TWI464542B - 微影投射曝光裝置的照射系統 - Google Patents
微影投射曝光裝置的照射系統 Download PDFInfo
- Publication number
- TWI464542B TWI464542B TW098132466A TW98132466A TWI464542B TW I464542 B TWI464542 B TW I464542B TW 098132466 A TW098132466 A TW 098132466A TW 98132466 A TW98132466 A TW 98132466A TW I464542 B TWI464542 B TW I464542B
- Authority
- TW
- Taiwan
- Prior art keywords
- mirror
- illumination system
- mirror elements
- light
- mirror element
- Prior art date
Links
- 238000005286 illumination Methods 0.000 title claims description 82
- 230000003287 optical effect Effects 0.000 claims description 39
- 230000005855 radiation Effects 0.000 claims description 31
- 238000000576 coating method Methods 0.000 claims description 30
- 238000009826 distribution Methods 0.000 claims description 29
- 239000011248 coating agent Substances 0.000 claims description 28
- 238000010438 heat treatment Methods 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 19
- 230000004888 barrier function Effects 0.000 claims description 15
- 230000008859 change Effects 0.000 claims description 13
- 238000001816 cooling Methods 0.000 claims description 13
- 238000005452 bending Methods 0.000 claims description 10
- 230000003044 adaptive effect Effects 0.000 claims description 5
- 239000000758 substrate Substances 0.000 description 17
- 230000000694 effects Effects 0.000 description 14
- 230000004075 alteration Effects 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 201000009310 astigmatism Diseases 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 238000002310 reflectometry Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000003491 array Methods 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 238000012937 correction Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 210000001747 pupil Anatomy 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000021615 conjugation Effects 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V33/00—Structural combinations of lighting devices with other articles, not otherwise provided for
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
- G03F7/70266—Adaptive optics, e.g. deformable optical elements for wavefront control, e.g. for aberration adjustment or correction
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
- G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
- G03F7/70891—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Public Health (AREA)
- Atmospheric Sciences (AREA)
- Epidemiology (AREA)
- Environmental & Geological Engineering (AREA)
- Optics & Photonics (AREA)
- Toxicology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Engineering & Computer Science (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Optical Elements Other Than Lenses (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP08017088A EP2169464A1 (en) | 2008-09-29 | 2008-09-29 | Illumination system of a microlithographic projection exposure apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201022854A TW201022854A (en) | 2010-06-16 |
| TWI464542B true TWI464542B (zh) | 2014-12-11 |
Family
ID=40673627
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098132466A TWI464542B (zh) | 2008-09-29 | 2009-09-25 | 微影投射曝光裝置的照射系統 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US8797507B2 (enExample) |
| EP (1) | EP2169464A1 (enExample) |
| JP (1) | JP5475785B2 (enExample) |
| KR (1) | KR101704069B1 (enExample) |
| TW (1) | TWI464542B (enExample) |
| WO (1) | WO2010034472A1 (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2169464A1 (en) * | 2008-09-29 | 2010-03-31 | Carl Zeiss SMT AG | Illumination system of a microlithographic projection exposure apparatus |
| DE102010025222A1 (de) * | 2010-06-23 | 2011-12-29 | Carl Zeiss Smt Gmbh | Steuerbare Spiegelanordnung, optisches System mit einer steuerbaren Spiegelanordnung und Verfahren zur Ansteuerung einer steuerbaren Spiegelanordnung |
| CN103038708B (zh) | 2010-07-30 | 2016-08-17 | 卡尔蔡司Smt有限责任公司 | Euv曝光设备 |
| WO2012034571A1 (en) * | 2010-09-14 | 2012-03-22 | Carl Zeiss Smt Gmbh | Illumination system of a microlithographic projection exposure apparatus |
| DE102010061950A1 (de) * | 2010-11-25 | 2012-05-31 | Carl Zeiss Smt Gmbh | Verfahren sowie Anordnung zum Bestimmen des Erwärmungszustandes eines Spiegels in einem optischen System |
| DE102011005778A1 (de) * | 2011-03-18 | 2012-09-20 | Carl Zeiss Smt Gmbh | Optisches Element |
| DE102011005840A1 (de) * | 2011-03-21 | 2012-09-27 | Carl Zeiss Smt Gmbh | Steuerbare Mehrfachspiegelanordnung, optisches System mit einer steuerbaren Mehrfachspiegelanordnung sowie Verfahren zum Betreiben einer steuerbaren Mehrfachspiegelanordnung |
| JP5807761B2 (ja) * | 2011-06-06 | 2015-11-10 | 株式会社ニコン | 照明方法、照明光学装置、及び露光装置 |
| DE102011104543A1 (de) * | 2011-06-18 | 2012-12-20 | Carl Zeiss Smt Gmbh | Beleuchtungssystem einer mikrolithographischen Projektionsbelichtungsanlage und Verfahren zur mikrolithographischen Projektion einer Maske |
| FR2996016B1 (fr) * | 2012-09-25 | 2014-09-19 | Sagem Defense Securite | Illuminateur de photolithographie telecentrique selon deux directions |
| KR102089310B1 (ko) * | 2013-01-25 | 2020-03-16 | 엘지디스플레이 주식회사 | 마스크리스 노광장치 |
| DE102013204316B4 (de) * | 2013-03-13 | 2015-07-23 | Carl Zeiss Smt Gmbh | Projektionsanordnung |
| US9854226B2 (en) * | 2014-12-22 | 2017-12-26 | Google Inc. | Illuminator for camera system having three dimensional time-of-flight capture with movable mirror element |
| WO2017050360A1 (en) * | 2015-09-23 | 2017-03-30 | Carl Zeiss Smt Gmbh | Method of operating a microlithographic projection apparatus and illuminations system of such an apparatus |
| NL2020548A (en) * | 2017-04-12 | 2018-10-17 | Asml Netherlands Bv | Mirror Array |
| DE102017221420A1 (de) | 2017-11-29 | 2018-11-29 | Carl Zeiss Smt Gmbh | Euv-beleuchtungssystem und verfahren zum erzeugen einer beleuchtungsstrahlung |
| DE102018123328B4 (de) * | 2018-09-21 | 2022-09-08 | Carl Zeiss Smt Gmbh | Baugruppe eines optischen Systems, insbesondere in einer mikrolithographischen Projektionsbelichtungsanlage, sowie Verfahren zum Betreiben eines solchen optischen Systems |
| KR102678312B1 (ko) * | 2018-10-18 | 2024-06-25 | 삼성전자주식회사 | Euv 노광 장치와 노광 방법, 및 그 노광 방법을 포함한 반도체 소자 제조 방법 |
| KR20230086505A (ko) | 2021-12-08 | 2023-06-15 | 삼성전자주식회사 | 공간 광 변조기 및 이를 포함하는 전자 장치 |
| DE102021214366A1 (de) * | 2021-12-15 | 2023-06-15 | Carl Zeiss Smt Gmbh | Vorrichtung und Verfahren zur Vermeidung einer Degradation einer optischen Nutzoberfläche eines Spiegelmoduls, Projektionssystem, Beleuchtungssystem sowie Projektionsbelichtungsanlage |
| EP4261580A1 (en) * | 2022-04-14 | 2023-10-18 | Airbus Defence and Space GmbH | Apparatus and method for altering an optical surface of a mirror |
| DE102023208980A1 (de) * | 2023-09-15 | 2024-08-01 | Carl Zeiss Smt Gmbh | MEMS-Mikrospiegeleinheit und Facettenspiegel |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004034447A1 (ja) * | 2002-10-10 | 2004-04-22 | Nikon Corporation | 極短紫外線光学系用反射ミラー、極短紫外線光学系、極短紫外線光学系の使用方法、極短紫外線光学系の製造方法、極短紫外線露光装置、及び極短紫外線露光装置の使用方法 |
| US20050018269A1 (en) * | 2001-08-16 | 2005-01-27 | Carl Zeiss Smt Ag | Optical system |
| TW200622506A (en) * | 2004-09-14 | 2006-07-01 | Asml Netherlands Bv | Lithogrpahic apparatus and device manufacturing method |
| JP2007150295A (ja) * | 2005-11-10 | 2007-06-14 | Carl Zeiss Smt Ag | ラスタ要素を有する光学装置、及びこの光学装置を有する照射システム |
| JP2008130895A (ja) * | 2006-11-22 | 2008-06-05 | Nikon Corp | 露光装置、デバイス製造方法、及び露光方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CA2077572C (en) | 1991-09-07 | 1998-08-18 | Masahito Niibe | Method of and apparatus for stabilizing shapes of objects, such as optical elements, as well as exposure apparatus using same and method of manufacturing semiconductr devices |
| JP4320999B2 (ja) * | 2002-02-04 | 2009-08-26 | 株式会社ニコン | Ｘ線発生装置及び露光装置 |
| JP4324957B2 (ja) | 2002-05-27 | 2009-09-02 | 株式会社ニコン | 照明光学装置、露光装置および露光方法 |
| US6996343B2 (en) * | 2003-03-21 | 2006-02-07 | Lucent Technologies Inc. | Dispersion compensator |
| DE10317662A1 (de) | 2003-04-17 | 2004-11-18 | Carl Zeiss Smt Ag | Projektionsobjektiv, mikrolithographische Projektionsbelichtungsanlage und Verfahren zur Herstellung einer Halbleiterschaltung |
| DE10327733C5 (de) | 2003-06-18 | 2012-04-19 | Limo Patentverwaltung Gmbh & Co. Kg | Vorrichtung zur Formung eines Lichtstrahls |
| TWI220097B (en) * | 2003-07-21 | 2004-08-01 | Avision Inc | Image calibration method |
| KR101159867B1 (ko) | 2003-09-12 | 2012-06-26 | 칼 짜이스 에스엠티 게엠베하 | 마이크로리소그래피 투사 노출 장치용 조명 시스템 |
| US7485485B2 (en) | 2004-02-09 | 2009-02-03 | Microvision, Inc. | Method and apparatus for making a MEMS scanner |
| ATE511668T1 (de) | 2004-02-17 | 2011-06-15 | Zeiss Carl Smt Gmbh | Beleuchtungssystem für eine mikrolithographische projektionsbelichtungsvorrichtung |
| WO2005083512A2 (de) | 2004-02-26 | 2005-09-09 | Carl Zeiss Smt Ag | Beleuchtungssystem für eine mikrolithographie-projektionsbelichtungsanlage |
| US20100014063A1 (en) * | 2005-05-31 | 2010-01-21 | Fujifilm Corporation | Image exposure apparatus |
| JP4778834B2 (ja) * | 2006-05-24 | 2011-09-21 | 富士フイルム株式会社 | 画像記録方法及び装置 |
| US8052289B2 (en) * | 2006-06-07 | 2011-11-08 | Asml Netherlands B.V. | Mirror array for lithography |
| EP1890191A1 (en) * | 2006-08-14 | 2008-02-20 | Carl Zeiss SMT AG | Catadioptric projection objective with pupil mirror |
| DE102006039895A1 (de) | 2006-08-25 | 2008-03-13 | Carl Zeiss Smt Ag | Verfahren zur Korrektur von durch Intensitätsverteilungen in optischen Systemen erzeugten Abbildungsveränderungen sowie entsprechendes optisches System |
| US7804603B2 (en) | 2006-10-03 | 2010-09-28 | Asml Netherlands B.V. | Measurement apparatus and method |
| DE102008002377A1 (de) * | 2007-07-17 | 2009-01-22 | Carl Zeiss Smt Ag | Beleuchtungssystem sowie Projektionsbelichtungsanlage für die Mikrolithografie mit einem derartigen Beleuchtungssystem |
| KR101527242B1 (ko) * | 2007-08-24 | 2015-06-08 | 칼 짜이스 에스엠테 게엠베하 | 광학 소자 내의 온도 분포에 영향을 주기 위한 방법, 광학 보정 장치 및 이러한 광학 보정 장치를 갖는 투영 노광 장치 |
| CN102203674B (zh) | 2008-09-22 | 2015-08-12 | Asml荷兰有限公司 | 光刻设备、可编程图案形成装置和光刻方法 |
| EP2169464A1 (en) | 2008-09-29 | 2010-03-31 | Carl Zeiss SMT AG | Illumination system of a microlithographic projection exposure apparatus |
-
2008
- 2008-09-29 EP EP08017088A patent/EP2169464A1/en not_active Withdrawn
-
2009
- 2009-09-23 WO PCT/EP2009/006856 patent/WO2010034472A1/en not_active Ceased
- 2009-09-23 JP JP2011528238A patent/JP5475785B2/ja active Active
- 2009-09-23 KR KR1020117009693A patent/KR101704069B1/ko active Active
- 2009-09-25 TW TW098132466A patent/TWI464542B/zh active
-
2011
- 2011-03-09 US US13/044,160 patent/US8797507B2/en active Active
-
2014
- 2014-06-25 US US14/314,725 patent/US9523922B2/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050018269A1 (en) * | 2001-08-16 | 2005-01-27 | Carl Zeiss Smt Ag | Optical system |
| WO2004034447A1 (ja) * | 2002-10-10 | 2004-04-22 | Nikon Corporation | 極短紫外線光学系用反射ミラー、極短紫外線光学系、極短紫外線光学系の使用方法、極短紫外線光学系の製造方法、極短紫外線露光装置、及び極短紫外線露光装置の使用方法 |
| TW200622506A (en) * | 2004-09-14 | 2006-07-01 | Asml Netherlands Bv | Lithogrpahic apparatus and device manufacturing method |
| JP2007150295A (ja) * | 2005-11-10 | 2007-06-14 | Carl Zeiss Smt Ag | ラスタ要素を有する光学装置、及びこの光学装置を有する照射システム |
| JP2008130895A (ja) * | 2006-11-22 | 2008-06-05 | Nikon Corp | 露光装置、デバイス製造方法、及び露光方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20110181850A1 (en) | 2011-07-28 |
| EP2169464A1 (en) | 2010-03-31 |
| KR20110059800A (ko) | 2011-06-03 |
| WO2010034472A1 (en) | 2010-04-01 |
| US8797507B2 (en) | 2014-08-05 |
| JP2012504324A (ja) | 2012-02-16 |
| JP5475785B2 (ja) | 2014-04-16 |
| US20140307239A1 (en) | 2014-10-16 |
| TW201022854A (en) | 2010-06-16 |
| US9523922B2 (en) | 2016-12-20 |
| KR101704069B1 (ko) | 2017-02-07 |
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