room temperature × 30 minutes), and the number of cycles was at most 100 cycles. Each of the 10 cycles in the middle was reciprocated, and it was confirmed for each sample whether or not an abnormality such as peeling or cracking of the portion having the subsequent layer occurred. In Fig. 19, the vertical axis indicates the number of samples in which the abnormality is not produced, i.e., the sample in which the sealing state is maintained.
藉由與圖15之表進行對比可知,有接著層90之溢出之試樣與無溢出之試樣相比,於冷熱試驗中難以產生接著層之脫落或破裂。又,對於利用窄邊框之接著托盤80製作而接著層外側之溢出寬度較小且溢出高度較大的試樣、與利用寬邊框之接著托盤84製作而接著層外側之溢出寬度較大且溢出高度較小之試樣,未觀察到特別差異。認為出現該特徵之原因在於:接著層90之向防濕體15之凸緣部50外溢出之部分不會特別地對接著層相對於冷熱溫度變化之密接度或強度造成影響,而於形成於防濕體15之凸緣部50與陣列基板12之間之部分制約密接度或相對於冷熱應力之強度。 As can be seen from the comparison with the table of Fig. 15, the sample having the overflow of the subsequent layer 90 is less likely to cause the peeling or cracking of the adhesive layer in the cold heat test as compared with the sample without overflow. Further, in the case of the succeeding tray 80 which is formed by the narrow frame, the sample having a small overflow width on the outer side of the layer and a large overflow height is formed on the succeeding tray 84 using the wide frame, and the overflow width on the outer side of the layer is large and the overflow height is large. For the smaller sample, no particular difference was observed. The reason why this feature is considered to be that the portion of the layer 90 that overflows to the outside of the flange portion 50 of the moisture-proof body 15 does not particularly affect the adhesion or strength of the adhesive layer with respect to the change of the hot and cold temperature, but is formed on The portion between the flange portion 50 of the moisture-proof body 15 and the array substrate 12 restricts the degree of adhesion or the strength with respect to the thermal stress.
於使對防濕體15之凸緣部50進行加壓之接著托盤之邊框部的側面位於較防濕體15之凸緣部外緣靠內側之情形時,接著層90之附近成 為如圖8所示之形狀。若為接著劑自防濕體15之凸緣部50充分地溢出至外側之條件,則接著層90迴繞至防濕體15之凸緣部50之與陣列基板12相對向之面之相反側之面。 When the flange portion 50 of the moisture-proof body 15 is pressed and the side surface of the frame portion of the tray is located inside the outer edge of the flange portion of the moisture-proof body 15, the vicinity of the layer 90 is formed. It is a shape as shown in FIG. When the adhesive agent is sufficiently overflowed from the flange portion 50 of the moisture-proof body 15 to the outside, the subsequent layer 90 is wound around the opposite side of the flange portion 50 of the moisture-proof body 15 opposite to the array substrate 12. surface.
對本實施形態之變化例之接著層迴繞至防濕體之凸緣部之與陣列基板相對向之面之相反側之面的試樣及其比較例進行可靠性試驗。 A reliability test was conducted on a sample in which the adhesive layer of the modification of the present embodiment was wound around the surface of the flange portion of the moisture-proof body opposite to the surface facing the array substrate and a comparative example thereof.
圖20係表示本實施形態及變化例之試樣之接著層製作條件的表。圖21係表示本實施形態及變化例之試樣之高溫高濕試驗之結果的表。圖22係本實施形態及變化例之試樣之冷熱可靠性試驗結果的表。圖23係表示本實施形態及變化例之試樣之高溫高濕試驗中之解像度特性之試驗結果的曲線圖。圖24係表示於本實施形態及變化例之試樣之冷熱可靠性試驗中有無產生異常的曲線圖。於圖24中,縱軸係未產生異常之試樣即維持密封狀態之試樣之片數。 Fig. 20 is a table showing the conditions for producing the underlayer of the sample of the embodiment and the modification. Fig. 21 is a table showing the results of the high-temperature and high-humidity test of the samples of the present embodiment and the modifications. Fig. 22 is a table showing the results of the cold heat reliability test of the samples of the present embodiment and the modifications. Fig. 23 is a graph showing the test results of the resolution characteristics in the high-temperature and high-humidity test of the samples of the present embodiment and the modifications. Fig. 24 is a graph showing the presence or absence of an abnormality in the cold heat reliability test of the sample of the present embodiment and the modification. In Fig. 24, the vertical axis indicates the number of samples in which the sample which is not abnormal, that is, the sample which is maintained in a sealed state.
可知於在凸緣部50之背面具有接著層90之迴繞之試樣中,與無迴繞之試樣相比,尤其於冷熱循環試驗中可確保更高之可靠性。認為其原因如下。即,因陣列基板12與防濕體15之熱膨脹差,而導致於防濕體15之凸緣部50與接著層90之間施加剝離方向之應力。然而,推斷亦自背面側藉由接著層90夾持防濕體15之凸緣部50之構造可能會帶來抵抗剝離應力之作用。 It can be seen that in the sample having the back layer 90 rewinded on the back surface of the flange portion 50, higher reliability can be ensured particularly in the cold and heat cycle test than in the case of the unwound sample. The reason is considered as follows. That is, the thermal expansion of the array substrate 12 and the moisture-proof body 15 is inferior, and the stress in the peeling direction is applied between the flange portion 50 of the moisture-proof body 15 and the adhesive layer 90. However, it is presumed that the configuration in which the flange portion 50 of the moisture-proof body 15 is sandwiched by the adhesive layer 15 from the back side may exert a resistance against peeling stress.
存在如下情形:於接著後溢出之接著劑94附著於接著托盤80之邊框部81及邊框部81之側壁(緣面)部分,而於自接著托盤80卸除防濕體15與陣列基板12時成為阻礙。因此,較佳為於有可能接著劑94會溢出之該等部位預先利用聚四氟乙烯(鐵氟龍(Teflon)(註冊商標))之膠帶等接著劑難以附著之材質進行被覆。或者較理想為預先塗覆(被覆)接著劑難以附著之材料。 There is a case where the adhesive 94 which is subsequently overflowed adheres to the frame portion 81 of the tray 80 and the side wall (edge surface) portion of the frame portion 81, and the moisture-proof body 15 and the array substrate 12 are removed from the subsequent tray 80. Become a hindrance. Therefore, it is preferable that the portions where the adhesive 94 is likely to overflow are coated with a material which is difficult to adhere to an adhesive such as a Teflon (registered trademark) tape. Or it is preferable to pre-coat (coat) a material which is difficult to adhere to the adhesive.
藉由實驗而明確如下情況:雖然因接著劑94之材質不同會稍微有差異,但若為聚四氟乙烯(鐵氟龍(註冊商標))、聚矽氧樹脂、聚丙 烯樹脂等室溫(20~25℃)下之表面能量大致為30mN/m以下(於進行接著密封之溫度狀態下)之材質,則防止接著劑94之溢出牢固地固著於接著托盤80,從而自接著托盤84卸除陣列基板12及防濕體15時不會產生特別之問題。又,除貼附膠帶之方法以外,將鐵氟龍(註冊商標)或聚矽氧樹脂預先塗覆於接著托盤84之該部位亦有效。又,亦可預先將低表面能量之油脂類等塗佈於接著托盤84之該部位,而抑制溢出之接著劑94附著於接著托盤80。 The following is clarified by experiment: although it is slightly different depending on the material of the adhesive 94, it is polytetrafluoroethylene (Teflon (registered trademark)), polyoxyl resin, polypropylene. When the surface energy at room temperature (20 to 25 ° C) at a room temperature (20 to 25 ° C) is approximately 30 mN/m or less (at a temperature state in which sealing is performed), the overflow of the adhesive 94 is prevented from being firmly fixed to the subsequent tray 80. Therefore, no particular problem arises when the array substrate 12 and the moisture-proof body 15 are removed from the subsequent tray 84. Further, in addition to the method of attaching the tape, it is also effective to apply Teflon (registered trademark) or polyoxymethylene resin to the portion of the tray 84 in advance. Further, it is also possible to apply a low surface energy fat or the like to the portion of the tray 84 in advance, and to prevent the overflowing adhesive 94 from adhering to the subsequent tray 80.
亦可於減壓氛圍下進行防濕體15與陣列基板12之貼合。於在減壓狀態下進行貼合之情形時,防濕體15密接於陣列基板12上之膜面,於本實施形態中密接於閃爍體層13上之反射膜14上。其結果,即便有振動或衝擊,防濕體15於膜面上亦不會移動,從而難以產生因顫噪效應引起之圖像晃動等異常。又,亦可藉由觀察防濕體15向膜面之密接狀態,而確認防濕體內部之減壓狀態,從而可判斷有無防濕體15之針孔或接著層90之缺陷等洩漏部。於萬一產生有洩漏之情形時,可避免向顧客流出。 The bonding of the moistureproof body 15 and the array substrate 12 can also be performed under a reduced pressure atmosphere. When the bonding is performed under reduced pressure, the moisture-proof body 15 is in close contact with the film surface on the array substrate 12, and is adhered to the reflective film 14 on the scintillator layer 13 in the present embodiment. As a result, even if there is vibration or impact, the moisture-proof body 15 does not move on the film surface, and it is difficult to cause an abnormality such as image shake due to the howling effect. Further, by observing the state in which the moisture-proof body 15 is in contact with the film surface, the pressure-reduced state inside the moisture-proof body can be confirmed, and the presence or absence of a leak such as a pinhole of the moisture-proof body 15 or a defect of the adhesive layer 90 can be determined. Avoid spilling out to customers in the event of a leak.
於在減壓氛圍下進行防濕體15與陣列基板12之貼合之情形時,於接著後使周邊恢復至大氣壓時,因接著層90之外側壓力(大氣壓)與內側壓力之差異,而導致接著層90受到被吸進防濕體15之內側之力。為了避免該現象所致之洩漏等不良情況,必須於恢復至大氣壓之前之減壓狀態下,確保如可承受外壓之接著層90之硬度、厚度、接著寬度、陣列基板12與防濕體15之密接力。 When the moisture-proof body 15 and the array substrate 12 are bonded together under a reduced pressure atmosphere, when the periphery is returned to the atmospheric pressure after that, the difference between the pressure (atmospheric pressure) and the inside pressure of the outer layer 90 is caused. The layer 90 is then subjected to a force that is sucked into the inside of the moisture-proof body 15. In order to avoid such a problem as leakage due to the phenomenon, it is necessary to ensure the hardness, thickness, and subsequent width of the adhesive layer 90 which can withstand external pressure, and the array substrate 12 and the moisture-proof body 15 under reduced pressure before returning to atmospheric pressure. Close contact.
於使用陽離子聚合紫外線硬化型接著劑之情形時,例如可如下般製作。將防濕體15之凸緣部50之寬度設為2.5mm,將接著劑94之塗佈量設為0.8mg/mm。於塗佈接著劑後,以80mJ/cm2照射365nm之紫外線。 When a cationically polymerized ultraviolet curable adhesive is used, it can be produced, for example, as follows. The width of the flange portion 50 of the moistureproof body 15 was set to 2.5 mm, and the coating amount of the adhesive 94 was set to 0.8 mg/mm. After the application of the adhesive, ultraviolet rays of 365 nm were irradiated at 80 mJ/cm 2 .
其後,將載置有防濕體15之接著托盤80與附有閃爍體膜13或反 射膜14之陣列基板12載置於真空腔室內,於使腔室內減壓至0.1氣壓之狀態下,使防濕體15與陣列基板12貼合。其後,使腔室內恢復至大氣壓,進而自陣列基板12之背面照射紫外線6J/cm2左右,而提高接著劑94之硬度。進而,藉由在60℃下進行3小時之加熱處理而完成接著層90之硬化。 Thereafter, the subsequent tray 80 on which the moisture-proof body 15 is placed and the array substrate 12 with the scintillator film 13 or the reflective film 14 are placed in a vacuum chamber, and the chamber is decompressed to a pressure of 0.1 atm. The moistureproof body 15 is bonded to the array substrate 12. Thereafter, the chamber is returned to atmospheric pressure, and ultraviolet rays are irradiated from the back surface of the array substrate 12 to about 6 J/cm 2 to increase the hardness of the adhesive 94. Further, the curing of the adhesive layer 90 was completed by heat treatment at 60 ° C for 3 hours.
連結像素區域與外部電路之焊墊29之引線62通過將防濕體15之凸緣部50貼合於陣列基板12之部位。因此,於自陣列基板12之背面照射紫外線之情形時,於該引線62之部分紫外線不會照射至接著劑。即,不會進行硬化。 The lead 62 connecting the pixel region and the pad 29 of the external circuit is bonded to the portion of the array substrate 12 by the flange portion 50 of the moisture-proof body 15. Therefore, when ultraviolet rays are irradiated from the back surface of the array substrate 12, part of the ultraviolet rays in the lead 62 are not irradiated to the adhesive. That is, it does not harden.
因此,使用陽離子聚合型紫外線硬化接著劑即可。陽離子聚合型紫外線接著劑具有如下特性:於紫外線照射部產生之硬化反應於紫外線照射後亦繼續進行,又,亦傳播至紫外線被照射部之周邊部。藉由該特徵,周邊之配線間之紫外線所照射之部位之硬化反應傳播,進而促進加熱硬化時之該硬化反應之傳播,從而成為例如50μm至100μm左右之引線62之影之部分之接著劑94亦可獲得一定之硬度。由於該效果,而發揮作為紫外線硬化型接著劑之特點之黏度之穩定性、長時間之適用期、操作之容易性等,且可藉由自陣列基板12之背面照射紫外線而於具有金屬配線62之區域形成接著層90。 Therefore, a cationic polymerization type ultraviolet curing adhesive can be used. The cationic polymerization type ultraviolet ray adhesive has a characteristic that the curing reaction generated in the ultraviolet ray irradiation portion is continued after the ultraviolet ray irradiation, and also propagates to the peripheral portion of the ultraviolet ray irradiation portion. According to this feature, the curing reaction of the portion irradiated by the ultraviolet rays between the peripheral wirings propagates, and the propagation of the curing reaction at the time of heat curing is promoted, thereby becoming an adhesive 94 of a portion of the lead 62 of, for example, about 50 μm to 100 μm. A certain hardness can also be obtained. Due to this effect, the viscosity of the ultraviolet curable adhesive is excellent, the long-term application period, the ease of handling, and the like, and the metal wiring 62 can be provided by irradiating ultraviolet rays from the back surface of the array substrate 12. The region forms an adhesive layer 90.
雖將防濕體15之材質設為0.1mmt之鋁箔,但材質並不限於鋁,亦可使用鋁合金、或利用樹脂與無機膜(Al等輕金屬或SiO2、SiON、Al2O3等陶瓷系材質)之積層構造之低透濕防濕材料等。又,關於厚度,並非如不必要地大程度地吸收X射線般之極端之厚度,又,只要不會因其剛性而導致與基板接著之後產生不良情況,則其範圍並無特別限定。 Although the material of the moistureproof body 15 to the aluminum foil of 0.1mmt, but the material is not limited to aluminum, aluminum alloy may also be used, with the resin or inorganic film (Al or light metal such as SiO 2, SiON, Al 2 O 3 ceramics such It is a low moisture permeability moistureproof material with a laminated structure. Further, the thickness is not excessively absorbed to the extreme extent of X-rays as much as necessary, and the range is not particularly limited as long as it does not cause a problem with the substrate due to its rigidity.
又,於圖9中,接著托盤80之邊框部81之側面(緣面)相對於加壓面垂直,但側面(緣面)亦可為曲面,或亦可進行倒角。接著層90之溢 出部92之豎立形狀會根據該等側面形狀而不同,但接著劑94均以自陣列基板12之表面向上方成為凸形狀之方式流動,從而向陣列基板12之外側之擴展得以抑制。 Further, in Fig. 9, the side surface (edge surface) of the frame portion 81 of the tray 80 is perpendicular to the pressing surface, but the side surface (edge surface) may be curved or may be chamfered. Then layer 90 overflows The vertical shape of the outlet portion 92 differs depending on the shape of the side surfaces. However, the adhesive 94 flows so as to become convex upward from the surface of the array substrate 12, and the expansion to the outside of the array substrate 12 is suppressed.
如此,根據本實施形態,將陣列基板12與防濕體15之凸緣部50接著之接著層90係除了防濕體15之凸緣部50與陣列基板12之表面之間之對向接著部91以外,亦溢出至較凸緣部50靠外側之陣列基板12表面上而形成。又,接著層90之溢出至較凸緣部50靠外側而形成之溢出部92係於上側為凸形狀,且其最大高度超過凸緣部50之上表面之高度。此種放射線檢測器11係於在包含閃爍體層13之防濕體15之凸緣部50與陣列基板12之間夾著接著劑94並進行加壓而形成接著層90時,於防濕體15之凸緣部50之與陣列基板12相對向之面之背面側配置具有邊框狀之加壓面之接著托盤80,且接著托盤80之加壓面之外側側面(緣面)位於防濕體15之凸緣部50之外緣之延長線上或靠近凸緣部50之外緣之位置。 As described above, according to the present embodiment, the array substrate 12 and the flange portion 50 of the moisture-proof body 15 are followed by the adhesion layer 90 except for the opposite portion between the flange portion 50 of the moisture-proof body 15 and the surface of the array substrate 12. In addition to 91, it is also formed by overflowing onto the surface of the array substrate 12 outside the flange portion 50. Further, the overflow portion 92 formed by the overflow of the layer 90 to the outside of the flange portion 50 is convex on the upper side, and the maximum height thereof exceeds the height of the upper surface of the flange portion 50. The radiation detector 11 is formed on the moisture-proof body 15 when the adhesive layer 94 is interposed between the flange portion 50 of the moisture-proof body 15 including the scintillator layer 13 and the array substrate 12 to form the adhesive layer 90. The backing tray 80 having a frame-shaped pressing surface is disposed on the back side of the flange portion 50 facing the array substrate 12, and then the outer side surface (edge surface) of the pressing surface of the tray 80 is located on the moistureproof body 15 The outer edge of the flange portion 50 is on the extension line or near the outer edge of the flange portion 50.
根據此種放射線檢測器之製造方法及放射線檢測器,可調整接著劑94之量或貼合時之加壓力等,而至帽狀防濕體之外側部分為止確實地形成足夠之密封材料之溢出,並且藉由將於接著時對防濕體15之凸緣部50進行加壓之接著托盤80設為特定之形狀,而將接著層90向外側方向之擴展抑制為最小限度。其結果,防濕體15之凸緣部50與陣列基板12以最大面積密接,從而可確實地具有較高之防濕性能、及冷熱環境變化或高溫高濕環境下之較高之可靠性。又,同時可減少因接著劑向配置於防濕體15之周邊之焊墊29等擴展而導致產生不良情況之可能性。亦即,可提供一種具有較高可靠性之防濕構造、且亦兼具小型化設計之放射線檢測器。 According to the method for producing a radiation detector and the radiation detector, the amount of the adhesive 94 or the pressing force at the time of bonding can be adjusted, and a sufficient sealing material can be surely formed to the outer portion of the cap-shaped moisture-proof body. Further, by the subsequent pressing of the flange portion 50 of the moisture-proof body 15 to a predetermined shape, the expansion of the adhesive layer 90 in the outer direction is minimized. As a result, the flange portion 50 of the moisture-proof body 15 and the array substrate 12 are in close contact with each other with the largest area, so that it is possible to reliably have high moisture-proof performance, high thermal environment change, or high reliability in a high-temperature and high-humidity environment. Further, at the same time, it is possible to reduce the possibility of occurrence of defects due to the expansion of the adhesive agent to the pads 29 disposed around the moisture-proof body 15. That is, it is possible to provide a radiation detector having a highly reliable moisture-proof structure and also having a compact design.
以上,對本發明之若干個實施形態進行了例示,但該等實施形態係作為例子而提出者,並非意欲限定發明之範圍。該等新穎之實施 形態能以其他各種形態實施,且可於不脫離發明之主旨之範圍內,進行各種省略、置換、變更。該等實施形態及其變化例包含於發明之範圍或主旨中,並且包含於申請專利範圍所記載之發明及其均等之範圍內。又,上述各實施形態可相互組合而實施。 The embodiments of the present invention have been exemplified above, but the embodiments are presented as examples and are not intended to limit the scope of the invention. These novel implementations The form can be implemented in various other forms, and various omissions, substitutions, and changes can be made without departing from the spirit of the invention. The embodiments and variations thereof are included in the scope of the invention and the scope of the invention as set forth in the appended claims. Further, each of the above embodiments can be implemented in combination with each other.
11‧‧‧放射線檢測器 11‧‧‧radiation detector
12‧‧‧陣列基板 12‧‧‧Array substrate
13‧‧‧閃爍體層 13‧‧‧ scintillation layer
14‧‧‧反射膜 14‧‧‧Reflective film
15‧‧‧防濕體 15‧‧‧Damps
16‧‧‧玻璃基板 16‧‧‧ glass substrate
28‧‧‧保護膜 28‧‧‧Protective film
29‧‧‧焊墊 29‧‧‧ solder pads
50‧‧‧凸緣部 50‧‧‧Flange
51‧‧‧頂板部 51‧‧‧ top board
52‧‧‧斜面部 52‧‧‧Bevel
62‧‧‧引線 62‧‧‧ lead
90‧‧‧接著層 90‧‧‧Next layer
91‧‧‧對向接著部 91‧‧‧ opposite head
92‧‧‧溢出部 92‧‧‧Overflow
Claims (8)
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JP2013119455A JP6114635B2 (en) | 2013-06-06 | 2013-06-06 | Radiation detector and manufacturing method thereof |
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TWI591368B true TWI591368B (en) | 2017-07-11 |
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CN (1) | CN104241199B (en) |
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JP2016128779A (en) * | 2015-01-09 | 2016-07-14 | 株式会社東芝 | Radiation detector and manufacturing method therefor |
JP6749038B2 (en) * | 2016-04-07 | 2020-09-02 | キヤノン電子管デバイス株式会社 | Radiation detector and manufacturing method thereof |
JP2017192090A (en) * | 2016-04-15 | 2017-10-19 | 東芝電子管デバイス株式会社 | Radiation detector |
JP2017203672A (en) * | 2016-05-11 | 2017-11-16 | 東芝電子管デバイス株式会社 | Radiation detector |
JP6818617B2 (en) * | 2017-04-03 | 2021-01-20 | キヤノン電子管デバイス株式会社 | Radiation detectors, radiation detector manufacturing equipment, and radiation detector manufacturing methods |
JP7032513B2 (en) * | 2018-02-28 | 2022-03-08 | 富士フイルム株式会社 | Manufacturing method of radiation detector, radiation imaging device and radiation detector |
WO2019244610A1 (en) * | 2018-06-22 | 2019-12-26 | 富士フイルム株式会社 | Radiation detector and radiographic imaging device |
CN110849918B (en) * | 2019-10-31 | 2021-11-09 | 北京时代民芯科技有限公司 | Nondestructive detection method and system for welding spot defects of flip chip bonding device |
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JP3405706B2 (en) * | 1997-02-14 | 2003-05-12 | 浜松ホトニクス株式会社 | Radiation detection element |
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JP2002181949A (en) * | 2000-12-08 | 2002-06-26 | Canon Inc | Radiation detecting device and radiation image pickup system using the same |
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JP4764407B2 (en) * | 2007-11-20 | 2011-09-07 | 東芝電子管デバイス株式会社 | Radiation detector and manufacturing method thereof |
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JP2012052965A (en) * | 2010-09-02 | 2012-03-15 | Toshiba Corp | Radiation detector and method for producing the same |
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JP2014238271A (en) | 2014-12-18 |
TW201506434A (en) | 2015-02-16 |
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