TWI469215B - Plasma processing method - Google Patents
Plasma processing method Download PDFInfo
- Publication number
- TWI469215B TWI469215B TW100125308A TW100125308A TWI469215B TW I469215 B TWI469215 B TW I469215B TW 100125308 A TW100125308 A TW 100125308A TW 100125308 A TW100125308 A TW 100125308A TW I469215 B TWI469215 B TW I469215B
- Authority
- TW
- Taiwan
- Prior art keywords
- period
- plasma
- gas
- processing chamber
- etching
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
Landscapes
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011145164A JP5802454B2 (ja) | 2011-06-30 | 2011-06-30 | プラズマ処理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201301381A TW201301381A (zh) | 2013-01-01 |
| TWI469215B true TWI469215B (zh) | 2015-01-11 |
Family
ID=47389521
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100125308A TWI469215B (zh) | 2011-06-30 | 2011-07-18 | Plasma processing method |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8801951B2 (https=) |
| JP (1) | JP5802454B2 (https=) |
| KR (1) | KR101256492B1 (https=) |
| CN (1) | CN102856191B (https=) |
| TW (1) | TWI469215B (https=) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014216331A (ja) * | 2013-04-22 | 2014-11-17 | 株式会社日立ハイテクノロジーズ | プラズマエッチング方法 |
| JP2015050433A (ja) * | 2013-09-04 | 2015-03-16 | 東京エレクトロン株式会社 | プラズマ処理方法 |
| JP6396699B2 (ja) * | 2014-02-24 | 2018-09-26 | 東京エレクトロン株式会社 | エッチング方法 |
| JP6295130B2 (ja) * | 2014-04-22 | 2018-03-14 | 株式会社日立ハイテクノロジーズ | ドライエッチング方法 |
| JP6424024B2 (ja) | 2014-06-24 | 2018-11-14 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びプラズマ処理方法 |
| US9779919B2 (en) | 2015-01-09 | 2017-10-03 | Hitachi High-Technologies Corporation | Plasma processing apparatus and plasma processing method |
| JP6567943B2 (ja) | 2015-01-09 | 2019-08-28 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
| US11417501B2 (en) | 2015-09-29 | 2022-08-16 | Hitachi High-Tech Corporation | Plasma processing apparatus and plasma processing method |
| JP6670692B2 (ja) | 2015-09-29 | 2020-03-25 | 株式会社日立ハイテク | プラズマ処理装置およびプラズマ処理方法 |
| US9767991B2 (en) * | 2015-11-04 | 2017-09-19 | Lam Research Corporation | Methods and systems for independent control of radical density, ion density, and ion energy in pulsed plasma semiconductor device fabrication |
| JP7228413B2 (ja) * | 2019-03-11 | 2023-02-24 | 東京エレクトロン株式会社 | プラズマ処理方法、及び、プラズマ処理装置 |
| KR102207608B1 (ko) | 2019-04-24 | 2021-01-26 | 윤종오 | 카르복실산으로 유기화된 규소 이온 복합체 및 복합체의 제조방법과 이를 이용한 제품 |
| JP7738486B2 (ja) * | 2019-06-04 | 2025-09-12 | メンブリオン・インコーポレイテッド | セラミック陽イオン交換材料 |
| CN110993499B (zh) | 2019-11-05 | 2022-08-16 | 北京北方华创微电子装备有限公司 | 一种刻蚀方法、空气隙型介电层及动态随机存取存储器 |
| WO2022074708A1 (ja) * | 2020-10-05 | 2022-04-14 | Ｓｐｐテクノロジーズ株式会社 | プラズマ処理用ガス、プラズマ処理方法及びプラズマ処理装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6759339B1 (en) * | 2002-12-13 | 2004-07-06 | Silicon Magnetic Systems | Method for plasma etching a microelectronic topography using a pulse bias power |
| CN101421830A (zh) * | 2006-02-17 | 2009-04-29 | 朗姆研究公司 | 无限选择性的光刻胶掩膜蚀刻 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60115232A (ja) | 1983-11-28 | 1985-06-21 | Hitachi Ltd | ドライエッチング用ガス |
| JPH06342769A (ja) * | 1992-08-21 | 1994-12-13 | Nissin Electric Co Ltd | エッチング方法及び装置 |
| JP3210469B2 (ja) | 1993-03-12 | 2001-09-17 | 株式会社日立製作所 | 半導体集積回路装置の製造方法 |
| US7695763B2 (en) | 2004-01-28 | 2010-04-13 | Tokyo Electron Limited | Method for cleaning process chamber of substrate processing apparatus, substrate processing apparatus, and method for processing substrate |
| KR100773734B1 (ko) * | 2006-12-29 | 2007-11-09 | 제일모직주식회사 | 난연성이 우수한 열가소성 폴리에스테르 수지 조성물 |
| US7547636B2 (en) * | 2007-02-05 | 2009-06-16 | Lam Research Corporation | Pulsed ultra-high aspect ratio dielectric etch |
-
2011
- 2011-06-30 JP JP2011145164A patent/JP5802454B2/ja active Active
- 2011-07-18 TW TW100125308A patent/TWI469215B/zh active
- 2011-07-29 KR KR1020110075832A patent/KR101256492B1/ko active Active
- 2011-08-16 US US13/210,490 patent/US8801951B2/en active Active
- 2011-08-19 CN CN201110239141.5A patent/CN102856191B/zh active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6759339B1 (en) * | 2002-12-13 | 2004-07-06 | Silicon Magnetic Systems | Method for plasma etching a microelectronic topography using a pulse bias power |
| CN101421830A (zh) * | 2006-02-17 | 2009-04-29 | 朗姆研究公司 | 无限选择性的光刻胶掩膜蚀刻 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2013012624A (ja) | 2013-01-17 |
| KR20130007384A (ko) | 2013-01-18 |
| US20130001197A1 (en) | 2013-01-03 |
| CN102856191B (zh) | 2015-04-08 |
| JP5802454B2 (ja) | 2015-10-28 |
| TW201301381A (zh) | 2013-01-01 |
| KR101256492B1 (ko) | 2013-04-19 |
| CN102856191A (zh) | 2013-01-02 |
| US8801951B2 (en) | 2014-08-12 |
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