TWI469310B - 覆晶堆疊封裝結構及其封裝方法 - Google Patents

覆晶堆疊封裝結構及其封裝方法 Download PDF

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TWI469310B
TWI469310B TW98108666A TW98108666A TWI469310B TW I469310 B TWI469310 B TW I469310B TW 98108666 A TW98108666 A TW 98108666A TW 98108666 A TW98108666 A TW 98108666A TW I469310 B TWI469310 B TW I469310B
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wafer
substrate
recess
disposed
flip chip
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TW201036138A (en
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Hung Hsin Hsu
Chih Wei Wu
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Powertech Technology Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/921—Connecting a surface with connectors of different types
    • H01L2224/9212—Sequential connecting processes
    • H01L2224/92122—Sequential connecting processes the first connecting process involving a bump connector
    • H01L2224/92125—Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H01L2924/15155—Shape the die mounting substrate comprising a recess for hosting the device the shape of the recess being other than a cuboid
    • H01L2924/15156—Side view
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15313—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a land array, e.g. LGA

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Description

覆晶堆疊封裝結構及其封裝方法
本發明係有關一種晶片封裝技術，特別是關於一種覆晶堆疊封裝結構及其封裝方法。
覆晶封裝是採用導電凸塊作為晶片與基板連接的封裝技術。其係利用將晶片主動面朝下藉由凸塊與基板接合，來達到封裝的方式。除了可大幅度提高晶片PIN腳的密度之外，更可以降低雜訊的干擾、強化電性的效能、提高散熱能力、及縮減封裝體積等。然而，如何增加覆晶封裝之封裝體積集度亦為一重要課題。
為了解決上述問題，本發明目的之一係提供一種覆晶堆疊封裝結構及其封裝方法，藉由使用具有凹穴之基板將晶片以覆晶方式設置於內並可覆晶堆疊另一晶片於其上，基板另一側亦可將晶片覆晶封裝於其上，可有效增加覆晶封裝之積集度。
為了達到上述目的，本發明一實施例之一種覆晶堆疊封裝結構，係包括：一基板，係具有一上表面與一下表面，其中至少一凹穴設置於基板之上表面；一第一晶片，係設置於基板之凹穴底部，其中第一晶片之主動面係朝向凹穴底部並與基板電性連接第一晶片係完全埋設於凹穴 內；一第二晶片，係設置於基板之上表面，其中第二晶片係覆蓋並跨越凹穴與第一晶片且第二晶片之主動面係朝向基板之上表面並與基板電性連接；一第三晶片，係設置於基板之下表面，其中第三晶片之主動面係朝向基板之下表面並與基板電性連接；以及複數個焊球，係設置於基板之下表面。
本發明另一實施例之一種覆晶堆疊封裝方法，係包括下列步驟：提供一基板，係具有一上表面與一下表面且至少一凹穴設置於基板之上表面，其中複數個焊墊設置於基板之上表面、下表面與凹穴底部上，且設置於凹穴底部之焊墊係環繞凹穴底部之中心一黏著區域設置；用噴霧方式提供一助焊材料於焊墊上；設置一第一晶片於凹穴底部，其中第一晶片之主動面係朝向凹穴底部並與焊墊電性連接且第一晶片係完全埋設於凹穴內；設置一第二晶片於基板之上表面，其中第二晶片係覆蓋並跨越凹穴與第一晶片且第二晶片之主動面係朝向基板之上表面並與焊墊電性連接；設置一第三晶片，於基板之下表面，其中第三晶片之主動面係朝向基板之下表面並與焊墊電性連接；進行一覆晶底部填膠程序；以及設置複數個焊球於基板之下表面的焊墊上。
以下藉由具體實施例配合所附的圖式詳加說明，當更容易瞭解本發明之目的、技術內容、特點及其所達成之功效。
圖1A與圖1B所示為根據本發明一實施例之覆晶堆疊封裝結構的剖面示意圖與正面透視圖。於本實施例中，此覆晶堆疊封裝結構係包括：一基板10：一第一晶片20；一第二晶片30；一第三晶片40；以及複數個焊球70。其中，基板10具有一上表面16與一下表面18。第一晶片20與第二晶片30係以覆晶方式堆疊於基板10一側，而第三晶片40則以覆晶方式設置於基板10之另側。
接續上述說明，至少一凹穴14設置於基板10之上表面16。基板10之上表面16、下表面18以及凹穴14底部均設置有焊墊12。第一晶片20係設置於基板10之凹穴14底部，其中第一晶片20之主動面係朝向凹穴14底部並與基板10利用其上焊墊12電性連接且第一晶片20係完全埋設於凹穴14內。第二晶片30係設置於基板10之上表面16，其中第二晶片30係覆蓋並跨越凹穴14與第一晶片20且第二晶片30之主動面係朝向基板10之上表面16並與基板10利用其上焊墊12電性連接。另外，第三晶片40係設置於基板10之下表面18，其中第三晶片40之主動面係朝向基板10之下表面18並與基板10利用其上焊墊12電性連接；以及複數個焊球70，係設置於基板10之下表面18的焊墊12上。
請參照上述說明，請參照圖2A與圖2F，於另一實施例中，基板10上表面16設置的凹穴14可為一階梯狀凹穴。其中，於階梯狀凹穴14之底層與階梯狀凹穴14之第二層的基板10表面上均設置有複數個焊墊12於其上。一第四晶片50設置於階梯狀凹穴14之第二層上。其中，第一晶片20係設置於階梯狀凹穴14之底層；而第四晶片50係覆蓋第一晶片20；以及第四晶片50之主動面 係朝向階梯狀凹穴14之第二層之基板10並與利用其上焊墊12與基板10電性連接。
請參照圖2A、圖2B、圖2C、圖2D、圖2E與圖2F，本發明一實施例覆晶堆疊封裝方法係包括下列步驟。首先，如圖2A所示，提供一基板10。此基板10具有一上表面16與一下表面18且至少一凹穴14設置於基板10之上表面16。其中，複數個焊墊12設置於基板10之上表面16、下表面18與凹穴14底部上。其中，設置於凹穴14底部之焊墊12係環繞凹穴14底部之中心一黏著區域設置，如圖1B所示。於本實施例中，凹穴14為一階梯狀凹穴，除了底層設置焊墊12外，因此於階梯狀凹穴14之第二層或其他層亦設置焊墊12於其上。
接著，如圖2B所示，利用噴霧方式提供一助焊材料於焊墊12上。之後，提供一黏著材料60’於黏著區域用以黏著設置第一晶片20於凹穴14底部，如圖2C與圖2D所示。其中，第一晶片20之主動面係朝向凹穴14底部並與焊墊12電性連接。
於本實施例中，凹穴14為階梯狀，因此可疊置複數個晶片於凹穴14內。繼續，請參照圖2E，設置一第四晶片50於階梯狀凹穴14之第二層上。其中，第一晶片20係設置於階梯狀凹穴14之底層，而第四晶片50係覆蓋第一晶片20。第四晶片50之主動面係朝向階梯狀凹穴14之第二層之基板10並與其上焊墊12電性連接。於設置第四晶片50前更包含一步驟，係提供一黏著材料60’於第一晶片20之背面用以黏著第四晶片50。之後，設置一第二晶片30於基板10之上表面16並覆蓋凹穴14。同樣的，於設置第二晶片30前更包含一步驟，係提供一黏著材料 60’於第四晶片50背面用以黏著第二晶片30。其中，第二晶片30係覆蓋凹穴14且第二晶片30之主動面係朝向基板10之上表面16並與其上焊墊12電性連接。設置一第三晶片40於基板10之下表面18。於設置第三晶片40前更包含一步驟，係提供一黏著材料60’於基板10之下表面18用以黏著第三晶片40。其中，第三晶片40之主動面係朝向基板10之下表面18並與其上焊墊12電性連接。於不同實施例中，如圖1A，第二晶片30係利用黏著材料黏著固定於第一晶片20上。。
繼續上述說明，請參照圖2F，進行一覆晶底部填膠程序填入底部填膠60；以及設置複數個焊球70於基板10下表面18的焊墊12上。其中，於進行覆晶底部填膠程序前更包含一回焊(reflow)程序。
於上述實施例中，複數個導電凸塊(圖上未標)設置於第一晶片20、第二晶片30、第三晶片40與第四晶片50之主動面用以與設置在基板10上焊墊12電性連接。
本發明藉由使用具有凹穴之基板將晶片以覆晶方式設置於內並可覆晶堆疊另一晶片於其上，基板另一側亦可將晶片覆晶封裝於其上，可有效增加覆晶封裝之積集度，且本發明可依照需求將凹穴設計成階梯狀用以堆疊複數個晶片。
以上所述之實施例僅係為說明本發明之技術思想及特點，其目的在使熟習此項技藝之人士能夠瞭解本發明之內容並據以實施，當不能以之限定本發明之專利範圍，即大凡依本發明所揭示之精神所作之均等變化或修飾，仍應涵蓋在本發明之專利範圍內。
10．．．基板
12．．．焊墊
14．．．凹穴
16．．．上表面
18．．．下表面
20．．．第一晶片
30．．．第二晶片
40．．．第三晶片
50．．．第四晶片
60．．．底部填膠
60’．．．黏著材料
70．．．焊球
圖1A與圖1B所示為根據本發明一實施例之示意圖。
圖2A、圖2B、圖2C、圖2D、圖2E與圖2F所示為根據本發明一實施例之示意圖。
10．．．基板
12．．．焊墊
14．．．凹穴
16．．．上表面
18．．．下表面
20．．．第一晶片
30．．．第二晶片
40．．．第三晶片
60．．．底部填膠
70．．．焊球

Claims (12)

  1. 一種覆晶堆疊封裝結構，係包含：一基板，係具有一上表面與一下表面，其中至少一凹穴設置於該基板之該上表面；一第一晶片，係設置於該基板之該凹穴底部，其中該第一晶片之主動面係朝向該凹穴底部並與該基板電性連接且該第一晶片係完全埋設於該凹穴內；一第二晶片，係設置於該基板之該上表面，其中該第二晶片係覆蓋並跨越該凹穴與該第一晶片且該第二晶片之主動面係朝向該基板之該上表面並與該基板電性連接；一第三晶片，係設置於該基板之該下表面，其中該第三晶片之主動面係朝向該基板之該下表面並與該基板電性連接；以及複數個焊球，係設置於該基板之該下表面。
  2. 如請求項1所述之覆晶堆疊封裝結構，其中該凹穴係為一階梯狀凹穴。
  3. 如請求項2所述之覆晶堆疊封裝結構，更包含一第四晶片設置於該階梯狀凹穴之第二層上，其中該第一晶片係設置於該階梯狀凹穴之底層；而該第四晶片係覆蓋該第一晶片；以及該第四晶片之主動面係朝向該階梯狀凹穴之第二層之該基板與該基板電性連接。
  4. 如請求項3所述之覆晶堆疊封裝結構，其中更包含複數個導電凸塊設置於該第一晶片、該第二晶片、該第三晶片與該第四晶片之主動面用以與設置在該基板上之複數個焊墊電性連接。
  5. 一種覆晶堆疊封裝方法，係包含下列步驟： 提供一基板，係具有一上表面與一下表面且至少一凹穴設置於該基板之該上表面，其中複數個焊墊設置於該基板之該上表面、該下表面與該凹穴底部上，且設置於該凹穴底部之該些焊墊係環繞該凹穴底部之中心一黏著區域設置；利用噴霧方式提供一助焊材料於該些焊墊上；設置一第一晶片於該凹穴底部，其中第一晶片之主動面係朝向該凹穴底部並與該些焊墊電性連接且該第一晶片係完全埋設於該凹穴內；設置一第二晶片於該基板之該上表面，其中該第二晶片係覆蓋並跨越該凹穴與該第一晶片且該第二晶片之主動面係朝向該基板之該上表面並與該些焊墊電性連接；設置一第三晶片，於該基板之該下表面，其中該第三晶片之主動面係朝向該基板之該下表面並與該些焊墊電性連接；進行一覆晶底部填膠程序；以及設置複數個焊球於該基板之該下表面的該些焊墊上。
  6. 如請求項5所述之覆晶堆疊封裝方法，其中該凹穴係為一階梯狀凹穴。
  7. 如請求項5所述之覆晶堆疊封裝方法，於設置該第二晶片前更包含設置一第四晶片於該階梯狀凹穴之第二層上，其中該第一晶片係設置於該階梯狀凹穴之底層；而該第四晶片係覆蓋該第一晶片；以及該第四晶片之主動面係朝向該階梯狀凹穴之第二層之該基板與該些焊墊電性連接。
  8. 如請求項7所述之覆晶堆疊封裝方法，於設置該第四晶片前更包含一步驟，係提供一黏著材料於該第一晶片之背面用以黏著該第四晶片。
  9. 如請求項5所述之覆晶堆疊封裝方法，於設置該第一晶片前更包含一步驟，係提供一黏著材料於該黏著區域用以黏著該第一晶片於該凹穴底部。
  10. 如請求項5所述之覆晶堆疊封裝方法，於設置該第二晶片前更包含一步驟，係提供一黏著材料於該第一晶片背面用以黏著該第二晶片。
  11. 如請求項5所述之覆晶堆疊封裝方法，於設置該第三晶片前更包含一步驟，係提供一黏著材料於該基板之該下表面用以黏著該第三晶片。
  12. 如請求項5所述之覆晶堆疊封裝方法，於進行該覆晶底部填膠程序前更包含一回焊(reflow)程序。
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