TWI469405B - Method for manufacturing thermosetting led leadframe - Google Patents
Method for manufacturing thermosetting led leadframe Download PDFInfo
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- TWI469405B TWI469405B TW101129824A TW101129824A TWI469405B TW I469405 B TWI469405 B TW I469405B TW 101129824 A TW101129824 A TW 101129824A TW 101129824 A TW101129824 A TW 101129824A TW I469405 B TWI469405 B TW I469405B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Led Devices (AREA)
Description
本發明係有關一種發光二極體，尤指一種利用雙料帶製作發光二極體的支架結構的製作方法。The invention relates to a light-emitting diode, in particular to a manufacturing method of a bracket structure for manufacturing a light-emitting diode by using a double tape.
發光二極體已廣泛被運用在各種的電子裝置、電器產品或燈具等產品上，而且發光二極體在製作上都是朝著高亮度、多色光及散熱效果佳的技術來研發及改進，因而使得發光二極體製作的成本提高。除了前述的因素會使得發光二極體製作成本提高外，還有發光二極體的製作良率也會直接反應到製作成本上。Light-emitting diodes have been widely used in various electronic devices, electrical products or lamps, and the LEDs are developed and improved in the way of high-brightness, multi-color light and heat dissipation. Therefore, the cost of manufacturing the light-emitting diode is increased. In addition to the aforementioned factors, the manufacturing cost of the light-emitting diode is increased, and the production yield of the light-emitting diode is directly reflected in the production cost.
傳統的發光二極體在製作時，先備有一金屬板材，將金屬板材沖壓或蝕刻製程支架結構後，在該支架結構上具有一金屬邊框，該金屬邊框上透過連接部連接有複數個金屬支架，該金屬支架包含有一正極電片及負極電片，再利用熱固性塑膠於複數個該金屬支架上成型有膠座，在該膠座製作完成後，於該膠座的中空功能區中外露的正、負極電片上進行發光晶片的固晶及金線的打線製程，在固晶及打線製程後，將混有螢光粉的矽膠點入於該中空功能區中，在點膠製程後，再將金屬支架進行裁切及檢測。In the production of the conventional light-emitting diode, a metal plate is prepared, and after the metal plate is stamped or etched into the process support structure, a metal frame is arranged on the support structure, and the metal frame is connected with a plurality of metal supports through the connecting portion. The metal bracket comprises a positive electrode piece and a negative electrode piece, and then a thermostatic plastic is used to form a rubber seat on the plurality of metal brackets. After the rubber seat is finished, the exposed functional area of the rubber seat is exposed. On the negative electrode wafer, the solid crystal of the light-emitting chip and the gold wire bonding process are performed. After the solid crystal and the wire bonding process, the silicone powder mixed with the fluorescent powder is inserted into the hollow functional area, and after the dispensing process, Metal brackets are cut and tested.
由於傳統的發光二極體在製作完成後才進行亮度及色度配比的檢測，因此發二極體的亮度及色度配比不符合要求，使發光二極體製作的良率僅在50%左右。其主要的原因是在於該金屬支架上成型有膠座後，並未有對金屬 支架的正極電片及負極電片的連接部進行裁切，因此該金屬支架的正極電片及負極電片都是連結在一起，使膠座的中空功能區在點膠後無法馬上測試發光二極體的亮度及色度的配比是否正確，須待全製程完成才能確認品質，故造成不良率的發光二極體無法被即使檢測出來。Since the conventional light-emitting diodes are tested for brightness and chromaticity ratio after the fabrication is completed, the brightness and chromaticity ratio of the hair-emitting diodes do not meet the requirements, so that the yield of the light-emitting diodes is only 50. %about. The main reason is that there is no metal after the plastic bracket is formed on the metal bracket. The connecting portion of the positive electrode tab and the negative electrode tab of the bracket is cut, so that the positive electrode tab and the negative electrode tab of the metal bracket are connected together, so that the hollow functional area of the rubber seat cannot be tested immediately after dispensing. Whether the ratio of the brightness and the chromaticity of the polar body is correct, the quality must be confirmed after the completion of the whole process, so that the light-emitting diode which causes the defective rate cannot be detected even.
因此，本發明之主要目的，在於解決傳統缺失，本發明利用雙料帶的方式來製作發光二極體的支架結構，在發光二極體的點膠製作過程後即可立即進行前測作業，以檢測發光二極體的亮度及色度的配比是否正確，藉以提升發光二極體製作後的良率可在90%以上，進而可大幅降低製作成本。Therefore, the main object of the present invention is to solve the conventional defect. The present invention utilizes the method of double tape to fabricate the support structure of the light-emitting diode, and the pre-test operation can be performed immediately after the dispensing process of the light-emitting diode. It is detected whether the ratio of the brightness and the chromaticity of the light-emitting diode is correct, so that the yield after the production of the light-emitting diode can be increased by 90% or more, thereby greatly reducing the manufacturing cost.
為達上述之目的，本發明提供一種熱固型發光二極體的支架結構製作方法，包括：先備有一第一金屬板材及一第二金屬板；係將第一金屬板材上成型有複數貫穿孔及複數個位於該貫穿孔一側的第一電極片，該第二金屬板材成型具有複數個第二電極片，該複數個第二電極片由該連接部連成條狀；將第二金屬板材的第二電極片疊至於該第一金屬板材的貫穿孔上並對應該第一電極片，以形成支架結構；利用熱固技術於該支架結構上成型有一膠座；在熱固後，將第一金屬板材剝離，使該第一電極片埋設於該膠座中； 在該第一金屬板材剝離後，於該膠座的中空功能區上外露的第二電極片上固接有一發光晶片；於該發光晶片電性連結一金屬線至該中空功能區上外露的第一電極片上；在打線製作完成後，將膠體點入於該中空功能區中；在點膠完成後，施加電壓至該第一電極片及該第二電極片上，以點亮該發光晶片所產生的光與該膠體混色後，所形成的色度及亮度是否達到預設的色度及亮度的配比的要求。In order to achieve the above object, the present invention provides a method for fabricating a support structure for a thermosetting light-emitting diode, comprising: first having a first metal plate and a second metal plate; And a plurality of first electrode sheets on one side of the through hole, the second metal sheet is formed with a plurality of second electrode sheets, and the plurality of second electrode sheets are connected in a strip shape by the connecting portion; a second electrode sheet of the sheet material is stacked on the through hole of the first metal sheet and is corresponding to the first electrode sheet to form a bracket structure; a rubber seat is formed on the bracket structure by thermosetting technology; after heat setting, The first metal sheet is peeled off, so that the first electrode sheet is buried in the rubber seat; After the first metal plate is peeled off, a light-emitting chip is fixed on the exposed second electrode sheet on the hollow functional area of the rubber seat; and the light-emitting chip is electrically connected to the metal wire to the first exposed surface of the hollow functional area. On the electrode sheet; after the threading is completed, the colloid is clicked into the hollow functional area; after the dispensing is completed, a voltage is applied to the first electrode sheet and the second electrode sheet to illuminate the light-emitting wafer After the light is mixed with the colloid, whether the formed chromaticity and brightness meet the preset chromaticity and brightness ratio requirements.
其中，該第二金屬板材以沖壓或蝕刻製作該第二電極片，該第二電極片上具有一底座，該底座上具有一平台，該平台的二側邊上具有二相對應的二凹槽，另一側邊具有一凹口。Wherein, the second metal plate is stamped or etched to form the second electrode sheet, the second electrode sheet has a base thereon, the base has a platform, and the two sides of the platform have two corresponding two grooves. The other side has a notch.
其中，該第二電極片側邊的二凹槽及該凹口，使該平台呈一件衣服的形狀。Wherein, the two grooves on the side of the second electrode sheet and the recess make the platform have the shape of a piece of clothing.
其中，該第一電極片擠壓成型後，於該第一電極片的一側具有一凹陷部及一凸出部。The first electrode sheet has a depressed portion and a protruding portion on one side of the first electrode sheet after being extruded.
其中，該膠座成型後包覆於該第一電極片、第二電極片及該連接部上，同時該第一電極片的凹陷部及凸出部使該膠座與該第一電極片結合或嵌合。The rubber seat is formed on the first electrode sheet, the second electrode sheet and the connecting portion, and the recessed portion and the protruding portion of the first electrode sheet combine the rubber seat and the first electrode sheet. Or chimeric.
其中，在熱固後的該膠座的正面具有一中空功能區，該中空功能區使該第一電極片及該第二電極片外露。Wherein, the front surface of the rubber seat after thermosetting has a hollow functional area, and the hollow functional area exposes the first electrode sheet and the second electrode sheet.
其中，該膠座成型後，於該第一電極片與該第二電極片 之間形成有一呈T字形的膠座，該T字形的膠座凸出於第一電極片與該第二電極片的平面高度。Wherein, after the rubber seat is formed, the first electrode piece and the second electrode piece are formed A T-shaped rubber seat is formed therebetween, and the T-shaped rubber seat protrudes from the plane height of the first electrode sheet and the second electrode sheet.
其中，該發光晶片為單色或多色的晶片。Wherein, the illuminating wafer is a monochromatic or multi-colored wafer.
其中，該金屬線為金線。Wherein, the metal wire is a gold wire.
其中，該膠體為矽膠。Wherein, the colloid is tannin.
其中，該膠體添加有螢光粉。Among them, the colloid is added with a phosphor powder.
【實施方式】[Embodiment]
茲有關本發明之技術內容及詳細說明，現配合圖式說明如下：請參閱第一至七圖，係本發明之製作流程及各製作過程示意圖；同時請一併參閱第八及九圖。如圖所示：本發明之熱固型發光二極體的支架結構製作方法，首先，步驟100先備有一第一金屬板材10及一第二金屬板材20。The technical content and detailed description of the present invention are described below with reference to the following drawings: Please refer to the first to seventh figures, which are schematic diagrams of the manufacturing process and various manufacturing processes of the present invention; and please refer to the eighth and ninth drawings together. As shown in the figure, in the method for fabricating the support structure of the thermosetting light-emitting diode of the present invention, first, in step 100, a first metal plate 10 and a second metal plate 20 are prepared.
步驟102，係將第一金屬板材10上成型有複數貫穿孔101，利用加工工具30由該第一金屬板材10的貫穿孔101背面一側進行擠壓，在擠壓後凸出於該第一金屬板材10的表面形成第一電極片1，該第一電極片1位於該貫穿孔101一側。在該第一電極片1擠壓成型後，於該第一電極片1的一側具有一凹陷部11及一凸出部12(如第二a圖、第二b圖及第三圖)。In step 102, the first metal plate 10 is formed with a plurality of through holes 101, and is pressed by the processing tool 30 from the back side of the through hole 101 of the first metal plate 10, and protrudes from the first after extrusion. The surface of the metal plate 10 forms a first electrode sheet 1, and the first electrode sheet 1 is located on the side of the through hole 101. After the first electrode sheet 1 is extruded, a recess 11 and a protrusion 12 are formed on one side of the first electrode sheet 1 (such as the second a diagram, the second b diagram, and the third diagram).
步驟104，將該第二金屬板材20沖壓或蝕刻製成一具有複數個第二電極片2，該複數個第二電極片2由該連接部201連成條狀；該沖壓或蝕刻後的第二電極2上具有一底座21 ，該底座21上具有一平台22，該平台22的二側邊上具有二相對應的二凹槽221，另一側邊具有一凹口222，藉由該側邊的二凹槽221及該凹口222使該平台22呈一件衣服的形狀(如第二a圖)。Step 104, stamping or etching the second metal plate 20 to form a plurality of second electrode sheets 2, the plurality of second electrode sheets 2 being connected into strips by the connecting portion 201; the stamped or etched portion The second electrode 2 has a base 21 The base 21 has a platform 22 having two corresponding two recesses 221 on two sides thereof and a recess 222 on the other side, by the two recesses 221 of the side and the The recess 222 causes the platform 22 to assume the shape of a piece of clothing (e.g., Figure 2a).
步驟106，將沖壓或蝕刻成形的第二金屬板材20的第二電極片2的底座21疊至於該第一金屬板材10的貫穿孔101上，並對應該第一電極片1(如第四a圖、第四b圖)。Step 106, stacking the base 21 of the second electrode sheet 2 of the stamped or etched second metal sheet 20 onto the through hole 101 of the first metal sheet 10, and corresponding to the first electrode sheet 1 (such as the fourth a Figure, figure b)).
步驟108，在該第一金屬板材10擠壓後，利用熱固性塑膠經過熱固成型技術，於該金屬支架結構上成型有一膠座3，該膠座3成型後包覆於該第一電極片1、第二電極片2及該連接部201上，同時該第一電極片1的凹陷部11及凸出部12可使膠座3與該第一電極片1更穩固結合或嵌合。且熱固後的該膠座3的正面具有一中空功能區31，該中空功能區31使該第一電極片1及該第二電極片2外露(如第五、六圖)。另，在膠座3成型後，於該第一電極片1與該第二電極片2之間形成有一呈T字形的膠座3’(如第五圖所示)，該T字形的膠座3’凸出於第一電極片2與該第二電極片2的平面高度，因此具有防止水氣滲入及點入的膠體(圖中未示)滲出。Step 108, after the first metal plate 10 is extruded, a thermostatic molding technology is used to form a rubber seat 3 on the metal support structure by using a thermosetting plastic. The plastic seat 3 is molded and coated on the first electrode sheet 1 On the second electrode sheet 2 and the connecting portion 201, the recessed portion 11 and the protruding portion 12 of the first electrode sheet 1 can make the rubber seat 3 and the first electrode sheet 1 more firmly bond or fit. The front surface of the plastic holder 3 has a hollow functional area 31. The hollow functional area 31 exposes the first electrode sheet 1 and the second electrode sheet 2 (as shown in FIGS. 5 and 6). In addition, after the plastic seat 3 is formed, a T-shaped rubber seat 3 ′ (shown in FIG. 5 ) is formed between the first electrode sheet 1 and the second electrode sheet 2 , and the T-shaped rubber seat is formed. 3' protrudes from the plane height of the first electrode sheet 2 and the second electrode sheet 2, and thus has a colloid (not shown) which prevents moisture from penetrating and being infiltrated.
步驟110，在熱固後，再利用加工工具將第一金屬板材10未擠壓成型的材料剝離，僅剩該第一電極片1埋設於該膠座3中(如第七圖)。In step 110, after the thermosetting, the unextruded material of the first metal plate 10 is peeled off by using a processing tool, and only the first electrode sheet 1 is buried in the rubber seat 3 (as shown in FIG. 7).
步驟112，在該第一金屬板材10的廢料剝離後，於該膠座3的中空功能區31上外露的第二電極片2上固接有一發光 晶片4(如第八圖)。在本圖式中，該發光晶片4為單色或多色的晶片。Step 112, after the scrap of the first metal plate 10 is peeled off, a light is fixed on the exposed second electrode sheet 2 on the hollow functional area 31 of the rubber seat 3. Wafer 4 (as in Figure 8). In the present drawing, the light-emitting wafer 4 is a single-color or multi-color wafer.
步驟114，於該發光晶片4電性連結一金屬線5至該中空功能區31上外露的第一電極片1上(如第八圖)。在本圖式中，該金屬線5為金線。In step 114, the illuminating wafer 4 is electrically connected to a metal wire 5 to the exposed first electrode sheet 1 on the hollow functional region 31 (as shown in FIG. 8). In the figure, the metal wire 5 is a gold wire.
步驟116，在打線製作完成後，於該膠座3的中空功能區31內進行點膠製作，在膠體6點入於該中空功能區31內。在本圖式中，該膠體6為矽膠(如第九圖)。In step 116, after the wire is completed, the glue is made in the hollow functional zone 31 of the rubber seat 3, and the glue 6 is inserted into the hollow functional zone 31. In the present figure, the colloid 6 is a silicone (as in the ninth diagram).
步驟118，在點膠完成後，可以對發光二極體進行前測作業，所謂的前測作業就是在點膠完成後，該膠體6尚未乾涸前，檢測者可以施加電壓至該第一電極片1及該第二電極片2上，以點亮該發光晶片4所產生的光與該膠體6所混入的螢光粉混色後，所形成的色度及亮度是否達到與先前設計的色度及亮度配比的要求(如第九圖)。Step 118, after the dispensing is completed, the pre-measurement operation can be performed on the light-emitting diode. The so-called pre-test operation is that after the dispensing is completed, the tester can apply a voltage to the first electrode piece before the colloid 6 has not dried up. 1 and the second electrode sheet 2, after the light generated by the light-emitting chip 4 is mixed with the phosphor powder mixed in the colloid 6, whether the formed chromaticity and brightness reach the color of the previously designed color and The requirement of brightness ratio (such as the figure IX).
例如，要製作一個白光的發光二極體時，該發光晶片為藍光，再中空功能區31所點入的膠體6就混合有黃色的螢光粉，再膠體6點入後未乾涸時，檢測者可以對該第一電極片1及該第二電極片2加電源，以進行發光晶片4與混有黃色的螢光粉的膠體6的亮度及色度配比是否正確。For example, when a white light emitting diode is to be fabricated, the light emitting chip is blue light, and the colloid 6 which is inserted into the hollow functional area 31 is mixed with yellow fluorescent powder, and when the colloid 6 is not dried after being inserted, the detection is performed. A power source may be applied to the first electrode sheet 1 and the second electrode sheet 2 to determine whether the luminance and chromaticity ratio of the light-emitting wafer 4 and the colloid 6 mixed with the yellow phosphor powder are correct.
藉由上述的金屬支架結構利用雙料帶完成，在膠座3製作完成後該第一電極片1與該第二電極片2的電性呈分離，因此發光二極體在點膠後可以對第一電極片1及第二電極片2施加電壓進行前測作業，以檢測亮度及色度配比是否正確，使發光二極體的製作良率可以提升至90%以上， 以降低不良率的產生。The above-mentioned metal stent structure is completed by using a double strip, and the electrical properties of the first electrode sheet 1 and the second electrode sheet 2 are separated after the rubber seat 3 is completed, so that the light emitting diode can be aligned after the dispensing A voltage measurement is performed by applying a voltage to the electrode sheet 1 and the second electrode sheet 2 to detect whether the brightness and the chromaticity ratio are correct, so that the production yield of the light-emitting diode can be increased to 90% or more. To reduce the incidence of bad rates.
上述僅為本發明之較佳實施例而已，並非用來限定本發明實施之範圍。即凡依本發明申請專利範圍所做的均等變化與修飾，皆為本發明專利範圍所涵蓋。The above are only the preferred embodiments of the present invention and are not intended to limit the scope of the present invention. That is, the equivalent changes and modifications made by the scope of the patent application of the present invention are covered by the scope of the invention.
100~118‧‧‧步驟100~118‧‧‧Steps
10‧‧‧第一金屬板材10‧‧‧First metal sheet
101‧‧‧貫穿孔101‧‧‧through holes
1‧‧‧第一電極片1‧‧‧First electrode sheet
11‧‧‧凹陷部11‧‧‧Depression
12‧‧‧凸出部12‧‧‧ protruding parts
20‧‧‧第二金屬板材20‧‧‧Second sheet metal
201‧‧‧連接部201‧‧‧Connecting Department
2‧‧‧第二電極片2‧‧‧Second electrode
21‧‧‧底座21‧‧‧Base
22‧‧‧平台22‧‧‧ platform
221‧‧‧凹槽221‧‧‧ Groove
222‧‧‧凹口222‧‧‧ notch
30‧‧‧加工工具30‧‧‧Processing tools
3、3’‧‧‧膠座3, 3'‧‧‧Glass
31‧‧‧中空功能區31‧‧‧Hollow functional area
4‧‧‧發光晶片4‧‧‧Lighting chip
5‧‧‧金屬線5‧‧‧Metal wire
6‧‧‧膠體6‧‧‧colloid
第一圖，係本發明之製作流程示意圖。The first figure is a schematic diagram of the production process of the present invention.
第二a圖，係本發明之第一金屬板材及第二金屬板材分解示意圖。Figure 2 is a schematic exploded view of the first metal sheet and the second metal sheet of the present invention.
第二b圖，為第二a圖的局部放大示意圖。The second b diagram is a partially enlarged schematic view of the second a diagram.
第三圖，係本發明之利用加工工具擠壓第一金屬板材形成第一電極片示意圖。The third figure is a schematic view of the first electrode sheet formed by extruding the first metal plate by the processing tool of the present invention.
第四a圖，係本發明之第一金屬板材與第二金屬板材疊放後的立體示意圖Figure 4a is a perspective view of the first metal plate and the second metal plate of the present invention after being stacked
第四b圖，為第四a圖的疊放後的視剖視示意圖Figure 4b is a schematic cross-sectional view of the fourth a figure after stacking
第五圖，係本發明之第一金屬板材、第二金屬板材上熱固膠座示意圖。The fifth figure is a schematic view of the thermosetting plastic seat on the first metal plate and the second metal plate of the present invention.
第六圖，係第五圖的視示意圖。The sixth figure is a schematic view of the fifth figure.
第七圖，係第七圖剝璃第一金屬板材側視示意圖。The seventh figure is a side view of the first metal sheet of the seventh metal strip.
第八圖，係本發明之發光二極體的膠座上視示意圖。The eighth figure is a schematic top view of a rubber seat of the light-emitting diode of the present invention.
第九圖，係第八圖的側視示意圖。The ninth figure is a side view of the eighth figure.
100~118‧‧‧步驟100~118‧‧‧Steps
Claims (11)
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| TW101129824A TWI469405B (en) | 2012-08-17 | 2012-08-17 | Method for manufacturing thermosetting led leadframe |
| JP2012210125A JP5660506B2 (en) | 2012-08-17 | 2012-09-24 | Method for manufacturing frame structure of light-emitting diode having thermosetting property |
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|---|---|---|---|
| TW101129824A TWI469405B (en) | 2012-08-17 | 2012-08-17 | Method for manufacturing thermosetting led leadframe |
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| TW201409776A TW201409776A (en) | 2014-03-01 |
| TWI469405B true TWI469405B (en) | 2015-01-11 |
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| TW (1) | TWI469405B (en) |
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| JP6728998B2 (en) * | 2015-06-09 | 2020-07-22 | 日亜化学工業株式会社 | Light emitting device manufacturing method and light emitting device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWM279026U (en) * | 2005-07-01 | 2005-10-21 | Wan-Shuen Jou | Base for surface-mount-type LED |
| WO2011122190A1 (en) * | 2010-03-31 | 2011-10-06 | 株式会社 東芝 | Light emitting element module substrate, light emitting element module, and illuminating device |
| JP2011222868A (en) * | 2010-04-13 | 2011-11-04 | Alpha- Design Kk | Led element inspection and taping apparatus |
| TWM426882U (en) * | 2011-11-25 | 2012-04-11 | Xial Technology Co Ltd | Detachable LED modular structure with high thermal conductivity and optical performance |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3472450B2 (en) * | 1997-09-04 | 2003-12-02 | シャープ株式会社 | Light emitting device |
| JP3853279B2 (en) * | 2002-02-01 | 2006-12-06 | シャープ株式会社 | Semiconductor laser device, manufacturing method thereof, and optical pickup using the same |
| JP5743184B2 (en) * | 2011-01-12 | 2015-07-01 | 大日本印刷株式会社 | Semiconductor device, method for manufacturing the same, and lighting device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWM279026U (en) * | 2005-07-01 | 2005-10-21 | Wan-Shuen Jou | Base for surface-mount-type LED |
| WO2011122190A1 (en) * | 2010-03-31 | 2011-10-06 | 株式会社 東芝 | Light emitting element module substrate, light emitting element module, and illuminating device |
| JP2011222868A (en) * | 2010-04-13 | 2011-11-04 | Alpha- Design Kk | Led element inspection and taping apparatus |
| TWM426882U (en) * | 2011-11-25 | 2012-04-11 | Xial Technology Co Ltd | Detachable LED modular structure with high thermal conductivity and optical performance |
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| JP2014038994A (en) | 2014-02-27 |
| JP5660506B2 (en) | 2015-01-28 |
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